• Korean Journal of Materials Research
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• v.1 no.4
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• pp.229-235
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• 1991

A new electrode material for $Ta_2O_5$ capacitor was developed to obtain both high dielectric constant and improved electrical properties for use in DRAM. High leakage current and low breakdown field of as-deposited $Ta_2O_5$ film on Si is due to the reduction of $Ta_2O_5$ by silicon at $Ta_2O_5$/electrode interface. $Dry-O_2$ anneal improves the electrical properties of $Ta_2O_5$ capacitor with Si electrode, but it thickens the interfacial oxide and lowers the dielectric constant, subsequently. $Ta_2O_5$ capacitor with TiN exectrode shows better electrical properties and higher dielectric constant than post heat treated $Ta_2O_5$ film on Si. No interfacial oxide layer at $Ta_2O_5$/TiN interface suggests that there\`s no Interaction between $Ta_2O_5$ and electrode. TiN is a adequate electrode material for $Ta_2O_5$ capacitor.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2005.09a
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• pp.201-212
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• 2005

[ $Epoxy/BaTiO_3$ ] composite embedded capacitor films (ECFs) were newly designed fur high dielectric constant and low tolerance (less than ${\pm}15\%$) embedded capacitor fabrication for organic substrates. In terms of material formulation, ECFs are composed of specially formulated epoxy resin and latent curing agent, and in terms of coating process, a comma roll coating method is used for uniform film thickness in large area. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ composite ECF is measured with MIM capacitor at 100 kHz using LCR meter. Dielectric constant of $BaTiO_3$ ECF is bigger than that of $SrTiO_3$ ECF, and it is due to difference of permittivity of $BaTiO_3\;and\;SrTiO_3$ particles. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ ECF in high frequency range $(0.5\~10GHz)$ is measured using cavity resonance method. In order to estimate dielectric constant, the reflection coefficient is measured with a network analyzer. Dielectric constant is calculated by observing the frequencies of the resonant cavity modes. About both powders, calculated dielectric constants in this frequency range are about 3/4 of the dielectric constants at 1 MHz. This difference is due to the decrease of the dielectric constant of epoxy matrix. For $BaTiO_3$ ECF, there is the dielectric relaxation at $5\~9GHz$. It is due to changing of polarization mode of $BaTiO_3$ powder. In the case of $SrTiO_3$ ECF, there is no relaxation up to 10GHz. Alternative material for embedded capacitor fabrication is $epoxy/BaTiO_3$ composite embedded capacitor paste (ECP). It uses similar materials formulation like ECF and a screen printing method for film coating. The screen printing method has the advantage of forming capacitor partially in desired part. But the screen printing makes surface irregularity during mask peel-off, Surface flatness is significantly improved by adding some additives and by applying pressure during curing. As a result, dielectric layer with improved thickness uniformity is successfully demonstrated. Using $epoxy/BaTiO_3$ composite ECP, dielectric constant of 63 and specific capacitance of 5.1nF/cm2 were achieved.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.9
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• pp.81-88
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• 2015

LED has been great attentions in lighting industry because of its long life-time, high efficiency, excellent light output characteristics. However, the life-time of the LED driving system is decreased because of the electrolytic capacitor which is used in the power conversion system for driving LED lighting. Therefore the capacitance reduction methods have been studied to replace an electrolytic capacitor with film or tantalum capacitor. This paper presents the Single stage PFC flyback converter with the simplified third harmonic current injection circuit to reduce output capacitance and the proposed system is theoretically analyzed and verified through the experiment.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1285_1286
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• 2009

본 논문에서는 지하철 인버터 회로에 사용 환경에 적합하면서 높은 과도 전압(dV/dt)에 견딜 수 있는 건식형 스너버용 커퍼시터를 설계 및 제작하여 특성을 검토하고자 한다. 필름 커패시터는 환경적 측면을 고려하여 에폭시 몰드형 건식형을 적용하였다. 증착 필름에 적용되는 금속은 Zn 전극에 비하여 Al 전극이 우수한 커패시터 특성을 나타내었으며 패턴의 경우에도 T-pattern에서 정전용량 및 손실의 변화율이 작게 나타났다. Al 금속전극에 wave-cut를 적용한 T - pattern 필름으로 DC 1650V, 12 uF, 정격전류 40 A의 커패시터를 제작하여 ESR 및 유전 손실이 적은 제품을 구현할 수 있으며 내구성 및 surge test 결과 신뢰성 규격을 만족하였다.

• Proceedings of the KIPE Conference
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• 2012.11a
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• pp.103-104
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• 2012

In the AC module system, mismatch problem between AC power and constant input power is occurred. To solve this problem, electrolytic capacitor is utilized for diminishing power pulsation in PV side. However, it has disadvantages of low life span and weak in temperature. Decoupling method has been studied to reduce the capacitance and replaces electrolytic capacitor to film capacitor. This paper proposes design method for decoupling circuit which bidirectional DC-DC converter using soft switching. Proposed system is verified by design optimization and simulation results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.33-34
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• 2008

Barium titanate (BaTiO3) is one of the most important dielectric materials for the electronic devices, such as MLCC (Multilayer Ceramic Capacitor). The thickness of the dielectric thin film in MLCC has become thinner and reached about 0.8 ${\mu}m$. Further down sizing is required for the higher performance. For this reason, we should take into account for the size effect of Barium titanate powders. In this study, we demonstrated that size effect for BaTiO3 (0.2 ~ 0.5 ${\mu}m$, hydrothermal BT) could be estimates by using dielectric properties analysis together with the powder properties.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1045-1048
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• 2003

In this paper, we studied plasma damage of MIS capacitor with $Al_2$O$_3$ dielectric film. Using capacitor pattern with the same area but different perimeters, we tried to separate etching damage mechanism and to optimize the dry etching process. After etching both metal and dielectric layer by the same condition, leakage current and C-V measurements were carried out for Pt/A1$_2$O$_3$/Si structures. The flatband voltage shift was appeared in the C-V plot, and it was caused by the variation of the fixed interface charge and the interface trapped charge. From I-V measurement, it was found the leakage current along the periphery could not be ignored. Finally, we established the process condition of RF power 300W, 100mTorr, Ar/Cl$_2$ gas 60sccm as an optimal etching condition.

• Journal of Electrical Engineering and Technology
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• v.7 no.3
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• pp.358-365
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• 2012

A new third harmonic injection circuit for light-emitting diode (LED) drivers is proposed to eliminate electrolytic capacitors and thereby extend the lifetime of LED drivers. When a third harmonic current is injected to the input current of the LED driver, the required capacitance of the driver can be reduced. The proposed circuit can control an injection ratio and has simple circuitry. The synchronous third harmonic is generated by a phase locked loop (PLL), a 1/3 counter, and op-amps and applied to a power factor correction circuit. Thus, the storage capacitor can install film capacitors instead of the electrolytic capacitor. The value of storage capacitance can be reduced to 78% compared to an input power factor of 100%. The proposed circuit is applied to the 80W prototype LED driver to experimentally verify the performances.

• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.486-487
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• 2012

In this paper, novel three-port active power decoupling (APD) method for applying 250[W] micro-inverter. This type using third port for active power decoupling stores the surplus energy and supplies sufficient energy to grid. Conventional decoupling circuit is applied in single phase grid connected micro-inverter especially single-stage configuration like flyback-type DC-AC inverter. In this passive power decoupling method, electrolytic capacitor with large capacitance is needed for decoupling from constant DC power and instantaneous AC power. However the decoupling capacitor is replaced with film capacitor by using APD, thus the overall system can achieve smaller size and long lifespan. Proposed three-port flyback inverter is verified by design and simulation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.3
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• pp.90-94
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• 2004

The variation of electrical properties of (Ba,Sr)$TiO_3$ [BST] thin films for Metal-Insulator-Semiconductor (MIS) capacitors was investigated. BST thin films were deposited on p-Si(100) substrates by the RF magnetron sputtering with temperature range of 500~$600^{\circ}C$. The dielectric properties of MIS capacitors consisting of AUBST/$SiO_2$/Si sandwich structure were measured for various conditions. We examined the characteristics of MIS capacitor with various oxygen pressure, substrate temperature and (Ba+Sr)/Ti ratio. It was found that the leakage current was reduced in MIS capacitor with high quality $SiO_2$ layer was grown on bare p-Si substrate by thermal oxidation. The BST MIS structure showed relatively high capacitance even though it is the combination of high-dielectric BST thin films and $SiO_2$ layer. The charge state densities of the MIS capacitors and Current-voltage characteristics of the MIS capacitor were investigated. By applying $SiO_2$ layer between BST thin films and Si substrate, low leakage current of $10^{-10}$ order was observed.