• Korean Journal of Materials Research
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• v.29 no.2
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• pp.106-115
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• 2019

Recently, metal cases are widely used in smart phones for their luxurious color and texture. However, when a metal case is used, electric shock may occur during charging. Chip capacitors of various values are used to prevent the electric shock. However, chip capacitors are vulnerable to electrostatic discharge(ESD) generated by the human body, which often causes insulation breakdown during use. This breakdown can be eliminated with a high-voltage chip varistor over 340V, but when the varistor voltage is high, the capacitance is limited to about 2pF. If a chip capacitor with a high dielectric constant and a chip varistor with a high voltage can be combined, it is possible to obtain a new device capable of coping with electric shock and ESD with various capacitive values. Usually, varistors and capacitors differ in composition, which causes different shrinkage during co-firing, and therefore camber, internal crack, delamination and separation may occur after sintering. In addition, varistor characteristics may not be realized due to the diffusion of unwanted elements into the varistor during firing. Various elements are added to control shrinkage. In addition, a buffer layer is inserted in the middle of the varistor-capacitor junction to prevent diffusion during firing, thereby developing a co-fired product with desirable characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.95-98
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• 2003

The positive column discharge characteristics in the long gap (440 ${\mu}m$) are investigated based on the voltage distribution among three electrodes. In particular, the effects of the amplitude and width of the short pulse applied to the address electrode on the positive column discharge characteristics are examined intensively. By proper controlling of the amplitude and width of the address short pulse, it is found that the positive column discharge in the long gap is well constructed. As a result, under the stable static voltage margin condition, the firing and sustaining voltages are as low as those of conventional short gap(60 ${\mu}m$) discharge($V _f=220V$, $V_s=150V$) and the color purity is improved. Moreover, the luminous efficiency increases up to 60% in comparison with the conventional case.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.540-543
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• 2004

The stress of MgO thin film, which is used as a dielectric protective layer in AC-PDP, was measured by a laser scanning method. MgO films were deposited bye-beam evaporation on glass substrates with dielectrics layer on them in various deposition temperatures ranging from room temperature to 300 $^{\circ}C$. The compressive stress of MgO films was increased with increasing substrate temperature due to intrinsic stress accumulation, causing the densification of the films. Both firing voltage ($V_f$) and sustaining voltage ($V_s$) were reduced for the higher compressively stressed and densified films. In the other hand, another film properties such as preferred crystallographic orientation and surface roughness seemed not to influence the discharge characteristics of $V_f$ and $V_s$ significantly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.128-130
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• 2000

A new type ac plasma display panels(PDPs) cells are designed and tested electrically and optically. One cells have the structure of sin discharge path shape and small electrode area. The other cells have the non-symmetric structure with a same electrode area. They show a higher luminous efficienccy and a lower power consumption about 30% improvement than the conventional standard ac PDP cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.776-780
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• 2009

In this study, the opto-electric properties of EL devices with PMN dielectric layer with variation of firing tempereature were investigated. For the PMN dielectric layer process, the paste was prepared by optimization of quantitative mixing of PMN powder, $BaTiO_3$, Glass Frit, $\alpha$-Terpineol and ethyl cellulose. The EL device stack consists of Alumina substrate ($Al_2O_3$), metallic electrode (Au), insulating layer (manufactured PMN paste), phosphor layer (ELPP- 030, ELK) and transparent electrode (ITO), which is well structure as a thick film EL device. The phase transformation properties of PMN dielectric with various firing temperatures of $150^{\circ}C$ to $850^{\circ}C$ was characterized by XRD. Also the opto-electric properties of EL devices with different firing temperature were investigated by LCR meter and spectrometer. We found the best opto-electric property was obtained at the condition of $550^{\circ}C$ firing which is 3432.96 $cd/m^2$ at 1948.3 pF Capacitance, 40 kHz Frequency, 40% Duty, Vth+330 V voltage.

• Journal of the Semiconductor & Display Technology
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• v.7 no.2
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• pp.63-67
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• 2008

The MgO protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by ion beam assisted deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, oxygen neutral beam assisted deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in F/$F^+$ centers, crystal orientation, surface morphology of the MgO thin film, and the discharge characteristics of AC PDP. The lowest firing voltage $(V_f)$ and the highest secondary electron emission coefficient $(\gamma)$ were obtained when the neutral beam energy was 300 eV.

• Journal of the Korea Institute of Military Science and Technology
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• v.8 no.2 s.21
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• pp.58-66
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• 2005

This paper presents miniaturized setback generators based on the conversion of mechanical energy into electrical energy for military applications, especially power supply for electronic fuzes. In order to minimize the volume of setback generators, a ring-shaped magnet enclosing a coil assembly is adopted. A mechanical safety system, shear plate, is used as a release mechanism of the setback generators to prevent the generators from operating accidentally. The setback generators are intended not to ignite an electrical detonator but to charge a capacitor which is capable of driving electronic circuit of fuze. We design the setback generators using the simulation results of an electromagnetic analysis tool, $Maxwell^{(R)}$ 2D. In experimental study, we perform safety tests of the shear plate and firing tests of the fabricated setback generators. The present setback generators show that the voltage of 14.2V is charged at the capacitor of $30{\mu}F$ within the charging time of 0.68msec and the critical acceleration for safety is 5,000G, thus verifying that the setback generators with a ring-shaped permanent magnet can be applicable to the power supply of small-caliber electronic fuze.

• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.615-618
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• 2000

A number of studies have recently been made on hardware for a biological neuron f3r application with information processing functions of neural networks. We have been trying to produce hardware from the viewpoint that development of a new hardware neuron model is one of the important problems in the study of neural networks. In this paper, we first discuss the circuit structure of a pulse-type hardware neuron model with the enhancement-mode MOSFETs (E-MOSFETs). And we construct a pulse-type hardware neuron model using I-MOSFETs. As a result, it is shown that our proposed new model can exhibit firing phenomena even if the power supply voltage becomes less than 1.5[V]. So it is verified that our model is profitable for IC.