• Title/Summary/Keyword: Flash read-path architecture

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Low-Power IoT Microcontroller Code Memory Interface using Binary Code Inversion Technique Based on Hot-Spot Access Region Detection (핫스팟 접근영역 인식에 기반한 바이너리 코드 역전 기법을 사용한 저전력 IoT MCU 코드 메모리 인터페이스 구조 연구)

  • Park, Daejin
    • IEMEK Journal of Embedded Systems and Applications
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    • v.11 no.2
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    • pp.97-105
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    • 2016
  • Microcontrollers (MCUs) for endpoint smart sensor devices of internet-of-thing (IoT) are being implemented as system-on-chip (SoC) with on-chip instruction flash memory, in which user firmware is embedded. MCUs directly fetch binary code-based instructions through bit-line sense amplifier (S/A) integrated with on-chip flash memory. The S/A compares bit cell current with reference current to identify which data are programmed. The S/A in reading '0' (erased) cell data consumes a large sink current, which is greater than off-current for '1' (programmed) cell data. The main motivation of our approach is to reduce the number of accesses of erased cells by binary code level transformation. This paper proposes a built-in write/read path architecture using binary code inversion method based on hot-spot region detection of instruction code access to reduce sensing current in S/A. From the profiling result of instruction access patterns, hot-spot region of an original compiled binary code is conditionally inverted with the proposed bit-inversion techniques. The de-inversion hardware only consumes small logic current instead of analog sink current in S/A and it is integrated with the conventional S/A to restore original binary instructions. The proposed techniques are applied to the fully-custom designed MCU with ARM Cortex-M0$^{TM}$ using 0.18um Magnachip Flash-embedded CMOS process and the benefits in terms of power consumption reduction are evaluated for Dhrystone$^{TM}$ benchmark. The profiling environment of instruction code executions is implemented by extending commercial ARM KEIL$^{TM}$ MDK (MCU Development Kit) with our custom-designed access analyzer.

A Design of 256GB volume DRAM-based SSD(Solid State Drive) (256GB 용량 DRAM기반 SSD의 설계)

  • Ko, Dea-Sik;Jeong, Seung-Kook
    • Journal of Advanced Navigation Technology
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    • v.13 no.4
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    • pp.509-514
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    • 2009
  • In this paper, we designed and analyzed 256GB DRAM-based SSD storage using DDR1 memory and PCI-e interface. SSD is a storage system that uses DRAM or NAND Flash as primary storage media. Since the SSD read and write data directly to memory chips, which results in storage speeds far greater than conventional magnetic storage devices, HDD. Architecture of the proposed SSD system has performance of high speed data processing duo to use multiple RAM disks as primary storage and PCI-e interface bus as communication path of RAM disks. We constructed experimental system with UNIX, Windows/Linux server, SAN Switch, and Ethernet Switch and measured IOPS and bandwidth of proposed SSD using IOmeter. In experimental results, it has been shown that IOPS, 470,000 and bandwidth,800MB/sec of the DDR-1 SSD is better than those of the HDD and Flash-based SSD.

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