• Journal of information and communication convergence engineering
• /
• v.4 no.3
• /
• pp.108-110
• /
• 2006

Film bulk acoustic resonators for radio frequency wireless applications are presented. Various simulations and modeling were carried out. The impedance of a five-layered FBAR showed almost the same trend of the wideband characteristics as that of an ideal FBAR, but the characteristics of the higher modes appear to be much more suppressed. In addition, the wideband impedance decreased with increasing device size. The resonance characteristics depend strongly on the physical dimensions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.377-378
• /
• 2005

In this study, $SiO_2$ thin film was deposited on variable conditions of the RF power and working pressure by RF magnetron sputtering to apply to the Bragg reflector of the SMR type FBAR device. A crystal orientation and microstructure of $SiO_2$ thin film was studied by using the XRD, AFM and SEM. The best condition was obtained through analyzing the structural characteristics of thin film. Finally, FBAR device was fabricated with applying the best condition of $SiO_2$ thin film and the resonant characteristics was investigated by network analyzer to verify application possibility as a efficient device.

• Journal of information and communication convergence engineering
• /
• v.5 no.4
• /
• pp.316-319
• /
• 2007

This paper presents some methods to improve the resonance characteristics of film bulk acoustic-wave resonator (FBAR) devices. The FBAR devices were fabricated on multilayer Bragg reflectors (BR) into which very thin chromium (Cr) adhesion layers were inserted, followed by several kinds of thermal annealing processes. These methods resulted in an excellent device improvement in terms of return loss and Q-factors.

• Journal of information and communication convergence engineering
• /
• v.6 no.1
• /
• pp.34-37
• /
• 2008

Effects of the addition of Cr adhesion layer to $W/SiO_2$ multilayer Bragg reflectors on the resonance characteristics of film bulk acoustic wave resonator (FBAR) devices are presented. Main resonance peaks could be significantly shifted to higher frequency, mainly due to the addition of Cr adhesion layer to multilayer Bragg reflectors and control of the bottom electrode thickness as well. The FBAR devices with the Cr adhesion layer in Bragg reflectors could result in much more improved resonance characteristics at about 3 GHz in terms of return loss and Q-factor.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• v.9 no.2
• /
• pp.320-324
• /
• 2005

In this paper, the resonance characteristics of SMR-type FBAR devices annealed by three different annealing methods are investigated and compared. The resonance characteristics could be effectively improved by the proposed efficient annealing method which can optimize the annealing conditions. It seems very useful for improving the performance of the SMR-type FBAR devices in a cost-effective way.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.1865-1867
• /
• 2005

Film bulk acoustic resonator (FBAR) devices which adopt an air-gap type (metai/AlN/metal/air/substrate) configuration are fabricated by a novel process. The newly fabricated resonator doesn't employ any supporting layer below it. FBAR devices with the air-gap type are also fabricated using the conventional method. The frequency response characteristics of all the devices fabricated are measured and compared, in terms of the kinds of top and bottom electrode materials. The results show that the better device performance of FBAR devices can be achieved by employing the proposed process.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2007.10a
• /
• pp.204-207
• /
• 2007

Film bulk acoustic wave resonator (FBAR) technology has attracted a great attention as a promising technology to fabricate the next-generation RF filters mainly because the FBAR technology can be integrated with current Si processing. The RF filters are basically composed of several FBAR devices connected in parallel and in series, and their characteristics depend highly on the FBAR device characteristics. Thus, it is important to design high quality FBAR devices by device or process optimization. This kind of effort may enhance the FBAR device characteristics, eventually leading to FBAR filters of high performance. In this paper, we describe the methods to more effectively improve the resonance characteristics of the FBAR devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.688-692
• /
• 2004

In this paper, zinc oxide (ZnO) films with c-axis (002) orientation have been successfully deposited on the Al/Si substrate by rf magnetron sputtering method. The deposited films were characterized by substate temperature. Physical and structural properties of the deposited films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) measurement. Electrical Properties of the deposited films were investigated by 4-poing probe and LCR meter measurement. The optimal condition in this experimental result was found at foot of the substrate temperature and shown good film quality for FBAR application.

• Journal of information and communication convergence engineering
• /
• v.1 no.3
• /
• pp.129-132
• /
• 2003

In this paper, cobalt (Co)-electrode FBAR devices fabricated on seven-layered Bragg Reflectors are presented along with their resonance characteristics. ZnO films are used as the resonating material in FBAR devices where the Co electrode is 3000${\AA}$ thick. All processes are preformed in an RF magnetron sputtering system. As a result of characterization, the resonance characteristics are observed to depend strongly on the quality of ZnO film and Bragg Reflectors. In addition, the FBAR devices with W/$SiO_2$ reflectors show good resonance characteristics in term of return loss and quality-factor (Q-factor).

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.7 no.2
• /
• pp.255-262
• /
• 2003

In this paper, an investigation on the ZnO film deposition using radio-frequency magnetic sputtering techniques on aluminum bottom electrode for film bulk acoustic wave resonator (FBAR) filter applications and the temperature effects on the ZnO film growth is presented. The investigation on how much impact the actual process temperature may have on the crystal growth is more meaningful if it is considered that the piezoelectricity property of ZnO films plays a dominant role in determining the resonance characteristics of FBAR devices and the piezoelectricity is determined by the degree of the c-axis preferred orientation of the deposited ZnO films. In this experiment, it was found that the growth of ZnO crystals has a strong dependence on the deposition temperature ranged from room temperature to $350^{\circ}C$ regardless of the RF powers applied and there exist 3 temperature regions divided by 2 critical temperatures according to the degree of the c-axis preferred orientation. Overall, below $200^{\circ}C$, ZnO deposition results in columnar grains with a highly preferred c-axis orientation. With this ZnO film, a multilayered FBAR structure could be realized successfully.