• Korean Journal of Materials Research
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• v.21 no.7
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• pp.391-395
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• 2011

The structure and dielectric properties of poled <001>-oriented 0.7Pb($Mg_{1/3}Nb_{2/3})O_3-0.3PbTiO_3$ (PMN-0.3PT) crystals have been investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric field induced monoclinic phase was observed for the initial poled sample. The phase remained stable after the field was removed. A quite different temperature dependence of dielectric constant has been observed between heating and cooling due to an irreversible phase transformation. The results of mesh scans and temperature dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase at 370K and to a paraelectric cubic phase at 405K upon heating. However, upon subsequent cooling from the unpoled state, the cubic phase changes to a poly domain tetragonal phase and to a rhombohedral phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that of the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary and at the phase transition temperature.

• Journal of the Korean institute of surface engineering
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• v.53 no.6
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• pp.330-342
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• 2020

Since the original report on ferroelectricity in Si-doped HfO2 in 2011, fluorite-structured ferroelectrics have attracted increasing interest due to their scalability, established deposition techniques including atomic layer deposition, and compatibility with the complementary-metal-oxide-semiconductor technology. Especially, the emerging fluorite-structured ferroelectrics are considered promising for the next-generation semiconductor devices such as storage class memories, memory-logic hybrid devices, and neuromorphic computing devices. For achieving the practical semiconductor devices, understanding polarization switching kinetics in fluorite-structured ferroelectrics is an urgent task. To understand the polarization switching kinetics and domain dynamics in this emerging ferroelectric materials, various classical models such as Kolmogorov-Avrami-Ishibashi model, nucleation limited switching model, inhomogeneous field mechanism model, and Du-Chen model have been applied to the fluorite-structured ferroelectrics. However, the polarization switching kinetics of fluorite-structured ferroelectrics are reported to be strongly affected by various nonideal factors such as nanoscale polymorphism, strong effect of defects such as oxygen vacancies and residual impurities, and polycrystallinity with a weak texture. Moreover, some important parameters for polarization switching kinetics and domain dynamics including activation field, domain wall velocity, and switching time distribution have been reported quantitatively different from conventional ferroelectrics such as perovskite-structured ferroelectrics. In this focused review, therefore, the polarization switching kinetics of fluorite-structured ferroelectrics are comprehensively reviewed based on the available literature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.98-102
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• 2002

We investigated domains and conoscope under the polarizing microscope and the index of refraction on the c-plate GMO which has the ferroelectric and ferroelastic phase at room temperature. To observed the change of refractive index in connection with domain, we developed an apparatus to obtain the refractive index by measuring the Brewster's angle. The resolution of the minimum rotation angle of this apparatus is $0.001^{\circ}$. To obtain the refractive index map on the sample, the moving distance of XY stage loaded sample holder is 60 mm and the minimum moving distance is 0.002 mm. Also, To obtain the indicatrix for single crystal, vertical turntable with sample holder and XY stage was loading on horizontal turntable. The minimum resolution angle of this vertical turntable is $0.001^{\circ}$. We measured the refractive index of transparent materials such as ferroelectrics. In the case of $Gd_{2}(MoO_{4})_{3}$, the Brewster angle is $62.11^{\circ}$ and then, the refractive index is 1.8895 by using He-Ne Laser. Also the refractive distribution of c-plate GMO was obtained with $400{\mu}m{\times}120{\mu}m$.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.65-73
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• 1992

The effect of grain size on the time-dependent piezoelectrice degradation of a poled PZT of MPB composition Pb0.988Sr0.012 (Zr0.52Ti0.48)O3 with 2.4 mol% of Nb2O5 was studied, and the degradation mechanism was discussed. Changes in the internal bias field and the internal stress both responsible for the time-dependent degradation of poled PZT were examined by the polarization reveral technique, XRD and Vickers indentation, respectively. The piezoelectric degradation increased with increasing time and grain size, and the internal bias field due to space charge diffusion decreased with increasing grain size of poled PZT. The internal bias field, however, was almost insensitive to the degradation time regardless of the grain size. On the other hand, both the x-ray diffraction peak intensity ratio of (002) to (200) and the fracture behavior including the crack propagation support that the ferroelectric domain rearrangement of larger grain size showed rapid relaxation of the internal stress compared with smaller one, which is thought the origin of the larger piezoelectric degradation in the former. In conclusion, the contribution of space charge diffusion on the piezoelectric degradation of PZT is strongly dependent on both the grain size and the composition. Thus, the relaxation of internal stress due to the ferroelectric domain rearrangement as well as the amount and time-dependence of the internal bias field due to space charge diffusion should be considered simultaneously in the degradation mechanism of PZT.

• Corrosion Science and Technology
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• v.7 no.6
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• pp.307-314
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• 2008

The influence of a moist atmosphere on $90^{\circ}$ domain switching under a sustained electric field, stress corrosion cracking of an indentation crack in water and an aggressive solution, and the relation between penetrating crack propagation and domain switching were studied using $BaTiO_3$ single crystal. The results indicate that enlarging the domain switching zone and crack propagation could be facilitated by a moist atmosphere or an aggressive solution due to the indentation residual stress. A moist atmosphere exerts remarkable influence upon the polarization of $BaTiO_3$ single crystal under a sustained electric field, and the surface energy of the c domain was much lower than that of the a domain. Domain switching ahead of a penetrating indentation crack tip was an essential requirement for crack propagation under constant stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.86-89
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• 2003

SBT thin film for semiconductor device that is made by RF magnetron sputtering method studied electrical properties under various temperature condition. Dielectric constant who differ annealing condition appears highest in $750[^{\circ}C]$ and it is 213. Also, C-V properties by annealing temperature of SBT thin film for semiconductor device is no change almost to $600[^{\circ}C]$ and shows non-linear butterfly shape more than $650[^{\circ}C]$ Maximum capacitance and difference of smallest capacitance show the biggest difference in $750[^{\circ}C]$ as degree that domain wall motion contributes in ferrelectric polarization value in C-V characteristic curve of ferroelectric that this shows typical ferroelectric properties. Therefore, SBT thin film for semiconductor device that is annealing in $750[^{\circ}C]$ expressed the most superior electrical and ferroelectric properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.12
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• pp.1118-1122
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• 2006

In this study, in order to develop the low temperature sintering multilayer piezoelectric actuator, PMN-PNN-PZT system ceramics were manufactured and their microstructure, ferroelectric and piezoelectric properties were investigated. By increasing sintering temperature, remanent polarization$(P_r)$ was increased due to the increase of sinterability and grain size. However, coercive $field(E_c)$ showed an opposite tendency to remanent polarization owing to the feasibility of domain wall motion. At the sintering temperature of $900^{\circ}C$, dielectric $constant({\varepsilon}_r)$, electromechanical coupling $factor(k_p)$, piezoelectric $constant(d_{33})$ and mechanical quality $factor(Q_m)$ showed the optimal value of 1095, 0.60, 363 and 1055, respectively, for multilayer piezoelectric actuator application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.13-16
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• 1988

In this paper, image storage and display of scattering mode using 7/65/35 PLZT ceramics was studied. Scattering in a ferroelectric poly-crystal depends on its grain size and domain orientations. 7/65/35 PLZT ceramics is ferroelectric and transparent. Image can be stored in the ceramic substrate by poling it selectively through a pair of electrodes with the pattern or a set of a photoconductivity film and two transparent electrodes.

• Journal of the Korean Ceramic Society
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• v.54 no.4
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• pp.261-271
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• 2017

Environment-friendly $(K,Na)NbO_3-based$ (KNN) lead-free piezoelectric materials have been studied extensively in the past decade. Significant progress has been made in this field, manifesting competitive piezoelectric performance with that of lead-based, for specific application scenarios. Further understanding of the relationship between high piezoelectricity and microstructure or more precisely, ferroelectric domain structure, domain wall pinning effect, domain wall conduction and local polarization switching underpins the continuous advancement of piezoelectric properties, with the help of piezoresponse force microscopy (PFM). In this review, we will present the fundamentals of scanning probe microscopy (SPM) and its cardinal derivative in piezoelectric and ferroelectric world, PFM. Some representative operational modes and a variety of recent applications in KNN-based piezoelectric materials are presented. We expect that PFM and its combination with some newly developed technology will continue to provide great insight into piezoelectric materials and structures, and will play a valuable role in promoting the performance to a new level.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.342-345
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• 2012

The dielectric properties and phase transformation of poled <001>-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$(PMN-x%PT) single crystals with compositions of x = 20, 30, and 35 mole% are investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric-field-induced monoclinic phase was observed for the initial poled PMN-30PT and PMN-35PT samples by means of high-resolution synchrotron x-ray diffraction. The monoclinic phase appears from $-25^{\circ}C$ to $100^{\circ}C$ and from $-25^{\circ}C$ to $80^{\circ}C$ for the PMN-30PT and PMN-35PT samples, respectively. The dielectric constant (${\varepsilon}$)-temperature (T) characteristics above the Curie temperature were found to be described by the equation$(1/{\varepsilon}-1/{\varepsilon}_m)^{1/n}=(T-T_m)/C$, where ${\varepsilon}_m$ is the maximum dielectric constant and $T_m$ is the temperature giving ${\varepsilon}_m$, and n and C are constants that change with the composition. The value of n was found to be 1.82 and 1.38 for 20PT and 35PT, respectively. The results of mesh scans and the temperature-dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase and a to paraelectric cubic phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that measured in the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary.