• Journal of The Korean Astronomical Society
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• v.36 no.spc1
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• pp.13-20
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• 2003

Observations have indicated that magnetic reconnect ion may occur frequently in the photosphere and chromosphere as well as in the solar corona. The observed features include cancelling magnetic features seen in photospheric magnetograms, and different kinds of small-scale activities such as UV explosive events and EUV jets. By integrating the observed parameters of these features with the Sweet-Parker reconnect ion theory, an attempt is made to clarify the nature of chromospheric magnetic reconnection. Our results suggest that magnetic reconnect ion may be occurring at many different levels of the photosphere and chromosphere without a preferred height and at a faster speed than is predicted by the Sweet-Parker reconnect ion model using the classical value of electric conductivity. Introducing an anomalous magnetic diffusivity 10-100 times the classical value is one of the possible ways of explaining the fast reconnect ion as inferred from observations.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.74-78
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• 2003

In this paper, we studied, by numerical calculation, a system, which was composed of metal-film and metal-substrate irradiated by IPIB with beam ion energy 250 keV, current density 10 to 250 A/$\textrm{cm}^2$. While the IPIB irradiation was going on, an induced effect named mixing occurred. In this case, metal-film and part of metal-substrate melted and mixed. The mixing state was kept as it was in melting phase due to the fast cooling rate. Our works were simulating the heating and cooling process via our STEIPIB program and tried to find proper parameters for a specific film-substrate system, 500 nmtitanium film coated on aluminum, to get best mixing results. The parameters calculated for such Ti-Al system were compared with the experimental results and were in good accordance to the experimental results.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2184-2186
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• 2005

Neutron production is very important to apply fusion energy through SCBF(Spherically Convergent Beam Fusion) device and its rate is Proportional to the square of the ion current$({\propto}I^2)$. Also the ion current has a close relation with the potential well structure in grid cathode. In this paper, the ion current is calculated for the increasement of neutron production rate in a variety of grid cathode geometry. The atomic and molecular collision are taken into account by Monte Carlo Method and Potential is calculated by Finite Element Method. Main processes of the discharge is the ionization of $D_2$ by fast $D_2^+$ ion. As the number of a cathode ring is small and gap distance decreases, the ion current increases and neutron production rate will increase.

• Progress in Medical Physics
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• v.31 no.3
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• pp.71-80
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• 2020

This paper provides a brief review of the advanced technologies for carbon ion radiotherapy (CIRT), with a focus on current developments. Compared to photon beam therapy, treatment using heavy ions, especially a carbon beam, has potential advantages due to its physical and biological properties. Carbon ion beams with high linear energy transfer demonstrate high relative biological effectiveness in cell killing, particularly at the Bragg peak. With these unique properties, CIRT allows for accurate targeting and dose escalation for tumors with better sparing of adjacent normal tissues. Recently, the available CIRT technologies included fast pencil beam scanning, superconducting rotating gantry, respiratory motion management, and accurate beam modeling for the treatment planning system. These techniques provide precise treatment, operational efficiency, and patient comfort. Currently, there are 12 CIRT facilities worldwide; with technological improvements, they continue to grow in number. Ongoing technological developments include the use of multiple ion beams, effective beam delivery, accurate biological modeling, and downsizing the facility.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.4
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• pp.302-306
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• 2019

We investigated a solution-derived $Y_2O_3$ film treated by ion beam (IB) irradiation as a liquid crystal (LC) alignment layer. With IB irradiation, homogeneous LC alignment was achieved irrespective of the annealing temperature. To verify the effect of IB irradiation, we conducted surface analyses such as X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). As $Y_2O_3$ is a high-k material, the electro-optical properties of the twisted nematic (TN) cells were superior to those of conventional TN cells based on a rubbed polymer, with an LC rising time of 4.1ms and falling time of 2.9ms. The IB-irradiated $Y_2O_3$ is a good alternative as an alignment layer for fast-switching TN LC displays.

• Nuclear Engineering and Technology
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• v.54 no.6
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• pp.2334-2337
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• 2022

Deuterium-tritium reaction is the most promising one in term of the highest nuclear fusion cross-section for the reactor. So it is one of urgent issues to develop materials and components that are simultaneously resistant to high heat flux and high energy neutron flux in realization of the fusion energy. 2.45 MeV neutron production was reported in D-D reaction in KSTAR and regarded as beam-target is the dominant process. The feasibility study of KSTAR to wide area neutron source facility is done in term of D-D and D-T reactions from the empirical scaling law from the mixed fast and thermal stored energy and its projection to cases of heating power upgrade and DT reaction is done.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.2
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• pp.160-166
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• 2015

This study proposes an improved cell balancing circuit for fast equalization among lithium-ion (Li-ion) batteries. A simple voltage sensorless charge balancing circuit has been proposed in the past. This cell balancing circuit automatically transfers energy from high-to low-voltage battery cells. However, the circuit requires a switch with low on-resistance because the balancing speed is limited by the on-resistance of the switch. Balancing speed decreases as the voltage difference among the battery cells decrease. In this study, the balancing speed of the cell balancing circuit is enhanced by using the auxiliary circuit, which boosts the balancing current. The charging current is determined by the nominal battery cell voltage and thus, the balancing speed is almost constant despite the very small voltage differences among the batteries. Simulation results are provided to verify the validity of the proposed cell balancing circuit.

• Proceedings of the KIPE Conference
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• 2015.11a
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• pp.7-8
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• 2015

In this paper a cell-to-cell fast charge balancing circuit for the Lithium-Ion battery module is proposed. In the proposed topology the energy in a high voltage cell is transferred directly to a low voltage cell through the operation of the dc-dc converter. Furthermore, the charge balancing can be performed regardless of the battery operation whether it is being charged, discharged or relaxed. The monitoring circuit composed of a DSP and a battery monitoring IC is designed to monitor the cell voltage and detect the inferior cell thereby protecting the battery module from failure. In order to demonstrate the performance of the proposed topology, a prototype circuit was designed and applied to 12 Lithium-Ion battery module. It has been verified with the experiments that the charge equalization time of the proposed method was shorter compared with those of other methods.

• Bulletin of the Korean Chemical Society
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• v.19 no.8
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• pp.830-835
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• 1998

The characteristics of the ablation plume generated by 532 nm Nd: YAG laser irradiation of a Pb(Zr0.52Ti0.48)O3 (PZT) target have been investigated using a pulsed-field time-of-flight mass spectrometer (TOFMS). The relative abundance of O+, Ti+, Zr+, Pb+, TiO+, and ZrO+ ions has been measured and discussed. TiO+ and ZrO+ ions were also found to be particularly stable within the laser ablation plasma with respect to PbO+ species. The behavior of the temporal distributions of each ionic species was studied as a function of the delay time between the laser shot and the ion extraction pulse. The most probable velocity of each ablated ion is estimated to be Vmp=1.1-1.6x 105 cm/s at a laser fluence of 1.2 J/cm2, which is typically employed for the thin film deposition of PZT. The TOF distribution of Ti+ and Zr+ ions shows a trimodal distribution with one fast and two slow velocity components. The fast velocity component (6.8x 10' cm/s) appears to consist of directly ablated species via nonthermal process. The second component, originated from the thermal evaporation process, has a characteristic velocity of 1.4-1.6 x 105 cm/s. The slowest component (1.2 x 105 cm/s) is composed of a dissociation product formed from the corresponding oxide ion.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.408-408
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• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.