• Journal of the Semiconductor & Display Technology
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• v.19 no.3
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• pp.112-117
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• 2020

NAND flash memory is a non-volatile memory that retains stored data even without power supply. Internal memory used as a data storage device and solid-state drive (SSD) is used in portable devices such as smartphones and digital cameras. However, NAND flash memory carries the risk of electric shock, which can cause errors during read/write operations, so use error correction codes to ensure reliability. It efficiently recovers bad block information, which is a defect in NAND flash memory. BBT (Bad Block Table) is configured to manage data to increase stability, and as a result of experimenting with the error correction code algorithm, the bit error rate per page unit of 4Mbytes memory was on average 0ppm, and 100ppm without error correction code. Through the error correction code algorithm, data stability and reliability can be improved.

• Journal of KIISE:Computing Practices and Letters
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• v.16 no.7
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• pp.789-793
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• 2010

Recently, flash memory-based non-volatile cache (NVC) is emerging as an effective solution to enhance both I/O performance and energy consumption of storage systems. To get significant performance and energy gains by NVC, it would be better to use multi-level-cell (MLC) flash memories since it can provide a large capacity of NVC with low cost. However, the number of available program/erase cycles of MLC flash memory is smaller than that of single-level-cell (SLC) flash memory limiting the lifespan of NVC. To overcome such a limitation, SLC/MLC combined flash memory is a promising solution for NVC. In this paper, we propose an effective management scheme for heterogeneous SLC and MLC regions of the combined flash memory.

• Proceedings of the IEEK Conference
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• 2003.11b
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• pp.15-18
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• 2003

Flash memory becomes more important for its fast access speed, low-power, shock resistance and nonvolatile storage. But its native restrictions that have limited 1ifetime, inability of update in place, different size unit of read/write and erase operations need to managed by FTL(Flash Translation Layer). FTL has to control the wear-leveling, address mapping, bad block management of flash memory. In this paper, we focuses on the fast access to address mapping table and proposed the way of faster valid page search in the flash memory using the VPLT(Valid Page Lookup Table). This method is expected to decrease the frequency of access of flash memory that have an significant effect on performance of read and block-transfer operations. For the validations, we implemented the FTL based on Windows CE platform and obtained an improved result.

• Journal of Information Technology Applications and Management
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• v.13 no.2
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• pp.115-126
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• 2006

Recently, flash memories are one of best media to support portable computer's storages in mobile computing environment. We propose a new transaction recovery scheme for a flash memory database environment which is based on a flash media file system. We improved traditional shadow paging schemes by reusing old data pages which are supposed to be invalidated in the course of writing a new data page in the flash file system environment. In order to reuse these data pages, we exploit deferred cleaning list structure in our flash memory shadow paging (FMSP) scheme. FMSP scheme removes the additional storage overhead for keeping shadow pages and minimizes the I/O performance degradation caused by data page distribution phenomena of traditional shadow paging schemes. We also propose a simulation model to show the performance of FMSP. Based on the results of the performance evaluation, we conclude that FMSP outperforms the traditional scheme.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.4
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• pp.15-20
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• 2016

Write amplification is a critical factor that limits the stable performance of flash-based storage systems. To reduce write amplification, this paper presents a new technique that cooperatively manages data in flash storage and nonvolatile memory (NVM). Our scheme basically considers NVM as the cache of flash storage, but allows the original data in flash storage to be invalidated if there is a cached copy in NVM, which can temporarily serve as the original data. This scheme eliminates the copy-out operation for a substantial number of cached data, thereby enhancing garbage collection efficiency. Experimental results show that the proposed scheme reduces the copy-out overhead of garbage collection by 51.4% and decreases the standard deviation of response time by 35.4% on average.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.291-302
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• 2013

NAND flash memory (NFM) based storage devices, e.g. Solid State Drive (SSD), are rapidly replacing conventional storage devices, e.g. Hard Disk Drive (HDD). As NAND flash memory technology advances, its specification has evolved to support denser cells and larger pages and blocks. However, efforts to fully understand their impacts on design objectives such as performance, power, and cost for various applications are often neglected. Our research shows this recent trend can adversely affect the design objectives depending on the characteristics of applications. Past works mostly focused on improving the specific design objectives of NFM based systems via various architectural solutions when the specification of NFM is given. Several other works attempted to model and characterize NFM but did not access the system-level impacts of individual parameters. To the best of our knowledge, this paper is the first work that considers the specification of NFM as the design parameters of NAND flash storage devices (NFSDs) and analyzes the characteristics of various synthesized and real traces and their interaction with design parameters. Our research shows that optimizing design parameters depends heavily on the characteristics of applications. The main contribution of this research is to understand the effects of low-level specifications of NFM, e.g. cell type, page size, and block size, on system-level metrics such as performance, cost, and power consumption in various applications with different characteristics, e.g. request length, update ratios, read-and-modify ratios. Experimental results show that the optimized page and block size can achieve up to 15 times better performance than the conventional NFM configuration in various applications. The results can be used to optimize the system-level objectives of a system with specific applications, e.g. embedded systems with NFM chips, or predict the future direction of NFM.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.1
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• pp.103-108
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• 2014

The flash memory which is exploited on hand-held devices such as smart phones is a non-volatile storage and has the benefit that it can store mass data at a small sized chip. To process queries on the mass data stored in the flash memory, the index scheme should be exploited. However, since the write operation of the flash memory is slower than the read operation and the overwrite is not supported, it is required to reevaluate the performance of the index and find out the drawbacks. In this paper, we evaluate the performance of a space division typed index scheme on the flash memory. To do this, we implement the fixed grid file and measure the average speeds of the query and update processing on a various condition and compare the value of the flash memory with that of the magnetic disk.

• The KIPS Transactions:PartA
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• v.15A no.6
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• pp.325-334
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• 2008

Flash memory is widely used as a storage medium for mobile devices such as cell phones, MP3 players, PDA's due to its tiny size, low power consumption and shock resistant characteristics. Additionally, some computer manufacturers try to replace hard-disk drives used in Laptops or personal computers with flash memory. More recently, there are some literatures on developing a flash memory-aware $B^+$-tree index for an efficient key-based search in the flash memory storage system. They focus on minimizing the number of "overwrites" resulting from inserting or deleting a sequence of key values to/from the $B^+$-tree. However, in addition to this factor, the size of a physical page allocated to a node can affect the maintenance cost of the $B^+$-tree. In this paper, with diverse experiments, we compare and analyze the costs of construction and search of the $B^+$-tree and the space requirement on flash memory as the node size increases. We also provide sorting-based or non-sorting-based algorithms to be used when inserting a key value into the node and suggest an header structure of the index node for searching a given key inside it efficiently.

• Proceedings of the IEEK Conference
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• 2009.05a
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• pp.240-242
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• 2009

Flash memories are one of best media to support future computer's storages. However, we need to improve traditional data management scheme due to the relatively slow characteristics of flash operation of SSD. Due to the unique characteristics of flash media and hard disk, the efficiency of I/O processing is severely reduced without special treatment, especially in the presence of heavy workload or bulk data copy. In this respect, we need to design and develop efficient hybrid-RAID storage system.

• Journal of KIISE:Computing Practices and Letters
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• v.13 no.5
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• pp.333-337
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• 2007

Flash Translation Layer(FTL) which enables NAND Flash memory-based storage system to be used as a block device is designed considering only characteristics of NAND Flash memory. However, since FTL precesses I/O requests which survived against buffer replacement algorithm, FTL algorithm has tight relationship with buffer replacement algorithm. Therefore, if we do not consider both FTL and buffer replacement algorithms, it is difficult to predict the actual I/O performance of the computer systems that have Flash memory-based storage system. The necessity of FTL and buffer replacement algorithm co-design arises here. In this work, we implemented I/O performance evaluation tool, IPSiNS, which simulates both the buffer replacement and FTL algorithms, simultaneously.