• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1060-1065
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• 1996

We have studied the magnetoresistance phenomena on spin valve thin films of antiferromagnetic NiO/CoO. Interlayer coupling oscillates between the antiferrocoupling and ferrocoupling with the variation of Cu thickness. The exchange coupling strength between NiO (antiferromagnetic) and NiFe(ferromagnetic) as a function of NiO texture and interface roughness is investigated by CoO insertion. CoO has significantly higher anisotropy in the (111) plane and interface roughness. It seems that the MR-ratio is increased by CoO inserted films. From the AFM and XRD data, the increase of MR-ratio and exchange field is influenced by the roughness of CoO.

• Journal of the Korean Magnetics Society
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• v.17 no.3
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• pp.120-123
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• 2007

The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe7/$AlO_x$/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an $Ni_{16}Fe_{62}Si_8B_{14}$ 7 nm, $Co_{90}Fe_{10}$ (fcc) 7 nm, or CoFe $t_1$/NiFeSiB $t_2$/CoFe $t_1$ layer in which the thicknesses $t_1$ and $t_2$ are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of $86\;k{\Omega}{\mu}m^2$, a coercivity ($H_c$) of 11 Oe, and an interlayer coupling field ($H_i$) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of $68\;k{\Omega}{\mu}m^2$, and a of 11 Oe, but an increased of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and became large because of the magnetostatic $N{\acute{e}}el$ coupling.

• Journal of the Korean Magnetics Society
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• v.14 no.1
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• pp.25-28
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• 2004

The dependence of sensitivity, MR ratio, coercivity (Hc) and switching fields as a function of thickness of each magnetic layers(Co, NiFe and Cu) were investigated in pseudo spin valves with a structure of Ta/NiFe/Cu/Co. As measured results dependence of the thickness of each magnetic layer, we obtained MR ratio of 7.26% for Ta(4 nm)/NiFe(7.5 nm)/Cu(3 nm)/Co(5 nm) pseudo spin valves. Also, we could control properties of magnetoresistance for independent magnetization courses of each magnetic layer. Especially, we found that we could control coercivity as constant MR ratio dependence of Co thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.304-304
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• 2011

We investigated the effect of different spin direction of anti-ferromagnetic layer on the magnetic properties of ferromagnetic layer in Fe-NiO and Fe-CoO bi-layer systems. For Fe-NiO system, we prepared the clean MgO(001) surface half-covered with 20 nm Ag films as a substrate for magnetic layers. Then we grew NiO wedge layers on the substrate, and added 8 monolayer(ML) Fe layers on the wedge layer. We examined magnetic properties of the bi-layer system using the surface magnetic optical Kerr effect(SMOKE) and X-ray magnetic linear dichroism(XMLD). From SMOKE measurement we observed the coercivity enhancement due to the set-up of anti-ferromagnetic order of NiO films in both of the Fe/NiO/MgO(001) and Fe/NiO/Ag/MgO(001) system. The most remarkable results in our observation is that the coercivity enhancement of Fe/NiO/Ag/MgO(001) is much larger than that of Fe/NiO/MgO(001). XMLD experiments confirmed the out-of-plane spin direction of NiO layers in Fe/NiO/MgO(001) and in-plane spin-direction of NiO layers in Fe/NiO/Ag/MgO(001), and we concluded that the origin of large enhancement of coercivity is due to the strong parallel coupling between Fe layers and NiO layers. We also confirmed that this strong parallel coupling maintained across the thin Ag layer inserted between Fe and NiO layers. For Fe-CoO system, we prepared Fe/CoO/Ag(001) and Fe/CoO/MnO(001) systems and observed much larger coercivity enhancement in Fe/CoO/Ag(001).

• Journal of the Korean Electrochemical Society
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• v.5 no.1
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• pp.17-20
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• 2002

Various compositions of CoFeNi alloys have been electrodeposited in chloride bath and in sulfate bath, and evaluated for electrodeposition characteristics and magnetic properties. For electrodeposited CoFeNi thin film alloys, the increase of Fe content in the deposits from sulfate bath was considerably faster than those from chloride bath. The current efficiencies in sulfate bath showed observable decrease from $75\%\;to\;50\%$ while those in chloride bath showed no significant decrease. From the low coercivity of 3 Oe in the minimum and the higher squarenesses of the alloys from sulfate bath than those from chloride bath, the alloy at Co, Fe, and Ni contents of $80wt.\%,\;10wt.\%,\;and\;10wt.\%$ can be considered to be the best CoFeNi alloy in this research for the soft magnetic material.

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.98-103
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• 1999

We have studied changes of coercivity $(H_c)$, exchange anisotropy field $(H_{ex})$ and MR ration in glass/Ta/NiFeI/CoI(t)/Cu/CoII(3/4 t)/NiFeII/FeMn spin valve structures by changing Ar pressure and thicknesses of Co layers using DC, RF sputtering methods. We obtained minimum coercivity of 2.8 Oe at 4 mTorr of Ar pressure, exchange anisotropy field of 50.0 Oe at 6 mTorr and 5.3 % of MR ratio at 10 mTorr. Also, we obtained 3.0 Oe of coercivity at 40 $\AA$ of CoI layer, 65.9 Oe at 13 $\AA$ and 4.7 % of MR ratio at 27 $\AA$ and 34 $\AA$ by changing the thicknesses of Co layers.

• Proceedings of the Korean Magnestics Society Conference
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• 2001.04a
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• pp.58-59
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• 2001

• Analytical Science and Technology
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• v.8 no.4
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• pp.869-876
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• 1995

The active sites of the nickel and iron-containing enzyme, carbon monoxide dehydrogenase (CODH) from clostridium thermoaceticum were investigated using Electron Paramagnetic Resonance (EPR) technique. CODH exhibits several spectral features called NiFeC, $g_{ave}=1.82$, $g_{ave}=1.86$. FCII signals which are originated from different clusters in this enzyme. CODH is know to catalyze two different kinds of reactions - acetyl-CoA synthesis and CO oxidation. The acetyl-CoA synthesis activity can be followed by monitoring CO/acetyl-CoA exchange. The addition of 1,10-phenanthroline (phen) to CODH selectively destroyed the CO/acetyl-CoA exchange activity and eliminated the NiFeC signal completely. CO oxidation activity and other EPR signals were unaffected. Such behavior demonstrates that CODH has two distinct active sites and that the NiFe complex is only responsible for the CO/acctyl-CoA exchange activity. Phen caused the removal of only 30% of Ni in the NiFe complex ($0.3Ni/{\alpha}{\beta}$) as shown by the quantitative metal analysis. The phen-treated CODH could be reactivated fully by incubation In $Ni^{2+}$ solution. Radioactive $^{63}Ni^{2+}$ was used to quantitate the amount of the $Ni^{2+}$ incorporated into phen-treated enzyme and showed that the amount was the same as the removed by the phen treatment. i.e. $0.3Ni/{\alpha}{\beta}$. This indicates that only 30% of NiFe complexes are labile and responsible for the CO/acctyl-CoA exchange activity, the other 70% are non-labile and have no exchange activity. This is the first clear evidence that the NiFe complex is heterogencous and labile and non-labile Ni sites arc interacting differently with substrates and chelating agents like phen.

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.239-243
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• 1994

$NiFe/TbCo/Si_3N_4$ thin films were fabricated, which can be employed as dualOongitudinal and transverse) biased magnetoresistive elements utilizing surface magnetic exchange at the interface of NiFe/TbCo films. When Tb area percent was 36 % and substrate bias was not applied, magnetic exchange fields of 100~180 Oe were obtained. The thicknesses of NiFe, TbCo and $Si_3N_4$(Protective layer) were $470\;{\AA},\;2400\;{\AA}\;and\;600\;{\AA}$, respectively. Magnetoresistance ratio of 1.45 % was obtained using NiFe films fabricated with 1000 W power and 2.5 mTorr of Ar pressure. The MR ratio of microstructured elements was reduced to 1.31 % and the MR response curves were shown not to saturate due to demagnetizing fields of the elements. When elements were fabricated with $36^{\circ}$ of misalignment with respect to the exchange field direction using films having 150 Oe exchange field, MR response curve was shifted by 85 Oe, and the operating point of the device shifted to the linear region of the response. Also, the Barkhausen noise was eiminated due to longitudinal bias field originating from the exchange field.

• Proceedings of the Korean Magnestics Society Conference
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• 1996.10a
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• pp.26-27
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• 1996