• Korean Journal of Materials Research
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• v.12 no.7
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• pp.560-567
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• 2002

Titanium (Ti) is a bioinert material and has lower elastic coefficient and better strength/volume property than other metals. Ferroelectric materials show alignment of positive and negative charges by poling treatment. This study was purposed to develop a new implant system by combining the advantages of Ti and ferroelectric property of $BaTiO_3$ (BTO). It was performed with the assumption that the $Ca^{2+ }$ ions would be easily attracted on negatively charged surface and the attracted cation might behave as nuclei for bone-like crystal growth in biological solutions. A ferroelectric BTO thin film on Ti was fabricated and the effect of poling treatment on the improvement of calcium phosphate (Ca-P) formation in biological solutions was evaluated. After immersion in Eagle’s minimum essential media (MEM) solution, NaCl was formed on Ti, and Ca-P layer containing NaCl was formed on Ti-O. Weak and sparse Ca-P layers were formed on BTO, while thick, homogeneous, and dense Ca-P layer was formed on negatively polarized BTO (N-BTO), which was confirmed by FE-SEM and EDX. In summary, these results demonstrate that poling the ferroelectric BTO surface negatively is effective for the formation of Ca-P layer in MEM solution, and that N-BTO coating on Ti could be used as a possible alternative method for enhancing the osseointegration of the implants.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.7
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• pp.33-39
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• 2015

In this work, SU-8 passivated IZO thin-film transistors(TFTs) made by solution-processes was investigated for enhancing stability of indium zinc oxide(IZO) TFT. A very viscous negative photoresist SU-8, which has high mechanical and chemical stability, was deposited by spin coating and patterned on top of TFT by photo lithography. To investigate the enhanced electrical performances by using SU-8 passivation layer, the TFT devices were analyzed by X-ray phtoelectron spectroscopy(XPS) and Fourier transform infrared spectroscopy(FTIR). The TFTs with SU-8 passivation layer show good electrical characterestics, such as ${\mu}_{FE}=6.43cm^2/V{\cdot}s$, $V_{th}=7.1V$, $I_{on/off}=10^6$, SS=0.88V/dec, and especially 3.6V of ${\Delta}V_{th}$ under positive bias stress (PBS) for 3600s. On the other hand, without SU-8 passivation, ${\Delta}V_{th}$ was 7.7V. XPS and FTIR analyses results showed that SU-8 passivation layer prevents the oxygen desorption/adsorption processes significantly, and this feature makes the effectiveness of SU-8 passivation layer for PBS.

• Journal of the Korean Magnetics Society
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• v.8 no.1
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• pp.13-20
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• 1998

The crystallographic and high frequency characteristics of $Fe_{73.9}Cu_{1.0}Nb_{3.5}Si_{14.0}B_{7.6}$ soft magnetic alloys were investigated under the magnetic field annealing. As-cast ribbon with which already imbedded nanocrystalline Fe-Si phase on the surface have a preferred orientation with (400) plane to surface and also with the [011] direction parallel to the ribbon length. The extra nanocrystalline Fe-Si phase appeared throughout at 45$0^{\circ}C$ in samples with or without the longitudinal magnetic field. However the formation of nanocrystalline phase does not appear on the suface layer until 50$0^{\circ}C$ annealing temperature under the transverse field. The cryststallization fraction of annealed samples with longitudinal magnetic field is higher than that of samples without magnetic field. When the transverse magnetic field is applied, the crystallization fraction does not increases but decreases until 50$0^{\circ}C$. However the crystallization of internal regions can be confirmed by X-ray diffraction measurement via tilting the sample. It was found that for all samples, the saturation induction were all same with 1.3 T. The coercive field of as-cast sample was 1.06 A/cm, but in annealed samples it decrease from 0.56 to 0.1 A/cm with increasing annealing temperature from 400 and 55$0^{\circ}C$, respectively. The squareness of annealed samples under transverse magnetic field has a small value than that of both without field and with longitudinal field annealing.

• Composites Research
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• v.29 no.4
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• pp.179-185
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• 2016

A self-charging supercapacitor is constructed through simple integration of the energy storage and photo exited materials at the photo electrode. The large band gap of $NiO/Fe_3O_4$ heterostructure generates photo electron at the photo electrode and store the charges through redox mechanism at the counter electrode. Sulfanilic acid azocromotrop/reduced graphene oxide layer at the photo electrode trapped the photo generated hole and store the charge by forming double layer. The solar supercapacitor device is charged within 400 s up to 0.5 V and exhibited a high specific capacitance of ~908 F/g against 1.5 A/g load. The solar illuminated supercapacitor shows a high energy and power density of 33.4 Wh/kg and 385 W/kg along with a very low relaxation time of ~15 ms ensuring the utility of the self charging device in the various field of energy storage and optoelectronic application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.594-599
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• 2007

[ $CulnS_2$ ] thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature $200^{\circ}C$. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the annealed $200^{\circ}C$ of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. The compositional deviations from the ideal chemical formula for $200^{\circ}C$ material can be conveniently described by non-molecularity$({\Delta}x=[Cu/In]-1)$ and non-stoichiometry $({\Delta}y=[{2S/(Cu+3In)}-1])$. The variation of ${\Delta}x$ would lead to the formation of equal number of donor and accepters and the films would behave like a compensated material. The ${\Delta}y$ parameter is related to the electronic defects and would determine the type of the majority charge carriers. Films with ${\Delta}y>0$ would behave as p-type material while ${\Delta}y<0$ would show n-type conductivity. At the sane time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}cm^{-3},\;312.502cm^2/V{\cdot}s\;and\;2.36{\times}10^{-2}\;{\Omega}{\cdot}cm$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04c
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• pp.15-17
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• 2008

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502[$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.261-262
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, 312.502 [$cm^2/V{\cdot}s$] and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.68-70
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• 2006

$CuInS_2$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furance annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the heat treatment 200 [$^{\circ}C$] of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1:1:2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}[cm^{-3}]$, $312.502[cm^2/V{\cdot}s]$ and $2.36{\times}10^{-2}[{\Omega}{\cdot}cm]$, respectively.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.155-163
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• 2011

Carbon nanotubes (CNT) have been attracted much attention since they have been expected to be used in various areas by virtue of their outstanding physical, electrical, and chemical properties. In order to make full use of their prominent electric conductivity in some areas such as electron emission sources, device interconnects, and electrodes in energy storage devices, direct growth of CNT with vertical alignment is definitely beneficial issue because they can maintain mechanical stability and high conductivity at the interface between substrates. Here, we report direct growth of vertically aligned CNT (VCNT) on Cu foils using thermal chemical vapor deposition and characterize the field emission property of the VCNT. The VCNT's height was controlled by changing the growth temperature, growth time, and catalytic layer thickness. Optimum growth condition was found to be $800^{\circ}C$ for 20 min with acetylene and hydrogen mixtures on Fe catalytic layer of 1 nm thick. The diameter of VCNT grown was smaller than that of usual multi walled CNT. Based on the result of field emission characterization, we concluded that the VCNT on Cu foils can be useful in various potential applications where high conductivity through the interface between CNT and substrate is required.

• International Journal of Highway Engineering
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• v.16 no.2
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• pp.61-71
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• 2014

PURPOSES : The first generation of wide base tires introduced in the early 1980s was found to cause a significant increase in pavement damage compared to dual-tire assemblies. However, wide base tires have evolved considerably, and a new generation of wide base tire is thought to be comparable to conventional dual tires for pavement damage. A challenge associated with using wide base tires is the accurate quantification of pavement damage induced by these tires. The objective of this study was to investigate the responses of flexible pavement to continuously moving vehicular loading under various tire configurations. METHODS : The comparison of the strain/stress responses of full-depth pavement caused by conventional dual tire assembly and new generation of wide-base tires was performed. The FE model incorporates linear viscoelasticity of asphalt material and continuous moving load using implicit dynamic analysis. RESULTS AND CONCLUSIONS : The result demonstrates that the new wide-base tires caused slightly more fatigue damage and less primary rutting damage in HMA layer than a dual-tire assembly, but caused more secondary rutting damage in subgrade than a dual tire assembly.