• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.66-66
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• 2007

Lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for ferroelectric random access memory (FRAM) due to its higher remanant polarization and the ability to withstand higher coercive fields. We first applied the damascene process using chemical mechanical polishing (CMP) to fabricate the PZT thin film capacitor to solve the problems of plasma etching including low etching profile and ion charging. The $0.8{\times}0.8\;{\mu}m$ square patterns of silicon dioxide on Pt/Ti/$SiO_2$/Si substrate were coated by sol-gel method with the precursor solution of PZT. Damascene process by CMP was performed to pattern the PZT thin film with the vertical sidewall and no plasma damage. The polarization-voltage (P-V) characteristics of PZT capacitors and the current-voltage characteristics (I-V) were examined by change of process parameters. To examine the CMP induced damage to PZT capacitor, the domain structure of the polished PZT thin film was also investigated by piezoresponse force microscopy (PFM).

• Journal of Electrical Engineering and Technology
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• v.2 no.3
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• pp.391-395
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• 2007

MgO enhanced $(Ba_{0.6}Sr_{0.4})$ $TiO_3$ thick films have been fabricated by a tape casting and firing method for tunable devices on the microwave frequency band. In order to improve ferroelectric properties, the composite thick films enhanced with MgO on BST have been asymmetrically annealed by a focused halogen beam method. Dielectric constants of composite thick films are changed from 1050 to 1300 at 100 kHz after 60 s and 150 s annealing by the focused halogen beam. Even though no prominent changes were previously observed from the thick films before and after annealing in terms of chemical composition and surface morphology, it is clear that the average particle size of the thick films calculated by Scherrer's formula were increased by annealing. Furthermore, a strong correlation between particle size and dielectric constant of the composite thick films has been observed; dielectric constant increases with increased particle size. This has been attributed to the increased volume of ferroelectric domain due to increased particle sizes. As a result, the tuning range was improved by halogen beam annealing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.3
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• pp.124-127
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• 2005

It is demonstrated that the annealing process for Ti in-diffusion to z-cut $LiNbO_3$ at temperature lower than the curie temperature in a platinum (Pt) box can cause a ferroelectric micro-domain inversion at the +z surface and Li out-diffusion, therefore which should be avoided or suppressed for waveguide type periodically poled lithium niobate (PPLN) devices. The depth of the inversion layer depends on the Ti-diffusion conditions such as temperature, atmosphere, the sealing method of $LiNbO_3$ in the Pt box and crystal orientation is experimentally examined. The result shows that the polarization-inverted domain boundary appears at the only +z surface and its thickness is about $1.6{\mu}m$. Also, for the etched $LiNbO_3$, surface the domain shape was observed by the optical microscope and atomic force microscopy (AEM), and distribution of the cation concentrations in the $LiNbO_3$ crystal by the secondary ion mass spectrometry (SIMS).

• Journal of electromagnetic engineering and science
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• v.10 no.3
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• pp.158-165
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• 2010

This study reviewed terahertz technologies of time domain spectroscopy, T-ray imaging, and high rate wireless data transfer. The main topics of the terahertz research area were investigation of materials and package modules for terahertz wave generation and detection, and setup of the terahertz system for time domain spectroscopy(TDS), T-ray imaging and sub-THz wireless communication. In addition to Poly-GaAs film as a photoconductive switching antenna material, a table-top scale for the THz-TDS/imaging system and terahertz continuous wave(CW) generation systems for sub-THz data transfer and narrow band T-ray imaging were designed. Dielectric properties of ferroelectric BSTO($Ba_xSr_{1-x}TiO_3$) films and chalcogenide glass systems were characterized with the THz-TDS system at the THz frequency range. Package modules for terahertz wave transmitter/receiver(Tx/Rx) photoconductive antenna were developed.

• Korean Journal of Optics and Photonics
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• v.19 no.6
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• pp.408-415
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• 2008

The characteristics of a ferroelectric-domain inverted grating fabricated by applying a high-voltage pulse at room temperature in Ti-diffused channel waveguides in z-cut $LiNbO_3$ (Ti:PPLN) were examined for channel waveguide quasi phase-matched secondharmonic generation devices. The fabrication conditions of uniform periodic domain-inversion were examined. Ti:PPLN with period ${\Lambda}=16.6{\mu}m$ for SHG were fabricated and the performances were measured. A normalized SHG efficiency as high as 473 (%/W) was obtained with 49 mm interaction length.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.562-566
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• 2001

The effects of MnO$_2$ addition on the properties in Pb(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ relaxor ferroelectrics were studied in the phase transition temperature range from -4$0^{\circ}C$ to 11$0^{\circ}C$. Specimens were made via solid state processing method. Dielectric properties, piezoelctric properties, electric-field-induced strain were examined to clarify the effect of MnO$_2$ addition in 0.9MN-0.1PT. As the amount of MnO$_2$ increases, the maximum dielectric constant and the dielectric loss decreases. Q$_{m}$ increased by increasing the doping contents of Mn. When 0.5wt% MnO$_2$ was doped, Q$_{m}$ increased from 95 to 480. The electric-filed-induced strain and polarization decreases as the amount of MnO$_2$ increases. From the experimental results, it was suggested that Mn behaves as an ferroelectric domain pinning element.ent.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.141-153
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• 1997

The paraelectric cubic-to-ferroelectric tetragonal phase transition of the thin Pb(Zr, Ti)$O_3$ (PZT) films grown on MgO(001) substrate was investigated in a series of synchrotron x-ray scattering experiments. As the thickness of the film decreases the transition temperature and the amount of the tetragonal distortion were decreased continuously Different from only the c-domains were existent in the thinnest 25nm thick film. Based on this we propose a model for the domain structure of the tetragonal PZT/MgO(100) film that is very different from the ones suggested in literature. We attribute the suppression of the transition to the substrate field that prefers the c-type domains near the interface and suppresses the tetragonal distortion to minimize the film-substrate lattice mismatch.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.250-250
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• 2009

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.1
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• pp.70-75
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• 1992

A model for a microstructural residual stress in a ferroelectric material is proposed. Based on this model, two facts are estimated. One of them is that the residual stress on a grain boundary is larger than that on a domain boundary. Another one is that the microstructural residual stress decrease with increasing grain size. These facts are confirmed by the microcrack morphology and the dependence of dielectric constant hysteresis between heating and cooling on grain size in $PbZr_{0.4}Ti_{0.6}O_3$ ceramics.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1274-1276
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• 1994

A study on $BaTiO_3$ ceramics have been shown that dielectric properties of $BaTiO_3$ ceramics strongly depend on the size and ferroelectric domain density of the constituting grain. According to rising substrate temperature from $25[^{\circ}C]$ to $600[^{\circ}C]$, the peak intensity and crystal plane in XRD are increased. In this study, $BaTiO_3$ thin film prepared by RF sputtering from room temperature to $600[^{\circ}C]$ of substrate temperature. Therefore, we tried to investigate the relation between the characteristics of ceramics structure and dielectric factor.