• 한국정밀공학회지
• /
• 제22권2호
• /
• pp.113-119
• /
• 2005

A crack emanating from an internal electrode or a conducting damage path in ferroelectric ceramic actuators is analyzed. The boundary of the domain switching zone near the edge of the internal electrode in a ceramic multilayer actuator is determined based on the nonlinear electric theory. The stress intensity factor induced by a ferroelectric domain switching under small scale conditions is numerically obtained for flaws of various sizes near the electrode edge. It is found that stress intensity factor near the crack tip depends on the material property of the electrical nonlinearity.

• The Korean Journal of Ceramics
• /
• 제4권4호
• /
• pp.286-291
• /
• 1998

Dielectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$, ceramics prepared by the columbite precursor method have been investigated as a function of the sintering temperature in the range of 1000∼$1250^{\circ}C$. The $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$ ceramics show typical relaxor ferroelectric behavior. As the sintering temperature increased, the dielectric constant increased and the phase transition temperature shifted to lower temperature. The TCK(temperature coefficient of dielectric constant) and VRK (variation rate of dielectric constant) increased with increasing sintering temperature. The $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$ compositions sintered at $1250^{\circ}C$ appear to be suitable for ferroelectric bolometer.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
• /
• pp.180-180
• /
• 2003

FRAM (Ferroelectric Random Access Memory)은 DRAM(Dynamic Random Access Memory)in 커패시터 재료을 상유전체 물질에서 강유전체 물질로 대체하여 전원 공급이 차단되어도 정보를 기억할 수 있고, 데이터의 고속처리가 가능하고 저소비전력과 집적화가 뛰어난 차세대 메모리 소자이다. 본 연구에서는 n-Well/P-Si(100) 기판위에 $Y_2$O$_3$ 박막을 중간층 (buffer layer)으로 사용하여 (Bi,La) Ti$_3$O$_{12}$ (BLT) 강유전체 박막을 졸-겔 방법으로 형성하여 MFM(I)S(Metal Ferroelectric Metal (Insulation) Silicon) 구조의 커패시터 및 전계효과형 트랜지스터(Field Effect Transistor) 소자를 제작하였다. 제작된 소자에 대해 형상학적, 전기적 특성을 조사, 분석하였다.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2003년도 추계학술대회
• /
• pp.1206-1210
• /
• 2003

Effect of transverse electric field on crack kinking in ferroelectric ceramics subjected to purely electric loading is investigated. It is shown that the shape and size of the domain switching zone depends strongly on the direction of the applied electric field as well as the ratio of the transverse electric field to the coercive electric field. Under small-scale conditions, mode I and II stress intensity factors induced by ferroelectric domain switching are numerically obtained. The crack kinking in ferroelectrics is also discussed.

• 한국전기전자재료학회논문지
• /
• 제29권3호
• /
• pp.164-167
• /
• 2016

In this study, in order to develop relaxor ferroelectric ceramics for refrigeration device application with large electrocaloric effect, PLZT(8/65/35) composition was fabricated using conventional solid-state method. The Curi temperature of this composition PLZT ceramics was $230^{\circ}C$, and the P-E hysteresis loops of the PLZT ceramics as a fuction of temperature became slim by degrees with higher temperatures. The maximum value of ${\Delta}T$ of $0.243^{\circ}C$ in ambient temperature of $215^{\circ}C$ with 30 kV/cm was appeared. It is considered that PLZT ceramics possess the possibility of refrigeration device application.

• 한국전기전자재료학회논문지
• /
• 제20권3호
• /
• pp.223-227
• /
• 2007

The effect of Eu contents on the ferroelectric properties of $Bi_{4-x}Eu_xTi_3 O_{12}$ (BET) thin films has been investigated. Bismuth Europium titanate thin films with a Eu contents were prepared on the $Pt/Ti/SiO_2/Si$ substrate by metal-organic decomposition technique. The structure and the morphology of the films were analyzed using X-ray diffraction (XRD) and field emission scanning microscopy (FE-SEM), respectively. From the XRD analysis, it was found that BET thin films have polycrystalline structure, and the layered-perovskite phase is obtained when the Eu contents exceeds 0.2 (x > 0.2). Also, the ferroelectric characteristics of the BET thin films were found to be dependent on the Eu content. Particularly, the BET films doped with x = 0.75 show better ferroelectric properties (remanent polarization 2Pr = 60.99 C/$cm^2$ and only a little polarization fatigue up to $3.5{\times}10^9$ bipolar switching cycling) than those doped with other Eu contents.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.290-291
• /
• 2006

The effect of praseodymium substitution on the ferroelectric properties of $Bi_4Ti_3O_{12}$ thin films have been investigated. Ferroelectric Pr-substituted $Bi_4Ti_3O_{12}$ thin films were fabricated by chemical solution deposition onto Pt/Ti/$SiO_2$/Si substrates. The structure and morphology of the films were analyzed using Xray diffraction, and scanning electron microscopy, respectively. About 200-nm-thick BPT films grown at $720^{\circ}C$ exhibited a polycrystalline structure and showed excellent ferroelectric properties with a remanent polarization ($2P_r$) of $28.21\;{\mu}C/cm^2$ at an applied voltage of 5 V. The films a1so demonstrate fatigue-free behavior up to $10^{11}$ read/write switching cycles with 1 MHz bipolar pulses at an electric field of ${\pm}5\;V$.

• 센서학회지
• /
• 제23권4호
• /
• pp.224-228
• /
• 2014

The electrocaloric effect of 9/65/35 PLZT thin film fabricated by the sol-gel method, which has not been studied yet, was investigated for its structural, electrical properties as well as temperature change property. The relaxor ferroelectric property of 9/65/35 PLZT thin film was confirmed by examining its dielectric and electrical properties. The relaxor property can cause a more pronounced electrocaloric effect (ECE) in a wider temperature range than normal ferroelectric film. To avoid errors caused by using an indirect measurement method, the leakage current generated by increasing temperatures was minimized by using the optimal maximum electric field ($350kVcm^{-1}$) in the thin film. The largest temperature change ${\delta}T$ (0.23 K) and the electrocaloric strength ${\xi}$ (0.68 mkcm/kV), calculated by equations were obtained. The maximum field change ${\delta}E$ ($191kVcm^{-1}$) was in the vicinity of the curie temperature ($200^{\circ}C$).

• 전기학회논문지
• /
• 제67권4호
• /
• pp.543-548
• /
• 2018

Ferroelectric $Bi_4Ti_3O_{12}$ films were deposited on $SrTiO_3(100)$ and Si(100) substrate by using conductive $SrRuO_3$ films as underlayer, and their ferroelectric and electrical properties were investigated depending on crystal structure and orientation. C-axis oriented $Bi_4Ti_3O_{12}$ films were grown on well lattice-matched pseudo-cubic $SrRuO_3$ films deposited on $SrTiO_3(100)$ substrate, while random-oriented polycrystalline $Bi_4Ti_3O_{12}$ films were grown on $SrRuO_3$ films deposited on Si(100) substrate. The random-oriented polycrystalline film showed a good ferroelectric hysteresis property with remanent polarization ($P_r$) of $9.4{\mu}C/cm^2$ and coercive field ($E_c$) of 84.9 kV/cm, while the c-axis oriented film showed $P_r=0.64{\mu}C/cm^2$ and $E_c=47kV/cm$ in polarizaion vs electric field curve. The c-axis oriented $Bi_4Ti_3O_{12}$ film showed a dielectric constant of about 150 and lower thickness dependence in dielectric constant compared to the random-oriented film. Furthermore, the c-axis oriented $Bi_4Ti_3O_{12}$ film showed leakage current lower than that of the polycrystalline film. The difference of ferroelectric properties in two films was explained from the viewpoint of depolarization effect due to orientation of spontaneous polarization and layered crystal structure of bismuth-base ferroelectric oxide.

• 한국세라믹학회지
• /
• 제39권1호
• /
• pp.92-98
• /
• 2002

Pb(Zr$_{0.8}$Ti$_{0.2}$)O$_3$강유전체 음극의 상부 전극 크기를 변화시키며(500$mu extrm{m}$~900$\mu\textrm{m}$)비대칭 전극 구조에서의 전자 방출에 대하여 연구하였다. 펄스 전기장을 가했을 때 나타나는 분극 반전에 의한 전류 밀도는 상부 전극 크기를 감소시킴에 따라 증가하였다. 이것은 비대팅 전극 구조에 의해 강유전체 표면에서 stray-field가 발생하고, stray field가 전극의 모서리 부근의 강유전체 표면 하부에도 분극 반전을 발생시켰기 때문이다. 전기장 전산모사를 통하여 이러한 stay-field의 존재 가능성을 예측할 수 있었고, 분극 반전에 의한 전류 밀도 측정 결과 stray-field가 미치는 거리는 약 11-l4$\mu\textrm{m}$이었다. 전자방출의 문턱전계는 항전계 의 약 3배인 61-68kV/cm이었으며, 문턱전계가 단순히 강유전체의 항전계에 의해 결정되는 것이 아니라, 강유전 음극의 구조에 의해 결정되는 stray-field의 세기와 stray-field가 미치는 거리에 영향을 받음을 전산모사를 통해 예측할 수 있었다.