• 제목/요약/키워드: Fe/Ni layer

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Electrochemical Performance of M2GeO4 (M = Co, Fe and Ni) as Anode Materials with High Capacity for Lithium-Ion Batteries

  • Yuvaraj, Subramanian;Park, Myung-Soo;Kumar, Veerasubramani Ganesh;Lee, Yun Sung;Kim, Dong-Won
    • Journal of Electrochemical Science and Technology
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    • v.8 no.4
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    • pp.323-330
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    • 2017
  • $M_2GeO_4$ (M = Co, Fe and Ni) was synthesized as an anode material for lithium-ion batteries and its electrochemical characteristics were investigated. The $Fe_2GeO_4$ electrode exhibited an initial discharge capacity of $1127.8mAh\;g^{-1}$ and better capacity retention than $Co_2GeO_4$ and $Ni_2GeO_4$. A diffusion coefficient of lithium ion in the $Fe_2GeO_4$ electrode was measured to be $12.7{\times}10^{-8}cm^2s^{-1}$, which was higher than those of the other two electrodes. The electrochemical performance of the $Fe_2GeO_4$ electrode was improved by coating carbon onto the surface of $Fe_2GeO_4$ particles. The carbon-coated $Fe_2GeO_4$ electrode delivered a high initial discharge capacity of $1144.9mAh\;g^{-1}$ with good capacity retention. The enhanced cycling performance was mainly attributed to the carbon-coated layer that accommodates the volume change of the active materials and improves the electronic conductivity. Our results demonstrate that the carbon-coated $Fe_2GeO_4$ can be a promising anode material for achieving high energy density lithium-ion batteries.

Effect of plasma oxidation time on TMR devices prepared by a ICP sputter (ICP 스퍼터를 이용한 TMR 소자 제작에서 절연막의 플라즈마 산화시간에 따른 미세구조 및 자기적 특성 변화)

  • Lee, Yeong-Min;Song, O-Seong
    • Korean Journal of Materials Research
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    • v.11 no.10
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    • pp.900-906
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    • 2001
  • We prepared tunnel magnetoresistance(TMR) devices of Ta($50\AA$)/NiFe($50\AA$)/IrMn(150$\AA$)/CoFe($50\AA$)/Al ($13\AA$)-O/CoFe($40\AA$)/NiFe($400\AA$)/Ta(50$\AA$) structure which has 100$\times$100 $\mu\textrm{m}^2$ junction area on $2.5\Times2.5 cm^{2}$ $Si/SiO_2$ ($1000\AA$) substrates by a inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using a ICP plasma oxidation method by varying oxidation time from 80 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We used a high resolution transmission electron microscope(HRTEM) to investigate microstructural evolution of insulating layer. The average resistance of devices increased from 16.38 $\Omega$ to 1018 $\Omega$ while MR ratio decreased from 30.31 %(25.18 %) to 15.01 %(14.97 %) as oxidation time increased from 80 sec to 360 sec. The values in brackets are calculated values considering geometry effect. By comparing cross-sectional TEM images of 220 sec and 360 sec-oxidation time, we found that insulating layer of 360 sec-oxidized was 30 % and 40% greater than that of 150 sec-oxidized in thickness and thickness variation, respectively. Therefore, we assumed that increase of thickness variation with oxidation time is major reason of MR decrease. The resistance of 80 sec-oxidized specimen was 160 k$\Omega$$\mu\textrm{m}^2$ which is appropriate for industrial needs of magnetic random access memory(MRAM) application.

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Magnetoresistance Properties of Hybrid GMR-SV Films with Nb Buffer Layers (Nb 버퍼층과 거대자기저항-스핀밸브 하이브리드 다층박막의 자기저항 특성)

  • Yang, Woo-Il;Choi, Jong-Gu;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.27 no.3
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    • pp.82-86
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    • 2017
  • The IrMn based GMR-SV films with three different buffer layers were prepared on Corning glass by using ion beam deposition and DC magnetron sputtering method. The major and minor magnetoresistance curves for three different buffer layers beneath the structure of NiFe(15 nm)/CoFe(5 nm)/Cu(2.5 nm)/CoFe(5 nm)/NiFe(7 nm)/IrMn(10 nm)/Ta(5 nm) at room temperature have shown different magnetoresistance properties. When the samples were annealed at $250^{\circ}C$ in vacuum, the magnetoresistance ratio, the coercivity of pinned ferromagnetic layer, and the interlayer coupling field of free ferromagnetic layer were enhanced while the exchange bias coupling field did not show noticeable changes.

Oxidation Behavior around the Stress Corrosion Crack Tips of Alloy 600 under PWR Primary Water Environment (PWR 1차측 환경에서 Alloy 600 응력부식균열 선단 부근에서의 산화 거동)

  • Lim, Yun Soo;Kim, Hong Pyo;Hwang, Seong Sik
    • Corrosion Science and Technology
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    • v.11 no.4
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    • pp.141-150
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    • 2012
  • Stress corrosion cracks in Alloy 600 compact tension specimens tested at $325^{\circ}C$ in a simulated primary water environment of pressurized water reactor were analyzed by analytical transmission electron microscopy and secondary ion mass spectroscopy (SIMS). From a fine-probe chemical analysis, oxygen was found on the grain boundary just ahead of the crack tip, and chromium oxides were precipitated on the crack tip and the grain boundary attacked by the oxygen diffusion, leaving a Cr/Fe depletion (or Ni enrichment) zone. The oxide layer inside the crack was revealed to consist of a double (inner and outer) layer. Chromium oxides existed in the inner layer, with NiO and (Ni,Cr) spinels in the outer layer. From the nano-SIMS analysis, oxygen was detected at the locations of intergranular chromium carbides ahead of the crack tip, which means that oxygen diffused into the grain boundary and oxidized the surfaces of the chromium carbides. The intergranular chromium carbide blunted the crack tip, thereby suppressing the crack propagation.

Soft Magnetoresistive Properties of Conetic Thin Film Depending on Ta Buffer Layer (버퍼층 Ta에 의존하는 코네틱 박막의 연자성 자기저항 특성)

  • Choi, Jong-Gu;Hwang, Do-Guwn;Lee, Sang-Suk;Choi, Jin-Hyub;Lee, Ky-Am;Rhee, Jang-Rho
    • Journal of the Korean Magnetics Society
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    • v.19 no.6
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    • pp.197-202
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    • 2009
  • The property of soft magnetism for the Corning glass/non-buffer or buffer Ta/Conetic(NiFeCuMo)/Ta prepared by the ion beam deposition sputtering was studied. The effect of crystal property and post annealing treatment depending on the thickness of Conetic thin films was investigated. The coercivities of Conetic thin films with easy and hard direction along to the applying magnetic field during deposition were compared with each other. The coercivity and magnetic susceptibility of Ta(5 nm)/Conetic(50 nm) thin film were 0.12 Oe and 1.2 ${\times}\;10^4$, respectively. From these results, firstly, the Conetic thin film was more soft magnetism thin film than other one such as permalloy NiFe. Secondly, the usage of soft magnetism Conetic thin film for GMR-SV (giant magneoresistance-spin valve) or MTJ (Megnetic Tunnel Junction) structure in a low magnetic field can be possible.

Morphologies of Brazed NiO-YSZ/316 Stainless Steel Using B-Ni2 Brazing Filler Alloy in a Solid Oxide Fuel Cell System

  • Lee, Sung-Kyu;Kang, Kyoung-Hoon;Hong, Hyun-Seon;Woo, Sang-Kook
    • Journal of Powder Materials
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    • v.18 no.5
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    • pp.430-436
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    • 2011
  • Joining of NiO-YSZ to 316 stainless steel was carried out with B-Ni2 brazing alloy (3 wt% Fe, 4.5 wt% Si, 3.2 wt% B, 7 wt% Cr, Ni-balance, m.p. 971-$999^{\circ}C$) to seal the NiO-YSZ anode/316 stainless steel interconnect structure in a SOFC. In the present research, interfacial (chemical) reactions during brazing at the NiO-YSZ/316 stainless steel interconnect were enhanced by the two processing methods, a) addition of an electroless nickel plate to NiO-YSZ as a coating or b) deposition of titanium layer onto NiO-YSZ by magnetron plasma sputtering method, with process variables and procedures optimized during the pre-processing. Brazing was performed in a cold-wall vacuum furnace at $1080^{\circ}C$. Post-brazing interfacial morphologies between NiO-YSZ and 316 stainless steel were examined by SEM and EDS methods. The results indicate that B-Ni2 brazing filler alloy was fused fully during brazing and continuous interfacial layer formation depended on the method of pre-coating NiO-YSZ. The inter-diffusion of elements was promoted by titanium-deposition: the diffusion reaction thickness of the interfacial area was reduced to less than 5 ${\mu}m$ compared to 100 ${\mu}m$ for electroless nickel-deposited NiO-YSZ cermet.

Improved Performance of Lithium-Ion Batteries using a Multilayer Cathode of LiFePO4 and LiNi0.8Co0.1Mn0.1O2

  • Hyunchul Kang;Youngjin Kim;Taeho Yoon;Junyoung Mun
    • Journal of Electrochemical Science and Technology
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    • v.14 no.4
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    • pp.320-325
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    • 2023
  • In Li-ion batteries, a thick electrode is advantageous for lowering the inactive current collector portion and obtaining a high energy density. One of the critical failure mechanisms of thick electrodes is inhomogeneous lithiation and delithiation owing to the axial location of the electrode. In this study, it was confirmed that the top layer of the composite electrode contributes more to the charging step owing to the high ionic transport from the electrolyte. A high-loading multilayered electrode containing LiFePO4 (LFP) and LiNi0.8Co0.1Mn0.1O2 (NCM811) was developed to overcome the inhomogeneous electrochemical reactions in the electrode. The electrode laminated with LFP on the top and NCM811 on the bottom showed superior cyclability compared to the electrode having the reverse stacking order or thoroughly mixed. This improvement is attributed to the structural and interfacial stability of LFP on top of the thick electrode in an electrochemically harsh environment.

A Study on Bonding Strength and Interfacial Structure of Copper-Stainless Steel Brazed Joint(ll) (동-스테인리스 강 브레이징 접합부의 계면조직과 접합강도에 관한 연구(ll))

  • Lee, U-Cheon;Gang, Chun-Sik;Jeong, Jae-Pil;Lee, Bo-Yeong
    • Korean Journal of Materials Research
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    • v.3 no.6
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    • pp.668-677
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    • 1993
  • The microstructural and shear tests of STS304/, STS430/ and low-C steel/Cu joints brazed using Cu-P, Cu-P-Sn(four type) and Cu-P-Sn-Ag(three type) filler metals at 1003 and 1033K for 1.2ks in Ar atomsphere were performed. Interfacial microstructures were divided into three type ; first, reaction layer contained cracks second, dispersed layer without cracks third, dispersed layer and reaction layer contained cracks. The joints composed only of dispersed layer without cracks have the high shear strength of above 40-60 MPa and result in failure in copper base metal. Low shear strength and joint failure result from the formation of reaction layer which induced cracks. The reaction layer is a Fe-P compound. This tendency of microstructure and shear strength depends on the existence and/or nonexistence of Sn in filler metals as well as Ni (and Cr) in base metals.

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The Electromagnetic Properties in Uncoupled funnel-junction with Various Cr Seed Layer (비결합형 터널접합구조에서 Cr 하지층에 따른 전자기적 특성변화)

  • Park, J.W.;Jeon, D.M.;Yoon, S.Y.;Lee, J.Y.;Suh, S.J.
    • Journal of the Korean Magnetics Society
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    • v.13 no.3
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    • pp.91-96
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    • 2003
  • Cross-geometrical Cr/Co/Al-Ox/Co/Ni-Fe tunnel junctions were fabricated by magnetron sputtering. To form an insulating layer, The Al layer was oxidized in an atmosphere of oxygen-argon mixture at low power after deposition. To enhance the coercivity of the bottom Co layer, The Cr seed layer was deposited on the glass and it led to increase in coercivity. The coercivity increase is due to the increase of roughness through the Cr thickness. In over oxidation time, the oxidation of Co bottom layer and flat interface of insulator can increase the bottom Co coercivity. But TMR ratio gradually decrease. TMR ratio is relevant with Cr thickness, insulator thickness, and oxidation time. The maximum TMR ratio was 14% at room temperature and the TMR ratio was decreased to half at 0.51 V.

Magnetoresistive and Pinning Direction Behaviors of Synthetic Spin Valves with Different Pinning Layer Thickness

  • Cho, Ho-Gun;Kim, Young-Keun;Lee, Seong-Rae
    • Journal of Magnetics
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    • v.7 no.4
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    • pp.147-150
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    • 2002
  • The pinning direction, the spin flop behaviors and the magnetoresistive properties in top synthetic spin valve structure [NiFe/CoFe/Cu/CoFe (t$_{p2}$)/Ru/CoFe (t$_{p1}$)/IrMn] were investigated. The magnetoresistive and pinning characteristics of synthetic spin valves strongly depended on the differences in the two pinning layer thickness, ${\Delta}t(=t_{p2}-t_{p1})$. In contrast to the conventional spin valves, the pinning direction (P1) was canted off with respect to the growth field axis with ${\Delta}t$. We found that the canting angle ${\Phi}$ had different values according to the annealing field direction and ${\Delta}t$. When the samples were annealed at above the blocking temperature of IrMn with zero fields, the canted pinned layer could be set along the growth field axis. Because the easy axis which was induced by the growth field during deposition is still active in all ferromagnetic layers except the IrMn at $250{^{\circ}C}$, the pinning direction could be aligned along the growth field axis, even in 0 field annealing.