• Nuclear Engineering and Technology
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• v.56 no.7
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• pp.2740-2747
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• 2024

The sintering process acquired ferromagnetic copper ferrite ceramic material with a small concentration of Ni ion at 1100 ℃ for 1 h. Previously, copper ferrite with Ni proportions powder was acquired by the wet chemical process according to the relation CuFe_2-xNi_xO₄ where x takes values 0.0, 0.015, 0.03, 0.04, and 0.05. The role of Ni ion in the copper ferrite structure was investigated by X-ray analysis, Scanning electron microscope, EDX analysis, and density measurements. The gamma-ray shielding properties for the fabricated CuFeNiO ceramics samples were evaluated using the Monte Carlo simulation method. The obtained results show an enhancement in the linear attenuation coefficient for the fabricated ceramics with increasing the insertions of Ni ions within the fabricated samples, where increasing the Ni ions concentration between 0 and 1.19 wt% increases the linear attenuation by between 1.581 and 1.771 cm^-1 (at 0.103 MeV), 0.304-0.338 cm^-1 (at 0.662 MeV), and 0.160-0.178 cm^-1 (at 2.506 MeV), respectively. Simultaneously, the radiation protection efficiency for a 1 cm thickness of the fabricated samples increased between 14.8 and 16.3% with increasing the Ni ions between 0 and 1.19 wt%. Although the Ni doping concentration does not exceed 1.5 wt% of the total composition of the fabricated ceramics, the shielding capacity of the fabricated ceramics was enhanced by more than 11%, along the studied energy interval. Therefore, the fabricated samples can be used in gamma-ray shielding applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.402-402
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• 2012

Bundles of single-walled carbon nanotube (SWCNTs) were grown using catalytic layer supported by self-assembled monolayers (SAMs). Amine-SAMs were introduced on SiO2/Si substrate (SAMs/Si) there then iron nanoclusters solution was dropped on it through spin-coating (Fe/SAMs/Si). This catalytic template was used to grow CNTs and the synthesized carbon material was confirmed the bundles of dense SWCNTs with incorporation of ca.1% nitrogen. The SAMs has played an active role to support catalytic layer and also acted as a source of N-dope onto SWCNTs in CVD.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.295-295
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• 2012

The $TiO_2$ films were prepared in the $H_2SO_4$ solution containing $NH_4F$ at different anodic voltages, to compare the photocatalytic performances of titania for purification of waste water. The microstructure was characterized by a Field-emission scanning electron microscopy (FE-SEM) and X-ray diffractometry (XRD). Chemical bonding states and co-doped elements of F and N were analyzed using surface X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of the co-doped $TiO_2$ films was analyzed by the degradation of aniline blue solution. From the result of diffuse reflectance absorption spectroscopy(DRS), it is indicated that the absorption edge of the F-N-codoped $TiO_2$ films shifted toward visible light area, and the photocatalytic reaction of $TiO_2$ was improved by doping an appropriate contents of F and N.

• Journal of the Korean Magnetics Society
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• v.13 no.6
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• pp.237-242
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• 2003

$Ti_{1-x}$$^{57}$ F $e_{x}$ $O_2$(0.0$\leq$x$\leq$0.07) compounds were fabricated using the sol-gel method, and the crystal structure and magnetic properties were investigated as a function of doped $^{57}$ Fe concentration. X-ray diffraction patterns showed a pure anatase single phase, without any segregation of Fe into particulate. With varying $^{57}$ Fe concentration, we could observe unusual magnetic phenomena in these materials. Doping $^{57}$ Fe into the Ti $O_2$ nonmagnetic semiconductor formed magnetic properties, but the gradual increase of $^{57}$ Fe concentration decreased rapidly the ferromagnetic properties rather than enhanced the ferromagnetic properties. Obvious ferromagnetic behavior was shown for the samples with x$\leq$0.01, while paramagnetic behavior was shown for the sample with x$\geq$0.03. These phenomena could be verified using Mossbauer measurement. Separation of the ferromagnetic phase (sextet) and the paramagnetic phase (doublet) of the samples with different $^{57}$ Fe concentration was characterized. Samples with x$\leq$0.01 have sextet and doublet simultaneously, but samples with x$\geq$0.03 have only doublet at room temperature. This indicates that the sample x$\leq$0.01 have the ferromagnetic phase at room temperature. This result corresponded with the M-H loops referenced above and reveals an interesting feature that there is a critical limit of $^{57}$ Fe concentration (0.01$\leq$0.01 samples was fundamentally attributable to the paramagnetic phase as well as the ferromagnetic phase.e.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.347-352
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• 2016

ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, $As^+$ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of $1.263{\times}10^{18}cm^{-3}$ were obtained when the dose of $5{\times}10^{14}$ As $ions/cm^2$ was implanted and the RTA was conducted at $850^{\circ}C$ for 1 min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.207-210
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• 2005

In order to investigate the influence of the homo buffer layer on the microstructure of the ZnO thin film, undoped ZnO buffer layer were deposited on sapphire (0001) substrates by ultra high vaccum pulsed laser deposition (UHV-PLD) and molecular beam eiptaxy (MBE). After high temperature annealing at $600^{\circ}C$ for 30min, undoped ZnO buffer layer was deposited with various oxygen pressure (35~350mtorr). On the grown layer of undoped ZnO, Arsenic-doped(l, 3wt%) ZnO layers were deposited by UHV-PLD. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement. From $\Theta-2\Theta$ XRD analysis, all the films showed strong (0002) diffraction peak, and this indicates that the grains grew uniformly with the c-axis perpendicular to the substrate surface. Field emission scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO were varied with oxygen pressure, arsenic doping level, and the deposition method of undoped ZnO buffer layers. The films became denser and smoother in the cases of introducing MBE-buffer layer and lower oxygen pressure during As-doped ZnO deposition. Higher As-doping concentration enhanced the columnar-character of the films.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.180-180
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• 2000

Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

• Fashion & Textile Research Journal
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• v.21 no.3
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• pp.363-369
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• 2019

This study developed electroconductive textiles by coating polypyrrole to PET nonwoven-based Polyvinyl Alcohol (PVA) nanoweb made by electrospinning and applying the developed electrotextiles as ECG Electrodes. To find the optimum coating conditions for high electrical conductivity, the ratios of 2.6-Naphthalenedisulfonic acid with Disodium Salt (NDS) vs Ammonium Persulfate (APS) as an oxidant and a doping agent in the solution were changed from 3:7 to 7:3; the immersion time of the specimen in the solution was 1 hour. PVA nanowebs coated with polypyrrole under various conditions were filmed with FE-SEM. FT-IR analysis was also performed to examine the presence of polypyrrole nanoparticles in the PVA nanoweb. The electrical resistance of the treated specimens were measured with a Multimeter. Consequently, the PVA Nano Web was undamaged even after heat treatment that allowed for coating. Uniform polypyrrole nanoparticles then formed on the surface of the PVA nanoweb after coating. The measured electrical resistance was shown to be at least $12K{\Omega}/{\Box }$ from a maximum of $3,456K{\Omega}/{\Box }$. The proper amount of NDS content had a positive effect on the conductivity improvement of electroconductive textiles; in addition, the highest electrical conductivity was achieved with a ratio of 3:7 between NDS and APS.

• Journal of Powder Materials
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• v.30 no.6
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• pp.516-520
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• 2023

Highly safe lithium-ion batteries (LIBs) are required for large-scale applications such as electrical vehicles and energy storage systems. A highly stable cathode is essential for the development of safe LIBs. LiFePO₄ is one of the most stable cathodes because of its stable structure and strong bonding between P and O. However, it has a lower energy density than lithium transition metal oxides. To investigate the high energy density of phosphate materials, vanadium phosphates were investigated. Vanadium enables multiple redox reactions as well as high redox potentials. LiVPO₄O has two redox reactions (V⁵⁺/V⁴⁺/V³⁺) but low electrochemical activity. In this study, LiVPO₄O is doped with fluorine to improve its electrochemical activity and increase its operational redox potential. With increasing fluorine content in LiVPO₄O_1-xF_x, the local vanadium structure changed as the vanadium oxidation state changed. In addition, the operating potential increased with increasing fluorine content. Thus, it was confirmed that fluorine doping leads to a strong inductive effect and high operating voltage, which helps improve the energy density of the cathode materials.

• Journal of the Korean Electrochemical Society
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• v.1 no.1
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• pp.1-7
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• 1998

For the purpose of finding new cathode materials for medium-temperature $(700\~800^{\circ}C)$ solid oxide fuel cells, $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3,\;(x=0.0\~0.5)$ are prepared, and their thermal stability and conductivity characteristics are investigated. Also, the cathodic activities are measured after the cathode layer being attached on CGO (cerium-gadolinium oxide) electrolyte disk. The X-ray analyses indicate that the materials prepared by calcining the citrate-gels at $800^{\circ}C$ have the orthorhombic perovskite structure without discernible impurities. The thermal stability of the undoped Co perovskite is so poor that it is decomposed to the individual binary oxide even at $1300^{\circ}C$. But the partially Fe-doped cobaltates exhibit a better thermal stability to retain their structural integrity up to $1400^{\circ}C$. The observation whereby both the undoped and Fe-doped cobaltates melt at ca. $1300^{\circ}C$ leads us to perform the electrode adhesion at <$1300^{\circ}C$. The cathodic activity of $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3,\;(x=0.0\~0.5)$, electrodes is superior to $La_{0.9}Sr_{0.1}MnO_3$, among the samples of $x=0.0\~0.5$, the x=0.2 cathode shows the best activity for the oxygen reduction reaction. It is likely that the Fe-doping provides a better thermal stability to the materials but in turn imparts an inferior cathodic activity, such that the optimum trade-off is made at x=0.2 between the two factors. The total electrical conductivity and ion conductivity of $Gd_{0.8}Ca_{0.2}Co_{1-x}Fe_xO_3$, are measured to be 51 S/cm and $6.0\times10^{-4}S/cm\;at\;800^{\circ}C$, respectively. The conductivity values illustrate that the materials are a mixed conductor and the reaction sites can be expanded to the overall electrode surface, thereby providing a better cathodic activity than $La_{0.9}Sr_{0.1}MnO_3$.