• 지질공학
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• 제2권1호
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• pp.19-35
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• 1992

화강편마암을 지반으로 하는 지역의 Fill Dam 코어기초에 3-12m 폭의 단층대와 40여m 폭의 단층파쇄대가 신선한 암반사이에 분포하며, 이들 각각의 암반의 탄성특성은 현저한 차이를 보인다. 평판재하시험 및 시추공내 변형시험 등의 현장 원위치 시험결가 신선한 암반의 변형계수는 $42,000~168,000kg/\textrm{cm}^2$의 범위를 보이나 단층대의 변형계수는 $963~2,204kg/\textrm{cm}^2$, 파쇄대에서는 $1,238~2,098kg/\textrm{cm}^2$의 범위를 나타낸다. 이와 같이 큰 차이의 변형계수값을 갖는 단층대 및 단층파쇄대와 신선한 암반 사이에는 댐 성토 후 부등침하가 예상된다. 따라서 이에 대한 보강을 위하여 증분식 유한요소 프로그램인 FEADAM 84를 이용한 지반과 보강에 따른 변위 등을 검토하였다. 이때 구성된 유한요소망은 지표조사 및 시추조사에서 확인된 불연속면이 기하학적 분포특성을 고려하였다. 유한요소 해석을 통하여 계산된 단층대와 신선한 암반 사이의 보강 전 부등침하량은 약 6cm에 달하며, 콘크리트 치환 보강 후에는 0.5cm 이내로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.311-312
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• 2010

The fabricated photovoltaic cells based on PIN heterojunctions, in this study, have a structure of ITO/poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS)/donor/donor:C60(10nm)/C60(35nm)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline(8nm)/Al(100nm). The thicknesses of an active layer(donor:C60), an electron transport layer(C60), and hole/exciton blocking layer(BCP) were fixed in the organic photovoltaic cells. We investigated the performance characteristics of the PIN organic photovoltaic cells with copper phthalocyanine(CuPc), tetracene and pentacene as a hole transport layer. Discussion on the photovoltaic cells with CuPc, tetracene and pentacene as a hole transport layer is focussed on the dependency of the power conversion efficiency on the deposition rate and thickness of hole transport layer. The device performance characteristics are elucidated from open-circuit-voltage(Voc), short-circuit-current(Jsc), fill factor(FF), and power conversion efficiency($\eta$). As the deposition rate of donor is reduced, the power conversion efficiency is enhanced by increased short-circuit-current(Jsc). The CuPc-based PIN photovoltaic cell has the limited dependency of power conversion efficiency on the thickness of hole transport layer because of relatively short exciton diffusion length. The photovoltaic cell using tetracene as a hole transport layer, which has relatively long diffusion length, has low efficiency. The maximum power conversion efficiencies of CuPc, tetracene, and pentacene-based photovoltaic cells with optimized deposition rate and thickness of hole transport layer have been achieved to 1.63%, 1.33% and 2.15%, respectively. The photovoltaic cell using pentacene as a hole transport layer showed the highest efficiency because of dramatically enhanced Jsc due to long diffusion length and strong thickness dependence.

• Journal of Electrical Engineering and Technology
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• 제11권4호
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• pp.1003-1011
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• 2016

In this paper, a new algorithm by using 3D warping technique to effectively fill holes that are produced when creating a virtual-viewpoint image is proposed. A hole is defined as the region that cannot be seen in the reference view when a virtual view is created. In the proposed algorithm, to reduce the blurring effect that occurs on the hole region filled by conventional algorithms and to enhance the texture quality of the generated virtual view, Exemplar Based In-painting algorithm is used. The boundary noise which occurs in the initial virtual view obtained by 3D warping is also removed. After 3D warping, we estimate the relative location of the background to the holes and then pixels adjacent to the background are filled in priority to get better result by not using only adjacent object's information. Also, the temporal inconsistency between frames can be reduced by expanding the search region up to the previous frame when searching for most similar patch. The superiority of the proposed algorithm compared to the existing algorithms can be shown through the experimental results.

• 한국컴퓨터정보학회논문지
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• 제17권7호
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• pp.53-65
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• 2012

기존의 Stereoscopy영상의 생성 방법은 2개의 촬영용 렌즈를 일정한 간격으로 띄워놓고 같은 피사체를 촬영하여 좌우 시점의 영상을 생성하는 방법을 이용하게 된다. 하지만 Stereoscopy 카메라를 이용한 3차원 TV 수신의 경우에 좌시점과 우시점에 대한 2개의 영상을 모두 동시에 전송해야 하기 때문에 대역폭의 부담이 크다. 이에 보다 효율적인 여러 방법들에 대한 논의가 이루어지고 있다. 그중 DIBR(Depth Image Based Rendering)은 한장의 영상과 이에 대한 Depth정보를 이용하여 좌시점과 우시점의 영상을 생성하기 때문에 전송 대역폭을 줄일 수 있으며, 이러한 점으로 인하여 기존의 Static Scene에서 DIBR Image 생성에 대한 다양한 Algorithm이 연구되어 왔다. 본 논문에서는 반전된 Depth 영상을 이용하여 자연스럽게 Hole을 채움과 동시에 주변 배경의 왜곡 또한 최소화하는 Gaussian Hole-Filling 방법을 제안하려 한다. 또한 각 Algorithm들의 성능을 비교, 계산하여 각 Algorithm들의 효용성을 분석하였다.

• 센서학회지
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• 제22권2호
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• pp.130-135
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• 2013

This study proposed a noble process to fabricate TSV (Through Silicon Via) structure which has lower cost, shorter production time, and more simple fabrication process than plating method. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process. The via hole was $100{\mu}m$ in diameter and $400{\mu}m$ in depth. A dielectric layer of $SiO_2$ was formed by thermal oxidation on the front side wafer and via hole side wall. An adhesion layer of Ti and a seed layer of Au were deposited. Soldering process was applied to fill the via holes with solder paste and metal powder. When the solder paste was used as via hole metal line, sintering state and electrical properties were excellent. However, electrical connection was poor due to occurrence of many voids. In the case of metal powder, voids were reduced but sintering state and electrical properties were bad. We tried the via hole filling process by using mixing solder paste and metal powder. As a consequence, it was confirmed that mixing rate of solder paste (4) : metal powder (3) was excellent electrical characteristics.

• 한국정밀공학회지
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• 제22권3호
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• pp.107-114
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• 2005

A new approach which combines implicit surface scheme and point projection method is presented in order to fill the arbitrarily shaped holes in the polygon model. In the method a trimmed surface which has an outer boundary curve is generated by using the implicit surface scheme and normal projection of point onto the base surface. The base surface is constructed by creating smooth implicit surface from the incomplete polygon model through which the surface should pass. In this paper an implicit surface is defined by a radial basis function, a continuous scalar-valued function over the domain $R^3$. The base surface is the set of all points at which this scalar function takes on the value zero and is created by placing zero-valued constraints at the vertices of the polygon model. In order to show the validity of the present study, various hole fillings are carried out for the complex polygon model of arbitrary topology.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2003년도 The 8th Asian Symposium on Precision Forging ASPF
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• pp.67-72
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• 2003

The cold precision forging of spur gears has been researched, and the effects of relief-hole shape and forging process on the spur gears forming has been analyzed. The results present that the forging load decreases when a suitability diameter of relief-hole is chosen, but the function is not obvious. The spur gears precision forging method with an adjustable movement of concave mould can benefit both the top and the bottom comers forming of the spur gears, full fill the tooth cavity, and decrease the forging load.

• 스마트미디어저널
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• 제3권4호
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• pp.28-34
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• 2014

최근 깊이 영상 기반 합성 방법을 이용한 가상시점 합성 방법이 3차원 영상의 적용 분야에서 많이 사용되고 있다. 가상 시점 영상은 기존에 알고 있는 영상과 이와 관련된 깊이 영상 정보를 이용하여 카메라로 촬영 하지 않은 가상시점 영상을 생성하게 된다. 하지만 깊이 영상 기반 합성 방법을 이용해 가상시점 영상을 생성할 경우, 깊이 영상을 기반으로 합성하기 때문에 이미지 워핑 과정에서 폐색 영역이 발생하게 된다. 이러한 폐색 영역을 제거하기 위해 지금까지 다양한 홀 채움 방법들이 제안되어 왔다. 동일 색상영역 검색, 수평방향 보간 방법, 수평방향 보외 방법 그리고 다양한 인페인팅 방법들이 홀 채움 방법들로 제안되었다. 하지만 이러한 방법들을 사용하여 텍스쳐 영역의 홀을 제거할 경우 다른 종류의 간섭 현상이 발생하는 문제가 있다. 본 논문에서는 이러한 문제점을 해결하기 위해 다양한 방향성을 고려한 홀 채움 방법을 새롭게 제안하여 확장된 홀 영역을 효율적으로 채우는 방법을 설명한다. 제안된 방법들은 복잡한 텍스쳐들이 있는 배경부분에서 발생하는 홀 영역을 채울 때 성능 효율성을 나타낸다. 방향성을 고려한 홀 채움 방법은 픽셀 단위로 홀 채움 영역 값을 측정하는 과정에서 홀 영역의 주변 텍스쳐 픽셀 값들을 사용하게 된다. 제안한 방법을 이용해 가상시점 영상 합성 결과 발생하는 홀 영역을 기존의 홀 채움 방법보다 보다 더 효율적으로 채울 수 있는 것을 확인할 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제33권2호
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• pp.670-674
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• 2012

The photovoltaic performance of solid-state dye-sensitized solar cells employing hole transport material (HTM), 2,2',7,7'-tetrakis-(N,N-di-p-methoxyphenyl-amine)-9,9'-spirobifluorene (spiro-MeOTAD), has been investigated in terms of HTM overlayer thickness. Two important parameters, soak time and spin-coating rate, are varied to control the HTM thickness. Decrease in the period of loading the spiro-MeOTAD solution on $TiO_2$ layer (soak time) leads to decrease in the HTM overlayer thickness, whereas decrease in spin-coating rate increases the HTM overlayer thickness. Photocurrent density and fill factor increase with decreasing the overlayer thickness, whereas open-circuit voltage remains almost unchanged. The improved photocurrent density is mainly ascribed to the enhanced charge transport rate, associated with the improved charge collection efficiency. Among the studied HTM overlayer thicknesses, ca. 230 nm-thick HTM overlayer demonstrates best efficiency of 4.5% at AM 1.5G one sun light intensity.

• Journal of Welding and Joining
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• 제32권3호
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• pp.11-18
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• 2014

TSV(through silicon via) filling technology is making a hole in Si wafer and electrically connecting technique between front and back of Si die by filling with conductive metal. This technology allows that a three-dimensionally connected Si die can make without a large number of wire-bonding. These TSV technologies require various engineering skills such as forming a via hole, forming a functional thin film, filling a conductive metal, polishing a wafer, chip stacking and TSV reliability analysis. This paper addresses the TSV filling using Cu electrodeposition. The impact of plating conditions with additives and current density on electrodeposition will be considered. There are additives such as accelerator, inhibitor, leveler, etc. suitably controlling the amount of the additive is important. Also, in order to fill conductive material in whole TSV hole, current wave forms such as PR(pulse reverse), PPR(periodic pulse reverse) are used. This study about semiconductor packaging will be able to contribute to the commercialization of 3D TSV technology.