• 제목/요약/키워드: Fine line width

검색결과 62건 처리시간 0.015초

심의고(深依考)

  • 김인숙
    • 복식
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    • 제1권
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    • pp.101-117
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    • 1977
  • This thesis is a study of the Simui(深衣) system which was a dress regulation peculiar to old China with skirt and coat. The origin of Simui is a very long time, that is, before Ju dynasty in China. Its wearing range had a large circle irrespective of rank and good or bad luck. This was a ordinary dress to the Emperor or the lords, a below court attire or a below sacrificial rites attire to the illustrious officials, and good luck dress to the common people. But this was a funeral rites attire or coming-of-age ceremony attire in domestic behaviour. In the times of Song dynasty, lots of confucian scholars had put on this simui because of Juhi's recommendation for domestic behaviour. This Simui had been put on through all the times of China and was the original text of all the dress. Especially the court attire and silkworm working dress of Empress, and the court attire and underwear court attire of Emperor is also made out of this Simui, therefore this is a origin of the ceremonial dress which formed into long coat. In Korea it is said that this Simui was brought in prior to the middle of Goryeo dynasty. But we can't tell the correct transmitted age. According to the following records in Goryeo History, "King had put on the Simui as a sacrificial rite attire in the times of Yejong". It is sure that this Simui was brought in prior to the times of Yejong. In fact, lots of confucian scholars had put on the Simui since the introduction of confucianism in the end of Goryeo dynasty and after that time this was taken by many confucian scholars through Yi dynasty. Korean Simui system was complied with Chinese system through confucian domestic behaviour, This was respected for court dress of confucian scholars, as it were, Chumri, (an ordinary dress of scholars), Nansam (a uniform of upper student), and Hakchangui (a uniform of confucian student). There are many deta about Simui system in the book of Yeki, chapter Okcho and Simui, and other many canfucian books. But we didn't demonstrate the theory about it till now. Especially there are diversifies of opinions about the phrase of "Sok Im Ku Byun" in Yeki. Simui was cut in separate and then was stitched together in one piece. Generally its shape had round sleeve and angled lapel, its length reaches to the anklebone. And it has a line around the lapel, the sleeve band, and the edge of skirt. It is called Simui because the body can be wrapped deeply in broad width and large sleeve. The Simui was made of white fine linen and was cut by the natural size of body. Every part of Simui had a profound meaning; the round sleeve in compliance with regulation can keep a courtesy when a walker moves his hands and the angled lapel like a carpenter's square in compliance with square keeps them front loosing their Justice and a string of the back also keeps them loosing from their righteousness and the flat lower part of Simui makes their heart and mind calm. This Simui was usually attendant on a head cover and belt made cloth, and black shoes. This thesis was made a study of documents and portrait from Yi dynasty, for the actual object was not obtained.

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게르마늄 Prearmophization 이온주입을 이용한 티타늄 salicide 접합부 특성 개선 (Effects of the Ge Prearmophization Ion Implantation on Titanium Salicide Junctions)

  • 김삼동;이성대;이진구;황인석;박대규
    • 한국재료학회지
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    • 제10권12호
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    • pp.812-818
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    • 2000
  • 본 연구에서는 Ge PAM이 선폭 미세화에 따른 C54 실리사이드화 및 실제 CMOS 트랜지스터 접합부에서의 각종 전기적 특성에 미치는 영향을, As PAM과의 비교를 통하여 관찰하였다. 평판 상에서 각 PAM 및 기판의 도핑 상태에 따른 Rs의 변화량을 측정하였으며, 각 PAM 방식은 기존의 살리사이드 TiSi$_2$에 비해 개선된 C54 형성 효과를 보였다. 특히, Ge PAM은 n+ 기판에서 As PAM보다 효과적인 실리사이드화를 보였고, 이 경우 XRB 상에서도 가장 강한 (040) C54 배향성을 나타내었다. ~0.25$\mu\textrm{m}$ 선폭 및 n+ 접합층에서 기존 방식에 비해 As과 Ge PAM은 각각 ~85,66%의 개선된 바저항을 보였으며, P+ 접합층에서는 As과 Ge PAM 모두 62~63% 정도의 유사한 Rs 개선 효과를 보였다. 콘택 저항에서도 각 콘택 크기 별로 바저항(bar resistance) 개선과 같은 경향의 PAM 효과를 관찰하였으며, 모든 경우 10 $\Omega$/ct. 이하로 양호한 결과를 보였다. 누설 전류는 area 형 패턴에서는 모든 공정 조건에서 <10E-14A/$\mu\textrm{m}^{2}$ 이하로, edge 형에서는 특히 P+ 접합부에서 As 또는 Ge PAM 적용 시 <10E-13 A/$\mu\textrm{m}^{2}$ 이하로 다소 누설 전류를 안정화시키는 결과를 보였다. 이러한 결과는 XTEM에 의해 관찰된 바 Ge PAM 적용 시 기존의 경우에 (PAM 적용 안한 경우) 비해 유사한 평활도의 TiSi$_2$박막 형상과 일치하였으며, 또한 본 실험의 Ge PAM 이온주입 조건이 접합층에 손상을 주지 않는 범위에서 적정화되었음을 제시하였다

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