• 제목/요약/키워드: Fast Transfer

검색결과 593건 처리시간 0.033초

Recent Advances with the 3M PDP High Resolution Rib Replication Process

  • McGuire, P.;Cha, J.C.;Kikuchi, H.;Yoda, A.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.313-315
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    • 2007
  • 3M has developed a Precision Replication Process for the production of PDP Barrier Ribs and other display devices. This process, is fast, clean and capable of producing very high resolution (FHD and beyond), high aperture ratio and fine cell structures. Recent advances in materials and process features will be discussed.

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두 가닥 초전도 케이블에서 자속변화한계와 전류 재분배 해석 (Analysis of ramp-rate limitation and current redistribution in two-strand superconducting cable)

  • 김석호;정상권
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2003년도 추계학술대회 논문집
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    • pp.45-48
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    • 2003
  • Ramp-rate limitation is a serious obstacle for successful operation of fast charging and discharging magnet Ramp-rate limitation is hard to expect or fully investigate due to its electric and thermo-hydraulics couplings. In this paper, the simplest case of ramp-rate limitation is investigated with two-strand superconducting cable model considering transient heat transfer The simulation results are compared with the experimental results.

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핵분열 중성자스펙트럼이 핵계산에 미치는 영향 (Effects of Fission Neutron Spectra in Reactor Calculations)

  • 김정도;이종태
    • Nuclear Engineering and Technology
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    • 제15권4호
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    • pp.280-285
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    • 1983
  • 핵분열 중성자스펙트럼이 원자로핵계산에 미치는 영향을 고속임계로심의 임계계산을 통해 다각적으로 분석하였다. 검토된 내용은 Maxwell식과 Watt-Cranberg 형의 식 적용, 영역별 스펙트럼자료의 적용, Maxwell식에서 핵온도 선정에 따른 효과, 우라늄과 풀루토늄의 가중평균된 스펙트럼자료의 적용, 노심내 전에너지에 따른 핵온도를 고려한 스펙트럼자료의 적용 등이다.

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Model Predictive Voltage Control for Seamless Transfer of DC-DC Converters in ESS Applications

  • Le, Duc Dung;Lee, Dong-Choon
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2017년도 전력전자학술대회
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    • pp.369-370
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    • 2017
  • In this paper, a model predictive voltage control (MPVC) for the DC-DC buck-boost converters is proposed. It provides a fast seamless bidirectional control method to maintain the DC grid voltage, battery voltage and current within predefined limits. In addition, an inner current control loop is not employed, so that the bandwidth of controller can be higher compared with the PI controller.

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Bio-Electronics

  • 최정우
    • 한국생물공학회:학술대회논문집
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    • 한국생물공학회 2000년도 추계학술발표대회 및 bio-venture fair
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    • pp.123-126
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    • 2000
  • Bio-electronics has been considered as one of the most appropriate candidates to overcome the frequently encountered problems in the development of future electronic devices. It has some advantages such as ultra fast electron transfer rate and high-energy efficiency compared with the silicon-based electronic devices. In silicon-based electronics, there are some of limitations of manufacturing process and physical problems. Bio-electronics can overcome the limitation and problem of silicon-based electronics. Bio-electronics has possible application areas as biosensor, biochip, bio-transistor and bio-computer. In the future, bio-electronics can substitute the silicon-based electronics.

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화염 전달함수 및 DMD 기법을 이용한 모형 가스터빈의 연소불안정성 평가 (Evaluation of Combustion Instability in a Model Gas Turbine Adopting Flame Transfer Function and Dynamic Mode Decomposition)

  • 손진우;손채훈;윤지수;윤영빈
    • 한국연소학회지
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    • 제22권2호
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    • pp.1-8
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    • 2017
  • To evaluate the combustion instability of a gas turbine combustor, the DMD technique was applied. The mode frequency results for each fuel composition were compared with FFT(Fast Fourier Transform) results. The damping coefficient, which is a quantitative parameter for combustion instability, was evaluated for 5 experimental cases. The flame transfer function (FTF) was calculated in the most unstable test case. In deriving the FTF, gain and phase were calculated using DMD technique. As a result of the analysis of the OH radical perturbation of the DMD, the heat release fluctuation was the highest at 100 Hz, at which the highest value of gain is observed. The frequency of FFT and FTF were different. In order to clarify the reason for this, FTF for various resonance frequencies was performed and it shows that the pattern of gain was similar to FFT.

Introduction to Simulation Activity for CMDPS Evaluation Using Radiative Transfer Model

  • Shin, In-Chul;Chung, Chu-Yong;Ahn, Myoung-Hwan;Ou, Mi-Lim
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 2007년도 Proceedings of ISRS 2007
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    • pp.282-285
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    • 2007
  • Satellite observed brightness temperature simulation using a radiative transfer model (here after, RTM) is useful for various fields, for example sensor design and channel selection by using theoretically calculated radiance data, development of satellite data processing algorithm and algorithm parameter determination before launch. This study is focused on elaborating the simulation procedure, and analyzing of difference between observed and modelled clear sky brightness temperatures. For the CMDPS (COMS Meteorological Data Processing System) development, the simulated clear sky brightness temperatures are used to determine whether the corresponding pixels are cloud-contaminated in cloud mask algorithm as a reference data. Also it provides important information for calibrating satellite observed radiances. Meanwhile, simulated brightness temperatures of COMS channels plan to be used for assessing the CMDPS performance test. For these applications, the RTM requires fast calculation and high accuracy. The simulated clear sky brightness temperatures are compared with those of MTSAT-1R observation to assess the model performance and the quality of the observation. The results show that there is good agreement in the ocean mostly, while in the land disagreement is partially found due to surface characteristics such as land surface temperature, surface vegetation, terrain effect, and so on.

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Disease Occurrence in Transgenic Rice Plant Transformed with Silbene Synthase Gene and Evaluation of Possible Horizontal Gene Transfer to Plant Pathogens

  • Yu, Sang-Mi;Jeong, Ui-Seon;Lee, Ha Kyung;Baek, So Hyeon;Kwon, Soon Jong;Lee, Yong Hoon
    • 식물병연구
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    • 제20권3호
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    • pp.189-195
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    • 2014
  • Genetic engineering is being used to enhance disease resistance and nutritional value of crops including rice plant. Considering the fast-growing agricultural biotechnology and rapidly increasing global area of transgenic crops, the risk evaluation on environment is necessary. In this study, we surveyed the difference of disease occurrence between transgenic rice variety, Iksan526 transformed with peanut stilbene synthase gene and non-transgenic rice varieties, Dongjin and Nampyeong in the field. Moreover, the possibility of gene transfer from transgenic rice to bacterial and fungal pathogens was investigated. The results of this study indicated that there was no significant difference in the occurrence and severity of the diseases between Iksan526 and Dongjin or Nampyeong. In addition, the results suggested that rice pathogen, such as Xanthomonas oryzae pv. oryzae, Rhizoctonia solani and Magnaporthe grisea did not take up stilbene synthase and bar genes under natural conditions. Moreover the transformed DNA was not transferred to the pathogens even in repetitive contacts.

머리전달함수 측정법의 실험적 비교 (Comparison of Measurement Methods for Head-related Transfer Function(HRTF))

  • 안태수;이두호
    • 한국소음진동공학회논문집
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    • 제19권12호
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    • pp.1260-1268
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    • 2009
  • Three methods(the stepped sine method, the statistical method(random excitation method) and the maximum-length sequence(MLS) method) for head-related transfer functions(HRTFs) are experimentally compared in view point of accuracy and efficiency. First, the stepped sine method has high signal-to-noise ratio, but low efficiency. Second, the statistical method is fast measurement speed, but weak to noise than the other methods. Finally, the MLS method shows both good efficiency and high signal-to-noise ratio, but it needs additional software or equipment such as MLS signal generator. For comparison of measurement accuracy, HRTFs of KEMAR dummy are measured for various azimuths and elevations. Error norms for magnitude and phase of HRTFs are defined and calculated for the measured HRTFs. The calculated error norms show that the methods give similar results in magnitude and phase except a little phase difference in the MLS method.

Effects of Residual PMMA on Graphene Field-Effect Transistor

  • Jung, J.H.;Kim, D.J.;Sohn, I.Y.;Lee, N.E.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.561-561
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    • 2012
  • Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as fast electron mobility, high thermal conductivity and optical transparency, and also found many applications such as field-effect transistors (FET), energy storage and conversion, optoelectronic device, electromechanical resonators and chemical sensors. Several techniques have been developed to form the graphene. Especially chemical vapor deposition (CVD) is a promising process for the large area graphene. For the electrically isolated devices, the graphene should be transfer to insulated substrate from Cu or Ni. However, transferred graphene has serious drawback due to remaining polymeric residue during transfer process which induces the poor device characteristics by impurity scattering and it interrupts the surface functionalization for the sensor application. In this study, we demonstrate the characteristics of solution-gated FET depending on the removal of polymeric residues. The solution-gated FET is operated by the modulation of the channel conductance by applying a gate potential from a reference electrode via the electrolyte, and it can be used as a chemical sensor. The removal process was achieved by several solvents during the transfer of CVD graphene from a copper foil to a substrate and additional annealing process with H2/Ar environments was carried out. We compare the properties of graphene by Raman spectroscopy, atomic force microscopy(AFM), and X-ray Photoelectron Spectroscopy (XPS) measurements. Effects of residual polymeric materials on the device performance of graphene FET will be discussed in detail.

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