• 문화기술의 융합
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• 제9권3호
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• pp.377-383
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• 2023

영화 <먼지 속으로 사라지다> 는 중국의 서북 지역 농촌 현실을 핍진하게 반영했다고 평가된다. 영화에서는 비록 농민 특유의 성실함과 순박한 사랑도 담았지만 많은 문제점도 제기하였다. 구체적으로 제기한 문제는 다음과 같다. 첫째, 결혼 시 자신의 의사를 제대로 피력하지 못하는 중국 농촌 청년들을 고발하였다. 이는 장기간 제대로 된 교육, 의료, 복지 혜택을 받지 못한 원인이 크다고 할 수 있다. 둘째, 현실과 괴리된 농촌 주택 정책을 비판하였다. 지역특성과 농민의 상황을 고려하지 않고 일방적으로 도시의 아파트를 제공해주는 것은 오히려 역효과가 날 수 있다고 경고하고 있다. 영화에서 주인공은 가족과 같이 생각하고 돌보는 가축 등을 버려두고 자신만 거주지를 아파트로 옮겨 생활하지 않는다. 셋째, 농촌에 만연된 물질만능주의를 비판하였다. 모든 것을 돈으로 해결하려고 하고 심지어 정부의 주택 보상금을 받기 위해서 인간을 존중하지 않는 현상을 비판하였다. 이러한 의미로 볼 때, 진정한 중국 삼농 문제의 해결을 위해서는 거시적으로 추진되는 정책과 일부 낙후된 농촌 지역도 아우를 수 있는 미시적인 정책도 함께 실시되어야 한다.

• 센서학회지
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• 제20권5호
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• pp.311-316
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• 2011

Monitoring the carbon dioxide concentration in arterial blood is vital for the evaluation and prevention of pulmonary disease. Yet, domestic pure arterial blood carbon dioxide sensor technologies are not being developed, instead all sensors are imported. In this paper, we develop a real time monitoring system for arterial blood partial pressure of carbon dioxide($pCO_2$) gas from the wrist by using a carbon micro-heater. The micro-heater was fabricated with a thickness of 0.3 ${\mu}m$ in order to collect the carbon dioxide under the skin. The micro-heater has been designed to perform temperature compensation in order to prevent damage to the skin. Two clinical trials of the system were undertaken. As a result, we demonstrated that a portable, transcutaneous carbon dioxide analysis($TcpCO_2$) device produced domestically is possible. In addition, this system reduced the analysis time significantly. Carbon films could reduce the unit price of these sensors by replacing the gold film used in foreign models. Also, we developed a real time monitoring system which can be used with optical biosensors for medical diagnostics as well as gas sensors for environmental monitoring.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.340-343
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• 2008

This work reports the simple fabrication of the single cell gap transflective liquid crystal display (LCD) using wire grid polarizer. The nano sized wire grid polarizer was patterned on common electrode itself, on the reflective part of FFS (Fringe field switching) mode whereas the common electrode was unpatterned at transmissive part. However, this structure didn't show single gamma curve, so we further improved the device by patterning the common electrode at transmissive part. As a result, V-T curve of proposed structure shows single gamma curve. Such a device structure is free from in-cell retarder, compensation film and reflector and furthermore it is very thin and easy to fabricate.

• 한국표면공학회지
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• 제29권6호
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• pp.735-738
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• 1996

Amorphous nickelphthalocyanine(NiPc) thin films were prepared by vacuum evaporation and their electrochromic behavior and voltammograms were examined in the five kinds of aqueous electrolytes. Amorphous NiPc films were prepared on indium-tin-oxide(ITO) glass substrates cooled to-$120^{\circ}C$ by using liquid nitrogen under a vacuum of $2.4 \times 10^{-4}$. The voltammetric and electrochromic measurements were made using a potential galvanostat. In order to confirm the color change, optical vis-transmission spectra of the NiPc films were measured by a spectrophotometer with various electrode potential applied. The NiPc amorphous thin films exhibited most clearly electrochromism in $KNO_3$ aqueous electrolyte. The specimen films underwent 3 color transitions (from blue to yellow-green, then to red violet, then to dark blue), corresponding to the three peaks on the voltammograms in $KNO_3$ aqueous electrolyte. Blue is color of the as-prepared film. When the potential was swept, charge compensation was attained upon oxidation by injection of anions from the electrolyte and upon reduction by expulsion of anions.

• 한국재료학회지
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• 제21권5호
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• pp.277-282
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• 2011

Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such as sensors and temperature compensation devices. NTC thermistor thick films of $Ni_{1+x}Mn_{2-x}O_{4+{\delta}}$ (x = 0.05, 0, -0.05) were fabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T) characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between $25^{\circ}C$ and $85^{\circ}C$ without heat treatment. When the film was annealed at $600^{\circ}C$ 1h, the resistivity of the film gradually decreased due to crystallization and grain growth. The resistivity and the activation energy of films annealed at $600^{\circ}C$ for 1 h were 5.203, 5.95, and 4.772 $K{\Omega}{\cdot}cm$ and 351, 326, and 299 meV for $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$, $NiMn_2O_4$, and $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$, respectively. The annealing process induced insulating $Mn_2O_3$ in the Ni deficient $Ni_{0.95}Mn_{2.05}O_{4+{\delta}}$ composition resulting in large resistivity and activation energy. Meanwhile, excess Ni in $Ni_{1.05}Mn_{1.95}O_{4+{\delta}}$ suppressed the abnormal grain growth and changed $Mn^{3+}$ to $Mn^{4+}$, giving lower resistivity and activation energy.

• The Korean Journal of Ceramics
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• 제1권2호
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• pp.91-95
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• 1995

Polycrystalline bismuth- and aluminum- substituted dysporsium and yttrium iron garnet (Bi2R3-xAlyFe5-yO12, R=Dy or Y, $0\leqx\leq3, \; 0\leqy\leq3$) films have been prepared by pyrolysis. The crystallization temperatures, the solubility limit of bismuth ions into the garnet phase, and magnetic and magneto-optic properties of the films have been investigated as a function of bismuth and aluminum concentration. It was found that the crystallization temperatures as a function of bismuth and aluminum concentration. It was found that the crystallization temperatures of these films rapidly decreased as bismuth concentration. It was found that the crystallization temperatures of these films rapidly decreased as bismuth concentration (x) increased up to x=1.5 and then remained temperatures of these films rapidly decreased as bismuth concentration (x) increased up to x=1.5 and then remained unchanged at x>1.5, whereas, showed no changes as aluminum concentration (y) increased up to y=1.0 and then gradually increased at y>1.0. The solubility limit of bismuth ions was x=1.8 when y=0 but increased to x=2.3 when y=1.0. It was demonstrated that the magnetic and magneto-optic properties of the dysprosium iron garnet films could be tailored by bismuth and aluminum substitution suitable for magneto-optic recording as follows. The saturation magnetization and coercivity data obtained for the films indicated that the film composition at which the magnetic compensation temperature became room temperature was y=1.2 when x=1.0. Near this composition the coercivity and the squareness of the magnetic hysteresis loop of the films were several kOe and unit, respectively. The Curie temperatures of the films increased with the increase of x but decreaed with the increase of y, and was 150-$250^{\circ}C$ when x=1.0 and y=0.6-1.4. The Faraday rotation at 633 nm of the films increased as x increased but decreased as y increased, and was 1 deg/$\mu\textrm{m}$ when x=1.0 and y=1.0. Based on the data obtained, the appropriate film composition for magneto-optic recording was estimated as near x=1.0 and y=1.0 or $BiDy_2AlFe_4O_{12}$.

• 센서학회지
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• 제7권3호
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• pp.171-178
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• 1998

SDB 웨이퍼를 이용하여 실리콘 압저항형 절대압센서를 제조하고 이를 가스누출 감지시스템에 응용하였다. 이 경우 센서는 $0{\sim}600\;mmH_{2}O$, $0{\sim}100^{\circ}C$의 압력, 온도범위에서 정상적으로 동작하여야 하고 다이아프램이 파괴되었을 때 가스가 소자 외부로 누출되어서는 안된다. 따라서 다이아프램 내의 공극을 유리(Pyrex7740)와 진공중($10^{-4}$ torr)에서 양극 접합을 행하였다. 제조된 센서는 압력에 대하여 우수한 선형특성을 보였고, 압력감도는 대기압이상 $0{\sim}600\;mmH_{2}O$의 압력범위에서 $4.06{\mu}V/VmmH_{2}O$ 이었다. 온도보상 일체화 조건을 조사하기 위해 Al 박막저항을 제조하여 온도보상을 행하였는데 오프셋의 온도 drift는 80 %이상, 감도의 온도의존성은 95 %이상 보강 효과를 얻었다. 또한 다이오드(PXIN4001)를 이용한 온도보상시 오프셋의 온도 drift는 98 %이상, 감도의 온도의존성은 90%이상 보상 효과를 나타내었다.

• 폴리머
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• 제37권6호
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• pp.744-752
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• 2013

배향된 상태에서 복굴절이 없는 zero-${\Delta}$n 재료를 개발할 목적으로 용융혼합된 폴리락타이드(PLLA, (+)복굴절)/폴리(메틸 메타크릴레이트)(PMMA, (-)복굴절) 블렌드의 상용성과 PMMA의 공단량체인 메틸 아크릴레이트(MA)가 PLLA와의 상용성에 미치는 영향을 살펴보았다. MA 함량에 상관없이 모든 블렌드에서 조성에 따라 변하는 단일 $T_g$와 90% 이상의 투명도가 관찰되었으며, 이로부터 용융혼합된 PLLA/PMMA 블렌드는 분자수준에서 상용성을 보임을 확인하였다. 이들 블렌드는 $280^{\circ}C$의 온도에서도 안정한 단일상을 유지하였다. MA가 17 mol%첨가된 PMMA17과 PLLA의 블렌드의 경우 Hoffman-Weeks 방법을 적용하여 평형융점으로부터 구한 상호작용 에너지 밀도(B)는 $-0.74J/cm^3$이었다. PLLA/PMMA 블렌드는 배향되었을 때 조성고분자들의 고유 배향복굴절이 상쇄되어 특정 혼합비에서 "0" 가까운 복굴절 특성을 나타내었다. PLLA/PMMA5 블렌드의 경우 혼합비에 따른 복굴절 분산을 측정한 결과 zero-${\Delta}$n 특성을 보이는 혼합비에서 역분산이 나타나며, 파장의존성이 없는 복굴절 특성을 보이는 조성이 존재함을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• 대한전자공학회논문지SD
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• 제49권7호
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• pp.1-9
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• 2012

기존의 LED 패키지가 갖는 온도에 따른 광 특성 변화 문제를 해결하기 위하여 온도센서가 집적된 LED 패키지 시스템을 제안하였다. 패키지의 온도를 실시간으로 측정하기 위하여 정확도가 우수하며 온도에 따른 저항의 변화가 선형적인 특징을 갖는 온도센서(RTD 형)를 설계하였으며, 장기간의 안정성을 보장하기 위하여 안정된 박막의 증착조건을 결정하고 이를 바탕으로 $1.560{\Omega}/^{\circ}C$의 민감도를 갖는 온도센서를 패키지 내부에 제작하였다. 제작된 패키지를 이용하여 온도에 무관하게 일정한 광량을 나타내는 시스템의 구현을 위하여 변환 회로부와 제어 회로부를 제작하고 이들을 결합함으로써, 패키지의 온도 변화에 따라 PWM duty ratio의 변화를 통해 광 출력을 보상해 주는 시스템을 제안하고 제작하였다. LED의 동작온도인 $0^{\circ}C$에서 $140^{\circ}C$ 범위에서 PWM duty ratio를 관측한 결과 제안했던 일정한 광량을 위한 PWM duty ratio에 매우 근접한 출력 신호를 발생시키는 것을 확인할 수 있었다.