• 제목/요약/키워드: Field emission device

검색결과 178건 처리시간 0.02초

Characterization of Lateral Type Field Emitters with Carbon-Based Surface Layer

  • Lee, Myoung-Bok;Lee, Jae-Hoon;Kwon, Ki-Rock;Lee, Hyung-Ju;Hahm, Sung-Ho;Lee, Jong-Hyun;Lee, Jung-Hee;Choi, Kyu-Man
    • Journal of Information Display
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    • 제2권3호
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    • pp.60-65
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    • 2001
  • Lateral type poly-silicon field emitters were fabricated by utilizing the LOCOS (Local Oxidation of Silicon) process. For the implementation 'of an ideal field emission device with quasi-zero tunneling barrier, a new and fundamental approach has used conducted by introducing an intelligent carbon-based thin layer on the cathode tip surface via a field-assisted self-aligning of carbon (FASAC) process. Fundamental lowering of the turn-on field for the electron emission was feasible through the control of both the tip shape and surface barrier height.

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Thin Oxide 불량에 미치는 Czochralski Si 웨이퍼의 미소결함의 영향 (The Effect of the Microdefects in Czoscralski Si wafer on Thin Oxide Failures)

  • 박진성;이우선;김갑식;문종하;이은구
    • 한국세라믹학회지
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    • 제34권7호
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    • pp.699-702
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    • 1997
  • The cross sectional image of thin oxide failure of MOS device could be observed by Emission Microscope and Focused Ion Beam at the weak point. The oxide failures in low electric field was associated with the presence of a particle or abnormal pattern. The failures occuring at medium field are related to a pit of Si substrate. The pits could be originated from the microdefects of Cz Si wafer.

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평판형 산란체에 대한 전류분포해석 (Analysis of the current distributions on the planar objects)

  • 오재현;오세준;안창회
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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    • pp.136-137
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    • 2007
  • The emission of external incident field or near device field is important factor of EMI and EMC. In this paper, we apply MOM, using the RWG basis function, to analysis the induced current distribution on the PEC and dielectric plates. The volume and surface integral equations are presented for the electromagnetic wave scattering from plate structures composed of dielectric and conducting objects.

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$Mg_xZn_{1-x}SiN_2$를 모체로 한 박막 전계발광소자용 형광체의 발광특성 (Luminescent Characteristics of $Mg_xZn_{1-x}SiN_2$ Based Phosphors for Thin Film Electroluminescent Device Applications)

  • 이순석;임성규
    • 전자공학회논문지D
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    • 제34D권2호
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    • pp.27-37
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    • 1997
  • Photoluminescent and cathodoluminescent charcteristics of inorganic luminescent materials were investigated ot develop possible phosphors for thin film electroluminescent (TFEL) device applications. Mg, Zn, and Photoluminescent and cathodoluminescent charcteristics of inorganic luminescent materials were investigated ot develop possible phosphors for thin film electroluminescent (TFEL) device applications. Mg, Zn, and $Si_3N_4$ powders were used to synthesize $(Mg_xZn_{1-x})SiN_2$ host materials. $Tb_4O_7$ and $Eu_2O_3$ powdrs were added as luminescent centers. Very sharp emission spectra of $Tb^{3+}$ ions were observed from $Mg._5Zn._5SiN_2:Tb$ sampels sintered at $1400^{\circ}C$ for an hour and the maximum intensity of emission spectra occured at wavelength of 550nm (green light). Synthetic conditions of $(Mg_xZn_{1-x})SiN_2:Eu$ phosphors were optimized for the hghest luminescence. The Eu concentrations were varied from 0.2% to 1.6%. Before firing, the powders were mixed using ballmills, methanol, acetone, or D.I. water. The Mg/Zn ratio also were varied from x=0.3 to x=0.7. The maximum PL intensity was obtained from a sample with 1.2% Eu concentration and the powder was mixed with methanol and dried before firing. The maximum intensity of the emission spectra occurred t the wavelength of 470nm(blue light). TFEL devices fabricated by using sputter deposition of $(Mg._3Zn._7)SiN_2:Eu$ phosphor layer showed yellowish white emission at the phosphor field of 2MV/cm.

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교류 구동형 박막 전계 발광 소자용 원추형 Si micro-tip 반사체 어래이의 제작 (Fabrication of Cone-shaped Si Micro-tip Reflector Array for Alternating Current Thin Film Electroluminescent Device Application)

  • 주병권;이윤희;오명환
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권9호
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    • pp.662-664
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    • 1999
  • We fabricated AC-TFEL device having cone-shaped Si micro-tip reflector array based on the process which have been conventionally employed for the Si-tip field emitter array in FED system. As a result, the AC-TFEL device having a new geometrical structure could generate well concentrated visible white-light from 3600 reflectors/pixel under bipolar pulse excitation mode only by edge-emission mechanism.

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침형 상압 마이크로 플라즈마 장치에서 발생하는 전기장이 세포 사멸에 미치는 효과 (The effect of RF electric fields from an atmospheric micro-plasma needle device on the death of cells)

  • 윤현진;손채화;김규천;이해준
    • 전기학회논문지
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    • 제57권12호
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    • pp.2249-2254
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    • 2008
  • A non-thermal micron size plasma needle is applicable for medical treatment because it includes radicals, charged particles, ultraviolet emission, and strong electric fields. The electric fields around the plasma needle device driven by a radio frequency wave are investigated in order to calculate the power delivered to the cell. A commercial multi-physics code, CFD-ACE, was utilized for the calculation of electric fields for the optimization of the needle structure. The electric field and energy absorption profiles are presented with the variation of the device structure and the distance between the needle and tissues. The living tissues effectively absorb the radio frequency power from the plasma needle device with the covered pyrex structure.

The Poly(3-hexylthiophene)을 발광층으로 사용한 전계 발광소자의 발광특성 (Emission Properties of Electroluminescent Device Using Poly(3-hexylthiophene) as Emilting Material)

  • 김주승;구할본;조재철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.263-266
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    • 1999
  • Electrolunlinescent devices based on conjugated polymer emitting materials have been much attracted possible applications for multicolor flat panel display, since the conjugated polymers have a small band gap emitting obtained at a low driving voltage. In this paper, we fabricated the single layer EL device using poly(3-hexylthiophene) as emitting material Electroluminescence(EL) and I-V-L characteristics of indium-tin-oxide[ITO]P3HT/AI device with a various thickness were investigated. It was demonstrate that the I-V characteristics depend, not the voltage but the electric- field strength, The current is dependent on the electric filed and not on the applied voltage, indicating that the carriers are injected by a tunneling process. In the device, the barrier to hole injection is only 0.5eV and the barrier to electron injection is 1.5eV.

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고 전압 FED용 Spacer형성 기술 개발 (Development of spacer formation techni4ue for high-voltage FED application)

  • 강문식;주병권;이윤희;유건호;오명환
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 하계학술대회 논문집 G
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    • pp.3274-3275
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    • 1999
  • This paper presents a new method of spacer assembly using anodic bonding method which is very simple and clean. The spacer having $100{\mu}m(W){\times}2.1{\mu}m(H)$ was bonded on amorphous silicon film of anode plate. Then, the vertical-type electrode was used for assembling of spacer in high voltage field emission display. In these results, we suggested that the vertical-type electrode provided spacer alignment for high aspect ratio and more simple batch process than conventional method.

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아스콘 제조 시설에서의 먼지 배출량 산정 방안 연구 (A Study on Estimating PM Emission from Asphalt-Concrete Manufacturing Facilities)

  • 장기원;이상보;김종현;김형천;홍지형;김상균
    • 한국대기환경학회지
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    • 제30권1호
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    • pp.37-47
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    • 2014
  • In this study, field measurement was carried out for reasonable improvement of asphalt concrete manufacturing facilities' PM emissions estimation method. Through those, this study calculated PM emission factor and tried to estimate PM emissions from asphalt concrete manufacturing facilities suitable for domestic characteristics. As a result, the efficiency of the PM control device was measured as 99.9%. Using this, uncontrolled PM emission factor was calculated. PM emission factor was calculated 10.97 kg/ton at 23 asphalt concrete manufacturing facilities of 22 workplaces. The PM current emission factor of the US Environment Protection Agency (EPA) is 14.4 kg/ton, the factor calculated from this study is about 24% lower than the EPA standard.

풀밴드 몬데카를로 방법을 이용한 GaAs 임팩트이온화의 온도 의존성에 관한 연구 (A Study on the Temperature dependent Impact ionization for GaAs using the Full Band Monte Carlo Method)

  • 고석웅;유창관;정학기
    • 한국정보통신학회논문지
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    • 제4권3호
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    • pp.697-703
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    • 2000
  • 임팩트이온화현상은 소자의 크기가 점점 작아지면서, 높은 에너지에 있는 hot carrier 전송 을 해석하기 위해 매우 중요하므로 소자의 시뮬레이션에 정확한 임팩트이온화모델이 필수적이다. 털 연구에서는 의사포텐셜방법을 사용하여 풀밴드모델을 구하고, 임팩트이온화율은 수정된 Keldysh 공식을 이용하여 유도하였다. 본 연구에서는 Gahs 임팩트이은화의 온도의존특성을 조사하기 위하여 Monte Carlo 시뮬레이터를 제작하여 임팩트이온화계수를 구하였다. 결과적으로, 임팩트이온화계수는 300K에서 실험값과 잘 일치하였다. 또한 에너지는 전계가 증가할수록 증가하고, 높은 온도에서는 포논 산란의 emission mode가 높기 때문에 에너지가 감소함을 알 수 있었다. 임팩트이온화의 대수 fitting 함수 식은 온도와 전계에 대해 2차식으로 표현하였다. 대수 fitting 함수의 오차는 대부분 5%이내에 머물렀다. 그러므로 대수식으로 표현된 임팩트 이온화계수는 온도에 의존함을 알았고, 임팩트이온화계수를 구하는데 시간을 절약할 수 있다.

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