• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.34-39
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• 2008

We have investigated the characteristics of $Al_{0.55}Ga_{0.45}N$/GaN heterostructures with and without low-temperature (LT) AlN interlayer grown by metalorganic chemical vapor deposition. The structural and optical properties were systematically studied by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), optical microscopy (OMS), scanning electron microscopy (SEM), and photoluminescence (PL). The Al content (x) of 55% and the structural properties of $Al_xGa_{1-x}N$/GaN heterostructures were investigated by using RBS and XRD, respectively. We carried out OMS and SEM experiments and obtained a decrease of the crack network in $Al_{0.55}Ga_{0.45}N$ layer with LT-AlN interlayer. A two-dimensional electron gas (2DEG)-related PL peak located at ${\sim}3.437eV$ was observed at 10 K for $Al_{0.55}Ga_{0.45}N$/GaN with LT-AlN interlayer. The 2DEG-related emission intensity gradually decreased with increasing temperature and disappeared at temperatures around 100 K. In addition, with increasing the excitation power above 3.0 mW, two 2DEG-related PL peaks were observed at ${\sim}3.411$ and ${\sim}3.437eV$. The observed lower-energy and higher-energy side 2DEG peaks were attributed to the transitions from the sub-band level and the Fermi energy level of 2DEG at the AlGaN/LT-AlN/GaN heterointerface, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.400-401
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• 2012

그래핀(Graphene)은 열 전도도가 높고 전자 이동도(200 000 cm2V-1s-1)가 우수한 전기적 특성을 가지고 있어 전계 효과 트랜지스터(Field effect transistor; FET), 유기 전자 소자(Organic electronic device)와 광전자 소자(Optoelectronic device) 같은 반도체 소자에 응용 가능하다. 그러나 에너지 밴드 갭이 없기 때문에 소자의 전기적 특성이 제한되는 단점이 있다. 최근에는 아크 방출(Arc discharge method), 화학적 기상 증착법(Chemical vapor deposition; CVD), 이온-조사법(Ion-irradiation) 등을 이용한 이종원자(Hetero atom)도핑과 화학적 처리를 이용한 기능화(Functionalization) 등의 방법으로 그래핀을 도핑 후 에너지 밴드 갭을 형성시키는 연구 결과들이 보고된 바 있다. 그러나 이러한 방법들은 표면이 균일하지 않고, 그래핀에 많은 결함들이 발생한다는 단점이 있다. 이러한 단점을 극복하기 위해 자가조립 단층막(Self-assembled monolayers; SAMs)을 이용하여 이산화규소(Silicon oxide; SiO2) 기판을 기능화한 후 그 위에 그래핀을 전사하면 그래핀의 일함수를 쉽게 조절하여 소자의 전기적 특성을 최적화할 수 있다. SAMs는 그래핀과 SiO2 사이에 부착된 매우 얇고 안정적인 층으로 사용된 물질의 특성에 따라 운반자 농도나 도핑 유형, 디락 점(Dirac point)으로부터의 페르미 에너지 준위(Fermi energy level)를 조절할 수 있다[1-3]. 본 연구에서는 SAMs한 기판을 이용하여 그래핀의 도핑 효과를 확인하였다. CVD를 이용하여 균일한 그래핀을 합성하였고, 기판을 3-Aminopropyltriethoxysilane (APTES)와 Borane-Ammonia(Borazane)을 이용하여 각각 아민 기(Amine group; -NH2)와 보론 나이트라이드(Boron Nitride; BN)로 기능화한 후, 그 위에 합성한 그래핀을 전사하였다. 기판 위에 NH2와 BN이 SAMs 형태로 존재하는 것을 접촉각 측정(Contact angle measurement)을 통해 확인하였고, 그 결과 NH2와 BN에 의해 그래핀에 도핑 효과가 나타난 것을 라만 분광법(Raman spectroscopy)과 X-선 광전자 분광법(X-ray photoelectron spectroscopy: XPS)을 이용하여 확인하였다. 본 연구 결과는 안정적이면서 패턴이 가능하기 때문에 그래핀을 기반으로 하는 반도체 소자에 적용 가능할 것이라 예상된다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.3 no.1
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• pp.18-25
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• 1978

The 1/f noise spectrum of short-circuited output drain current due to the Shockley-Read-Hal] recombination centers with a single lifetime in homogeneous nondegenerate MOS-field effcte transtors with n-type channel is calculated under the assumptions that the quasi-Fermi level for the carriers in each energy band can not be defined if we include the fluctuation for time varying quantities. and so 1/f noise is a majority carrier effect. Under these assumptions the derived 1/f noise in this paper show some essential features of the 1/f noise in MOS-field effect transistors. That is, it has no lowfrequency plateau and is proportionnal to the channel cross area A and to the driain bias voltage Vd and inversely proportional to the channel length L3 in MOS field effect transistors. This model can explain the discrepancy between the transition frequency of the noise spectrum from 1/f- response to 1/f2 and the frequency corresponding to the relaxation time related to the surface centers in p-n junction diodes. In this paper the results show that the functional form of noise spectrum is greatly influenced by the functional forms of the electron capture probability cn (E) and the relaxation time r (E) for scattering and the case of lattice scattering show to be responsible for the 4 noise in MOS fold effect transistors. So we canconclude that the source of 1/f noise is due to lattice scattering.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.293-299
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• 1998

We have investigated the atomic and electronic structures of Cu-adsorbed Si(100)-2$\times$1 surface, by using LEED and UPS. In the UPS spectra, the weak structures (peaks) related to Cu silicide appeared for low coverages less than 1.3 ML at room temperature, and the intensity of Cu 3d band rapidly increased with respect to Cu coverages. The Cu silicide peaks become clear after Cu deposition at room temperature followed by high temperature annealing ($\geq 300^{\circ}C$) or for Cu deposited surface at the substrate temperature of $400^{\circ}C$. On the other hand, these structures disappeared by annealing at $750^{\circ}C$. At very low coverage, a surface state near Fermi level $(E_F)$ was observed at $400^{\circ}C$. According to the rigid band model, it seems to be originated from the surface empty state occupied partially with Cu 4s electron. In the LEED patterns, no Cu-induced superstructure observed for RT-depositions and post annealing, while there were several surface structures which depend on substrate temperatures and coverages. we observed the clean surface 2$\times$1+2$\times$2 phase for 1.5 ML at $400^{\circ}C$, the clean surface 2$\times$1+5$\times$1 phase for 0.5 ML at $450^{\circ}C$ and the clean surface 2$\times$1+2$\times$2+5$\times$2+5$\times$5+10$\times$2 mixed phases for 3 ML at $450^{\circ}C$.

• Journal of the Korean Magnetics Society
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• v.26 no.6
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• pp.179-184
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• 2016

For an industrial spin-transfer torque (STT) MRAM, low switching current and high thermal stability are required, simultaneously. For this point of view, it is essential to find magnetic materials which satisfy high spin polarization and strong perpendicular magnetocrystalline anisotropy (MCA). In this paper, we investigate electronic structures and MCA energies of perovskite $CoFeX_3$ (X = O, F, S, Cl). For X = F and Cl, spin polarization at the Fermi level are 97 % and 96 %, respectively, which are close to a half metal. Furthermore, Co-terminated 5-monolayer (ML) $CoFeX_3$ (X = O, F, S, Cl) films show perpendicular MCA. In particular, the MCA energy of the Co-terminated $CoFeCl_3$ is about 1.0 meV/cell which is three times larger than that of a 5-ML CoFe film. Therefore, we expect to realize a magnetic material with high spin polarization and strong perpendicular MCA energy by utilizing group 6 and 7 elements in the periodic table, and to contribute to commercializing of the STT-MRAM.

• Journal of the Korean Magnetics Society
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• v.23 no.1
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• pp.1-6
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• 2013

Spin-orbit coupling (SOC) effect is known to be the physical origin for various exotic magnetic phenomena in the low-dimensional systems. Recently, SOC also draws lots of attention in the study on magnetically doped thermoelectric alloys to determine their properties as the thermoelectric application as well as the topological insulator via the exact electronic structures determination near the Fermi level. In this research, aiming to investigate the spin-orbit coupling effect on the structural properties such as the lattice constants and the bulk modulus of the most widely investigated thermoelectric host material, $Bi_2Te_3$, we carried out the first-principles electronic structure calculation using the all-electron FLAPW (full-potential linearized augmented plane-wave) method. Employing both the local density approximation (LDA) and the generalized gradient approximation (GGA), the structural optimization is achieved by varying the in-plane lattice constant fixing the perpendicular lattice constant and vice versa, to find that the SOC effect increases the equilibrium lattices slightly in both directions while it markedly reduces the bulk modulus value implying the strong orientational dependence, which are attributed to the material's intrinsic structural anisotropy.

• Korean Journal of Optics and Photonics
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• v.33 no.1
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• pp.28-34
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• 2022

We study through computational simulation the focal performance of an infrared (IR) Fresnel lens, composed of a multilayer-graphene zone plate formed under a graphene electrode. Here the Fermi level E_F of the patterned multilayer graphene is adjusted by the overlying graphene electrode. The Fresnel lens effect, with respect to the reflectance contrast between the graphene electrode and the 8-layer graphene zone plate placed on a glass substrate, has been analyzed over a broad wavelength range from 4 to 30 ㎛. As the optimal wavelength of 8 ㎛ (considering the reflectance and the reflectance-contrast ratio) is incident upon the Fresnel lens with a focal length of 240 ㎛, the focal intensity is enhanced by a factor of 4.3 as the E_F of multilayer graphene increases from 0.4 eV to 1.6 eV, and is improved by a factor of 5.8 as the number of graphene layers increases from two to eight. As a result, an all-graphene-based IR Fresnel zone-plate lens, exhibiting multifocal function (240 ㎛ and 360 ㎛) according to the selected E_F, is proposed as an ultrathin lens platform.