• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.633-636
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• 1999

In this study, we have fabricated amorphous FeZrBAg thin films with low core losses by using DC magnetron sputtering method. After deposition, rotational field annealing (RFA) method was performed in the dc field of 1.5 kOe. The amorphous FeZrBAg thin films produced by annealing at 35$0^{\circ}C$ was founded to have high permeability of 8680 at 100 MHz, 0.2 mOe, low coercivity of 0.86 Oe high magnetization of 1.5 T and very low core loss of 1.3 W/cc at 1 MHz, 0.IT respectively. Excellent soft magnetic properties in a amorphous FeZrBAg thin films in the present study are presumably the homogeneous formation of very fine bcc $\alpha$-Fe crystalline with the 8.2 nm in an amorphous FeZrBAg thin film matrix.