• 한국표면공학회지
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• 제46권4호
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• pp.153-157
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• 2013

The defect like the void or seam is frequently generated in the PCB (Printed Circuit Board) Via-Filling plating inside via hole. The organic additives including the accelerating agent, inhibitor, leveler, and etc. are needed for the copper Via-Filling plating without this defect for the plating bath. However, the decomposition of the organic additive reduces the lifetime of the plating bath during the plating process, or it becomes the factor reducing the reliability of the Via-Filling. In this paper, the interaction of each organic additives and the decomposition of additive were discussed. As to the accelerating agent, the bis (3-sulfopropyl) disulfide (SPS) and leveler the Janus Green B (JGB) and inhibitor used the polyethlylene glycol 8000 (PEG). The research on the interaction of the organic additives and decomposition implemented in the galvanostat method. The additive decomposition time was confirmed in the plating process from 0 Ah/l (AmpereHour/ liter) to 100 Ah/l with the potential change.

• 마이크로전자및패키징학회지
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• 제13권4호
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• pp.45-50
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• 2006

3D package의 SiP에서 구리의 via filling은 매우 중요한 사항으로 package밀도가 높아짐에 따라 via의 크기가 줄어들며 전기도금법을 이용한 via filling이 연구되어왔다. Via filling시 via 내부에 결함이 발생하기 쉬운데 전해액 내에 억제제, 가속제등 첨가제를 첨가하고 펄스-역펄스(PRC)의 전류파형을 인가하여 결함이 없는 via의 filling이 가능하다. 본 연구에서는 건식 식각 방법 중 하나인 DRIE법을 이용하여 깊이 $100{\sim}190\;{\mu}m$, 직경이 각각 $50{\mu}m,\;20{\mu}m$인 2가지 형태의 via을 형성하였다. DRIE로 via가 형성된 Si wafer위에 IMP System으로 Cu의 Si으로 확산을 막기 위한 Ta층과 전해도금의 씨앗층인 Cu층을 형성하였다. Via시편은 직류, 펄스-역펄스의 전류 파형과 억제제, 가속제, 억제제의 첨가제를 모두 사용하여 filling을 시도하였고, 공정 후 via의 단면을 경면 가공하여 SEM으로 관찰하였다.

• 대한소아치과학회지
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• 제36권1호
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• pp.20-29
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• 2009

본 연구는 광중합 충전 재료의 적층 방법에 따른 중합수축 양상을 스트레인 게이지를 이용하여 측정하고, 이를 응력으로 환산하여 치면에 미치는 영향을 평가하였다. 발거된 영구치 70개의 치경부에 가로 3 mm, 세로 3 mm, 높이 1.5 mm의 와동을 형성하고, 일회 충전, 수평 적층법, 사면적층법으로 나누어 수복 재료를 충전하였다. Plasma arc lamp(PAL)를 사용한 고출력 광중합기를 광원으로 사용하였으며, 수복 재료는 Filtek $Z-250^{(R)}$ 복합레진, $Dyract^{(R)}$ AP 컴포머 그리고 $Tetric^{(R)}$ Flow 유동성 복합레진을 사용하였다. 중합과정동안 스트레인 게이지를 이용하여 치면에 발생된 스트레인을 측정하였고, 이를 응력으로 환산하여 다음과 같은 결론을 얻었다. 1. Strain 값은 광중합 개시와 함께 급격히 증가하였으며, 시간이 지남에 따라 서서히 감소하는 양상을 보여 주었다. 2. $Z-250^{(R)}$의 수축응력이 $Dyract^{(R)}$ AP와 $Tetric^{(R)}$ Flow에 비해 상대적으로 높게 나타났으나 통계학적 유의차는 없었다(p>0.05). 3. $Z-250^{(R)}$과 $Dyract^{(R)}$ AP에서 3가지 와동 충전 방법 간에는 수축응력의 차이가 없었다(p>0.05). 4. 와동 충전 방법에 따른 충전 재료 간에도 수축응력의 유의차는 없었다(p>0.05). 이상의 결과를 종합해보면 $Dyract^{(R)}$ AP는 광중합 과정과 자가 중합 과정이 함께 일어남으로 인해 $Z-250^{(R)}$보다 상대적으로 중합 수축이 적게 나타난 것으로 판단되었다. $Tetric^{(R)}$ Flow는 한 번에 충전을 완료할 수가 있어 시간 소모가 적고 치질에 대한 중합수축력도 적어 유치 와동 충전 시 유용한 충전 방법이라고 판단되었다. 향후 와동 충전 방법의 방향과 광중합 시간 간격이 광중합수축에 미치는 영향 등에 대한 추가 연구가 필요하다고 사료되었다.

• Restorative Dentistry and Endodontics
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• 제24권1호
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• pp.76-87
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• 1999

The effect of retrograde root-end filling materials(IRM, Super-EBA, Vitremer, MTA) on human periodontal ligament fibroblasts and osteoblasts was observed. The cell activities were evaluated by MTT assay, protein assay and alkaline phosphatase activity examination. The results as follows ; 1. After 24hrs culture, both E1 cells & PDL fibroblast adding root-end filling materials were suppressed cell activities but after 48hrs, cell activities were recovered. 2. Cell activity was lowest in Vitremer followed by IRM, MTA, Super-EBA. 3. Cell activity depression by Vitremer was not concerned with pH changes. 4. Protein synthesis by root-end filling materials were not significant difference in Both E1 cell & PDL fibroblasts but protein synthesis were a little increased by Super-EBA. 5. Alkaline phosphatase activity was increased in E1 cell by Super-EBA & MTA but was not significant differences in E1 cell by IRM & Vitremer. Alkaline phosphatase activity was a little depressed in PDL fibroblast by Vitremer. This findings suggest that these root-end filling materials may have important roles in promotion of PDL healing and consequently may be useful for clinical application in apical surgery.

• 치과방사선
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• 제24권1호
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• pp.59-66
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• 1994

The radiopacity of six composite resins, three resin luting cements and ten filling materials were studied. The purpose was to obtain an indication of radiopacity value of different brands within each of these groups of materials and to show differences in radiopacities of filling materials and natural tooth structures. On radiographs, the optimal densities of standardized samples were determined by computer imaging system and radiopacity values of the materials were expressed in millimeter equivalent aluminum. Within the groups of materials studied, there was considerable variation in radiopacity. The composite resins of P-50, Z100 and Prisma AP.H displayed much higher radiopacities than aluminum. Panavia resin cement was shown to be similarly radiopaque to aluminum. Generally, the radiopacity of base and filling materials appeared to be higher than that of the enamel and dentin. If materials with substantial difference in radiopacity are used in combined applications for restorative treatment of teeth, lower radiopacity can interfere with the diagnosis and detection of gaps near the restoration.

• 마이크로전자및패키징학회지
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• 제21권4호
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• pp.91-96
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• 2014

TSV기술은 실리콘 칩에 관통 홀(through silicon via)을 형성하고, 비아 내부에 전도성 금속으로 채워 수직으로 쌓아 올려 칩의 집적도를 향상시키는 3차원 패키징 기술로서, 와이어 본딩(wire bonding)방식으로 접속하는 기존의 방식에 비해 배선의 거리를 크게 단축시킬 수 있다. 이를 통해 빠른 처리 속도, 낮은 소비전력, 높은 소자밀도를 얻을 수 있다. 본 연구에서는 웨이퍼 레벨에서의 TSV 충전 경향을 조사하기 위하여, 실리콘의 칩 레벨에서부터 4" 웨이퍼까지 전해 도금법을 이용하여 Cu를 충전하였다. Cu 충전을 위한 도금액은 CuSO4 5H2O, H2SO4 와 소량의 첨가제로 구성하였다. 양극은 Pt를 사용하였으며, 음극은 $0.5{\times}0.5 cm^2{\sim}5{\times}5cm^2$ 실리콘 칩과 4" 실리콘 wafer를 사용하였다. 실험 결과, $0.5{\times}0.5cm^2$ 실리콘 칩을 이용하여 양극과 음극과의 거리에 따라 충전률을 비교하여 전극간 거리가 4 cm일 때 충전률이 가장 양호하였다. $5{\times}5cm^2$ 실리콘 칩의 경우, 전류 공급위치로부터 0~0.5 cm 거리에 위치한 TSV의 경우 100%의 Cu충전률을 보였고, 4.5~5 cm 거리에 위치한 TSV의 경우 충전률이 약 95%로 비아의 입구 부분이 완전히 충전되지 않는 경향을 보였다. 전극에서 멀리 떨어져있는 TSV에서 Cu 충전률이 감소하였으며, 안정된 충전을 위하여 전류를 인가하는 시간을 2 hrs에서 2.5 hrs로 증가시켜 4" 웨이퍼에서 양호한 TSV 충전을 할 수 있었다.

• Journal of Welding and Joining
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• 제32권3호
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• pp.19-26
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• 2014

Through Silicon Via (TSV) technology is the shortest interconnection technology which is compared with conventional wire bonding interconnection technology. Recently, this technology has been also noticed for the miniaturization of electronic devices, multi-functional and high performance. The short interconnection length of TSV achieve can implement a high density and power efficiency. Among the TSV technology, TSV filling process is important technology because the cost of TSV technology is depended on the filling process time and reliability. Various filling methods have been developed like as Cu electroplating method, molten solder insert method and Ti/W deposition method. In this paper, various TSV filling methods were introduced and each filling materials were discussed.

• 한국재료학회지
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• 제26권8호
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• pp.427-429
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• 2016

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.

• 한국주조공학회지
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• 제36권5호
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• pp.153-158
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• 2016

The lost foam casting process was used to fabricate Al-Si-Mg cast specimens, and the effects of the chemical composition and process variables on the tensile properties and the mold filling ability were investigated. Some porosity formation was observed in thick sections of the casting and better tensile properties were obtained for thin sections, presumably because of their lower porosity and the higher cooling rate. Tensile properties were not clearly enhanced by grain refining treatment with Ti; however, the elongation was significantly improved by Sr modification of the Al-Si-Mg alloy. The mold filling distance was generally proportional to the pouring temperature of the melt, and the distance was also increased by the addition of Ti.

• 보존과학회지
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• 제37권1호
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• pp.55-62
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• 2021

This study investigated mechanical property changes by measuring compression factors, resilience, and compressive strength according to packaging pattern and filling rate to identify the applicability of cultural heritage packaging using thermoplastic polyurethane elastomers (TPU). Research results indicate that the cross-shaped 3D pattern showed the best resilience when the internal filling rate was 20%, while the octet pattern was the best when the filling rate was either 40 and 60%. The octet pattern had the best mechanical properties and stability with resistance capacities of 20.79 kgf/cm², 40.40 kgf/cm², and 82.23 kgf/cm² at 38%, 39%, and 40% recovery speeds, respectively, depending on the internal filling rate (20, 40, 60%). Based on these results, basic data on the applicability, stability, and reliability of 3D cultural heritage packaging materials using TPU materials were obtained.