• 전자공학회논문지A
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• 제31A권7호
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• pp.69-75
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• 1994

A very fine pattern formation process using double exposure is investigated, which can overcome the resolution limit of optical wafer stepper. The very fine pattern can be obtained by moving the edge profile of large pattern by means of moving the stepper stage. The simulation results show that the light transmittance decrease bellow 9%, and the contrast increase to 16.6% for the 0.3$\mu$m photoresist pattern exposeed by the double exposure using i-line wafer stepper. And the experimental results show that fine photoresist pattern as short as 0.2$\mu$m can be obtained without a loss of photoresist thickness. Also, it proves that the depth of focus for 0.3$\mu$m pattern is longer than $1.5\mu$m. And, the very fine negative photoresist pattern was formmed by using the double exposure technique and the image reversal process.

• 반도체디스플레이기술학회지
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• 제10권4호
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• pp.65-70
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• 2011

These days, printed electronics attract attention from electronics industry. In this paper, the fabrication of the fine patterns by Near Field Electro Spinning (NFES) was studied by using Ag ink on silicon wafer (substrate). Two types of ink, the high viscous ink Ag-200 and low viscous ink Ag-15, were used. The fine and uniform patterns were easily fabricated by using Ag-200 because jet breakup is less occurred in high viscosity solution. As increasing flow rate of solution, aspect ratio of Ag pattern decreased. And there was optimum applied voltage for fine pattern. In case of Ag-200, the optimum applied voltage was about 2.02KV. When pattern was fabricated by NFES, the pattern width and height were affected by many factors such as viscosity, flow rate of solution, applied voltage etc.

• 소성∙가공
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• 제19권8호
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• pp.474-479
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• 2010

Newly suggested hybrid LED package can reduce the number of LED processes and enhance light efficacy in virtue of its integrated optical patterns. Square-type pyramid pattern was chosen for the integrated optical pattern in this study, and it was proved that the pattern enhances illuminance about three times and luminance about two and half times by optical simulation. Square-type pyramid patterns of 0.02mm height and 0.04mm pitch were successively machined on a copper mold which is necessary for imprinting the integrated pattern. Hybrid LED package with integrated optical pattern will be manufactured with ultra-fine machined mold in future study.

• 대한인간공학회:학술대회논문집
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• 대한인간공학회 1996년도 추계학술대회논문집
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• pp.197-205
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• 1996

Unification of neural network with a hierarchical pattern recognition is presented for recognizing large set of objects. A two-step identification procedure is developed for pattern recognition: coarse and fine identification. The coarse identification is designed for finding a class of object while the fine identification procedure is to identify a specific object. During the training phase a course neural network is trained for clustering larger set of reference objects into a number of groups. For training a fine neural network, expert neural network is also trained to identify a specific object within a group. The presented idea can be interpreted as two step identification. Experimental results are given to verify the proposed methodology.

• 한국정밀공학회지
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• 제20권5호
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• pp.210-217
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• 2003

In this study, to achieve the optimal conditions for mechanical hyper-fine pattern fabrication process, deformation behavior of the materials during indentation was studied with numerical method by ABAQUS S/W. Polymer (PMMA) and brittle materials (Si, Pyrex glass) were used as specimens, and forming conditions to reduce the elastic restoration and pile-up was proposed. The indenter was modeled a rigid surface. Minimum mesh sizes of specimens are 1-l0mm. The result of the investigation will be applied to the fabrication of the hyper-fine pattern and mold.

• 한국정밀공학회지
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• 제20권9호
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• pp.47-54
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• 2003

In this study, to achieve the optimal conditions for mechanical hyper-fine pattern fabrication process, deformation behavior of the materials during indentation was studied with numerical method by ABAQUS S/W. Polymer (PMMA) and brittle materials (Si, Pyrex glass) were used as specimens, and forming conditions to reduce the elastic re cover and pile-up were proposed. The indenter was modeled a rigid surface. Minimum mesh sizes of specimens are 1 -l0nm. Comparison between the experimental data and numerical result demonstrated that the finite element approach is capable of reproducing the loading-unloading behavior of a nanoindentation test. The result of the investigation will be applied to the fabrication of the hyper-fine pattern.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 추계학술대회 논문집
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• pp.333-336
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• 2002

In this study, to achieve the optimal conditions for mechanical hyper-fine pattern fabrication process, deformation behavior of the materials during indentation was studied with numberical method by ABAQUS S/W. Polymer (PMMA) and brittle materials (Si, Pyrex glass) were used as specimens, and forming conditions to reduce the elastic restoration and bur was proposed. The indenter was modeled a rigid surface. Minimum mesh sizes of specimens are 1-l0nm. The result of the investigation will be applied to the fabrication of the hyper-fine pattern and mold.

• 한국정밀공학회지
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• 제21권3호
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• pp.139-146
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• 2004

In this study, to achieve the optimal conditions for mechanical hyper-fine pattern fabrication process, deformation behavior of the materials during indentation scratch test was studied with numerical method by ABAQUS S/W. Brittle materials (Si, Pyrex glass 7740) were used as specimens, and forming conditions to reduce the elastic recovery and pile-up were proposed. The indenter was modeled as a rigid surface. Minimum mesh sizes of specimens are 1-l0nm. Variables of the nanoindentation scratch test analysis are scratching speed, scratching load, tip radius and tip geometry. The nano-indentation scratch tests were performed by using the Berkovich pyramidal diamond indenter. Comparison between the experimental data and numerical result demonstrated that the FEM approach can be a good model of the nanoindentation scratch test. The result of the investigation will be applied to the fabrication of the hyper-fine pattern.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.502-502
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• 2007

Current thin film process using memory device fabrication process use expensive processes such as manufacturing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as PCB, FCPB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line for the electronic circuit board using metal ink contains Ag nano-particles. Metal lines are fabricated by two types of printing methods. One is a conventional printing method which is able to quick fabrication of fine pattern line, but has various difficulties about thick and high resolution DPI(Dot per Inch) pattern lines because of bulge and piling up phenomenon. Another(Second) methods is sequential printing method which has a various merits of fabrication for fine, thick and high resolution pattern lines without bulge. In this work, conductivities of metal pattern line are investigated with respect to printing methods and pattern thickness. As a result, conductivity of thick pattern is about several un.

• 한국생산제조학회지
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• 제18권6호
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• pp.558-564
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• 2009

To aim at obtaining a correct and fine small pattern by an electron beam lithography several conditions and methods affecting a real pattern shape needs to be investigated. A micro/nano sized pattern shape is sometimes dependent on the scanning method. In this work, four types of scanning methods are implemented and their characteristics are investigated. For a $11\times11um$ pattern, a Zigzag scanning method proves a precise pattern generation. The other ways such as SEM scanning and swirl in-out scanning method result in some distorted pattern shape. It is proved that abrupt change in the pattern generation limits to obtaining a fine and small pattern.