• 제목/요약/키워드: Film orientation

검색결과 897건 처리시간 0.024초

수직자기기록매체 CoCrMo 박막의 구조와 자기적 성질 (Structural and Magnetic Properties of perpendicular Recording Medium CoCrMo thin Film)

  • 남인탁;홍양기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1988년도 추계학술대회 논문집
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    • pp.46-46
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    • 1988
  • Structural and magnetic properties of Co-Cr-Mo films were investigated in connection with sputtering conditions. Films were prepared using a convention RF sputtering system. X-ray diffractometry, scanning electron microscopy and transmission electron microscopy were employed to investigate structure properties. Vibrating sample magnetometry was used for coercivity and saturation magnetization measurements. Co-Cr-Mo films displayed reasonable values of perpendicular coercivity and saturation magnetization for perpendicular recording media and showed good perpendicular orientation of the hcp c-axis to the film surface. Perpendicular coercivity was strongly dependent upon substrate technique showed better c-axis orientation than hose using the stationary substrate. Co-Cr-Mo films of 2.9 at. % Mo content showed maximum perpendicular coercivity and saturation magnetization. The films deposited at lower Ar pressure showed good magnetic properties. There was no explicit relationship between the columnar structure and c-axis orientation. Co-Cr-Mo films was found to have suitable structural and magnetic properties for perpendicular recording media.

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Polyamic Acid 알킬아민 염 랭뮤어-블로젯막의 분자 배향에 관한 연구 (A Study on the Molecular Orientation of Polyamic Acid Alkylamine Salt Langmuir-Blodgett Films)

  • 정순욱;임현성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.53-56
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    • 2000
  • Langmuir-Blodgett(LB) technique is the best candidate for the future molecular electronic devices. But, these molecular thin film devices require the bulk properties that are influenced by the molecular orientations. So, this is of current interest in molecular electronic device fabrications of new materials. In this study, quantitative evaluation of molecular orientation in LB films of PAAS was performed by comparing the absorption intensities of the FT-IR transmission and reflection-absorption spectra and the polarized UV/visible absorption spectra. It was found that the polar angle( $\theta$ ) of the dipole moment is about 68$^{\circ}$ and the tilting angle of the alkyl chain is about 11.5$^{\circ}$

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LCD의 폴리이미드 배향막에서 Rubbing에 의한 분자배향에 관한 연구 (A Study on Rubbing-induced Molecular Alignment on an Orientation Layer of Polyimide for Liquid Crystal Display)

  • 최승우;정재원;김승빈;황상만;천희곤;조동율
    • 한국전기전자재료학회논문지
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    • 제11권4호
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    • pp.306-313
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    • 1998
  • To elucidate the liquid crystal(LC) molecules alignment mechanism, it is important to determine the molecular orientation of the rubbed polymer surface molecules that directly contact with LC molecules. In this work, the molecular orientation on a rubbed surface of polyimide (SE-3310, Nissan) film has been studied by polarized FTIR absorption spectroscopy. It has been found that molecular chain on the rubbed surface of polymide film are oriented along the rubbing direction and are tilted up on an average by 5.0$^{\circ}$. In the SHG(Second Harmonic Generation) measurement, the pretilt angle of molecular chain on the poylmide fim was 4.6$^{\circ}$ fro, the surface plane. And the pedit angle of liquid crystal (ZLI-2293, Merck) molecules measured by crystal rotation method was 5.4$^{\circ}$in the same rubbing condition.

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Crystallization and Electrical Properties of SBN60 Thin Films Prepared by Ion Beam Sputter Deposition

  • Jang, Jae-Hoon;Jeong, Seong-Won;Lee, Hee-Young
    • Transactions on Electrical and Electronic Materials
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    • 제6권1호
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    • pp.10-13
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    • 2005
  • $Sr_{0.6}Ba_{0.4}Nb_{2}O_{6}$, hereafter SBN60, thin films of 300 nm thickness were deposited using ion beam sputtering technique, in which sintered ceramic target of the same composition was utilized and the $Ar:O_{2}$ gas ratio was controlled during deposition onto $Pt(100)/TiO_{2}/SiO_{2}/Si$ substrate. Crystallization and orientation behavior as well as electrical properties of the films were examined after annealing treatment at $650{\sim}800{\cric}C$. It was found that the film orientation was dependent upon $Ar:O_{2}$ratio, in which strong (00l) orientation was developed when the gas ratio was about 1:4 at $4.3{\times}10^{-4}$ torr. Typical remanent polarization (2Pr), the coercive field (Ec) and the dielectric constant of Pt/SBN60/Pt thin film capacitor were approximately $10{\mu}C/cm^{2}$, 60 kV/cm, and 615, respectively.

AC PDP의 MgO 결정방향성과 증착조건간의 상관관계에 관한 연구 (The study of the relationships between the MgO crystal orientation and the conditions of deposition on AC-PDP)

  • 장용민;허정은;김덕원;신중홍;박정후
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1523-1524
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    • 2006
  • There arc several important issues in AC PDP researches such as cost reduction, reliability, and good image quality. The properties of MgO layer is thought to be one of the most important (actors that affects the panel reliability through the firing voltage variation. The MgO thin film mainly has (111), (200) and (220) crystal orientation. It is reported that (111)-oriented film helps decreasing the discharge voltage, and (200)-oriented film improves the misfiring on high temperature and the image sticking. In this study, we investigated the relations between the crystal orientation and e-beam evaporation process parameters such asdeposition rate, temperature of substrate, and distance between the target(MgO tablet) and the substrate.

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Thin Film Bulk Acoustic Resonators for RF Applications

  • Linh, Mai;Lee, Jae-Young;Yoon, Gi-Wan
    • Journal of information and communication convergence engineering
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    • 제4권3호
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    • pp.111-113
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    • 2006
  • A new thin film deposition technique of piezoelectric ZnO film and its successful application for film bulk: acoustic resonator (FBAR) devices are presented. The two-step deposition used seems to be able to deposit ZnO film with a highly preferred orientation. The FBAR devices with the ZnO films show an excellent return loss of $35{\sim}50$ dB at $1.5{\sim}2$ GHz.

RF 마그네트론 스퍼터링법에 의해 증착된 $Ba_{0.65}Sr_{0.35}TiO_3$ 박막의 전기적 특성 분석 (Characterization of Electrical Properties of $Ba_{0.65}Sr_{0.35}TiO_3$Thin Films Deposited by RF Magnetron Sputtering)

  • 양기덕;조호진;조해석;김형준
    • 한국세라믹학회지
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    • 제32권4호
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    • pp.441-447
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    • 1995
  • Ba0.65Sr0.35TiO3 (BST) thin films were deposited on Pt/SiO2/Si(100) substrate by rf magnetron sputtering. The substrate temperature changed from 35$0^{\circ}C$ to 55$0^{\circ}C$ and crystalline BST thin films were deposited above 45$0^{\circ}C$. Most of the films had (111) preferred orientation regardless of deposition temperature, but the films changed to (100) preferred orientation as gas pressure increased. The dielectric constant increased with increasing substrate temperature and film thickness, and ranged from 100 to 600 at room temperature. The leakage current increased as substrate temperature increased or as film thickness decreased.

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ZnO 박막의 RF 마그네트론 스퍼터 증착 중 미리 가열된 기판의 자연냉각 효과 (The Natural Cooling Effects of Pre-heated Substrate during RF Magnetron Sputter Deposition of ZnO)

  • 박성현;이능헌
    • 전기학회논문지
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    • 제56권5호
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    • pp.905-909
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    • 2007
  • Crystalline and micro-structural characteristics of ZnO thin films which were deposited on p-Si(100) with cooling naturally down of pre-heated substrate during RF magnetron sputter deposition, were investigated by XRD and SEM in this paper. The film which was prepared on the substrate which was pre-heated to $400^{\circ}C$ before deposition and then cooled naturally down during deposition, showed the most outstanding c-axis preferred orientation. The ZnO thin film having the best crystalline result were applied to SMR type FBAR device and resonance properties of the device were investigated by network analyzer. It showed that resonance frequency was 2.05 GHz, return loss was -30.64 dB, quality factor was 3169 and electromechanical coupling factor was 0.4 %. This deposition method would be very useful for application of surface acoustic wave filter or film bulk acoustic wave resonator.

Co-Cr(-Ta)/Si 이층막의 자기적 특성 (Magnetic properties of Co-Cr(-Ta)/Si bilayered thin film)

  • 김용진;박원효;금민종;손인환;최형욱;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.100-103
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    • 2001
  • In order to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. With the thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. It was revealed that by introducing the Si underlayer, the c-axis orientation of CoCr, CoCrTa magnetic layer was improved largely. However, with increasing Si film thickness, perpendicular coercivity and saturation magnetization of Cocr/si, CoCrTa/Si bilayered thin films was decreased. Grain size of bilayered thin films became larger.

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