• 제목/요약/키워드: Fast ion

검색결과 318건 처리시간 0.029초

Novel Copper(Ⅱ)-Selective Senor Based on a New Hexadentates Schiff's Base

  • Ganjali, Mohammad Reza;Emami, Mehdi;Salavati Niasari, Masoud
    • Bulletin of the Korean Chemical Society
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    • 제23권10호
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    • pp.1394-1398
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    • 2002
  • A novel copper(II) membrane electrode based on diphenylisocyanate bis(acetylacetone) ethylenediimine (DIBAE), as a new hexadentates Schiff's base was prepared. The electrode exhibited a Nernstian response for Cu$^{2+}$ ions over a wide concentration range (1.0 ${\times}$ 10$^{-1}$ to 1.0 ${\times}$ l0$^{-6}$ M) with a limit of detection of 6.0 ${\times}$ 10$^{-7}$ M (39 ppb). The sensor shows a fast response time (15s) and the membrane can be used for more than 4 months without observing any major deviation. The electrode revealed very good selectivity with respect to many cations including alkali, alkaline earth, transition and heavy metal ions. The proposed sensor could be used in a pH range of 3.0-7.5. It was applied to the direct potentiometric determination of copper in black tea, and in wastewater of copper electroplating samples. The electrode was also used in potentiometric titration of the copper(II) ion with EDTA.

Techno-Economic Optimization of a Grid-Connected Hybrid Energy System Considering Voltage Fluctuation

  • Saib, Samia;Gherbi, Ahmed;Kaabeche, Abdelhamid;Bayindir, Ramazan
    • Journal of Electrical Engineering and Technology
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    • 제13권2호
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    • pp.659-668
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    • 2018
  • This paper proposes an optimization approach of a grid-connected photovoltaic and wind hybrid energy system including energy storage considering voltage fluctuation in the electricity grid. A techno-economic analysis is carried out in order to minimize the size of hybrid system by considering the benefit-cost. Lithium-ion battery type is used for both managing the electricity selling to the grid and reducing voltage fluctuation. A new technique is developed to limit the voltage perturbation caused by the solar irradiance and the wind speed through determining the state-of-charge of battery for every hour of a day. Improved particle swarm optimization (PSO) methods, referred to as FC-VACPSO which combines Fast Convergence Particle Swarm Optimization (FCPSO) method and Variable Acceleration Coefficient Based Particle Swarm Optimization (VACPSO) method are used to solve the optimization problem. A comparative study has been performed between standard PSO method and PSO based methods to extract the best size with the benefit cost. A sensitivity analysis has been studied for different kinds and costs of batteries, by considering variable and constant state-ofcharge of battery. The simulations, performed under Matlab environment, yield good results using the FC-VACPSO method regarding the convergence and the benefit cost of the hybrid system.

Synthesis of a New Hexadendates Schiff's Base and Its Application in the Fabrication of a Highly Selective Mercury(II) Sensor

  • Ganjali, M.R.;Norouzi, P.;Alizadeh, T.;Salavati-Niasari, M.
    • Bulletin of the Korean Chemical Society
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    • 제28권1호
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    • pp.68-72
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    • 2007
  • A new PVC membrane potentiometric sensor that is highly selective to Hg2+ ions was prepared, using bis(2-hydroxybenzophenone) butane-2,3-dihydrazone (HBBD) as an excellent hexadendates neutral carrier. The sensor works satisfactorily in the concentration range of 1.0 × 10-6 to 1.0 × 10-1 mol L-1 (detection limit 4 × 10-7 mol L-1) with a Nernstian slope of 29.7 mV per decade. This electrode showed a fast response time (~8 s) and was used for at least 12 weeks without any divergence. The sensor exhibits good Hg2+ selectivity for a broad range of common alkali, alkaline earth, transition and heavy metal ions (lithium, sodium, potassium, magnesium, calcium, copper, nickel, cobalt, zinc, cadmium, lead and lanthanum). The electrode response is pH independent in the range of 1.5-4.0. Furthermore, the developed sensor was successfully used as an indicator electrode in the potentiometric titration of mercury ions with potassium iodide and the direct determination of mercury in some binary and ternary mixtures.

Design Study for Pulsed Proton Beam Generation

  • Kim, Han-Sung;Kwon, Hyeok-Jung;Seol, Kyung-Tae;Cho, Yong-Sub
    • Nuclear Engineering and Technology
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    • 제48권1호
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    • pp.189-199
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    • 2016
  • Fast neutrons with a broad energy spectrum, with which it is possible to evaluate nuclear data for various research fields such as medical applications and the development of fusion reactors, can be generated by irradiating proton beams on target materials such as beryllium. To generate short-pulse proton beam, we adopted a deflector and slit system. In a simple deflector with slit system, most of the proton beam is blocked by the slit, especially when the beam pulse width is short. Therefore, the available beam current is very low, which results in low neutron flux. In this study, we proposed beam modulation using a buncher cavity to increase the available beam current. The ideal field pattern for the buncher cavity is sawtooth. To make the field pattern similar to a sawtooth waveform, a multiharmonic buncher was adopted. The design process for the multiharmonic buncher includes a beam dynamics calculation and three-dimensional electromagnetic simulation. In addition to the system design for pulsed proton generation, a test bench with a microwave ion source is under preparation to test the performance of the system. The design study results concerning the pulsed proton beam generation and the test bench preparation with some preliminary test results are presented in this paper.

TiAlSiN 코팅의 대기중 고온산화 속도와 스케일 분석 (High-temperature Oxidation Kinekics and Scales Formed on the TiAlSiN film)

  • 지권용;박상환;김민정;박순용;정승부;이동복
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2015년도 춘계학술대회 논문집
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    • pp.131-132
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    • 2015
  • $Ti_{0.26}Al_{0.16}Si_{0.01}N_{0.57}$ (at%) coatings were synthesized on stainless steel 304 by using arc ion plating systems (AIPS). Targets employed for the deposition were Ti, AlSi(67:33at%) and AlSi(82:18at%). The thickness of TiAlSiN coatings is $4{\mu}m$. The oxidation characteristics of the deposited coatings were studied by thermogravimetric analysis (TGA) in air between 800 and $900^{\circ}C$ for 75 hr. The oxide scale formed on the TiAlSiN coatings consisted of $rutile-TiO_2$ layer and ${\alpha}-Al_2O_3$. At $800^{\circ}C$, the coatings oxidized relatively slowly, and the scales were thin and adherent. When oxidized above $900^{\circ}C$, $TiO_2$ grew fast over the mixed oxide layer, and the oxide scale formed on TiAlSiN coatings was prone to spallation. Microstructural changes of the TiAlSiN coatings that occurred during high temperature oxidation were investigated by EPMA, XRD, SEM and TEM.

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전기자동차 배터리 모듈용 직접 셀 전하 균등화 회로 (A Direct Cell-to-Cell Charge Balancing Circuit for the EV Battery Module)

  • 팜반롱;응웬킴헝;간 압둘바싯;최우진
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2015년도 전력전자학술대회 논문집
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    • pp.401-402
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    • 2015
  • In this paper a direct cell-to-cell charge balancing circuit which can transfer the charge from any cell to any cell in the battery string is introduced. In the proposed topology the energy in the high voltage cell is transferred to the low voltage cell through the simple operation of a dc-dc converter to get fast equalization. Furthermore, the charge equalization can be performed regardless of the battery module operation whether it is being charged, discharged or relaxed. The monitoring circuit composed of a DSP and a battery monitoring IC is designed to monitor the cell voltage and protect the battery. In order to demonstrate the advantages of the proposed topology, a prototype circuit was designed and applied to 12 Lithium-Ion battery module. It has been verified with the experiments that the charge equalization time of the proposed method was shortest compared with those of other methods.

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Dry Etching of BST using Inductively Coupled Plasma

  • Kim, Gwan-Ha;Kim, Kyoung-Tae;Kim, Dong-Pyo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • 제6권2호
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    • pp.46-50
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    • 2005
  • BST thin films were etched with inductively coupled CF$_{4}$/(Cl$_{2}$+Ar) plasmas. The etch characteristics of BST thin films as a function of CF$_{4}$/(Cl$_{2}$+Ar) gas mixtures were analyzed using optical emission spectroscopy (OES) and Langmuir probe. The BST films in CF$_{4}$/Cl$_{2}$/Ar plasma is mainly etched by the formation of metal chlorides which depends on the emission intensity of the atomic Cl and the bombarding ion energy. The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of CF$_{4}$ to the Cl$_{2}$/Ar mixture increased chemical and physical effect. A more fast etch rate of BST films can be obtained by increasing the DC bias and the RF power, and lowering the working pressure.

High density plasma etching of CoFeB and IrMn magnetic films with Ti hard mask

  • Xiao, Y.B.;Kim, E.H.;Kong, S.M.;Chung, C.W.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.233-233
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    • 2010
  • Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is a prominent candidate among prospective semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. The etching of MTJ stack with good properties is one of a key process for the realization of high density MRAM. In order to achieve high quality MTJ stack, the use of CoFeB and IrMn magnetic films as free layers was proposed. In this study, inductively coupled plasma reactive ion etching of CoFeB and IrMn thin films masked with Ti hard mask was investigated in a $Cl_2$/Ar gas mix. The etch rate of CoFeB and IrMn films were examined on varying $Cl_2$ gas concentration. As the $Cl_2$ gas increased, the etch rate monotonously decreased. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of CoFeB and IrMn thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of CoFeB and IrMn displayed better etch profiles. Finally, the clean and vertical etch sidewall of CoFeB and IrMn free layers can be achieved by means of thin Ti hard mask in a $Cl_2$/Ar plasma at the optimized condition.

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High density plasma etching of MgO thin films in $Cl_2$/Ar gases

  • Xiao, Y.B.;Kim, E.H.;Kong, S.M.;Chung, C.W.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.213-213
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    • 2010
  • Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.

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Synthesis and Spectral Characterization of Antifungal Sensitive Schiff Base Transition Metal Complexes

  • Raman, N.;Sakthivel, A.;Rajasekaran, K.
    • Mycobiology
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    • 제35권3호
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    • pp.150-153
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    • 2007
  • New $N_2O_2$ donor type Schiff base has been designed and synthesized by condensing acetoacetanilido-4-aminoantipyrine with 2-aminobenzoic acid in ethanol. Solid metal complexes of the Schiff base with Cu(II), Ni(II), Co(II), Mn(II), Zn(II), VO(IV), Hg(II) and Cd(II) metal ions were synthesized and characterized by elemental analyses, magnetic susceptibility, molar conduction, fast atom bombardment (FAB) mass, IR, UV-Vis, and $^1H$ NMR spectral studies. The data show that the complexes have the composition of ML type. The UV-Vis. and magnetic susceptibility data of the complexes suggest a square-planar geometry around the central metal ion except VO(IV) complex which has square-pyramidal geometry. The in vitro antifungal activities of the compounds were tested against fungi such as Aspergillus niger, Aspergillus flavus, Rhizopus stolonifer, Candida albicans, Rhizoctonia bataicola and Trichoderma harizanum. All the metal complexes showed stronger antifungal activities than the free ligand. The minimum inhibitory concentrations (MIC) of the metal complexes were found in the range of $10{\sim}31{\mu}g/ml$.