• Transactions of Materials Processing
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• v.22 no.3
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• pp.171-177
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• 2013

Vacuum-assisted thermoforming is one of the critical steps for successful application of film insert molding (FIM) to make parts of complex shape. If the thickness distribution of the formed film is non-uniform, then cracking, deformation, warpage, and wrinkling can easily occur at the injection molding stage. In this study, the simulation of thermoforming was performed to predict the film thickness distribution, and the results were compared with experiments. Uniaxial tensile tests with a constant crosshead speed for various high temperatures were conducted to investigate the stress-strain behavior. An instance of yielding occurred at the film temperature of $90^{\circ}C$, and the film stiffness increased with increasing crosshead speed. Two types of viscoelastic models, G'Sell model, K-BKZ model, were used to describe the measured stress-strain relationship. The predicted film thickness distributions were in good agreement with the experimental results.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.483-491
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• 1992

Plasma silicon oxynitride film has been applied as a final passivation layer for semiconductor devices, because it has high resistance to humidity and prevents from alkali ion's penetration, and has low film stress. Structure properties of plasma silicon oxynitride film have been studied experimentally by the use of FT-IR, AES, stress gauge and ellipsometry. In this experiment,Si-N bonds increase as NS12TO/(NS12TO+NHS13T) gas ratio increases. Peaks of Si-N bond, Si-H bond and N-H bond were shifted to high wavenumber according to NS12TO/(NS12TO+NHS13T) gas ratio increase. Absorption peaks of Si-H bond were decreased by furnace anneal at 90$0^{\circ}C$. The atomic composition of film represents that oxygen atoms increase as NS12TO/(NS12TO+NHS13T) gas ratio increases, to the contrary, nitrogen atoms decrease.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.690-693
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• 2002

This paper is concerned on method of simultaneous force(stress) and temperature sensing with PVDF film. PVDF film has piezoelectric and pyroelectric properties. Therefore, it senses changes of stress and temperature. But it's output is affected with two properties. Using different medium in a sensing element, this problem is solved. Two structures induce different equations that its solutions are changes of stress and temperature. This method and result is applicable in skin sensor that has complexity of material and structure.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.3 s.174
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• pp.685-690
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• 2000

This paper deals with the stress singularity induced at the interface corner between the viscoelastic thin film and the rigid substrate as the film absorbs moisture from the ambient environment. Th e time domain boundary element method is employed to investigate the behavior of interface stresses. The order of the free-edge singularity is obtained numerically for a given viscoelastic model. It is shown that the stress singularity factor is relaxed with time, while the order of the singularity increases with time for the viscoelastic model considered.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.145-148
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• 2001

In this paper, polycrystalline silicon thin film transistor using by Solid Phase Crystallization(SPC) were fabricated, and these devices were measured and analyzed the electrical output and transfer characteristics along to DC voltage stress. The transfer characteristics of polycrystalline silicon thin film transistor depended on drain and gate voltages. Threshold voltage is high with long channel length and narrow channel width. And output characteristics of polycrystalline silicon thin film transistor flowed abruptly much higher drain current. The devices induced electrical stress are decreased drain current. At last, field effect mobility is the faster as channel length is high and channel width is narrow.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.146-153
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• 2003

This paper deals with the stress singularity induced at the interface corner between the viscoelastic thin film and the rigid substrate subjected to the combined influence of temperature change and moisture absorption. A boundary element analysis is employed to investigate the behavior of interface stresses. The film is assumed to be thermorheologically simple. It is further assumed that moisture effects are analogous to thermal effects. Numerical results are presented for a given viscoelastic model, indicating the singular residual stresses induced during cooling down from the curing temperature, and how they can be altered by subsequent moisture absorption at room temperature.

• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.35-39
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• 2010

Interfacial stress singularity induced in an analysis model consisting of the polymeric thin film and the elastic substrate has been investigated using the boundary element method. The interfacial singular stresses between the viscoelastic thin film and the elastic substrate subjected to a uniform moisture ingression are investigated for the case of a small interfacial edge crack. It is assumed that moisture effects are assumed to be analogous to thermal effects. Then, the overall stress intensity factor for the case of a small interfacial edge crack is computed. The numerical procedure does not permit calculation of the limiting case for which the edge crack length vanishes.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.12
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• pp.1027-1034
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• 2014

The shear stress on a surface due to the thin film fluid flow is an important issue. In case of a rotating disk, the fluid is delivered to the edge of the disk by centrifugal force, which acts as a body force on the fluid. Wear of a surface is affected by the shear stress acting on the surface and curvature. In this study, we utilize computational fluid dynamics software to model the ratio of curvature and local shear stress on solid surfaces. The key goal of the study is to determine an optimized curvature for the thin film fluid flow on a solid surface in order to minimize the local shear stress affecting the wear of this surface. Our results on the effects of curvature will be utilized for the design of devices that utilize thin film fluid flow on a solid surface, such as rotating-disk spray systems and thin film coating.

• Journal of Surface Science and Engineering
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• v.40 no.2
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• pp.91-97
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• 2007

In this study we investigated the oxygen effect on the nucleation and its residual stress during unbalanced magnetron sputtering. Up to 0.5% in oxygen flow rate, cubic phase (c-BN) was dominated with extremely small fraction of Hexagonal phase (h-BN) of increasing trend with oxygen concentration, whereas hexagonal phase is dominated beyond 0.75% flow rate. Interestingly, the residual stress in cubic-phase-dominated films was substantially reduced with small amount of oxygen (${\sim}0.5%$) down to a low value comparable to the h-BN case. This may be because oxygen atoms break B-N $sp^3$ bonds and make B-O bonds more favorably, increasing $sp^2$ bonds preference, as revealed by FTIR and NEXAFS. It was confirmed by experimental facts that the threshold bias voltage for nucleation and growth of cubic phase were increased from -55 V to -70 V and from -50 V to -60 V respectively. The reduction of residual stress in O-added c-BN films is seemingly resulting from the microstructure of the films. The oxygen tends to increase slightly the amount of h-BN phase in the grain boundary of c-BN and the soft h-BN phase of 3D network including surrounding nano grains of cubic phase may relax the residual stress of cubic phase.

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.116-119
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• 2000

The a-axis and c-axis prefer oriented SBT thin films could be deposited on Pt(111)/Ti/$SiO_2$$650^{\circ}C$). The c-axis preferred orientation of SBT film can be obtained by Sr deficiency and high compressive stress. However, the a-axis-oriented grains can be formed under stoichiometric Sr content and nearly stress-free state.