• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.10
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• pp.1049-1054
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• 2012

Continued advancements in organic materials have led to the development of organic devices that are thin, flexible, and lightweight and that can potentially be used as low-cost energy-conversion devices. While these devices have many advantages, the environmentally induced degradation of the active materials and the low-work-function electrodes remain a valid concern. Hence, many vacuum deposition processes have been applied to develop low-permeation barrier coatings. In this work, we present the results pertaining to the developed thin-film encapsulation. Multilayer encapsulation involves the use of $SiO_x$ or $SiN_x$ with parylene. The effective water vapor transmission rates were investigated using a Ca-corrosion test. The integration of the developed barrier layers was demonstrated by encapsulating pentacene/$C_{60}$ solar cells, and the results are presented.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1096_1097
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• 2009

Aluminium doped zinc oxide(ZnO:Al) thin film, which is mainly used as a transparent conducting electrode in electronic devices, has many advantages compared with conventional indium tin oxide(ITO). In this paper in order to investigate the possible application of ZnO:Al thin films as a transparent conducting electrode for flexible film-typed dye sensitized solar cell (FT-DSCs), ZnO:Al and ITO thin films were prepared on the polyethylene terephthalate (PET) substrate by r. f. magnetron sputtering method. Specially one-inched FT-DSCs using either a ZnO:Al or ITO electrode were also fabricated separately under the same manufacturing conditions. Some properties of both the FT-DSCs with ZnO:Al and ITO transparent electrodes, such as conversion efficiency, fill factor, and photocurrent were measured and compared with each other. The results showed that by doping the ZnO target with 2 wt% of $Al_2O_3$, the film deposited at discharge power of 200W resulted in the minimum resistivity of $2.2\times10^{-3}\Omega/cm$ and at ransmittance of 91.7%, which are comparable with those of commercially available ITO. Two types of FT-DSCs showed nearly the same tendency of I-V characteristics and the same value of conversion efficiencies. Efficiency of FT-DSCs using ZnO:Al electrode was around 2.6% and that of fabricated FT-DSCs using ITO was 2.5%. This means that ZnO:Al thin film can be used in FT-DSCs as a transparent conducting layer.

• Journal of Sensor Science and Technology
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• v.28 no.6
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• pp.366-370
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• 2019

In this study, we have successfully fabricated a highly conductive transparent electrode using Ag nanowires, based on piezoelectric polyvinylidene difluoride (PVDF) film, that can be applied as transparent and flexible speakers. The structural morphology of the Ag nanowires was confirmed by a detailed scanning electron microscopy. Ultraviolet-visible spectroscopy demonstrated that the transparent electrode fabricated by the Ag nanowires exhibited a transmittance of above 70%. The transparent electrode also showed very low sheet resistance with high flexibility. We have further developed an anti-oxidation coating layer by using a tetraethyl orthosilicate-poly trimethyloxyphenylsilane (TEOS-PTMS) slurry technique. It was confirmed that the transmittance and sheet resistance of the antioxidant film depends critically on the humidity of the film surface. We believe such Ag nanowire electrodes are a very promising next-generation transparent electrode technology that can be used in future flexible and transparent devices.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.17-22
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• 2013

We investigated the optimum bonding conditions for thermo-compression bonding of electrodes between flexible printed circuit board(FPCB) and rigid printed circuit board(RPCB) with Sn-58Bi solder as interlayer. In order to figure out the optimum bonding conditions, peel test of FPCB/RPCB joint was conducted. The peel strength was affected by the bonding conditions, such as temperature and time. The fracture energies were calculated through F-x (Force-displacement) curve during peel test and the relationships between bonding conditions and fracture behaviors were investigated. The optimum condition for the thermo-compression bonding with Sn-58Bi solder was found to be temperature of $195^{\circ}C$ and time of 7 s.

• Proceedings of the KWS Conference
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• 2010.05a
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• pp.81-81
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• 2010

전자 패키징은 미세화, 경량화, 저가화를 지향하고 신뢰성의 향상을 위해 발전해 왔다. 이러한 경향은 전자부품 자체의 성능 향상 뿐 아니라 전자부품을 장착, 고정할 수 있게 하는 인쇄회로 기판(PCB : Printed Circuit Board)의 성능에 많은 관심을 가지게 되었다. 전기적 신호의 손실을 줄이기 위해 전기, 전자 산업체에서는 가볍고 굴곡성이 우수한 연성인쇄회로기판(FPCB : Flexible PCB)과 가격이 싸고 신뢰성이 입증된 경성인쇄회로기판(RPCB : Rigid PCB)이 그 대상이다. 본 논문에서는 이 PCB중에서도 RPCB와 FPCB간의 열압착 방식으로 접합 시 전극간의 접합 양상을 보았다. 이 열압착 방식은 기존에 PCB를 접합하는데 사용하고 있는 connector를 이용한 체결법을 대체하는 기술로써 솔더를 중간층(interlayer)로 이용하여 열과 압력으로 접합하는 방식이다. 이 방식을 connector를 사용하는 방식에 비해 그 부피가 작고 I/O개수에 크게 영향 받지 않으며 자동화 공정이 쉬운 장점을 가지고 있다. 접합의 대상 중 RPCB의 경우는 무전해 니켈 금도금(ENIG : Electroless Nickle Immersion Gold)로 제작하였으며 FPCB의 경우는 ENIG와 유기보호피막(OSP : Organic solderability preservation) 처리하였다. 실험에 사용한 PCB는 $300\;{\mu}m$ pitch의 미세피치이며 솔더의 조성은 Sn-3.0Ag-0.5Cu (in wt%)과 Sn-3.0Ag (in wt%)를 사용하였다. 접합 온도와 접합 시간 그리고 접합 압력에 따라 최적의 접합 조건을 도출하였다. 접합 강도는 $90^{\circ}$ Peel Test를 통해서 측정하였으며 접합면 및 파괴면은 SEM과 EDS를 통하여 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.167-167
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• 2010

Indium tin oxide (ITO) has been widely used as transparent conductive oxides (TCOs) for transparent electrodes of various optoelectronic devices, such as liquid crystal displays (LCD) and organic light emitting diodes (OLED). However, indium has become increasingly expensive and rare because of its limited resources. In addition, ITO thin films have some problems for OLED and flexible displays, such as imperfect work function, chemical instability, and high deposition temperature. Therefore, multi-component TCO materials have been reported as anode materials. Among the various materials, IZTO thin films have been gained much attention as anode materials due to their high work function, good conductivity, high transparency and low deposition temperature. IZTO thin films with a thickness of 200nm were deposited on Corning glass substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt%, ZnO 15 wt%, SnO2 15 wt%). We investigated the electrical, optical, structural properties of IZTO thin films. As the substrate temperature is increased, the electrical properties of IZTO are improved. All IZTO thin films have good optical properties, which showed an average of transmittance over 80%. These IZTO thin films were used to fabricate organic light emitting diodes (OLEDs) as anode and the device performances studied. As a result, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• Applied Chemistry for Engineering
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• v.30 no.1
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• pp.23-28
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• 2019

We report a supercapacitor cable, which consists of three-dimensional (3D) porous graphene coated onto the surface of carbon thread. The 3D porous framework of graphene was constructed by microwave-activated process using a graphene oxide-coated carbon thread. The use of microwave irradiation enabled to convert graphene oxide into reduced graphene oxide without any reducing agents and activate graphene sheets into exfoliated and porous graphene sheets. Combining two wire electrodes with a polymer gel electrolyte successfully completed supercapacitor device in a form of cable construction. The supercapacitor cables were highly flexible, and thus can be transformed into various shapes of devices and be integrated into textile items. A high area-capacitance of 38.1 mF/cm was obtained at a scan rate of 10 mV/s. This capacitance was retained 88% of its original value at 500 mV/s. The cycle life was also demonstrated by repeating a charge/discharge process during 10,000 cycles even under bent states, showing a high capacitance retention of 96.5%.

• Membrane Journal
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• v.33 no.4
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• pp.211-221
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• 2023

This study presents a comprehensive study on the synthesis and characterization of PVI-PGMA/LiTFSI polymeric membrane electrolytes and CxNy-C flexible electrodes for energy storage applications. The dual-functional PVI-PGMA copolymer exhibited excellent ionic conductivity, with the PVI-PGMA73/LiTFSI200 membrane electrolyte achieving the highest conductivity of 1.0 × 10^-3 S cm^-1. The electrochemical performance of the CxNy-C electrodes was systematically investigated, with C3N2-C demonstrating superior performance, achieving the highest specific capacitance of 958 F g^-1 and lowest charge transfer resistance (R_ct) due to its highly interconnected hybrid structure comprising nanowires and polyhedrons, along with binary Co/Ni oxides, which provided abundant redox-active sites and facilitated ion diffusion. The presence of a graphitic carbon shell further contributed to the enhanced electrochemical stability during charge-discharge cycles. These results highlight the potential of PVI-PGMA/LiTFSI polymeric membrane electrolytes and CxNy-C electrodes for advanced energy storage devices, such as supercapacitors and lithium-ion batteries, paving the way for further advancements in sustainable and high-performance energy storage technologies.

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.150-154
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• 2016

Contact electrodes pose threats like inflammation, metal poisoning, and allergic reaction to the user during long term ECG procedure. Therefore, we present a novel noncontact electrocardiographic electrode designed through microelectromechanical systems (MEMS) process. The proposed ECG electrode consists of small inner and large outer circular copper plates separated by thin insulator. The inner plate enables capacitive transduction of bio-potential variations on a subject’s chest into a voltage that can be processed by a signal processing board, whereas the outer plate shields the inner plate from environmental electromagnetic noise. The electrode lead wires are also coaxially designed to prevent cables from coupling to ground or electronic devices. A prototype ECG electrode has an area of about 2.324 cm², is very flexible and does not require power to operate. The prototype ECG electrode could measure ECG at about 500 um distance from the subject’s chest.