• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.322-322
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• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.

• Journal of the Optical Society of Korea
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• 제20권5호
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• pp.575-578
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• 2016

The thermal endurance of fiber Bragg gratings (FBGs), written with the aid of 193-nm ArF excimer laser irradiation on H₂-loaded Ge/B codoped silica fiber, and pretreated with a CO₂ laser and a subsequent slow cooling process, is investigated. These treated gratings show relatively less degradation of grating strength during the thermal annealing procedure. The thermal decay characteristics of treated and untreated fiber, recorded over a time period of 9 hours, have been compared. The effect on the Bragg transmission depth (BTD) and the center-wavelength shift, as well as the growth of refractive-index change during the grating inscription process for both treated and untreated fiber, are analyzed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.430-430
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• 2008

Using multi plasma enhanced chemical vapor deposition system (Multi-PECVD), p-a-Si:H deposition layer as a $p^+$ region which was annealed by laser (Q-switched fiber laser, $\lambda$ = 1064 nm) on an n-type single crystalline Si (100) plane circle wafer was prepared as new doping method for single crystalline interdigitated back contact (IBC) solar cells. As lots of earlier studies implemented, most cases dealt with the excimer (excited dimer) laserannealing or crystallization of boron with the ultraviolet wavelength range and $10^{-9}$ sec pulse duration. In this study, the Q-switched fiber laser which has higher power, longer wavelength of infrared range ($\lambda$ = 1064 nm) and longer pulse duration of $10^{-8}$ sec than excimer laser was introduced for uniformly deposited p-a-Si:H layer to be annealed and to make sheet resistance expectable as an important process for IBC solar cell $p^+$ layer on a polished n-type Si circle wafer. A $525{\mu}m$ thick n-type Si semiconductor circle wafer of (100) plane which was dipped in a buffered hydrofluoric acid solution for 30 seconds was mounted on the Multi-PECVD system for p-a-Si:H deposition layer with the ratio of $SiH_4:H_2:B_2H_6$ = 30:120:30, at $200^{\circ}C$, 50 W power, 0.2 Torr pressure for 20 minutes. 15 mm $\times$ 15 mm size laser cut samples were annealed by fiber laser with different sets of power levels and frequencies. By comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 50 mm/s of mark speed, 160 kHz of period, 21 % of power level with continuous wave mode of scanner lens showed the features of small difference of lifetime and lowering sheet resistance than before the fiber laser treatment with not much surface damages. Diode level device was made to confirm these experimental results by measuring C-V, I-V characteristics. Uniform and expectable boron doped layer can play an important role to predict the efficiency during the fabricating process of IBC solar cells.

• 한국정보통신학회논문지
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• 제20권10호
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• pp.1980-1986
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• 2016

본 논문에서는 KrF 레이저를 이용한 격자 공정 후 고온 어닐링 온도조건에 따른 감마방사선 영향을 분석하였다. 제작된 광섬유 브래그 격자는 게르마늄(Ge)이 첨가된 동일한 광섬유에 어닐링 온도를 달리하여 제작하였으며, $Co^{60}$ 감마선원을 이용하여 약 115 Gy/min의 선량률로 총선량 약 31 kGy 감마선을 조사하였다. 격자의 안정화를 위한 고온 어닐링 공정은 광섬유 브래그 격자의 방사선 민감도 변화에 영향을 주는 것으로 나타났다. 실험결과를 통하여, 각각 다른 온도(100, 150, $200^{\circ}C$)로 안정화시킨 광섬유 브래그 격자들은 고온에 노출될수록 방사선 민감도가 증가했으며, 어닐링 온도조건에 따라서 방사선에 의한 브래그 파장 변화는 2배 이상의 차이를 보였다.

• Applied Science and Convergence Technology
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• 제23권4호
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• pp.187-191
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• 2014

Indium oxide ($In_2O_3$) nanorods (NRs) which can be expected to increase the device performance in various electronic and electrochemical applications were prepared on carbon fibers via an electrochemical deposition (ED) method. During the ED, the indium hydroxide ($In(OH)_3$) NRs were well grown and firmly attached onto the carbon fibers. After that, they were changed into $In_2O_3$ by dehydration through a thermal annealing. The morphological and structural properties were investigated using field-emission scanning electron microscope images. The crystallinity of as-prepared sample was evaluated by X-ray diffraction. The Fourier transform infrared results confirm that the functional groups are present in the $In_2O_3$ NRs. This facile process of metal oxide nanostructures on carbon fiber can be utilized for flexible electronic and energy related applications.