• 한국정밀공학회지
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• 제22권3호
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• pp.7-14
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• 2005

본 논고에서는 microfocus X 선 발생장치와 평판형 영상센서를 이용한 micro-CT 시스템의 개발과 그 응용에 대해 소개하였다. 개발과 관련하여서는 영상센서 및 시스템의 동작원리뿐만 아니라 성능평가 결과에 대해서도 간단히 언급하였는데, 이와 같은 성능평가는 추후 개선된 혹은 새로운 설계 및 제작을 위해서는 필수적으로 수반되어야 할 부분이다. 개발된 micro-CT 시스템의 응용분야 소개와 관련하여서는 몇 가지 획득 영상을 토대로 바이오 영상과 산업용 영상에 관하여 언급하였다. 바이오 영상분야에서는 현재 세계적으로 유수 의료기기업체에서 이미 제작하여 판매하고 있으며, 대부분 X선 영상증배관 혹은 CCD(charge-coupled device)를 X 선 영상획득 센서로 사용한 반면, 본 논고에서 소개한 시스템은 평판형 영상센서를 사용했다는 점에서 차별성이 있다. Micro-CT 시스템의 산업용 영상분야로의 적용은 이제 시작 단계이며, 기존 라미노그라피 시스템을 대체하거나 혹은 새로운 응용으로 자리매김할 것으로 기대된다.

• Transactions on Electrical and Electronic Materials
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• 제3권2호
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• pp.28-31
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• 2002

The Cdl-xZnxTe film was fabricated by thermal evaporation for the flat-panel X-ray detector. The stoichimetric ratio and the crystal structure of a polycrystalline Cd$_{1-x}$ Zn$_{x}$Te were investigated by EPMA and XRD, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in the polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd$_{0.7}$Zn$_{0.3}$Te thin film were measured to 0.37 nA/cm$^2$ and 260 pc/cm$^2$ at an applied voltage of 2.5 V/${\mu}{\textrm}{m}$, respectively. Experimental results showed that the increase of Zn doping rates in Cd$_{1-x}$ Zn$_{x}$Te detectors reduced the leakage current and improved the signal to noise ratio significantly.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 E
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• pp.1746-1748
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• 1997

The surface discharge type ac plasma display panel(ac PDP) is a flat display devices using gas discharge. In ac PDP, parallel electrodes covered with dielectric layer are on a substrates. The discharge current characteristics are affected by cell structure. In this study, the relationship between the principal design factor and discharge characteristics is discussed, based on experiment, and the current waveform is measured by voltage detector and storage O.S.C. as a parameter of design factor, e.g., electrode gap and width.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.395-398
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• 2002

Many research group started study to develope x-ray detector using thin film transistor from 1970. But realization of TFT based x-ray detector development was caused by progress of thin film transistor liquid crystal display(TFTLCD) device technology in 1990. The main current of TFT technology is display device. Research results expend TFT technology field from display device to sensor manufacture technology. These days many research group in the world realize various digital x-ray detector. In this study, We compare discharge erasing method to visible light erasing method in a-Se based digital x-ray detector. Visible light erasing method is known reset process in direct conversion x-ray detector. Digital x-ray detector using visible light erasing method is not adaptive for conventional x-ray device, because of its thickness. And it is not avaliable for real-time imaging for digital fluoroscopy, because of its long reset time. In this study we overcome these limitations and show new idea for real-time imaging method.

• 대한의용생체공학회:의공학회지
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• 제29권5호
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• pp.392-399
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• 2008

Thin-film transistor (TFT) arrays for an x-ray detector require quite different design concept from that of the conventional active-matrix liquid crystal devices (AM-LCDs). In this paper anew design of TFT array which uses only SiNx for passivation layer is described to meet the detector performance and the product availability simultaneously. For the purpose of optimizing the design parameters of the TFT array, a Spice simulation was performed. As a result, some parameters, such as the TFT width, the data line capacitance, and the storage capacitance, were able to be fixed. The other parameters were decided within a permissible range of the TFT process especially the photolithography process and the wet etch process. Then we adapted the TFT array which had been produced by the proposed design to our prototype model (FDXD-1417 and evaluated it clinically by comparing with a commercial model (EPEX, Hologic, Beford, USA). The results say that our prototype model is slightly better than EPEX system in chest PA images. So we can prove the technical usefulness and the commercial values of the proposed TFT design.

• 대한안전경영과학회지
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• 제17권4호
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• pp.213-221
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• 2015

The aim of this study was to set up the optimal exposure condition according to detector type considering image quality (IQ) with radiation dose in chest digital radiography. We used three detector type such as flat-panel detector (FP) and computed radiography (CR), and charge-coupled device (CCD). Entrance surface dose (ESD) was measured at each exposure condition combined tube voltage with tube current using dosimeter, after attaching on human phantom, it was repeated 3 times. Phantom images were evaluated independently by three chest radiologists after blinding image informations. Standard exposure condition using each institution was 117 kVp-AEC at FP and 117 kVp-8 mAs at CR, and 117 kVp-8 mAs at CCD. Statistical analysis was performed by One way ANOVA (Dunnett T3 test) using SPSS ver. 19.0. In FP, IQ scores were not significant difference between 102 kVp-4 mAs and 117 kVp-AEC (28.4 vs. 31.1, p=1.000), even though ESD was decreased up to 50% ($62.3{\mu}Gy$ vs. $125.1{\mu}Gy$). In CR, ESD was greatly decreased from 117 kVp-8 mAs to 90 kVp-8 mAs without significant difference of IQ score (p=1.000, 24.6 vs. 19.5). In CCD, IQ score of 117 kVp-8 mAs was similar with 109 kVp-8 mAs (29.6 vs. 29.0), with decreasing from $320.8{\mu}Gy$ to $284.7{\mu}Gy$ (about 11%). We conclude that optimal x-ray exposure condition for chest digital radiography is 102 kVp-4 mAs in FP and 90 kVp-8 mAs in CR, and 109 kVp-8 mAs in CCD.

• 전자공학회논문지SC
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• 제40권3호
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• pp.163-171
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• 2003

디지털 방사선 검출기의 성능을 측정하기 위해 변조전달할수(Modulation Transfer Function)을 측정하여 기존 방사선 영상 시스템인 필름/스크린과 비교하였다. 제작된 디지털 방사선 검출기는 TFT 패널위에 진공 증착법을 통해 비정질 셀레늄이 코팅되었다. 비교 측정물이 감도 400의 필름/스크린은 아날로그 방식의 방사선 검출기로서 현재 임상에서 이용되고 있는 필름이다. Square wave & slit 측정법을 통해 두 시스템의 변조전달함수를 측정하였다. 필름/스핀린의 반치폭(FWHM)은 357㎛(1.4 lp/mm at 50% spatial frequency)으로 측정되었으며, 디지털 방사선 검출 시스템은 200㎛(2.5 lp/mm at 50%)였다. 영상의 표현성능 평가의 결과 디지털 방사선 시스템은 필름 시스템보다 높은 것으로 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.254-255
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• 2005

In this paper, we investigated electrical characteristics of the X-ray detector of mercuric iodide (HgI2) film fabricated by PIB(Particle-in-Binder) Method on ITO substrates 17cm$\times$20cm in size with thicknesses ranging from approximately 200${\mu}m$ to 240${\mu}m$. In the present study, using I-V measurements, their electrical properties such as leakage current, X-ray sensitivity, and signal-to-noise ratio (SNR),were investigated. The results of our study can be useful in the future design and optimization of direct active-matrix flat-panel detectors (AMFPD) for various digital X-ray imaging modalities.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.379-382
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• 2002

Lately, intensifying screen of the $CaWO_4$ is used to medical treatment and diagnosis of the image. In this paper, we investigated transmission fraction and mass attenuation coefficient of $CaWO_4$ screen about diagnostic x-ray of low energy using MCNP 4C code. Experimentally, for 0.9 mm-$CaWO_4$ screen, the absorbable rate of diagnostic x-ray is more than 95%. according to kVp, the experimental value of mass attenuation coefficient is in a1most agreement with an corrected estimate value of MCNP and the deviation of experimental values is less than ${\pm}7%$. Using the MCNP code through this paper, we can make an estimate of signal and design for construction of the CaWO4/a-Se based digital x-ray image detector and make a good use of the foundation data for development of other materials.

• Transactions on Electrical and Electronic Materials
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• 제4권5호
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• pp.15-18
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• 2003

The Cd$\_$1-x/Zn$\_$x/Te film was produced by thermal evaporation for the flat-panel X-ray detector. The crystal structure and the surface morphology of poly crystalline Cd$\_$1-x/Zn$\_$x/Te film were examined using XRD and SEM, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in a polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd$\_$0.7/Zn$\_$0.3/Te thin film were measured to 0.3 1nA/$\textrm{cm}^2$ and 260 pC/$\textrm{cm}^2$ at an applied voltage of 2.5 V/$\mu\textrm{m}$, respectively. Experimental results showed that the increase of Zn doping rates in Cd$\_$1-x/Zn$\_$x/Te detectors reduced the leakage current and improved the X-ray sensitivity significantly. The leakage current was drastically diminished by the formation of thin parylene layer in the Cd$\_$0.7/Zn$\_$0.3/Te detector.