• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1472-1475
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• 1996

D-E hysteresis loops have been measured for the 65/35 mole % copolymer of vinylidene fluoride and trifIuoroethyIene over wide temperature range. The results were analyzed and discussed. The remanent polarization and the coercive field at room termperature were estimated to be 75 $mC/m^3$ and 55 MV/m respectively. D-E hysteresis loops were observed even below the glass transiation temperature$-20^{\circ}C$) and the remanent polarization and the coercive field were larger than larger, as the temperature lower. It seems that the remanent polarization and the coercive field depend on the amorphous region as well as crystalline region in this copolymer. And the ferroelectric-to-paraelectric phase transition was observed at $90^{\circ}C$ on heating and $80^{\circ}C$ on cooling. Double hysteresis loops were observed at the temperature($85^{\circ}C$) of paraelectric phase.

• 한국재료학회지
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• 제19권4호
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• pp.228-231
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• 2009

Phase transition in ferroelectric polymer is very interesting behavior and has been widely studied for real device applications, such as actuators and sensors. Through the phase transition, there is structural change resulting in the change of electrical and optical properties. In this study, we fabricated the Febry-Perot interferometer with the thin film of ferroelectric P(VDF-TrFE) 50/50 mol% copolymer, and thermo-optical properties were investigated. The effective thermo-optical coefficient of P(VDF-TrFE) was obtained as $2.3{\sim}3.8{\times}10^{-4}/K$ in the ferroelectric temperature region ($45^{\circ}C{\sim}65^{\circ}C$) and $6.0{\times}10^{-4}/K$ in the phase transition temperature region ($65^{\circ}C{\sim}85^{\circ}C$), which is a larger than optical silica-fiber and PMMA. The resonance transmission peak of P(VDF-TrFE) with the variation of temperature showed hysteretic variation and the phase transition temperature of the polymer in heating condition was higher than in the cooling condition. The elimination of the hysteretic phase transition of P(VDF-TrFE) is necessary for practical applications of optical devices.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.86.1-86
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• 2002

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1061-1067
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• 2004

In this study, ferroelectric (Ba,Sr)TiO$_3$ and high temperature superconductor YBCO thin films were fabricated by PLD (Pulsed Laser Deposition) method and tuneable bandstop filters were implemented with two different IDC(Interdigital Capacitance) gap patterns, 20${\mu}{\textrm}{m}$ and 30${\mu}{\textrm}{m}$ using these two thin film layers. The resonant frequency was changed by DC bias voltage. By comparing measured results with simulation, the dielectric properties of ferroelectric thin film have been extracted. The permittivity was 820 ～ 900 at 30 K and had an acceptable error range but the loss tangent had a great difference, 0.018 in 30${\mu}{\textrm}{m}$ IDC gap pattern and 0.037 in 20 ${\mu}{\textrm}{m}$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.235-238
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• 1998

Ferroelectric $LiNbO_3$ thin films were grown directly on Si(100) substrates by 13.55MHz RF magnetron sputtering system using a ceramic target ($Nb_2O_5/Li_2C0_3$ = 51.4/48.6). Because high temperature process have to avoided to prevent degradation of the interface (insulator/Si), $LiNbO_3$ thin films were deposited below $300^{\circ}C$. After as-deposited films were performed RTA treatments in an oxygen ambient at $600^{\circ}C$ for 60s, electrical measurements performed films before and after anneal treatment. In high field region, the leakage current density of the films after annealing was deceased about 4order and the resistivity of these was increased to about 5\times 10^{11} \Omega \cdot cm$ at 500kV/cm. In accumulation region of C-V curve, we calculated dielectric constant of thin film $LiNbO_3$ as 27.9 which is close to that of bulk value.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.156-165
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• 1997

D-E hysteresis loops have been measured for the 65/35 mole % copolymer of vinylidene fluoride and trifluoroethylene over wide temperature range. The remanent polarization and the coercive field at room temperature were estimated to be 75 mC/m$^{2}$ and 55 MV/m respectively. D-E hysteresis loops were observed even below the glass transition temperature(-20.deg. C) and the remanent polarization and the coercive field were larger, as the temperature lower. It seems that the remanent polarization and the coercive field depend on the amorphous region as well as crystalline region in this copolymer. And the ferroelectric-to-paraelectric phase transition was observed at 90.deg. C on heating and 80'C on cooling. Double hysteresis loops were observed at the temperature(85.deg. C) of paraelectric phase.

• 한국세라믹학회지
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• 제25권6호
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• pp.694-698
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• 1988

Pb(Zr, Ti)O3-Pb(Co, Nb)O3 systems were investigated by x-ray diffraction method. System contains rhombohedral, tetragonal, and pseudocubic structures at room temperature. Crystal symmetry was changed from 4-fold symmetry to 3-fold symmetry by substituting Pb(Co1/3, Nb2/3)O3 ; PCN, to Pb(Zr0.52, Ti0.48)O3 ; PZT. As the substituted PCN concentration was increased, an increase in a-axis direction and a decrease in c-axis in the perovskite structure were occurred simultaneously, so that the crystal symmetry was changed into such way. In the higher sinteringtemperatures, the unit cell distortions occurred rather in the lower substitution range of PCN. The ferroelectric properties were maximized at the region that tetragonal and rhombohedral or pseudocubic structures were coexist.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.71-74
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• 2000

Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.

• Macromolecular Research
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• 제12권1호
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• pp.1-10
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• 2004

The structural changes occurring in the isothermal crystallization processes of polyethylene (PE), poly-oxymethylene (POM), and vinylidene fluoridetrifluoroethylene (VDFTrFE) copolymer have been reviewed on the basis of our recent experimental data collected by the time-resolved measurements of synchrotron-sourced wide-angle (WAXS) and small-angle X-ray scatterings (SAXS) and infrared spectra. The temperature jump from the melt to a crystallization temperature could be measured at a cooling rate of 600-1,000 $^{\circ}C$/min, during which we collected the WAXS, SAXS, and infrared spectral data successfully at time intervals of ca. 10 sec. In the case of PE, the infrared spectral data clarified the generation of chain segments of partially disordered trans conformations immediately after the jump. These segments then became transformed into more-regular all-trans-zigzag forms, followed by the formation of an orthorhombic crystal lattice. At this stage, the generation of a stacked lamella structure having an 800-${\AA}$-long period was detected in the SAXS data. This structure was found to transfer successively to a more densely packed lamella structure having a 400-${\AA}$-long period as a result of the secondary crystallization of the amorphous region in-between the original lamellae. As for POM, the formation process of a stacked lamella structure was essentially the same as that mentioned above for PE, as evidenced from the analysis of SAXS and WAXS data. The observation of morphology-sensitive infrared bands revealed the evolution of fully extended helical chains after the generation of lamella having folded chain structures. We speculate that these extended chains exist as taut tie chains passing continuously through the neighboring lamellae. In the isothermal crystallization of VDFTrFE copolymer from the melt, a paraelectric high-temperature phase was detected at first and then it transferred into the ferroelectric low-temperature phase at a later stage. By analyzing the reflection profile of the WAXS data, the structural ordering in the high-temperature phase and the ferroelectric phase transition to the low-temperature phase of the multi-domain structure were traced successfully.

• Applied Science and Convergence Technology
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• 제24권3호
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• pp.47-52
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• 2015

The correlation between admittance and dielectric spectroscopy of dielectric relaxation in lead scandium noibate, have been investigated. Lead scandium niobate, with composition $PbSc_{0.5}Nb_{0.5}O_3$, was prepared by conventional solid state synthesis. Conductance Y'(G), susceptance Y"(B) and capacitance C of lead scandium niobate as a function of frequency and temperature were measured. From the temperature-dependence of RLC circuit, insight into physical significance of the dielectric properties of lead scandium niobate is obtained. The relative strong frequency dependent of dielectric properties in lead scandium niobate is observed, and the phase transition occurred at a broad temperature region. Also, the value of critical exponent ${\gamma}$=1.6 showed on heating process. The long relaxation times part enlarged diffuse by conductivity effects with increasing temperature, and the ordering between $Sc^{3+}$ and $Nb^{5+}$ in PSN influences complex admittance and dielectric properties. Confirmed the typical characteristic of lead-type relaxor in the Raman spectra of lead scandium niobate and major ranges are between 400 and $900cm^{-1}$.