• Title/Summary/Keyword: Fe/MgO

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Development of Mg-xFe2O3-yNi Hydrogen-Storage Alloys by Reactive Mechanical Grinding

  • Song, Myoung Youp;Kwon, Sung Nam;Park, Hye Ryoung
    • Korean Journal of Metals and Materials
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    • v.50 no.10
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    • pp.769-774
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    • 2012
  • Mg-x wt% $Fe_2O_3-y$ wt% Ni samples were prepared by reactive mechanical grinding in a planetary ball mill, and their hydrogen-storage properties were investigated and compared. Activations of $Mg-5Fe_2O_3-5Ni$ was completed after one hydriding (under 12 bar $H_2$) - dehydriding (in vacuum) cycle at 593 K. At n = 2, $Mg-5Fe_2O_3-5Ni$ absorbed 3.43 wt% H for 5 min, 3.57 wt% H for 10 min, 3.76 wt% H for 20 min, and 3.98 wt% H for 60 min. Activated $Mg-10Fe_2O_3$ had the highest hydriding rate, absorbing 2.99 wt% H for 2.5 min, 4.86 wt% H for 10 min, and 5.54 wt% H for 60 min at 593 K under 12 bar $H_2$. Activated $Mg-10Fe_2O_3-5Ni$ had the highest dehydriding rate, desorbing 1.31 wt% H for 10 min, 2.91 wt% H for 30 min, and 3.83 wt% H for 60 min at 593 K under 1.0 bar $H_2$.

High-Temperature Vaporization of $MgFe_2O_4$ in $H_2-CO_2$ Aatmosphere ($H_2-CO_2$ 분위기하에서 $MgFe_2O_4$의 고온증발)

  • 이홍림;최승철
    • Journal of the Korean Ceramic Society
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    • v.19 no.3
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    • pp.193-198
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    • 1982
  • The vaporization of $MgFe_2O_4$ was studied in $H_2-CO_2$ atmosphere over the temperature range of 600 to 90$0^{\circ}C$ by means of the transpiration method. It was found that the rate of vaporization for $MgFe_2O_4$ is controlled by a first order phase-boundary chemical reaction. The obtained activation energy of vaporization is 17.1 Kcal/mol.

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Growth of the single and epitaxial MgO film on Fe(001)

  • Kim, Hi-Dong;Dugerjav, Otgonbayar;Seo, Jae-M.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.355-355
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    • 2010
  • The epitaxial growth of MgO film on Fe(001) has been investigated by scanning tunneling microscopy (STM). After confirming the clean Fe(001)-c($2{\times}2$) substrate by STM, Mg was deposited at room temperature (RT) under $O_2$ partial pressure of $10^{-7}\;Torr$. The MgO was grown as clusters, not as an epilayer even after postannealing at $400^{\circ}C$, as shown in Figure (a). On the contrary, when Mg was deposited on Fe(001)-c($2{\times}2$) at RT and post-oxidized through exposing $O_2$ at partial pressure $10^{-7}\;Torr$, the thin-layered film with some clusters was formed. Extended-annealing at $400^{\circ}C$ reduced the cluster density, and finally the single and epitaxial MgO-c($2{\times}2$) film was formed on Fe(001)-c($2{\times}2$) as shown in Figure (b). This ultrathin MgO film formed on Fe is expected to be applied to many technological applications, such as catalysis, microelectronics, and magnetic devices.

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Effects of Sputtering Conditions on the Growth of Ag/CoFeB Layer on MgO(100) Substrate (MgO(100) 기판 위에 증착된 Ag/CoFeB 박막의 스퍼터링 조건에 따른 미세성장구조 변화 연구)

  • Jeon, Bo-Geon;Jeong, Jong-Ryul;Takahashi, Hirokazu;Tsunoda, Masakiyo;Takahashi, Migaku
    • Journal of the Korean Magnetics Society
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    • v.21 no.6
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    • pp.214-218
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    • 2011
  • In this study, we have systematically investigated the effect of sputtering conditions on the microstructural properties of Ag/CoFeB thin film on MgO substrate. It was found that the crystallinity and surface roughness of the Ag film strongly depends on the Ar sputtering pressure and sputtering power. Epitaxial growth of Ag(100) film on MgO(100) substrate was achieved under the sputtering conditions of high sputtering power and elevated temperature. XRR (X-ray reflectivity) and high-resolution TEM (transmission electron microscopy) measurements also revealed the interfacial roughening in the Ag/CoFeB interface due to the island structure formation and intermixing between Ag and CoFeB.

Preparation of FeB by SHS (Self Propagating High Temperature Synthesis) (자전연소합성법에 의한 FeB 분말의 제조)

  • Shin, Chang-Yun;Won, Chang-Whan
    • Journal of the Korean Ceramic Society
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    • v.45 no.7
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    • pp.418-422
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    • 2008
  • The preparation of FeB by SHS in $B_2O_3-Mg-Fe-Fe_3O_4$ system was investigated in this study. In the preparation of FeB, the effects of the initial pressure of inert gas in reactor, the content of Mg and $Fe_3O_4$ in mixture on the reactivity and reaction products was investigated. The minimum initial pressure of inert gas in reactor for SHS reaction in this system was 25 atm, and as the pressure increased, the concentration of unreacted Mg decreased and combustion temperature increased. At the initial inert gas pressure in reactor of 25 atm, the optimum composition for the preparation of pure FeB was $1.5B_2O_3$+3.43Mg+ 1.7Fe+$0.1Fe_3O_4$. The FeB synthesized in this condition had an irregular shape and the particle size of $5\;{\mu}m$.

Dielectric properties of $xPb (Fe_{1/2}Nb_{1/2}) O_3 - (1-x) Pb (Mg_{1/3}Nb_{2/3}) O_3$ ceramics prepared by the molten salt synthesis method (용융염 합성법에 의해 제조된 $xPb (Fe_{1/2}Nb_{1/2}) O_3 - (1-x) Pb (Mg_{1/3} Nb_{2/3}) O_3$ 계 세라믹스의 유전성)

  • 박경봉;김태희
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.5 no.2
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    • pp.152-164
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    • 1995
  • $xPb(Fe_{1/2}Nb_{1/2})O_3 - (1 - x)Pb(Mg_{1/3}Nb_{2/3})O_3$ powders were synthesized by the molten salt synthesis method using the NaC!- KCI flux with 1 : 1 molar ratio, and their powders and dielectric properties were investigated. The synthesized powders showed less agglomerated shape with the average particle size of less than $2 \mu\textrm{m}$. The composition $x0.3Pb(Fe_{1/2}Nb_{1/2})O_3-0.7Pb(Mg_{1/3}Nb_{2/3})O_3$ could be sintered at $1000{\times}C$ and its dielectric constnat was over 11, 000.

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Preparation and Characterization of MgO Doped $Fe_2O_3$ Semiconductive Electrodes for Water Photodissociation

  • Kim, Il-Kwang;Somorjai, Gabor A;Kim, Youn-Geun
    • Bulletin of the Korean Chemical Society
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    • v.12 no.1
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    • pp.13-17
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    • 1991
  • The preparation and characterization of semiconductive electrodes of MgO doped $Fe_2O_3$ were investigated. Pellets of MgO doped $Fe_2O_3$ were sintered at high temperatures between 1300$^{\circ}$C and 1400$^{\circ}$C and quenched rapidly in distilled water. The surfaces were analyzed by X-ray diffraction and scanning Auger electron spectroscopy. The surfaces of pellets contained both corundum structure ($Fe_2O_3$) and spinel structure ($Mg_xFe_{3-x}O_4$). Electrodes made of this material gave comparable anodic and cathodic photocurrents under illumination. The cathodic and anodic photocurrent on these photoelectrodes were verified high at 5-10 wt. percent that is critical doping amounts.

Effects of $TiO_2$ addition on the structural properties of ${MgFe_2}{O_4}$ ceramics for humidity sensor substrate ($TiO_2$가 습도센서용 ${MgFe_2}{O_4}$세라믹스의 구조적 특성에 미치는 영향)

  • 소지영;백동수;박창엽
    • Electrical & Electronic Materials
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    • v.5 no.4
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    • pp.406-410
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    • 1992
  • 본 논문에서는 MgFe$_{2}$O$_{4}$ 세라믹스의 구조적 특성을 개선하기 위하여 TiO$_{2}$를 0-10[wt%] 첨가하여 세라믹스를 만들고 TiO$_{2}$가 습도센서용 MgFe$_{2}$O$_{4}$ 세라믹스의 구조적 특성에 미치는 영향을 조사하였다. 각 시편은 TiO$_{2}$가 첨가되는 양이 증대함에 따라 NgTi$_{2}$O$_{5}$의 이상이 나타났다. TiO$_{2}$의 첨가량이 6[wt%]일 때 까지는 시편의 밀도가 증가하여 기공율의 저하를 가져왔고 기공의 크기가 최소가 되는 조성은 5[wt%]의 TiO$_{2}$가 첨가되었을 때이며 이때의 평균 기공의 크기는 1615[.angs.]이었다. 따라서 5[wt%]의 TiO$_{2}$를 첨가했을 때가 기공의 크기 조절에 최적이라고 생각되며 센서용 기판으로 응용하기 적합하다고 생각된다.

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A Study on $[Ni_x-Mg_{0.1}-Zn_{(1-x-0.1)}{\cdot}Fe_2O_4]$-Rubber Composite for Electromagnetic Wave Absorber (전파흡수체용 $[Ni_x-Mg_{0.1}-Zn_{(1-x-0.1)}{\cdot}Fe_2O_4]$-Rubber Composite에 관한 연구)

  • 박연준;김동일
    • Journal of the Korean Institute of Navigation
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    • v.22 no.4
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    • pp.69-75
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    • 1998
  • The super wideband electromagnetic wave absorber in RF-A-PF type has been proposed, which can be used for an anechoic chamber, wall material to prevent TV ghost, etc, In this paper, $Ni_x-Mg_{0.1}-Zn_(1-x-0.1){\cdot}Fe_2O_4$ Ferrite Powder has been fabricated. Using this, then, [$Ni_x-Mg_{0.1}-Zn_(1-x-0.1){\cdot}Fe_2O_4$-Rubber composite for RF-layer in the RF-A-PF type absorber has been fabricated and its characteristics has been analyzed. As a result, it has been shown that the $Ni_x-Mg_{0.1}-Zn_(1-x-0.1){\cdot}Fe_2O_4$-Rubber composit with the quantity $_x$ of $Ni_x$ between 0.5 and 0.6 is suitable for the RF-layer in the case of which the grain size is sub-micrometer order.

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