• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2011년도 추계학술발표대회
• /
• pp.27.2-27.2
• /
• 2011

Polymer electronics is the one of the most promising way to realize the flexible electronics and many studies made remarkable progress to achieve the improvement in performance of polymer electronics comparable to current silicon-based technology. PBTTT is conjugated semiconducting polymer with highly ordered, chain-extended crystalline microstructures and shows high field effect mobilities above 0.1 $cm^2/Vs$. We studied PBTTTs FETs phase and explored methods to control channel interface in various device structures. Especially, in PBTTTs' unique nano-ribbon phase, we could obtain high mobilities of up to 0.4 $cm^2/Vs$, which was not reached before. Alignment of PBTTTs film was carried out using zone casting and anisotropy of mobilities in parallel and perpendicular to the polymer chain direction was investigated. Optical anisotropy in aligned nano-ribbon PBTTT FETs was also studied using a polarized optical absorption.

• 한국고분자학회:학술대회논문집
• /
• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
• /
• pp.168-168
• /
• 2006

Low-operating voltage organic field-effect transistors (OFETs) have been realized with high dielectric constant (${\kappa}$) polymer such as cyanoethylated poly vinyl alcohol (CR-V, ${\kappa}=12$). Since the $high-{\kappa}$polymers are likely to contain water and ionic impurities, large hysteresis and considerable leakage current are frequently observed in OFETs. To solve these problems, we cross-linked the CR-V by using a cross-linking agent. Cross-linked CR-V dielectrics showed high dielectric constant of 11.1 and good insulating properties, resulting in a high capacitance ($81nF/cm^{2}$ at 1MHz) at 120 nm of dielectric thickness. Pentacene FETs with cross-linked CR-V dielectrics exhibited high carrier mobility ($0.72\;cm^{2}/Vs$), small subthreshold swing (185 mV/dec) and little hysteresis at low-operating voltage (${\Leq}-3V$).

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
• /
• pp.675-678
• /
• 2003

We studied the electrical characteristics of pentacene-based organic field-effect transistors (FETs) with polymethyl methacrylate (PMMA) or poly-4-vinylphenol (PVP) as the gate insulator. PMMA or PVP was spin-coated on the indium tin oxide glass substrate that serves as gate electrodes. The source-drain current dependence on the gate voltage shows the FET characteristics of the hole accumulation type. The transistor with PVP shows a higher field-effect mobility of 0.14 $cm^{2}/Vs$ compared with 0.045 $cm^{2}/Vs$ for the transistor with PMMA. The atomic force microscope (AFM) images indicate that the grain size of the pentacene on PVP is larger than that on PMMA. X-ray diffraction (XRD) patterns for the pentacene deposited on PVP exhibit a new Bragg reflection at $19.5{\pm}0.2^{\circ}$, which is absent for the pentacene on PMMA. This peak corresponds to the flat-lying pentacene molecules with less intermolecular spacing.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
• /
• pp.1297-1298
• /
• 2006

Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have been attracted recently attention due to their highdevice performance expected from theoretical simulations among nanowire-based FETs with other gate geometries. OSG FETs with the channels of ZnO nanowires were successfully fabricated in this study with photolithographic processes. In the OSG FETs fabricated on oxidized Si substrates, the channels of ZnO nanowires with diameters of about 60 nm are coated surroundingly by $Al_{2}O_{3}$ as gate dielectrics with atomic layer deposition. About 80 % of the surfaces of the nanowires coated with $Al_{2}O_{3}$ is covered with gate metal to form OSG FETs. A representative OSG FET fabricated in this study exhibits a mobility of 98.9 $cm^{2}/Vs$, a peak transconductance of 0.4 ${\mu}S$, and an Ion/Ioff ratio of $10^6$ the value of the Ion/Ioff ratio obtained from this OSG FET is the highest among nanowire-based FETs, to our knowledge. Its mobility, peak transconductance, and Ion/Ioff ratio arc remarkably enhanced by 11.5, 32, and $10^6$ times, respectively, compared with a back-gate FET with the same ZnO nanowire channel as utilized in the OSG FET.

• ETRI Journal
• /
• 제39권2호
• /
• pp.284-291
• /
• 2017

Drain-induced barrier lowering (DIBL) is one of the main parameters employed to indicate the short-channel effect for nano metal-oxide semiconductor field-effect transistors (MOSFETs). We propose a new physical model of the DIBL effect under two-dimensional approximations based on the energy-conservation equation for channel electrons in FETs, which is different from the former field-penetration model. The DIBL is caused by lowering of the effective potential barrier height seen by the channel electrons because a lateral channel electric field results in an increase in the average kinetic energy of the channel electrons. The channel length, temperature, and doping concentration-dependent DIBL effects predicted by the proposed physical model agree well with the experimental data and simulation results reported in Nature and other journals.

• Journal of information and communication convergence engineering
• /
• 제14권1호
• /
• pp.40-44
• /
• 2016

The device coupling between the stacked top/bottom field-effect transistors (FETs) in two types of monolithic 3D inverter (M3INV) with/without a metal layer in the bottom tier is investigated, and then the regime of the thickness T_ILD and dielectric constant ε_r of the inter-layer distance (ILD), the doping concentration N_d (N_a), and length L_g of the channel, and the side-wall length L_SW where the stacked FETs are coupled are studied. When N_d (N_a) < 10¹⁶ cm^-3 and L_SW < 20 nm, the threshold voltage shift of the top FET varies almost constantly by the gate voltage of the bottom FET, but when N_d (N_a) > 10¹⁶ cm^-3 or L_SW > 20 nm, the shift decreases and increases, respectively. M3INVs with T_ILD ≥ 50 nm and ε_r ≤ 3.9 can neglect the interaction between the stacked FETs, but when T_ILD or ε_r do not meet the above conditions, the interaction must be taken into consideration.

• 한국표면공학회지
• /
• 제49권2호
• /
• pp.152-158
• /
• 2016

We investigated the effect of capacitively coupled Ar plasma treatment on contact resistance ($R_c$) and channel sheet resistance ($R_{sh}$) of graphene field effect transistors (FETs), by varying their channel length in the wide range from 200 nm to $50{\mu}m$ which formed the transfer length method (TLM) patterns. When the Ar plasma treatment was performed on the long channel ($10{\sim}50{\mu}m$) graphene FETs for 20 s, $R_c$ decreased from 2.4 to $1.15k{\Omega}{\cdot}{\mu}m$. It is understood that this improvement in $R_c$ is attributed to the formation of $sp^3$ bonds and dangling bonds by the plasma. However, when the channel length of the FETs decreased down to 200 nm, the drain current ($I_d$) decreased upon the plasma treatment because of the significant increase of channel $R_{sh}$ which was attributed to the atomic structural disorder induced by the plasma across the transfer length at the edge of the channel region. This study suggests a practical guideline to reduce $R_c$ using various plasma treatments for the $R_c$ sensitive graphene and other 2D material devices, where $R_c$ is traded off with $R_{sh}$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.70-71
• /
• 2007

Analyzing pentacene field effect transistors (FETs) with Au source and drain electrodes as Maxwell-Wagner effect elements, electron and hole injection from the Au electrodes into the FET channel were examined using current-voltage (I-V), capacitance-voltage (C-V) and optical second harmonic generation (SHG) measurements. Based on these results, a mechanism of the hole and electron injection into pentacene from the Au electrodes and subsequently recombination mechanism with light-emitting in the pentacene layer are discussed, with taking into account the presence of trapped charges.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.82-82
• /
• 2008

One-dimensional (1D) nanowires have been received much attention due to their potential for applications in various field. Recently some logic applications fabricated on various nanowires, such as ZnO, CdS, Si, are reported. These logic circuits, which consist of two- or three field effect transistors(FETs), are basic components of computation machine such as central process unit (CPU). FETs fabricated on nanowire generally have surrounded shapes of gate structure, which improve the device performance. Highly integrated circuits can also be achieved by fabricating on nano-scaled nanowires. But the numerical and SPICE simulation about the logic circuitry have never been reported and analyses of detailed parameters related to performance, such as channel doping, gate shapes, souce/drain contact and etc., were strongly needed. In our study, NAND and NOT logic circuits were simulated and characterized using 2- and 3-dimensional numerical simulation (SILVACO ATLAS) and built-in spice module(mixed mode).

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.491-491
• /
• 2011

Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.