• Journal of Powder Materials
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• v.29 no.3
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• pp.240-246
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• 2022

Novel Ni- and Fe-based alloys are developed to impart improved mechanical properties and corrosion resistance. The designed alloys are manufactured as a powder and deposited on a steel substrate using a high-velocity oxygen-fuel process. The coating layer demonstrates good corrosion resistance, and the thus-formed passive film is beneficial because of the Cr contained in the alloy system. Furthermore, during low-temperature heat treatment, factors that deteriorate the properties and which may arise during high-temperature heat treatment, are avoided. For the heattreated coating layers, the hardness increases by up to 32% and the corrosion resistance improves. The influence of the heat treatment is investigated through various methods and is considered to enhance the mechanical properties and corrosion resistance of the coating layer.

• Ocean and Polar Research
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• v.26 no.2
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• pp.231-243
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• 2004

Sequential extraction was carried out on twenty two subsamples of three ferromanganese crusts from three seamounts (Lemkein, Lomilik, and Litakpooki) near the Marshall Islands in the western Pacific. The extraction was designed to fractionate Fe-Mn crust forming elements into low defined groups: (1) exchangeable and carbornate, (2) Mn-oxide, (3) Fe-oxyhyd.oxide, and (4) residual fraction. X-ray diffraction result shows that target material were well removed by each extraction step except for CFA in phosphatized crusts generation. According to chemical analysis of each leachate, most of elements in the Fe-Mn crusts are bound with two major phases. Mn, Ba, Co, Ni, Zn, (Fe, Sr, Cu, and V) are strongly bounded with Mn-oxide $({\delta}-MnO_2)$ phase, whereas Fe, Ti, Zr, Mo, Pb, Al, Cu,(V, P, and Zn) show chemical affinity with Fe-oxyhydroxide phase. This result indicates that significant amount of Al, Ti, and Zr can not be explained by detrital origin. Ca, Mg, K, and Sr mainly occur as exchangeable elements and/or carbonate phase. Outermost layer 1 and inner layer 2 which are both young crusts generations are similar in chemical speciations of elements. However, some of Fe-oxyhydroxide bounded elements (Pb, Y, Mo, Ba, Al, and V) in phosphatized innermost layer 3 are released during phosphatization and incorporated into phosphate (Pb, Y, Mo, and Ba) or Mn-oxide phase (Al and V). Our sequential extraction results reveal that chemical speciations of elements in the hydrogenetic crusts are more or less different from interelemental relationship calculated by statistical method based on bulk chemistry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.5
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• pp.500-506
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• 2024

The transparent electrode characteristics of the SnO₂/AgNi/SnO₂ (OMO) multilayer structures prepared by sputtering were investigated according to the annealing temperature. Ni-doped Ag of various compositions was selected as the metal layer and heat treatment was performed at 100~300℃ to evaluate the thermal stability of the metals. The manufactured OMO multilayer structures were heat treated for 6 hours at 400~600℃ in an N₂ atmosphere. The structural, electrical, and optical properties of the OMO structures before and after annealing were evaluated and analyzed using a UV-VIS spectrophotometer, 4-point probe, XPS, FE-SEM, etc. OMO with Ni-doped Ag shows improved performance due to the reduction of structural defects of Ag during annealing, but OMO structure with pure Ag shows degradation characteristics due to Ag diffusion into the oxide layer during high-temperature annealing. The figure of merit (FOM) of SnO₂/Ag/SnO₂ was highest at room temperature and gradually decreased as the heat treatment temperature increased. On the other hand, the FOM value of SnO₂/AgNi/SnO₂ mostly showed its maximum value at high temperature(~550℃). In particular, the FOM value of SnO₂/Ag-Ni (3.2 at%)/SnO₂ was estimated to be approximately 2.38×10^-2 Ω^-1. Compared to transparent electrodes made of other similar materials, the FOM value of the SnO₂/Ag-Ni (3.2 at%)/SnO₂ multilayer structure is competitive and is expected to be used as an alternative transparent conductive electrode in various devices.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.94-100
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• 2004

We have investigated the magnetic domain structure and the thermal stability of magnetotransport properties of IrMn biased spin-valves containing Co, CoFe and NiFe. The magnetic domain structures were imaged using a magneto-optical indicator film(MOIF) technique. To investigate the thermal stability, magnetoresistance(MR) was measured at annealing temperature(TANN) and room temperature($T_{RT}$) followed by the annealing. Domain imaging reveal that the increase of annealing temperature led to changes in the exchange coupling between the two ferromagnet(FM) layers through nonmagnetic layer rather than between FM and antiferromagnet. unlike the NiFe biased IrMn spin valve with large domains, MOIF pictures of Co and CoFe biased IrMn spin valve structures show the formation of many small microdomains. The magnetic structure, as revealed by the domain images, appeared unchanged while the MR dropped dramatically. From the combined giant magnetoresistance(GMR) and MOIF results, it was apparent that the decrease of MR ratio was not related to the spin valve magnetic structure up to about $350^{\circ}C$($T_{RT}$ ).

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.203-209
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• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P 1)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with natural oxide were prepared by dc magnetron sputtering system. We have changed only the thickness in free layers and the thickness difference (Pl-P2) in two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on interlayer coupling field in spin valve with synthetic antiferromagnet. According to the decrease of free layer thickness, interlayer coupling field was increased due to the magnetostatic coupling(orange peel coupling). In case of t$\_$P1/>t$\^$P2/, interlayer coupling field agreed well with the modified Neel model suggested in conventional spin valve structures by Kools et al. However, in case of t$\_$P1/>t$\^$P2/, it was found that the interlayer coupling field was not explained by the Modified Neel Model and was confirmed the necessity of further remodeling. The dependence of Cu thickness on the interlayer coupling field was investigated and 10 Oe of interlayer coupling field was obtained when the Cu thickness is 32 $\AA$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.129-129
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• 2016

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which needs transfer to desired substrates for various applications. However, the transfer steps are not only complicated but also inevitably induce defects, impurities, wrinkles, and cracks of graphene. Furthermore, the direct synthesis of graphene on dielectric surfaces has still been a premature field for practical applications. Therefore, cost effective and concise methods for transfer-free graphene are essentially required for commercialization. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer. In order to fabricate 100 nm thick NiC layer on the top of $SiO_2/Si$ substrates, DC reactive magnetron sputtering was performed at a gas pressure of 2 mTorr with various Ar : $CH_4$ gas flow ratio and the 200 W DC input power was applied to a Ni target at room temperature. Then, the sample was annealed under 200 sccm Ar flow and pressure of 1 Torr at $1000^{\circ}C$ for 4 min employing a rapid thermal annealing (RTA) equipment. During the RTA process, the carbon atoms diffused through the NiC layer and deposited on both sides of the NiC layer to form graphene upon cooling. The remained NiC layer was removed by using a 0.5 M $FeCl_3$ aqueous solution, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. In order to confirm the quality of resulted graphene layer, Raman spectroscopy was implemented. Raman mapping revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Additionally, sheet resistance and transmittance of the produced graphene were analyzed by a four-point probe method and UV-vis spectroscopy, respectively. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• Journal of Welding and Joining
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• v.11 no.1
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• pp.62-72
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• 1993

Recently there is an increased interest in joining of ceramics to metals and brazing now an accepted method of joining for a wide variety of ceramic to metal combination. The present research work is aimed at establishing the basis of the metal-ceramic joining of $Al_{2}$O$_{3}$ to STS 304 with using Cu-7.5wt% Zr insert metals. Also the microstructures of the brazed joints were observed by using optical microscope and SEM and the reaction products were analyzed by using EDX, WDX and XRD. As a result, the following findings were obtained. The reaction layers of the brazed joints of $Al_{2}$O$_{3}$ to STS 304 are composed of four layers at the bonded interlayer. Double reaction layers are formed at the interface of $Al_{2}$O$_{3}$ insert metal. Layer I was composed of ZrO$_{2}$ particles, Fe-Cr-Ni compounds in Cu matrix, while layer II ZrO$_{2}$ band phase containing Fe-Cr-Ni compounds.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.7
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• pp.681-686
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• 2009

Direct laser metal forming technology was applied to restore the damaged mold surface. In order to estimate melting characteristics of the $20{\mu}m$ Fe-Cr-Ni powder, single layer experiments were performed at various levels of heat input. The process window of the $20{\mu}m$ Fe-Cr-Ni powder provided feasible process parameters for the smooth regular surface. The cross hatching scanning strategy on the multiple layer experiment was performed to reduce the thickness non-uniformity of edge portions compared with the one direction scanning. To estimate the coherence between the melted powder and the basematal, the tendency of hardness distribution has been observed. The hardness of the melted and the remelted zone was distributed from 400HV to 600HV. It is over 2 times compared of the hardness of the basemetal. Experimental results show that the mold restoring process using direct laser metal forming can be successfully applied in the mold repair industry.

• Journal of Welding and Joining
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• v.34 no.5
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• pp.77-82
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• 2016

In this study, Microstructure and hardness of 1st layer with crystallographic orientation were investigated about solidification structure in multipass weld using high Mn-Ni flux cored wire. Microstructure of solidification consisted of austenite matrix and a little ${\varepsilon}-phase$ in grain boundaries. Orientation of grains was usually (001), (101), (111). According to crystallographic orientation, morphology of primary dendrite was different. The depletion of Fe and the segregation of Mn, C, Ni, Si, Cu, Cr, O were found along the grain boundaries. The area of segregation was wide with an order of (001), (101), (111) grains. And hardness of grains with crystallographic orientation increased with an order of (001), (101), (111) grains because of the segregation along dendrite boundary.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.