• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.599-604
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• 1998

We have investigated Pt and $RuO_2$ as a bottom electrode for ferroelectric capacitor applications. The bottom electrodes were prepared by using an RF magnetron sputtering method. Some of the investigated parameters were a substrate temperature, gas flow rate, RF power for the film growth, and post annealing effect. The substrate temperature strongly influenced the surface morphology and resistivity of the bottom electrodes as well as the film crystallographic structure. XRD results on Pt films showed a mixed phase of (111) and (200) peak for the substrate temperature ranged from RT to $200^{\circ}C$, and a preferred (111) orientation for $300^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of $300^{\circ}C$ and RF power 80W for the Pt bottom electrode growth. With the variation of an oxygen partial pressure from 0 to 50%, we learned that only Ru metal was grown with 0~5% of $O_2$ gas, mixed phase of Ru and $RuO_2$ for $O_ 2$ partial pressure between 10~40%, and a pure $RuO_2$ phase with $O_2$ partial pressure of 50%. This result indicates that a double layer of $RuO_2/Ru$ can be grown in a process with the modulation of gas flow rate. Double layer structure is expected to reduce the fatigue problem while keeping a low electrical resistivity. As post anneal temperature was increased from RT to $700^{\circ}C$, the resistivity of Pt and $RuO_2$ was decreased linearly. This paper presents the optimized process conditions of the bottom electrodes for memory device applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.427-432
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• 2024

The polymer crystallization process, promoting the formation of ferroelectric β-phase, is essential for developing polyvinylidene fluoride (PVDF)-based high-performance piezoelectric energy harvesters. However, traditional high-temperature annealing is unsuitable for the manufacture of flexible piezoelectric devices due to the thermal damage to plastic components that occurs during the long processing times. In this study, we investigated the feasibility of introducing a flash lamp annealing that can rapidly induce the β-phase in the PVDF layer while avoiding device damage through selective heating. The flash light-irradiated PVDF films achieved a maximum β-phase content of 76.52% under an applied voltage of 300 V and an on-time of 1.5 ms, a higher fraction than that obtained through thermal annealing. The PVDF-based piezoelectric energy harvester with the optimized irradiation condition generates a stable output voltage of 0.23 V and a current of 102 nA under repeated bendings. These results demonstrate that flash lamp annealing can be an effective process for realizing the mass production of PVDF-based flexible electronics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.384-392
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• 1997

Potassium lithium niobate(KLN) single crystal for a nonlinear-optic material, which changes the wavelength of lasers, has a ferroelectric tetragonal tungsten bronze structure at room temperature. It has been very hard to get single crystals of good quality due to the cracks during cooling process. In order to investigate the composition change due to the evaporation of solution during the growth, the thermogravimetric analysis was carried out. In atmospheric condition at $1000^{\circ}C$ which is about $10^{\circ}C$ higher than the crystal growing temperature, the weight change was negligible amount of $1.46{\times}10^{-5}$g/($\textrm{cm}^2$hr). By using both the Pt plate as the nucleation site and the slow cooling method with temperature fluctuation, KLN single crystal of good quality of size 1 cm could be obtained. The phase transition temperature was $490^{\circ}C$, which was higher than that reported by other researchers of the other composition. The optical anisotropy due to the absorption of OH-band exists in the range of IR.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.218-218
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• 2012

Recently, hexagonal manganites have attracted much attention because of the coexistence of ferroelectricity and antiferromagnetic (AFM) order. The crystal structure of hexagonal manganites consists of $MnO_5$ polyhedra in which $Mn^{3+}$ ion is surrounded by three oxygen atoms in plane and two apical oxygen ions. The Mn ions within Mn-O plane form a triangular lattice and couple the spins through the AFM superexchange interaction. Due to incomplete AFM coupling between neighboring Mn ions in the triangular lattice, the system forms a geometrically-frustrated magnetic state. Among hexagonal manganites, $YMnO_3$, in particular, is the best known experimentally since the f states are empty. In addition, for applications, $YMnO_3$ thin films have been known as promising candidates for non-volatile ferroelectric random access memories. However, $YMnO_3$ has low magnetic order temperature (~70 K) and A-type AFM structure, which hinders its applications. We have synthesized $YMn1_{-x}Cr_xO_3$ (x = 0, 0.05 and 0.1) samples by the conventional solid-state reaction. The powders of stoichiometric proportions were mixed, and calcined at $900^{\circ}C$ for $YMn1_{-x}Cr_xO_3$ for 24 h. The obtained powders were ground, and pressed into 5-mm-thick disks of 1/2-inch diameter. The disks were directly put into the oven, and heated up to $1,300^{\circ}C$ and sintered in air for 24 h. The phase of samples was checked at room temperature by powder x-ray diffraction using a Rigaku Miniflex diffractometer with Cu $K{\alpha}$ radiation. All the magnetization measurements were carried out with a superconducting quantum-interference-device magnetometer. Our experiments point out that the Cr-doped samples show the characteristics of a spin-glass state at low temperatures.

• Korean Journal of Crystallography
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• v.5 no.2
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• pp.85-92
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• 1994

Ferroelectric Bi4Ti3012 thin films have been grown on LaAlO(001) by Pulsed-laser deposition. Phase formation and structural films prepared of the films prepared at varigus deposition temperatures are investigated using x-ray diffraction The film grown at 740℃ shows epitaxial growth behavior with c-akis normal to the substrate. N2tBmstiucCures of Bi4Ti3012/YBa2Cu307-x/LaAIO3(001) have been in-situ grown. Even though the a-and b-axes of the Yba2Cu307-x layer show epitaxial growth behavior.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.257-257
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• 2016

최근에 메모리의 초고속화, 고집적화 및 초절전화가 요구되면서 resistive random access memory (ReRAM), ferroelectric RAM (FeRAM), phase change RAM (PRAM)등과 같은 차세대 메모리 기술이 활발히 연구되고 있다. 다양한 메모리 중에서 특히 resistive random access memory (ReRAM)는 빠른 동작 속도, 낮은 동작 전압, 대용량화와 비휘발성 등의 장점을 가진다. ReRAM 소자는 절연막의 저항 스위칭(resistance switching) 현상을 이용하여 동작하기 때문에 SiOx, AlOx, TaOx, ZrOx, NiOx, TiOx, 그리고 HfOx 등과 같은 금속 산화물에 대한 연구들이 활발하게 이루어지고 있다. 이와 같이 다양한 산화물 중에서 AlOx는 ReRAM의 절연막으로 적용되었을 때, 우수한 저항변화특성과 안정성을 가진다. 하지만, AlOx 박막을 형성하기 위하여 기존에 많이 사용되어지던 PVD (physical vapour deposition) 또는 CVD (chemical vapour deposition) 방법에서는 두께가 균일하고 막질이 우수한 박막을 얻을 수 있지만 고가의 진공장비 사용 및 대면적 공정이 곤란하다는 문제점이 있다. 한편, 용액 공정 방법은 공정과정이 간단하여 경제적이고 대면적화가 가능하며 저온에서 공정이 이루어지는 장점으로 많은 관심을 받고 있다. 본 연구에서는 sputtering 방법과 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서 메모리 특성을 비교 및 평가하였다. 먼저, p-type Si 기판 위에 습식산화를 통하여 SiO2 300 nm를 성장시킨 후, electron beam evaporation으로 하부 전극을 형성하기 위하여 Ti와 Pt를 각각 10 nm와 100 nm의 두께로 증착하였다. 이후, 제작된 AlOx 용액을 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30 초의 조건으로 증착하였다. Solvent 및 불순물 제거를 위하여 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였고, 상부 전극을 형성하기 위해 shadow mask를 이용하여 각각 50 nm, 100 nm 두께의 Ti와 Al을 electron beam evaporation 방법으로 증착하였다. 측정 결과, 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서는 기존의 sputtering 방법으로 제작된 ReRAM에 비해서 저항 분포가 균일하지는 않았지만, 103 cycle 이상의 우수한 endurance 특성을 나타냈다. 또한, 1 V 내외로 동작 전압이 낮았으며 104 초 동안의 retention 측정에서도 메모리 특성이 일정하게 유지되었다. 결론적으로, 간단한 용액 공정 방법은 ReRAM 소자 제작에 많이 이용될 것으로 기대된다.

• Korean Journal of Materials Research
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• v.11 no.11
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• pp.960-964
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• 2001

$Bi_{3.99}Ti_{2.97}V_{0.03}O_{12}$ (BTV) thin films with 3 mol% vanadium doping were Prepared on $Pt/Ti/SiO_2/Si$ substrate by sol-gel method. X-ray diffraction analysis indicated that single-phase layered perovskite were obtained and preferred orientation was not observed. Under the annealing temperature at $600^{\circ}C$, the surface morphology of the BTV thin films had fine-rounded particles and then changed plate-like at $650^{\circ}C$ and $700^{\circ}C$. The remanent polarization $(2P_r)$ and coercive field $(2E_c)$ of $700^{\circ}C$ annealed BTV thin film were 25 $\mu$C/cm$^2$ and 116 kV/cm, respectively. In addition, BTV thin film showed little polarization fatigue during $10_9$ switching cycles. These improved ferroelectric properties were attributed to the increased rattling space and reduced oxygen vacancies by substitution $Ti^{4+}$ ion (68 pm) with smaller $V^{5+}$ ion (59 pm). The dielectric constant and loss were measured 130 and 0.03 at 10 kHz, respectively.

• Korean Journal of Materials Research
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• v.2 no.1
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• pp.43-51
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• 1992

Thin films of )$Pb(Zr, \;TiO_3$ are fabricated by MOCVD using ultrasonic spraying. The films having perovskite structure are made at low deposition temperature, $300-450^{\circ}C$. The phase and composition of the films vary with the composition of the starting solution and the deposition temperature. Dielectric constant of the films is 187 at 1MHz. Ferroelectric hysterysis loop measurements indicate a remanant polarization of $5.5{\mu}C/cm^2$, and coercive field of 65kV/cm. Resistivity of thin films is about $10^{11}{\Omega}cm$ and the breakdown electric field abort 35kV/cm.

• Analytical Science and Technology
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• v.5 no.1
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• pp.115-120
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• 1992

The upper limit of solid solution of $Al_2O_3$ in $LiTaO_3$ was investigated using X-ray diffraction and Raman spectroscopy. By substituting cations in $LiTaO_3$ with $Al^{3+}$, the melting temperature was lowed and the ferroelectric properties can be improved. It is easier at lower temperature to fabricate the single crystal used for SAW filters and IR sensors. From the measured lattice constants and Raman band broadening, the solubility limit was X=0.25mol in $Li_{1-X}Al_{2X}Ta{1-X}O_3$, above which $Al_2O_3$ was obsered as a second phase. The Raman band of sintered $LiTaO_3$ was compared with that of the single crystal to see the effect of grain size on the band broadening.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.263-268
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• 1997

RuO$_3$ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl) ruthenium, Ru$(C_5H_5)_2$, was used as the precursor RuO$_2$single phase was obtained at a low deposition temperature of 25$0^{\circ}C$ and the crystallinity of RuO$_2$thin films improved with increasing deposition temperature. RuO$_2$thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO$_2$films drastically increases with increasing the deposition temperature. The resistivity of the 180 nm-thick RuO$_2$thin films deposited at 27$0^{\circ}C$ was 136 $\mu$$\Omega$-cm and increased with decreasing film thickness. SrBi$_2Ta_2O_4$ thin films deposited by rf magnetron sputtering on the RuO$_2$bottom electrodes showed a fatigue-free characteristics up to ~10$^10$ cycles under 5 V bipolar square pulses and the remanent polarization, 2 P$_r$ and the coercive field, 2 E, were 5.2$\mu$C/$\textrm{cm}^2$ and 76.0 kV/cm, respectively, for an applied voltage of 5 V The leakage current density was about 7.0$\times$10$^{-6}$ A/$\textrm{cm}^2$ at 150 kV/cm.