• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.565-568
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• 2001

We have fabricated $Bi_{3.25}La_{0.75}Ti_{3}O_{12}(BLT)$ thin(200nm) films on the $Pt/Ti/SiO_{2}/Si$ substrates using a MOD(Metalorganic decomposition) method with annealing temperature from $550^{\circ}C$ to $750^{\circ}C$. The structural properties of the films examined by x-ray diffraction. The layered-perovskite phase obtained above $600^{\circ}C$. Scanning electron micrographs showed uniform surface composed of rodlike grains. The grain size increased with increasing annealing temperature. The BLT thin films showed little polarization fatigue test up to $3.5{\times}10^{9}$ bipolar cycling at a 5V and 100kHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.39-40
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• 2005

Ferroelectric Eu-substituted $Bi_4Ti_3O_{12}$ (BET) thin films with a thickness of 200 nm were deposited on Pt(111)/Ti/SiO$_2$/Si(100) substrate by means of the liquid delivery MOCVD system and annealed at several temperatures in an oxygen atmosphere. At annealing temperature above $600^{\circ}C$, the microstructure of layered perovskite phase was observed. The remanent polarization of these films increased with increase in annealing temperature. The remanent polarization values ($2P_r$) of the BET thin films annealed at $720^{\circ}C$ were $37.71{\mu}C/cm^2$ at an applied voltage of 5 V.

• Transactions on Electrical and Electronic Materials
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• 제11권4호
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• pp.182-185
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• 2010

$Pb_{0.99}[(Zr_{0.6}Sn_{0.4})_{0.9}Ti_{0.1}]_{0.98}Nb_{0.02}O_3$ (PNZST) thin films were deposited by radio frequency magnetron sputtering on a $(La_{0.5}Sr_{0.5})CoO_3$ (LSCO)/Pt/Ti/$SiO_2$/Si substrate using a PNZST target with an excess PbO of 10 mole%. The thin films deposited at the substrate temperature of $500^{\circ}C$ crystallized to a perovskite phase after rapid thermal annealing (RTA). The thin films, which annealed at $650^{\circ}C$ for 10 seconds in air, exhibited good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the fabricated PNZST capacitor were approximately $20uC/cm^2$ and 50 kV/cm, respectively. The reduction of the polarization after $2.2\;{\times}\;10^9$ switching cycles was less than 10%.

• 한국통신학회논문지
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• 제34권11A호
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• pp.904-908
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• 2009

The PZT(lead, zirconium, titanium) based ceramics which, are reported to be ferroelectric materials have their important applications in the areas of surface acoustic waves (SAW), filters, infrared detectors, actuators, ferroelectric random acess memory, speakers, electronic switches etc. Moreover, these PZT materials possess the large electromechanical coupling factor, large spontaneous polarization, low dielectric loss and low internal stress etc. Hence, keeping in view the unique properties of PZT piezoelectric ceramics we also tried to synthesize indigenously the small sized PZT ceramic powder in the laboratory by using the modified sol-gel approach. In this paper, Propyl alcohol based sol-gel method was used for preparation of PZT piezoelectric ceramic. The powder obtained by this sol-gel process was calcined and sintering to reach a pyrochlore-free crystal phase. The characterization of synthesized material was carried out by the XRD analysis and the surface morphology was determined by high resolution scanning electron microscopy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.565-568
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• 2001

We have fabricated $Bi_{3.25}$$La_{0.75}$ti$_3$O$_{12}$ (BLT) thin(200nm) films on the Pt/Ti/SiO$_2$/Si substrates using a MOD(Metalorganic decomposition) method with annealing temperature from 55$0^{\circ}C$ to 75$0^{\circ}C$. The structural properties of the films examined by x-ray diffraction. The layered-perovskite phase obtained above $600^{\circ}C$. Scanning electron micrographs showed uniform surface composed of rodlike grains. The grain size increased with increasing annealing temperature. The BLT thin films showed little polarization fatigue test up to 3.5x10$^{9}$ bipolar cycling at a 5V and 100kHz.kHz.

• 한국전기전자재료학회논문지
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• 제30권3호
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• pp.157-161
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• 2017

$(1-x)Bi_{0.5}(Na_{0.78}K_{0.22})_{0.5}TiO_3-xLaFeO_3$ ceramics were fabricated using a solid state reaction method. The microstructural, ferroelectric and piezoelectric properties were characterized using X-ray diffraction (XRD), scanning electron microscope (SEM), and polarization hysteresis loops (P-E). XRD results indicated that BNKT ceramic crystal structure modified by $LaFeO_3$ was transformed from a ferroelectric tetragonal to a non-polar pesudo-cubic phase with increased $LaFeO_3$ content. The improved piezoelectric properties resulted from the addition of $LaFeO_3$ up to 3 mol%. The $LaFeO_3$ 3mol% sample showed markedly improved piezoelectric and strain behaviors in comparison with pure BNKT ceramic.

• 한국재료학회지
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• 제14권10호
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• pp.701-706
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• 2004

Bismuth layered structure ferroelectric thin films, La-substituted $Bi_{4}Ti_{3}O_{12}$ ($Bi_{1-x}La_{x}Ti_{3}O_{12}$, x=0.75, BLT) were prepared on the $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin coating process. The thin films were annealed in various conditions, i.e., oxygen, nitrogen and vacuum atmospheres for various annealing time. We investigated the annealing condition effects on the grain orientation and ferroelectric properties. The measured XRD patterns revealed that the BLT thin films showed only $Bi_{4}Ti_{3}O_{12}$-type phase with random orientation. $La^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of $Bi_{4}Ti_{3}O_{12}$ decreased the degree of c-axis orientation and increased the remanent polarization ($2P_{r}$). The remanent polarization ($2P_{r}$) and the coercive field ($2E_{c}$) of the BLT thin film annealed at $650^{\circ}C$ for 5 min in oxygen atmosphere were $87{\mu}C/cm^2$ and 182 kV/cm, respectively, at an applied electric field of 240 kV/cm. For all of the BLT thin films annealed in various conditions, the fatigue resistance was shown. The improvement of ferroelectric properties with La substitution in $Bi_{4}Ti_{3}O_{12}$ could be attributed to the changes in space charge densities and grain orientation in the thin film.

• 한국전기전자재료학회논문지
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• 제11권3호
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• pp.229-236
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• 1998

Ferroelectric $Sr_xBi_yTa_2O_{9+\alpha}$/(0.7$\leqSr\leq1.0,\; 2.0\leqBi\leq2.6)$ solutions were prepared by MOD (Metalorganic Deposition) process. These solutions were made into thin films with thickness ranging from 1500~2000${\AA}$ by spin coating. The phase transformation of the SBT thin films by variation of annealing temperature and annealing time were observed using high temperature XRD and SEM. The crystallization and grain growth of SBT thin film were accomplished at $800^{\circ}C$ for 30 minutes after deposition of Pt top electrode by sputtering to prevent electrical breakdown. Ferroelectric properties of the SBT thin films were measured in the range of $\pm$3V\; and\; \pm5V$. The specimen with composition ratio of Sr/Bi/Ta (0.8/2.4/2.0) has the excellent ferroelectric properties ; $2P_r = 10.5,\; 13.2\muC/cm^2 \;at\; \pm3V\; and\; \pm5V$ respectively. Observing the post annealed Pt/SBT/Pt interface by SEM, it was found that Pt electrode sputtered on to the SBT thin film penetrated into the hollow on the SBT thin film, thus decreasing the effective insulation thickness. The effective insulation thickness recovered by post annealing, and this was confirmed by leakage current density measurement.

• 한국전기전자재료학회논문지
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• 제21권10호
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• pp.881-884
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• 2008

In this study, polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE) in the composition from 51/49, was deposited on platinum for a metal-ferroelectric-metal structure. From XRD patterns, the 70 nm- and 140 nm-thick PVDF-TrFE films showed the intensity peak of near $20^{\circ}$ connected to a ferroelectric phase. Moreover, the thicker film indicated the higher intensity than thinner one. The difference of the remanent polarization (2Pr) at 0 V is decreased gradually from 10.19 to $5.7{\mu}C/cm^2$ as the thickness decrease from 140 to 70 nm. However, when the thickness decreased to 50 nm, the 2Pr rapidly drop to $1.6{\mu}C/cm^2$ so the minimum critical thickness might be at least 70 nm for device. Both different thickness films, 70 and 140 nm, indicated that the characteristic of current density-voltage was measured for $10^{-6}{\sim}10^{-7}A/cm^2$ below 15 V and the thicker film maintained relatively lower current density than thinner one. From these results, we can expect that the electrical properties for the devices particularly ferroelectric thin film transistor using PVDF-TrFE copolymer were able to be on the trade-off relationship between the remanent polarization with the bias voltage and the leakage current.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.168-171
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• 2003

Bismuth layered structure, Cerium-substituted $Bi_4Ti_3O_{12}$ ($(Bi,Ce)_4Ti_3O_{12}$) thin films were prepared on the $Pt/TiO_2/SiO_2/Si$ substrates by the pulsed laser deposition method. We investigated the Ce-subsitituted effect on the grain orientation and ferroelectric properties. $Ce^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of BTO decreased the deeree of c-axis orientation and increased the remanent polariation (2Pr). The structure and morphology of the films were characterized using X-ray diffraction and atomic force microscopy. The $(Bi,Ce)_4Ti_3O_{12}$ (BCT) thin films, which were annealed $700^{\circ}C\;and\;800^{\circ}C$ for 10min and 30min, showed a perovskite phase and dense microstructure. As the thickness of the BCT film was decresed that the ferroelectric properties of the BCT thin films were good.