• Geomechanics and Engineering
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• v.37 no.6
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• pp.591-597
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• 2024

The purpose of this paper is to depict the effect of gravity on a nonlocal thermoelastic medium with initial stress. The Lord-Shulman and Green-Lindsay theories with fractional derivative order serve as the foundation for the formulation of the fundamental equations for the problem. To address the problem and acquire the exact expressions of physical fields, appropriate non-dimensional variables and normal mode analysis are used. MATLAB software is used for numerical calculations. The projected outcomes in the presence and absence of the gravitational field, along with a nonlocal parameter, are compared. Additional comparisons are made for various fractional derivative order values. It is evident that the variation of physical variables is significantly influenced by the fractional derivative order, nonlocal parameter and gravity field.

• Progress in Superconductivity and Cryogenics
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• v.19 no.1
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• pp.51-55
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• 2017

To obtain Nuclear Magnetic Resonance (NMR) measurement of membrane protein, an NMR magnet is required to generate high intensity, homogeneity, and stability of field. A High-Temperature Superconducting (HTS) magnet is a promising alternative to a conventional Low-Temperature Superconducting (LTS) NMR magnet for high field, current density, and stability margin. Conventionally, an HTS coil has been wound by several winding techniques such as Single-Pancake (SP), Double-Pancake (DP), and layer-wound. The DP winding technique has been frequently used for a large magnet because long HTS wire is generally difficult to manufacture, and maintenance of magnet is convenient. However, magnetic field generated by the slanted turns and the splice leads to field inhomogeneity in Diameter of Spherical Volume (DSV). The field inhomogeneity degrades performance of NMR spectrometer and thus effect of the slanted turns and the splice should be analyzed. In this paper, field gradient of HTS double-pancake coils considering the slanted turns and the splice was calculated using Biot-Savart law and numerical integration. The calculation results showed that magnetic field produced by the slanted turns and the splice caused significant inhomogeneity of field.

• Journal of Biosystems Engineering
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• v.26 no.6
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• pp.517-524
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• 2001

Steep and narrow ramp installed in the paddy field makes it difficult and sometimes dangerous to drive agricultural machines on it. Because agricultural machinery become larger and heavier, it is necessary to revise design standard for ramp to provide safe travel. This study was conducted to revise the design standard fur paddy field ramp, especially for its width and slope. A mathematical model predicting travelling path of a tractor on paddy field ramp and farm road was developed and simulated. To verify this model, field tests were carried out. The model could predict trvelling path with RMS Error of 12.5cm and 8.2cm, which were judged to be adoptable fur determining the width of paddy field ramp. By applying this model to 110ps tractor, which was assumed to be the largest tractor in Korea, width of paddy field ramp was determined as over 3.6m. The slope of paddy field ramp, which provided tractor with 10% of the total weight of the tractor and the mounted implement as reaction force at front wheel against ground was analyzed by considering weight transfer effect on a ramp. The result showed that adequate slope of paddy field ramp was 14°.

• Journal of the Korean Geophysical Society
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• v.7 no.1
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• pp.11-21
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• 2004

The variation of geomagnetic field and absolute magnetic field at the geomagnetic observatory of King Sejong Station has been measured with 3-component ring core fluxgate magnetometer, proton magnetometer and D-I magnetometer. With data obtained from King Sejong Station during 2003, thediurnal and annual variations of geomagnetic field were researched and compared with those at other observatories. The deviation of daily variation of magnetic field in antarctica decreased gradually during winter season due to sun effect. The rates of componental annual variation of magnetic field at King Sejong Station were calculated using the least-square method under the assumption that the annual variation of magnetic field is linear. The rates are -55.93 nT/year in horizontal intensity, -0.87 min./year in declination, 58.30 nT/year in vertical intensity, and -69.85 nT/year in total intensity of magnetic field. A remarkable variation was caused by the magnetic storms occurred on 29~30 October, which were so powerful that the variation was observed in mid latitudes as well as high latitudes. The values of variation are generally 1500 2000 nT in Antarctica including King Sejong Station, 350 500 nT in East Asia. The measurement of absolute magnetic field shows that ring core fluxgate magnetometer has relatively large error range under cold temperature.

• Journal of the Korean Magnetics Society
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• v.4 no.2
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• pp.150-153
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• 1994

Magnetic field annealing method has been used to obtain proper hysteresis loop shapes which are useful to a device using amorphous ribbon. In this study, two pairs of Helmhotz coils were used to apply longitudinal and transverse magnetic field during annealing. For the measurement of coercive field strength noise which depends on magnetic field annealing, Co-based amorphous alloy ribbon $VITROVAC^{\circledR}$ 6030 was used. For the sample which was annealed under dc transverse and dc longitudinal magnetic field, coercive field strength noise was nearly independent of magnetizing frequency ranging from 1 to 100 kHz, but dc transverse and ac longitudinal magnetic fields annealed samples show that the coercive field strength noise decreased in power of magnetizing frequency. When magnetic domain nucleation occurred, the coercive field strength noise increased remarkably and decreased in power of magnetizing frequency.

• Journal of radiological science and technology
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• v.8 no.2
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• pp.71-72
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• 1985

This study was performed on the dose distribution of various field size and the effect of penumbra shield in the telecobalt unit. The results obtained are as follows. 1. Errors of the light and ${\gamma}-ray$ field size was below the regulation as 0.52 percentage. 2. The coefficient of field area was increased with the larger field area, and this coefficient was showed the more difference in larger SSD. 3. The rectangular field areas, which were described by level of the same percentage depth does, were decreased with the more elongation factor. At the same elongation factor, the compensating factor was decreased with the larger field size. 4. The lead block or extension collimator was able to shield r-ray exposure of outside field size from 50 to 80 percentage. 5. On the matching adjacent fields, while the gap between beam edges are contacted, that overlapped beam edges indicated up to 140 percentage, and while the gap was 1 cm, it could be reduced to 90 Percentage. The lead-libocking on the overlapped area was more effective to lower dose, as 80 percentage in this case. 6. Percentage depth dose of various trimming field sizes were increased linearlly according to area 1 perimeter size, but the center split field size did not maintain linearlly.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.12
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• pp.1667-1675
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• 2001

Numerical simulations are carried out for the liquid encapsulant Czochralski(LEC) by imposing a magnetic field. The use of a magnetic field to the crystal growth is to suppress melt convection and to improve the homogeneity of the crystal. In the present numerical investigation, we focus on the range of 0-0.3Tesla strength for the axial and cusped magnetic field and the effect of the magnetic field on the melt-crystal interface, flow field and temperature distribution which are the major factors to determine the quality of the single crystal are of particular interest. For both axial and cusped magnetic field, increase of the magnetic field strength causes a more convex interface to the crystal. In general, the flow is weakened by the application of magnetic field so that the shape of the melt-crystal interface and the transport phenomena are affected by the change of the flow and temperature field.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.294.1-294.1
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• 2016

Transition metal dichalcogenides (TMDs) with two-dimensional layered structure, such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), are considered attractive materials for future semiconductor devices due to its relatively superior electrical, optical, and mechanical properties. Their excellent scalability down to a monolayer based on the van der Waals layered structure without surface dangling bonds makes semiconductor devices based on TMD free from short channel effect. In comparison to the widely studied transistor based on MoS2, researchs focusing on WSe2 transistor are still limited. WSe2 is more resistant to oxidation in humid ambient condition and relatively air-stable than sulphides such as MoS2. These properties of WSe2 provide potential to fabricate high-performance filed-effect transistor if outstanding electronic characteristics can be achieved by suitable metal contacts and doping phenomenon. Here, we demonstrate the effect of two different metal contacts (titanium and platinum) in field-effect transistor based on WSe2, which regulate electronic characteristics of device by controlling the effective barreier height of the metal-semiconductor junction. Electronic properties of WSe2 transistor were systematically investigated through monitoring of threshold voltage shift, carrier concentration difference, on-current ratio, and field-effect mobility ratio with two different metal contacts. Additionally, performance of transistor based on WSe2 is further enhanced through reliable and controllable n-type doping method of WSe2 by triphenylphosphine (PPh3), which activates the doping phenomenon by thermal annealing process and adjust the doping level by controlling the doping concentration of PPh3. The doping level is controlled in the non-degenerate regime, where performance parameters of PPh3 doped WSe2 transistor can be optimized.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.6
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• pp.648-654
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• 2003

Diamond MIS(Metal-Insulator-Semiconductor) diodes and MISFETs(Metal-Insulator-Semiconductor Field Effect Transistors) were fabricated by employing various fluorides as gate insulator, and their electrical properties were closely investigated by means of C-V measurements. The A1/BaF$_2$/diamond MIS structure exhibited outstanding electrical properties. The MIS diode showed a very low surface state density of ∼10$\^$10//$\textrm{cm}^2$ eV near the valence band edge, and the observed effective mobility(${\mu}$$\_$eff/) of the MISFET was 400 $\textrm{cm}^2$/Vs, which is the highest value obtained until now in the diamond FET. From the chemiphysical point of view, the above result might be explained by the reduction of adsorbed-oxygen on the diamond surface via strong chemical reaction by the constituent Ba atom in the insulator during the film deposition(Oxygen-Gettering Effect).

• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.114-121
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• 2014

We report a polysilicon active area membrane field effect transistor (PSAFET) pressure sensor for low stress deflection of membrane. The PSAFET was produced in conventional FET semiconductor fabrication and backside wet etching. The PSAFET located at the front side measured pressure change using 300 nm thin-nitride membrane when a membrane was slightly strained by the small deflection of membrane shape from backside with any physical force. The PSAFET showed high sensitivity around threshold voltage, because threshold voltage variation was composed of fractional function form in sensitivity equation of current variation. When gate voltage was biased close to threshold voltage, a fractional function form had infinite value at $V_{tn}$, which increased the current variation of sensitivity. Threshold voltage effect was dominant right after the PSAFET was turned on. Narrow transistor channel established by small current flow was choked because electron could barely cross drain-source electrodes. When gate voltage was far from threshold voltage, threshold voltage effect converged to zero in fractional form of threshold voltage variations and drain current change was mostly determined by mobility changes. As the PSAFET fabrication was compatible with a polysilicon FET in CMOS fabrication, it could be adapted in low pressure sensor and bio molecular sensor.