• Journal of Korea Multimedia Society
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• v.19 no.3
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• pp.633-641
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• 2016

Automatic defect inspection system is composed of the step in the pre-processing, defect candidate detection, and classification. Polarizing films containing various defects should be minimized over-detection for classifying defect blobs. In this paper, we propose a defect detection algorithm using a skewness of histogram for minimizing over-detection. In order to detect up defects with similar to background pixel, we are used the characteristics of the local region. And the real defect pixels are distinguished from the noise using the probability density function. Experimental results demonstrated the minimized over-detection by utilizing the artificial images and real polarizing film images.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.101-102
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• 2006

PZT thin films, which are the representative ferroelectric materials in ferroelectric random access memory (FRAM), have some serious problem such as the imprint, retention and fatigue which ferroelectric properties are degraded by repetitive polarization. BL T thin film capacitors were fabricated by plasma etching, however, the plasma etching of BLT thin film was known to be very difficult. In our previous study, the ferroelectric materials such as PZT and BLT were patterned by chemical mechanical polishing (CMP) using damascene process to top electrode/ferroelectric material/bottom electrode. It is also possible to pattern the BLT thin film capacitors by CMP, however, the CMP damage was not considered in the experiments. The properties of BLT thin films were changed by the change of polishing pressure although the removal rate was directly proportional to the polishing pressure in CMP process.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.107-108
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• 2006

In this work, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. $Bi_{3.25}La_{0.75}Ti_{3}O_{12}$ (BLT) ferroelectric film was fabricated by the sol-gel method. However, there have been serious problems in CMP in terms of repeatability and defects in patterned wafer. Especially, dishing & erosion defects increase the resistance because they decrease the interconnect section area, and ultimately reduce the lifetime of the semiconductor. Cross-sections of the wafer before and after CMP were examined by Scanning electron microscope(SEM). Process characteristics of non-dishing and erosion were investigated.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.4
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• pp.568-573
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• 1996

The amorphous silicon films deposited by low pressure chemical vapor deposition are crystallized by the various annealing techniques including low-temperature furnace annealing and two-step annealing. Two-step annealing is the combination of furnace annealing at 600 [.deg. C] for 24 h and the sequential furnace annealing at 950 [.deg. C] 1h or the excimer laser annealing. It s found that two-step annealings reduce the in-grain defects significantly without changing the grain boundary structure. The performance of the poly-Si thin film transistors (TFTs) produced by employing the tow-step annealing has been improved significantly compared with those of one-step annealing. (author). 13 refs., 6 figs., 1 tab.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.302-302
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• 2011

The binary chalcogenide semiconductor Bi2Se3 is at the center of intensive research on a new state of matter known as topological insulators. It has Dirac point in their band structures with robust surface states that are protected against external perturbations by strong spin-orbit coupling with broken inversion symmetry. Such unique band configurations were confirmed by recent angle-resolved photoelectron emission spectroscopy experiments with an unwanted n-type doping effect, showing a Fermi level shift of about 0.3 eV caused by atomic defects such as Se vacancies. Since the number of defects can be reduced using the molecular beam epitaxy (MBE) method. We have prepared the Bi2Se3 film on noble metal Au(111) and semiconductor Si(111) substrates by MBE method. To characterize the film, we have introduced several surface sensitive techniques including x-ray photoemission electron spectroscopy (XPS) and micro Raman spectroscopy. Also, crystallinity of the film has been confirmed by x-ray diffraction (XRD). Using home-built scanning tunneling microscope, we observed the atomic structure of quintuple layered Bi2Se3 film on Au(111).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.173-176
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• 2011

The characteristic changes in ZnO thin film according to H- and O- plasma treatments have been studied by Photoluminescence (PL) spectroscopy at room temperature. The red shift of UV peak by 20-30 meV in PL spectra after plasma treatments is identified, which indicates that there are changes in the binding energy of bound exciton and/or the movement of energy levels of lattice defects and impurities. The width of UV peak is decreased after plasma treatments, which is believed to be closely related to the crystal quality of ZnO film. The increase of UV peak intensity after H-plasma treatment is also observed, and this could mean that the radiative recombination is strengthened because the hydrogen atoms in the plasma diffuse into the film where they passivate and neutralize the defects and the impurities.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.6
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• pp.915-919
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• 2012

In constructing all kinds of equipment and steel structure, parts with discontinuities such as weld defects formed in the welded structure can generate fatigue cracks that results in damage or accidents. In this study, weld zones are investigated with X-rays and the latent images are put on film. Weld zone defects can be verified by developing the film. As weld defects are investigated by radiographic testing and correlated with the welding condition, more appropriate welding conditions can be found. According to the result of X-ray radiographic inspection of butt welding ATOS 80 high-strength steel with a thickness of 12mm, the best conditions for welding without creating weld defects are 4 weld-passes, a protective gas of 20% $CO_2$ and 80% Ar, a protective gas flow of 20L/min, a welding current of 200A, an arc voltage of 24V, a welding speed of 14.4cm/min, a welding rod angle of $50^{\circ}$, a welding gap of 5 mm with a ceramic base, and sand pre-heating to $160^{\circ}$ Celsius prior to welding.

• Imaging Science in Dentistry
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• v.33 no.2
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• pp.71-77
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• 2003

Purpose : To evaluate and compare the efficacy of digital radiographic images in the detection of bone loss at the bifurcation area of the mandibular first molar with traditional film-based periapical radiographs, Materials and Methods : One dried human mandible with minimal periodontal bone loss around the first molar was selected and an artificial alveolar bone defect at the bifurcation area was serially prepared over 18 steps. Images were taken using a direct CCD-based system and with F-speed periapical films. The images were evaluated by seven interpreters (3 radiologists, 3 periodontologists, and 1 general dentist) using a 5-point confidence rating scale. Results : The readability of both periapical radiographs and digital image increased as the size of the artificial lesion and exposure time increased (p < 0.05). Periapical radiographs offered greater readability of smaller bone defects than digital images, and the coefficient of variation of mean score between periapical radiographs and digital images showed a significant difference. Conclusion : The experimental results indicate that a significant difference in the coefficient of variation of mean score exists between periapical radiographs and digital images, and that traditional film-based periapical images offer greater readability of smaller bone defects than digital images can presently offer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.732-736
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• 2009

Protons are irradiated into SOl wafers under total dose of 100 krad, 500 krad, 1 Mrad and 2 Mrad to analyze the irradiation effect. The electrical properties are analyzed by pseudo MOSFET technology after proton irradiation. The wafers are annealed to stabilize generated defects in a nitrogen atmosphere at $300^{\circ}C$ for 1 hour because proton irradiation induces a lot of unstable defects in the surface silicon film. Both negative and positive turn-on voltages are shifted to negative direction after the irradiation. The more proton total dose, the more turn on voltage shifts. It means that positive oxide trap charge is generated in the buried oxide(BOX). The minority carrier lifetime which is analyzed by the drain current transient characteristics decreases with the increase of proton total dose. The proton irradiation makes crystal defects in the silicon film, and consequently, the crystal defects reduce the carrier lifetime and mobility. As these results, it can be concluded that pseudo MOSFET is a useful technology for the analysis of irradiated SOI wafer.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.10
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• pp.112-118
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• 2021

In this study, an inspection method using a color image is proposed to conduct a real-time inspection of covalent organic framework (COF) films to detect defects, if any. The COF film consists of an upper pattern SR and a lower PI. The proposed system detects the defects of more than 20 ㎛ on the SR surface owing to the characteristics of the pattern, whereas on the PI surface, it detects defects of more than 4 ㎛ by utilizing a micro-optical system. In the existing system, it is difficult for the operator to conduct a full inspection through a high-performance microscope. The proposed inspection algorithm performs the inspection by separating each color component using the color contrast of the pattern on the SR side, and on the PI surface it inspects the bonding state of the mounted chip. As a result, it is possible to confirm the exact location of the defects through the SR and PI surface inspections in the implemented inspection.