• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.1
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• pp.88-92
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• 2023

The ferroelectricity in Hf_0.5Zr_0.5O₂ (HZO) thin films is one of the most interesting topics for next-generation nonvolatile memory applications. It is known that a crystallization process is required at a temperature of 400℃ or higher to form an orthorhombic phase that results in the ferroelectric properties of the HZO film. However, to realize the integration of ferroelectric HZO films in the back-end-of-line, it is necessary to reduce the annealing temperature below 400℃. This study aims to comprehensively analyze the ferroelectric properties according to the annealing temperature (350-500℃) and time (1-5 h) using a furnace as a crystallization method for HZO films. As a result, the ferroelectric behaviors of the HZO films were achieved at a temperature of 400℃ or higher regardless of the annealing time. At the annealing temperature of 350℃, the ferroelectric properties appeared only when the annealing time was sufficiently increased (4 h or more). Based on these results, it was experimentally confirmed that the optimization of the annealing temperature and time is very important for the ferroelectric phase crystallization of HZO films and the improvement of their ferroelectric properties.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.599-604
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• 1998

We have investigated Pt and $RuO_2$ as a bottom electrode for ferroelectric capacitor applications. The bottom electrodes were prepared by using an RF magnetron sputtering method. Some of the investigated parameters were a substrate temperature, gas flow rate, RF power for the film growth, and post annealing effect. The substrate temperature strongly influenced the surface morphology and resistivity of the bottom electrodes as well as the film crystallographic structure. XRD results on Pt films showed a mixed phase of (111) and (200) peak for the substrate temperature ranged from RT to $200^{\circ}C$, and a preferred (111) orientation for $300^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of $300^{\circ}C$ and RF power 80W for the Pt bottom electrode growth. With the variation of an oxygen partial pressure from 0 to 50%, we learned that only Ru metal was grown with 0~5% of $O_2$ gas, mixed phase of Ru and $RuO_2$ for $O_ 2$ partial pressure between 10~40%, and a pure $RuO_2$ phase with $O_2$ partial pressure of 50%. This result indicates that a double layer of $RuO_2/Ru$ can be grown in a process with the modulation of gas flow rate. Double layer structure is expected to reduce the fatigue problem while keeping a low electrical resistivity. As post anneal temperature was increased from RT to $700^{\circ}C$, the resistivity of Pt and $RuO_2$ was decreased linearly. This paper presents the optimized process conditions of the bottom electrodes for memory device applications.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.1
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• pp.29-37
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• 1999

In this study, we have prepared PLT thin films having various La concentrations by using sol-gel method and studied on the effect of La concentration on the electrical properties of PLT thin films. As the La concentration increases from 5mol% to 28mol%, the dielectric constant at 10kHz increases from 428 to 761, while the loss tangent decreases from 0.063 to 0.024. Also, the leakage current density at 150kV/cm has a tendency to decrease from 6.96${\mu}A/cm^2$ to 0.79${\mu}A/cm^2$. In the result of hysteresis loops of PLT thin films, the remanent polariation and the coercive field decrease from 9.55${\mu}C/cm^2$ to 1.10${\mu}C/cm^2$ and from 46.4kV/cm to 13.7kV/cm, respectively. With the result of the fatigue test on the PLT thin films, we have found that the fatigue properties are improved remarkably as the La concentration increases from 5 mol% to 28mol%. In particular, the PLT28) has paraelectric phase and its charge storage clensity and leakage current density at 5V are 134fC/${\mu}cm^2$ and 1.01${\mu}A/cm^2$, respectively. The remanent polarization and coercive field of the PLT(10) film are 6.96${\mu}C/cm^2$ and 40.2kV/cm, respectively. After applying of $10^9$ square pulses with ${\pm}5V$, the remanent polarilzation of the PLT(10) film decreases about 20% from the initial state. In the results, we conclude that the 10mol% and the 28mol% La doped PLT thin films are very suitable for the capacitor dielectrics of new generation of DRAM and NVFRAM respecitively.

• Applied Chemistry for Engineering
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• v.17 no.3
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• pp.243-249
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• 2006

Porous polymer gel electrolytes (PGEs) based on poly(vinylidenefluoride-co-hexafluoropropylene) (P(VdF-co-HFP)) as a polymer matrix and polyvinylpyrolidone (PVP) as a pore-forming agent were prepared and electrochemical properties were investigated for an electric double layer capacitor (EDLC) in order to increase a permeability of an electrolyte into the PGE. Propylene carbonate (PC) and ethylene carbonate (EC) as plasticizers, and tetraethylammonium tetrafluoroborate ($TEABF_4$) as a supporting salt for the PGE were used. EDLC unit cells were assembled with the PGE and electrode comprising BP-20 and MSP-20 as activated carbon powders, Super P as a conducting agent, and P(VdF-co-HFP)/PVP as a mixed binder. Ion conductivity of PGEs increased with an increased PVP content and was the best at 7 wt% PVP, whereas electrochemical characteristics such as AC-ESR of unit cell were better in 3 wt%. And electrochemical characteristics of the unit cell with PGE were the best at a 33 : 33 weight ratio of PC to EC. Specific capacitance of a mixed plasticizer system of PE and EC was higher than that of pure PC. Ion conductivity of PGEs with a film thickness of $20{\mu}m$ was higher, but electrochemical characteristics of unit cells were higher for a $50{\mu}m$ membrane thickness. Also, the unit cell has shown the highest capacitance of 31.41 F/g and more stable electrochemical performance when PGE and electrode were hot pressed. Consequently, the optimum composition ratio of PGE for EDLCs was 23 : 66 : 11 wt% such as P(VdF-co-HFP) : PVP = 20 : 3 wt% and PC : EC = 44 : 22 wt%. In this case, $3.17{\times}10^{-3}S/cm$ of ion conductivity was achieved at the $50{\mu}m$ thickness of PGE for EDLCs. And the electrochemical characteristics of unit cells were $2.69{\Omega}$ of DC-ESR, 28 F/g of specific capacitance, and 100% of coulombic efficiency.