• Title/Summary/Keyword: FeS layer

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Design of Advanced Weathering Steel with High Corrosion Resistance for Structural Applications

  • Choi, B.K.;Jung, H.G.;Yoo, J.Y.;Kim, K.Y.
    • Corrosion Science and Technology
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    • v.4 no.4
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    • pp.121-129
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    • 2005
  • Basic design concept of the future steel structure requires environmental compatibility and maintenance free capability to minimize economic burdens. Recent trends in alloy design for advanced weathering steel include addition of various alloying elements which can enhance formation of stable and protective rust layer even in polluted urban and/or high $Cl^{-}$ environment. The effects of Ca, Ni, W, and Mo addition on the corrosion property of Ca-modified weathering steel were evaluated through a series of electrochemical tests (pH measurement and electrochemical impedance spectroscopy: EIS) and structural analysis on rust layer formed on the steel surface. Ca-containing inclusions of Ca-Al-Mn-O-S compound are formed if the amount of Ca addition is over 25 ppm. Steels with higher Ca content results in higher pH value for condensed water film formed on the steel surface, however, addition of Ni, W, and Mo does not affect pH value of the thin water film. The steels containing a high amount of Ca, Ni, W and Mo showed a dense and compact rust layer with enhanced amount of ${\alpha}-FeOOH$. Addition of Ni, W and Mo in Ca-modified weathering steel shows anion-selectivity and contributes to lower the permeability of $Cl^{-}$ ions. Effect of each alloying element on the formation of protective rust layer will be discussed in detail with respect to corrosion resistance.

Characteristics of a Titanium-oxide Layer Prepared by Plasma Electrolytic Oxidation for Hydrogen-ion Sensing

  • Lee, Do Kyung;Hwang, Deok Rok;Sohn, Young-Soo
    • Journal of Sensor Science and Technology
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    • v.28 no.2
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    • pp.76-80
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    • 2019
  • The characteristics of a titanium oxide layer prepared using a plasma electrolytic oxidation (PEO) process were investigated, using an extended gate ion sensitive field effect transistor (EG-ISFET) to confirm the layer's capability to react with hydrogen ions. The surface morphology and element distribution of the PEO-processed titanium oxide were observed and analyzed using field-emission scanning-electron microscopy (FE-SEM) and energy-distribution spectroscopy (EDS). The titanium oxide prepared by the PEO process was utilized as a hydrogen-ion sensing membrane and an extended gate insulator. A commercially available n-channel enhancement MOS-FET (metal-oxide-semiconductor FET) played a role as a transducer. The responses of the PEO-processed titanium oxide to different pH solutions were analyzed. The output drain current was linearly related to the pH solutions in the range of pH 4 to pH 12. It was confirmed that the titanium-oxide layer prepared by the PEO process could feasibly be used as a hydrogen-ion-sensing membrane for EGFET measurements.

Synthesis and Characterization of Magnetic Core-shell ZnFe2O4@ZnO@SiO2 Nanoparticles (Magnetic Core-shell ZnFe2O4@ZnO@SiO2 Nanoparticle의 합성과 성질에 관한 연구)

  • Yoo, Jeong-Yeol;Lee, Young-Ki;Kim, Jong-Gyu
    • Journal of the Korean Chemical Society
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    • v.59 no.5
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    • pp.397-406
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    • 2015
  • ZnO, II-VI group inorganic compound semi-conductor, has been receiving much attention due to its wide applications in various fields. Since the ZnO has 3.37 eV of a wide band gap and 60 meV of big excitation binding energy, it is well-known material for various uses such the optical property, a semi-conductor, magnetism, antibiosis, photocatalyst, etc. When applied in the field of photocatalyst, many research studies have been actively conducted regarding magnetic materials and the core-shell structure to take on the need of recycling used materials. In this paper, magnetic core-shell ZnFe2O4@SiO2 nanoparticles (NPs) have been successfully synthesized through three steps. In order to analyze the structural characteristics of the synthesized substances, X-ray diffraction (XRD), scanning electron microscopy (SEM), and Fourier transform infrared spectroscopy (FT-IR) were used. The spinel structure of ZnFe2O4 and the wurtzite structure of ZnO were confirmed by XRD, and ZnO production rate was confirmed through the analysis of different concentrations of the precursors. The surface change of the synthesized materials was confirmed by SEM. The formation of SiO2 layer and the synthesis of ZnFe2O4@ZnO@SiO2 NPs were finally verified through the bond of Fe-O, Zn-O and Si-O-Si by FT-IR. The magnetic property of the synthesized materials was analyzed through the vibrating sample magnetometer (VSM). The increase and decrease in the magnetism were respectively confirmed by the results of the formed ZnO and SiO2 layer. The photocatalysis effect of the synthesized ZnFe2O4 @ZnO@SiO2 NPs was experimented in a black box (dark room) using methylene blue (MB) under UV irradiation.

Effect of Ultrathin Film HfO2 by Atomic Layer Deposition on the Propreties of ZnS:Cu,Cl Phosphors (ZnS:Cu,Cl 형광체의 특성에 미치는 원자층 증착 초박막 HfO2의 영향)

  • Kim, Min-Wan;Han, Sand-Do;Kim, Hyung-Su;Kim, Hyug-Jong;Kim, Hyu-Suk;Kim, Suk-Whan;Lee, Sang-Woo;Choi, Byung-Ho
    • Korean Journal of Materials Research
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    • v.16 no.4
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    • pp.248-252
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    • 2006
  • An investigation is reported on the coating of ZnS:Cu,Cl phosphors by $HfO_2$ using atomic layer deposition method. Hafnium oxide films were prepared at the chamber temperature of $280^{\circ}C$ using $Hf[N(CH_3)_2]_4\;and\;O_2$ as precursors and reactant gas, respectively. XPS and ICP-MS analysis showed the surface composition of coated phosphor powder was hafnium oxide. In FE-SEM analysis, the surface morphology of uncoated phosphors became smoother and clearer as the number of ALD cycle increased from 900 to 1800. The photoluminescence intensity for coated phosphors showed $7.3{\sim}13.4%$ higher than that of uncoated. The effect means that the reactive surface is uniformly coated with stable hafnium oxide to reduce the dead surface layer without change of bulk properties and also its absorptance is almost negligible due to ultrathin(nano-scaled) films. The growth rate is about $1.1{\AA}/cycle$.

3-D Structured Cu2ZnSn (SxSe1-x)4 (CZTSSe) Thin Film Solar Cells by Mo Pattern using Photolithography (Mo 패턴을 이용한 3-D 구조의 Cu2ZnSn (SxSe1-x)4 (CZTSSe) 박막형 태양전지 제작)

  • Jo, Eunjin;Gang, Myeng Gil;Shin, hyeong ho;Yun, Jae Ho;Moon, Jong-ha;Kim, Jin Hyeok
    • Current Photovoltaic Research
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    • v.5 no.1
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    • pp.20-24
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    • 2017
  • Recently, three-dimensional (3D) light harvesting structures are highly attracted because of their high light harvesting capacity and charge collection efficiencies. In this study, we have fabricated $Cu_2ZnSn(S_xSe_{1-x})_4$ based 3D thin film solar cells on PR patterned Molybdenum (Mo) substrates using photolithography technique. Specifically, Mo patterns were deposited on PR patterned Mo substrates by sputtering and the thin Cu-Zn-Sn stacked layer was deposited over this Mo patterns by sputtering technique. The stacked Zn-Sn-Cu precursor thin films were sulfo-selenized to form CZTSSe pattern. Finally, CZTSSe absorbers were coated with thin CdS layer using chemical bath deposition and ZnO window layer was deposited over CZTSSe/CdS using DC sputtering technique. Fabricated 3-D solar cells were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF) analysis, Field-emission scanning electron microscopy (FE-SEM) to study their structural, compositional and morphological properties, respectively. The 3% efficiency is achieved for this kind of solar cell. Further efforts will be carried out to improve the performance of solar cell through various optimizations.

Etching of MTJ (Magnetic Tunnel Junction) in an ICP Etching System for STT-MRAM applications

  • Park, Jong-Yun;Gang, Se-Gu;Jeon, Min-Hwan;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.169-169
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    • 2011
  • STT-MRAM (수직자화 자기메모리)는 자화반전 현상을 원리로 구동하는 비휘발성 메모리로 기존의 메모리 장치에 비해 빠른 접근 속도와 높은 저장 밀도를 가지며 영구적인 기록이 가능하다. 이러한 장점들에 더해 적은 소모 전력을 지니므로 기존의 SRAM등의 한계를 극복할 대안으로 각광받고 있으며 차세대 메모리 군의 선두주자로 가장 적합한 후보중 하나이다. STT-MRAM의 건식 식각 방식에 있어 가장 큰 이슈는 소자 구동에 핵심적인 역할을 하는 MTJ(Magnetic Tunnel Junction)의 식각이다. MTJ는 free layer, tunnel barrier, pinned layer 3개의 층으로 구성되어 있으며 양 끝 layer에는 강자성체인 CoFeB가 사용되고 tunnel barrier에는 절연층인 MgO가 사용되고 있다. 이러한 물질들은 기존의 반도체 소자에서는 사용되지 않았던 물질들로 기존 공정에서 사용되던 Cl2 based plasma etching에서는 측벽에 비화발성 반응물과 잔류 Cl2에 의해 부식이 발생하는 문제점이 드러나고 있다. 이러한 문제점을 해결하기 위한 새로운 대안으로 CO/NH3/Ar나 CH4/Ar 같은 새로운 가스 조합을 사용하는 연구가 진행되고 있다. 이러한 연구에 의해 기존의 Cl2 plasma를 이용한 식각에서 나타나는 문제점은 해결이 되었으나 또 다른 문제점들이 보고되고 있다. 본 연구에서는 stack MRAM sample을 사용하여 기존의 사용되는 Cl2/Ar plasma와 대안 gas인 CO/NH3, CH4/Ar plasma에서의 식각을 진행하였으며 실험 조건(gas 비율 변화, Bias power 변화, 식각 시간)에 따른 식각 속도의 변화나 식각 후의 profile에 대하여 관찰하였다. 이에 따라 식각후에 어떠한 차이점이 있는 지를 알아보았으며 CO/NH3나 CH4/Ar plasma에서 식각시 나타나는 문제점에 대하여도 조명해 보았다.

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