• Korean Journal of Materials Research
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• v.12 no.8
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• pp.613-616
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• 2002

The polarization properties of $BaTiO_3$ were investigated by using thermally stimulated depolarization current (TSDC) technique. Two peaks were observed at about 400 K (peak A) and 435 K (peak B) from TSDC spectra obtained from the temperature range of 280-500 K. Peak A shows a sharp decrease of TSDC due to extinction of spontaneous polarization above the phase transition temperature of $BaTiO_3$. The values of activation energy of peak A and peak B were calculated to be 0.70 eV and 0.87 eV respectively. From the results of TSDC measurement with a variation of polarizing electric field strength, we found that saturation of total current of TSDC was started from 3kV/cm. However, the amount of total current of TSDC was not affected by the variation of polarizing time.

• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.47-52
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• 2015

The correlation between admittance and dielectric spectroscopy of dielectric relaxation in lead scandium noibate, have been investigated. Lead scandium niobate, with composition $PbSc_{0.5}Nb_{0.5}O_3$, was prepared by conventional solid state synthesis. Conductance Y'(G), susceptance Y"(B) and capacitance C of lead scandium niobate as a function of frequency and temperature were measured. From the temperature-dependence of RLC circuit, insight into physical significance of the dielectric properties of lead scandium niobate is obtained. The relative strong frequency dependent of dielectric properties in lead scandium niobate is observed, and the phase transition occurred at a broad temperature region. Also, the value of critical exponent ${\gamma}$=1.6 showed on heating process. The long relaxation times part enlarged diffuse by conductivity effects with increasing temperature, and the ordering between $Sc^{3+}$ and $Nb^{5+}$ in PSN influences complex admittance and dielectric properties. Confirmed the typical characteristic of lead-type relaxor in the Raman spectra of lead scandium niobate and major ranges are between 400 and $900cm^{-1}$.

• Applied Science and Convergence Technology
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• v.25 no.4
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• pp.77-80
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• 2016

The $PbSc_{1/2}Nb_{1/2}O_3$ ceramics at a relatively low temperature of $1300^{\circ}C$ was successful synthesized. Solid state reaction of two-step process is not necessary. The dielectric constant, dielectric loss and admittance of ceramic samples were determined. The pyroelectric characteristics are in good agreement with the dielectric properties. Ferroelectric properties of well-formed the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics are in agreement with broad distribution of relaxation phenomenon. Relatively strong frequency dependent of dielectric constant is observed at about $110^{\circ}C$. The distinct thermal hysteresis was observed in the measurement of the dielectric constant and dielectric loss. The critical exponents of during cooling and heating measurements in the $PbSc_{1/2}Nb_{1/2}O_3$ ceramics were 1.14 and 1.59 at 1 kHz, respectively.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.48-53
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• 1996

Ion beam assisted crystallization behavior of sol-gel derived $PbTiO_3$ thin films, deposited on bare silicon(100) substrates by spin-casting method, has been investigated. Ar ion bombardment was directly conducted on the spincoated film surface with or without heating the film from room temperature to $300^{\circ}C$. Ion dose was changed from $5{\times}10^{15}$ to $7.5{\times}10^{16}$ $Ar^-/cm^2$. Formation of (110) oriented perovskite phase was obseerved with ion dose above $5{\times}10^{16}\; Ar^+/cm^2$. Crystallization of $PbTiO_3$ thin film could be enhanced with increasing the Air ion dose, or heating the substrate during ion bombardment. Crystallization of the $PbTiO_3$ films by ion bombardment was related to the local heating effect during ion bombardment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.371-374
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• 2002

Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/$SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10 % excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of n9 and dielectric loss of 1.85[%]. The BLT thin films showed little polarization fatigue test up to 3.5 x $10^{9}$ bipolar switching cycling.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.50-54
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• 1999

$(Pb_xLa_{1-x}) (Zr_yTi_{1-y})O_3$ (PLZT) thin films with electrooptic effect are promising for the optical application such as display or light shutter. However, it is difficult to use inexpensive and transparent glass substrates because the conventional process for preparation of PLZT requires temperatures above $600^{\circ}C$. In order to deposit a perovskite PLZT thin films at low processing temperatures through alkoxide route, we have offered several seeding processes which reduce the activation energy for crystallization. In this study, we optimized the stacking structure of multilayered PLZT for obtaining single phase perovskite at lower temperatures. As a result, ferroelectric PLZT thin films with different compositions were successfully prepared at a temperature as low at $500^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.621-627
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• 1996

$SrBi_{2x}TaO_9$ ferroelectric thin films were prepared on platinized silicon substrates using MOD proces, and crystallization behavior of the films was investigated with variation of the annealing temperature and Bi content x. Crystalline phase of bismuth layered perovskite structure was formed even by baking the films at $800^{\circ}C$ for 5 minutes in air, and was not changed by annealing at temperatures raning from $700^{\circ}C$ to $900^{\circ}C$ for 1 hour in oxygen ambient. When $SrBi_{2x}TaO_9$ thin films ($0.8\lex\ie1.6$) were annealed at $800^{\circ}C$, Preferred orientation of the films along c-axis was observed with $x\ge1.2$. With increasing Bi content x, surface morphology of the films was changed from equiaxed grains to elongated grains.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.110-110
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• 2009

최근 차세대 비휘발성 메모리(NVM) 기술은 메모리의 성능과 기존의 한계점을 효과적으로 극복하며 활발한 연구를 통해 비약적으로 발전하고 있으며 특히, phase-change random access memory (PRAM)은 ferroelectric random access memory (FeRAM)과 magneto-resistive random access memory (MRAM)과 같은 다른 NVM 소자와 비교하여 기존의 DRAM과 구조적으로 비슷하고 상용화가 빠르게 진행될 수 있을 것으로 예상되는 바, PRAM에 사용되는 상변화 물질의 식각을 수행하고 X-ray photoelectron spectroscopy (XPS)를 통해 표면의 열화현상을 관찰하였다.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1245-1246
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• 2006

Ferroelectric PZT (70/30) thick films were fabricated by the screen printing method. And the PZT (30/70) precusor solution were infiltrated by the spin-coating method on the PZT thick films to obtain a densification. All PZT thick films were sintered at $1050^{\circ}C$ for 10 min. Structural properties, such as crystalline structure, microstructures and compositional ratio, of PZT thick films were investigated with the variation of the number of sol coatings using XRD, SEM and EDS, respectively. All PZT thick films exhibited a perovskite polycrystalline structure without a pyrochloer phase. The thickness of PZT thick films, 4-times screen-printed, was approximately $60{\mu}m$. And the densification of the PZT thick films increased with increasing the number of sol coatings.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1537-1539
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• 1997

In this study, the dielectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ Ceramics have been investigated as a addition of the amount of $MnO_2(0{\leq}x{\leq}0.9wt%)$. The Temperature-dependant dielectric characteristics of 0.9PMN-0.1PT relaxor ferroelectric system were improved by enhencing the extent of the diffuse phase transition(DPT). The maximum dielectric permittivity decreased by substitution $MnO_2$ and the dielectric loss decreased with increasing $MnO_2$ substitution amount. It is expected decreasing in inner heat energy for temperature with increasing $MnO_2$ substitution.