• Title/Summary/Keyword: Film stress

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Anisotropic, non-uniform misfit strain in a thin film bonded on a plate substrate

  • Huang, Y.;Ngo, D.;Feng, X.;Rosakis, A.J.
    • Interaction and multiscale mechanics
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    • v.1 no.1
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    • pp.123-142
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    • 2008
  • Current methodologies used for the inference of thin film stresses through curvature measurements are strictly restricted to stress and curvature states which are assumed to remain uniform over the entire film/substrate system. These methodologies have recently been extended to non-uniform stress and curvature states for the thin film subject to non-uniform, isotropic misfit strains. In this paper we study the same thin film/substrate system but subject to non-uniform, anisotropic misfit strains. The film stresses and system curvatures are both obtained in terms of the non-uniform, anisotropic misfit strains. For arbitrarily non-uniform, anisotropic misfit strains, it is shown that a direct relation between film stresses and system curvatures cannot be established. However, such a relation exists for uniform or linear anisotropic misfit strains, or for the average film stresses and average system curvatures when the anisotropic misfit strains are arbitrarily non-uniform.

Effects of Organic Additives on Residual Stress and Surface Roughness of Electroplated Copper for Flexible PCB

  • Kim, Jongsoo;Kim, Heesan
    • Corrosion Science and Technology
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    • v.6 no.4
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    • pp.154-158
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    • 2007
  • For the application of flexible printed circuit board (FPCB), electroplated copper is required to have low surface roughness and residual stress. In the paper, the effects of surface roughness and residual stress of electroplated copper as thick as $8{\mu}m$ were studied on organic additives such as inhibitor, leveler and accelerator. Polyimide film coated with sputtered copper was used as a substrate. Surface roughness and surface morphology were measured by 3D-laser surface analysis and FESEM, respectively. Residual stress was calculated by Stoney's equation after measuring radius curvature of specimen. The addition of additives except high concentration of accelerator in the electrolyte decreased surface roughness of electroplated copper film. Such a tendency was explained by the function of additives among which the inhibitor and the leveler inhibit electroplating on a whole surface and prolusions, respectively. The accelerator plays a role in accelerating the electroplating in valley parts. The inhibitors and the leveler increased residual stress, whereas the accelerator decreased it. It was thought to be related with entrapped additives on electroplated copper film rather than the preferred orientation of electroplated copper film. The reason why additives lead to residual stress remains for the future work.

Residual Stress and Growth Orientation in $Y_2O_3$ Thin Films Deposited by Reactive Sputtering (반응 스퍼터링법으로 제조한 $Y_2O_3$ 박막의 잔류응력과 성장 방향성)

  • 최한메;최시경
    • Journal of the Korean Ceramic Society
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    • v.32 no.8
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    • pp.950-956
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    • 1995
  • Y2O3 thin films were deposited by reactive sputtering of Y target in Ar and O2 gas mixture. Residual stress was measrued by sin2$\psi$ method of x-ray diffraction (XRD) and growth orientation was examined by measuring the relative intensity of (400) plane and (222) plane of Y2O3 films. In the case that Y2O3 films were deposited at 40$0^{\circ}C$ and at low working pressure below 0.05 torr the film had large compressive stress and (111) plane orientation. At working pressure of about 0.10 torr the film had small compressive stress and (100) orientation. Above working pressure of 0.20 torr, the films had nearly zero stress and random orientation. In the case that the (111) oriented film deposited at low working pressure below 0.05 torr, as substrate temperature decreased, (111) orientation increased. In the case the film, with (100) orientation, deposited at working pressure of about 0.10 torr, (100) orientation increased with decresing substrate temperature. These relationship of residual stress and growth orientation can be explained by the relationship of surface energy and strain energy.

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Early Stage Growth Structure and Stress Relaxation of CoCrPt Thin Films on Spherically Modulated Polymer Surface

  • Kim, Sa-Rah;Jeong, Jun-Ho;Shin, Sung-Chul;Son, Vo Thanh;Jeon, Bo-Geon;Kim, Cheol-Gi;Jeong, Jong-Ryul
    • Journal of Magnetics
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    • v.15 no.1
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    • pp.12-16
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    • 2010
  • Combined study of in-situ stress measurements and atomic force microscopy (AFM) revealed drastic stress relaxation in the CoCrPt and PS(styrene)-PVP(vinyl pyridine) polymer hybrid structure that was closely related to the growth structure of the film. We have observed not only no large initial growth stress at the initial stages of film growth but also twice smaller stress in magnitude with opposite sign in the CoCrPt/PS-PVP/Si sample. The microstructural studies using AFM at the various film growth stages revealed that the film growth structure plays an important role in the stress relaxation mechanism of CoCrPt films on a corrugated polymer surface.

Evaluation of the Residual Stress with Respect to Supporting Type of Multi-layer Thin Film for the Metallization of Pressure Sensor (압력센서의 배선을 위한 다층 박막의 지지조건 변화에 따른 잔류응력 평가)

  • Shim, Jae-Joon;Han, Geun-Jo;Han, Dong-Seup
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.28 no.5
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    • pp.532-538
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    • 2004
  • MEMS technology applying to the sensors and micro-electro devices is complete system. These microsystems are made by variable processes. Especially, the mentallization process has very important functions to transfer the power operating the sensor and signal induced from sensor part. But in the structures of MEMS the local stress concentration and deformation are often yielded by an irregular geometrical shape and different constraint. Therefore, this paper studies the effect of supporting type and thickness ratio about thin film of the substrate on the residual stress variation when the thermal loads is applied to the multi-layer thin film fabricated by metallization process. Specimens were made from several materials such as Al, Au and Cu. Then, uniform thermal load was applied, repeatedly. The residual stress was measured by FE Analysis and nano-indentation method using AFM. Generally, the specimen made of Al induced the larger residual stress than that of made of other materials. Specimen made of Cu and Au having the low thermal expansion coefficient induces the minimum residual stress. Similarly, the lowest indentation length was measured by nano-indentation method in the Si/Au/Cu specimen. Particularly, clusters are created in the specimen made of Cu by thermal load and the indentation length became increasingly large by cluster formation.

Pin-Boss Stress Analysis Coupled with Oil Film Pressure of a Diesel Engine Piston Receiving 200 bar Combustion Pressure (200 bar 연소압을 받는 디젤엔진 피스톤 핀-보스의 유막 압력을 고려한 응력해석)

  • Chun, Sang-Myung;Lee, J.S.;Joo, D.H.;Park, S.J.
    • Tribology and Lubricants
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    • v.24 no.4
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    • pp.196-204
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    • 2008
  • In this study, the pressure distributions on the oil film of piston pin bearings are found by two-dimensional lubrication analysis in order to help the optimum design of the bearings of piston pin. The lubrication analysis is carried out together with an equation related with the oil pressure-viscosity index. The oil film pressure distribution is used as an input data for pressure boundary conditions at the piston pin-boss surface. Finally, the piston pin-boss stress distribution coupled with the thermal stress is calculated, and then compared with the results of the stress analysis which is not counted with the oil film pressure boundary condition.

The Effect of Stress on the Thermal Stability of the TiS$i_2$ Film (TiS$i_2$ 박막의 열안정성에 미치는 막 스트레스의 영향)

  • Kim, Yeong-Uk;Kim, Yeong-Uk;Go, Jong-U;Lee, Nae-In;Kim, Il-Gwon;Park, Sun-O;An, Seong-Tae;Lee, Mun-Yong;Lee, Jong-Gil
    • Korean Journal of Materials Research
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    • v.3 no.1
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    • pp.12-18
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    • 1993
  • Abstract The effect of the film stress on the thermal stability of TiSi, films under the dielectric overcoat was investigated. TiS$i_2$ films with the sheet resistance of 1.2 ohm/sq. were produced by a solid-state reaction between sputtered Ti film and single-crystalline Si in an RTA (rapid thermal anneal) machine. Dielectric overcoats such as the USG (Undoped Silicate Glass, Si$O_2$) film and the PE-SiN(S$i_3$$N_4$) film were deposited by AP-CVD and PE-CVD, respectively, on the TiS$i_2$ film. The thermal stability of the TiSi, film was evaluated by changes in the sheet resistance, film stress and microstructure after furnace anneals at 90$0^{\circ}C$. Agglomeration of the TiSi2 film high temperatures results in the increase of sheet resistance and the decrease of tensile stress of TiSi, film. The stress level of the TiSi" PE-SiN and ~SG films at 90$0^{\circ}C$C was 1.3${\times}{10^{9}}$, 1.25 ${\times}{10^{10}}$, 2.26 ${\times}{10^{10}}$ dyne/c$m^2$ in tensile, respectively. Dielectric films deposited by CVD on TiSi, was effective on preventing agglomeration of TiSi,. The PE-SiN film mproved the thermal stability of TiSi, more effectively than the AP-CVD USG film. It is considered that agglomeration of the TiS$i_2$ film under the stress of dielectric overcoat at high temperature can be caused by a diffusional flow of atom called Nabarro-Herring microcreep.reep.

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Studies on the Properties of the Plasma TEOS $SiO_2$ Film (PECVD TEOS $SiO_2$막의 특성에 관한 연구)

  • 이수천;이종무
    • Journal of the Korean Ceramic Society
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    • v.31 no.2
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    • pp.206-212
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    • 1994
  • Effects of the film deposition process parameters on the properties such as deposition rate, etch rate, refractive index, stress and step coverage of plasma enhanced chemical vapor deposited (PECVD) tetraethylorthosilicate glass (TEOS) SiO2 film were investigated and analysed using SEM, FTIR and SIMS techniques. Increasing TEOS flow or decreasing O2 flow increased the deposition rate and the compressive stress of the oxide film but produced a less denser film. The deposition rate decreased owing to the decrease in the sticking coefficient of the TEOS and the O2 molecules onto the substrate Si with increasing the substrate temperature. Increasing the substrate temperature produced a denser film with a lower etch rate and the higher refractive index by lowering SiOH and moisture contents. Increasing the rf power increases the ion bombardment energy. This increase in energy, in turn, increases the deposition rate and tends to make the film denser. No appreciable changes were found in the deposition rate but the refractive index and the stress of the film decreased with increasing the deposition pressure. The carbon content in the plasma TEOS CVD oxide film prepared under our standard deposition conditions were very low according to the SIMS analysis results.

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Dispersive Wave Analysis of a Beam under Impact Load by Piezo-Electric Film Sensor and Wavelet Transform (충격하중을 받는 보에서 압전 필름센서와 웨이브렛 변환을 이용한 문산파동의 해석)

  • Kwon., Il-Bum;Choi, Man-Yong;Jeong., Hyun-Jo
    • Journal of the Korea institute for structural maintenance and inspection
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    • v.5 no.4
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    • pp.215-225
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    • 2001
  • Stress waves monitored on the surface of structures under various loading conditions can provide useful information on the structural health status. In this paper, stress waves are measured by several sensors when a steel beam is impacted by a ball drop. The sensors used include the piezo-electric film Sensor, the electrical strain gage, and the ultrasonic transducer, and special attention is given to the pieza film sensor. The wavelet transform is used for the time-frequency analysis of dispersive waves propagating in the beam. The velocities of the wave produced in the team due to the lateral impact is found to be frequency-dependent and identified as the flexural wave velocity based on the comparisons with the Timoshenko beam theory. A linear impact site identification method is developed using the flexural wave, and the impact sites of the beam can be accurately estimated by the piezo film sensors. It is found that the piezo film sensor is appropriate for sensing stress waves due to impact and for locating impact sites in the beam.

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Elastohydrodynamic Lubrication of Line Contacts Incorporating Bair & Winer's Limiting Shear Stress Rheological Model (한계전단응력형태의 Bair & Winer 리올로지 모델을 사용한 선접촉 탄성유체윤활해석)

  • 이희성;양진승
    • Tribology and Lubricants
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    • v.14 no.1
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    • pp.85-93
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    • 1998
  • The Bair & Winer's limiting shear stress rheological model is incorporated into the Reynolds equation to successfully predict the traction and film thickness for an isothermal line contact using the primary rheological properties. The modified WLF viscosity model and Barus viscosity model are also adapted for the realistic prediction of EHD tractional behavior. The influences of the limiting shear stress and slide-roll ratio on the pressure spike, film thickness, distribution of shear stress and nonlinear variation of traction are examined. A good agreement between the disc machine experiments and numerical traction prediction has been established. The film thickness due to non-Newtonian effects does not deviate significantly from the fdm thicknesss with Newtonian lubricant.