• Journal of ILASS-Korea
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• v.1 no.2
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• pp.33-41
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• 1996

Mixture formation is one of the important factors to improve combustion performance of MPI gasoline engines. This is affected by spray and atomization characteristics of injector. Especially, in the case of EGI system, air-fuel mixing period is too short and formed a lot of fuel-film in the intake manifold and cylinder wall. This fuel-film is not burnt in cylinder, it is exhausted in the form of HC emission. In this paper, spray characteristics such as size distributions, SMD, and spray angle are measured by PMAS, and the fuel-film measuring device is developed specially. Using this device, the amount and distribution of fuel-film which flows into through valve can be measured Quantitatively. As the result of these experiments, the information of optimal spray characteristics and injection condition that minimize the fuel-film can be built up.

• Tribology and Lubricants
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• v.11 no.2
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• pp.34-43
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• 1995

The boundary films formed in sliding on steel surfaces were characterized using various lubricants. The mechanism of boundary film formation and loss was investigated over a range of temperature. The thickness of the boundary films was monitored in-situ by an ellipsometer, and the composition of the films was analyzed by XPS. The performance of the lubricants is closely associated with boundary film forming ability. In order to achieve high load carrying capacity, a boundary film must be formed on the surface. Sliding is necessary to form the films and some time is also required. As temperature increases, chemical reactivity increases the film formation rate, while the film removal rate increases due to thg decrease of durability of the boundary film material. There is a balance between these two competing mechanisms and this balance is reflected in the boundary film thickness.

• Carbon letters
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• v.6 no.2
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• pp.96-100
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• 2005

Taguchi methodology has been applied to get an idea about the parameters related to the chemical vapour deposition technique, which influences the formation of semiconducting carbon thin film of a desired band gap. L9 orthogonal array was used for this purpose. The analysis based on Taguchi methodology suggests that amongst the parameters selected, the temperature of pyrolysis significantly controls the magnitude of band gap (46%). Sintering time has a small influence (30%) on the band gap formation and other factors have almost no influence on the band gap formation. Moreover this analysis suggests that lower temperature of pyrolysis (${\leq}$ $750^{\circ}C$) and lower time of sintering (${\leq}$ 1 h) should be preferred to get carbon thin film with the desired band gap of 1.2eV.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1430-1431
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• 2006

We investigated the formation of 2-dimension hologram grating by means of selective etching characteristic and photo-expansion effect according to photo irradiation on amorphous As-Ge-Se-S thin film. By method of phase holography, we made the 2-dimensional hologram grating by each (S:P) and ($+45^{\circ}:-45^{\circ}$) polarized beam with DPSS laser(532nm) and He-Ne laser(632nm). A recording property was observed at each polarized beam through 2-dimensional hologram surface relief grating. Chalcogenide thin film was etched selectively by NaOH solution after the formation of 1-dimensional diffraction grating. And then etched sample was rotated 90 degree to fabricate 2 dimensional hologram grating. We found that it was observed the formation of 2-dimensional hologram grating by AFM(Atomic Force Microscopy).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.712-715
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• 2016

In this paper, we fabricated flexible CNT/PVDF piezoelectric composite device by introducing CNTs (carbon nanotubes) into PVDF (poly-vinylidene fluoride) solution using spray coating technique. Flexible PEDOT:PSS conducting polymer was used as electrodes. We tried to improve the piezoelectric performance from the CNT/PVDF composite film by increasing the portion of the ${\beta}$-phase PVDF in the film. We confirmed the structural conformation of the CNT/PVDF composite film as a function of CNT concentration by using FT-IR (fourier transform infra-red). As increasing CNT concentration, portion of the ${\beta}$-phase PVDF and resulting piezoelectric performance increased in the CNT/PVDF composite film. We found that CNTs introduced were played as seeds for formation of the ${\beta}$-phase PVDF in the CNT/PVDF composite film and resulting improvement of the piezoelectric performance.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.308-314
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• 2017

Anodic film formation behavior of AZ31 Mg alloy was studied as a function of NaOH concentration in 1 M $Na_2CO_3$ + 0.5 M $Na_2SiO_3$ solution under the application of a constant anodic current density, based on the analyses of voltage-time curves, surface appearances and morphologies of the anodically formed PEO (plasma electrolytic oxidation) films. The anodic film formation voltage and its fluctuations became largely lowered with increasing added NaOH concentration in the solution. Two different types of film defects, large size dark spots indented from the original surface and locally extruded white spots, were observed on the PEO-treated surface, depending on the concentration of added NaOH. The large size dark spots appeared only when added NaOH concentration is less than 0.2 M and they seem to result from the local detachments of porous PEO films. The white spots were observed to be very porous and locally extruded and their size became smaller with increasing added NaOH concentration. The white spot defects disappeared completely when more than 0.8 M NaOH is added in the solution. Concludingly it is suggested that the presence of enough concentration of $OH^-$ ions in the carbonate and silicate ion-containing electrolyte can prevent local thickening and/or detachment of the PEO films on the AZ31 Mg alloy surface and lower the PEO film formation voltage less than 70 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.223-223
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• 2012

Surface engineering plays a significant role in fabricating highly functionalized materials applicable to industrial and biomedical fields. Surface wrinkles and folds formed by ion beam or plasma treatment are buckling-induced patterns and controlled formation of those patterns has recently gained considerable attention as a way of creating well-defined surface topographies for a wide range of applications. Surface wrinkles and folds can be observed when a stiff thin layer attached to a compliant substrate undergoes compression and plasma treatment is one of the techniques that can form stiff thin layers on compliant polymeric substrates, such as poly (dimethylsiloxane) (PDMS). Here, we report two effective methods using plasma modification techniques for controlling the formation of surface wrinkles and folds on flat or patterned PDMS substrates. First, we show a method of creating wrinkled diamond-like carbon (DLC) film on grooved PDMS substrates. Grooved PDMS substrates fabricated by a molding method using a grooved master prepared by photolithography and a dry etching process were treated with argon plasma and subsequently coated with DLC film, which resulted in the formation of wrinkled DLC film aligning perpendicular to the steps of the pre-patterned ridges. The wavelength and the amplitude of the wrinkled DLC film exhibited variation in the submicron- to micron-scale range according to the duration of argon plasma pre-treatment. Second, we present a method for controlled formation of folds on flat PDMS substrates treated with oxygen plasma under large compressive strains. Flat PDMS substrates were strained uniaxially and then treated with oxygen plasma, resulting in the formation of surface wrinkles at smaller strain levels, which evolved into surface folds at larger strain levels. Our results demonstrate that we can control the formation and evolution of surface folds simply by controlling the pre-strain applied to the substrates and/or the duration of oxygen plasma treatment.

• Korean Journal of Materials Research
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• v.32 no.4
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• pp.230-236
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• 2022

The formation behavior of a passive state film on the surface of STS304 in electrolytic solution was analyzed to determine its metallic ion composition. The properties of passive state films vary depending on the Fe and Cr ions in the electrolytic solution. It was observed that the passive state film surface became flat and glossy as the concentration of Fe and Cr ions in the electrolytic solution increased. The corrosion resistance property of the passive state film was proportional to the amount of Fe and Cr in the electrolytic solution. An initial passive state film with high Fe concentration was formed on the surface of STS304 during early electrolytic polishing. Osmotic pressure of Fe ions occurs between the passive state film and electrolytic solution due to the Fe ion concentration gradient. The Fe in the passive state film is dissolved into the electrolyte, and Cr fills up the Fe ion vacancies. As a result, a good corrosion-resistant floating film was formed. The more Fe ions in the electrolytic solution, the faster the film is formed, and as a result, a flat passive state film containing a large amount of Cr can be formed.

• Journal of Sensor Science and Technology
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• v.14 no.2
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• pp.131-135
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• 2005

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown on Si(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputter and annealed with the vacuum and RTA (rapid thermal anneal) process respectively. Contact resistivities between the TiW film and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmission line model) method. The contact phases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope) and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at $1000^{\circ}C$ for 45 sec with the RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance is less than $4.62{\times}10^{-4}{\Omega}{\cdot}cm^{2}$. Moreover, the inter-diffusion at TiW/3C-SiC interface was not generated during before and after annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC using the TiW film is very suitable for high temperature MEMS applications.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.113-117
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• 1995

MOCVD of Cu films were carried out on gold-TiN(1000$\AA$)/Ti/Si wafers from hexafluoroacetylacetonate-Cu(l) vinyltrimethylsilane, Cu(l)(hafac)(vtms), in a small cold-wall type reactor. Effects of the substrate and bubbler temperatures on the film growth rate were studied, and a film with $\rho$=1.8$\pm$0.1$\mu$$\Omega$.cm could be deposited 150nm/min at Ts=200 and Tb=$30^{\circ}C$, respectively. The initial stage of the film formation was also investigated by in-situ laser reflectivity monitoring combined with SEM observations, based on which variations in the film properties depending on the growth conditions were discussed in terms of the nucleation rate and grain size.