• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.282.1-282.1
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• 2016

The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2014.11a
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• pp.226-227
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• 2014

We demonstrate nanoscale local anodic oxidation (LAO) patterning on few layer graphene using atomic force microscope (AFM) at room temperature and normal atmosphere. We focus on the humidity dependency in nanoscale oxidation of graphene. The relationship between the oxidation size and the AFM setting values, such as set point, tip speed, and humidity are observed. By changing these values, proper parameters were found to produce features on demand size. This technique provides an easy way to form graphene oxide lithography without any chemical resists. We have obtained oxidation size down to 50-nm with 6-nm-height oxide barrier line with $0.1{\mu}m/s$ tip scanning speed and micrometer size symbols on a graphene flake. We attribute the bumps to local anodic oxidation on graphene surface and combination of oxygen ions into the graphene lattice.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• Clean Technology
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• v.27 no.3
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• pp.217-222
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• 2021

Although monolayer black phosphorus (BP) and few-layer BP nanosheets (NSs) have been extensively studied as promising alternatives to graphene, research has focused primarily on atomically thin-layered BP in an isolated form. In order to realize the practical applications of BP-related devices, a BP film based on continuous networking of few-layer BP NSs should be developed. In this study, a transparent BP film with high quality was fabricated via a vacuum filtration method. An oxygen-free water solvent was used as an exfoliation medium to avoid significant oxidation of the few-layer BP NSs in liquid-phase exfoliation. The exfoliation efficiency from bulk BP to the few-layer BP NSs was estimated at 22%, which is highly efficient for the production of continuous BP film. The characteristics of the high-quality BP film were determined as 98% transparency, minimum oxidation of 18%, structural stability, and an appropriate bandgap of about 1.8 eV as a semiconductor layer. In order to demonstrate the potential of the BP film for photocatalytic activity, we performed photoelectrochemical water oxidation of the transparent BP film. Although its performance should be improved for practical applications, the BP film could function as a photoanode, which offers a new potential semiconductor in water oxidation. We believe that if the BP film is adequately engineered with other catalysts the photocatalytic activity of the BP film will be improved.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.658-658
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• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• Tribology and Lubricants
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• v.37 no.5
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• pp.151-163
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• 2021

Since the discovery of single-layer graphene, exploiting graphene's excellent physical/chemical properties in tribology systems has been a topic of interest in academia over the last few decades. There is no doubt that understanding the underlying friction mechanism of graphite should precede this. Even now, new properties of graphene are being reported in academia, and based on this, studies exploring the origins of graphene's surface properties and friction characteristics in a wide range of scales are also being performed. From the perspective of lubrication engineering, graphene research can be largely divided into studies that 1) reveal its basic friction mechanism at the nanoscale and 2) explore its application in macroscale sliding systems. At the nanoscale, the basic friction mechanism of graphene is mainly due to its atomic thickness. In this paper, the various research on the nanoscale friction and surface characteristics of graphene is reviewed. Graphene surface properties, such as wettability and surface energy and the basic friction mechanisms of graphene attributed to adhesion, electronphonon scattering, bending stiffness, and the underlying substrate, are summarized. Further, we provide the research outcomes on the superlubricity of graphene. Finally, the potential application and challenges of the superlubricity of graphene are highlighted. Through this, we intend to provide summarized information to researchers interested in the tribological properties of graphene and help set the direction of future research.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.9
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• pp.45-51
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• 2014

This work carried out for the effective synthesis characteristics of graphene nanowall film by controlling the electric field in a RF plasma CVD process. For that, the bipolar bias voltage was applied to the substrate such as Si and glass materials for the best chemical reaction of positive and negative charges existing in the plasma. For supplying the seed formation sites on substrate and removing the oxidation layer on the substrate surface, the electron bombardment into substrates was performed by a positive few voltage in hydrogen plasma. After that, hydrocarbon film, which is not a graphene nanowall, was deposited on substrates under a negative bias voltage with hydrogen and methane gases. At this step, the film on substrates could not easily identify due to its transparent characteristics. However, the transparent film was easily changed into graphene nanowall by the final hydrogen plasma treatment process. The resultant raman spectra shows the existence of significant large 2D peaks corresponding to the graphene.

• Applied Microscopy
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• v.47 no.3
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• pp.176-186
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• 2017

Two-dimensional (2D) materials have been studied widely owing to their outstanding properties since monolayer graphene was isolated in 2004. Especially, among 2D materials, phosphorene, a single atomic layer of black phosphorus (BP), has been highlighted for its electrical properties. This material can serve as a substitute for graphene, which has been revealed as a "semi-metal", in next-generation semiconductors. However, few-layer BP is prone to degradation under ambient conditions owing to its reactivity with oxygen and water, which results in the condensation of water droplets on the surface of the BP flakes. This causes charge transfer from the phosphorus atom to oxygen, resulting in the formation of phosphoric acid (oxide) and degrades the various properties of BP. Therefore, it is necessary to find passivation methods to prevent BP flakes from being degraded under ambient conditions. This review article deals with recent studies on passivation methods for BP and their performance against oxygen and water, effects on the electrical properties of BP, and the extent to how they protect BP.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.78-82
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• 2011

Mono- and few-layer graphenes were grown on Ni thin films by rapid-thermal pulse chemical vapor deposition technique. In the growth steps, the exposure step for 60 s in $H_2$ (a flow rate of 10 sccm (standard cubic centimeters per minute)) atmosphere after graphene growth was specially established to improve the quality of the graphenes. The graphene films grown by exposure alone without $H_2$ showed an intensity ratio of $I_G/I_{2D}$ = 0.47, compared with a value of 0.38 in the films grown by exposure in H2 ambient. The quality of the graphenes can be improved by exposure for 60 s in $H_2$ ambient after the growth of the graphene films. The physical properties of the graphene films were investigated for the graphene films grown on various Ni film thicknesses and on 260-nm thick Ni films annealed at 500 and $700^{\circ}C$. The graphene films grown on 260-nm thick Ni films at $900^{\circ}C$ showed the lowest $I_G/I_{2D}$ ratio, resulting in the fewest layers. The graphene films grown on Ni films annealed at $700^{\circ}C$ for 2 h showed a decrease of the number of layers. The graphene films were dependent on the thickness and the grain size of the Ni films.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.105-105
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• 2012

We have developed a photoemission-assisted plasma-enhanced chemical vapor deposition (PAPE-CVD) [1,2], in which photoelectrons emitting from the substrate surface irradiated with UV light ($h{\nu}$=7.2 eV) from a Xe excimer lamp are utilized as a trigger for generating DC discharge plasma as depicted in Fig. 1. As a result, photoemission-assisted plasma can appear just above the substrate surface with a limited interval between the substrate and the electrode (~10 mm), enabling us to suppress effectively the unintended deposition of soot on the chamber walls, to increase the deposition rate, and to decrease drastically the electric power consumption. In case of the deposition of DLC gate insulator films for the top-gate graphene channel FET, plasma discharge power is reduced down to as low as 0.01W, giving rise to decrease significantly the plasma-induced damage on the graphene channel [3]. In addition, DLC thickness can be precisely controlled in an atomic scale and dielectric constant is also changed from low ${\kappa}$ for the passivation layer to high ${\kappa}$ for the gate insulator. On the other hand, negative electron affinity (NEA) of a hydrogen-terminated diamond surface is attractive and of practical importance for PAPECVD, because the diamond surface under PAPE-CVD with H2-diluted (about 1%) CH4 gas is exposed to a lot of hydrogen radicals and therefore can perform as a high-efficiency electron emitter due to NEA. In fact, we observed a large change of discharge current between with and without hydrogen termination. It is noted that photoelectrons are emitted from the SiO2 (350 nm)/Si interface with 7.2-eV UV light, making it possible to grow few-layer graphene on the thick SiO2 surface with no transition layer of amorphous carbon by means of PAPE-CVD without any metal catalyst.