• 제목/요약/키워드: Fast Switching

검색결과 560건 처리시간 0.031초

예측 제어 기법을 적용한 3상 PWM AC/DC 콘버터의 역률개선 (Power Factor Correction of the Three Phase PWM AC/DC Converter Using Predicted Control Strategy)

  • 백종현;최종수;홍성태
    • 전자공학회논문지S
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    • 제34S권11호
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    • pp.156-163
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    • 1997
  • Recently, the three phase AC to DC boost converter has become one of the most widely used power converters as DC power source in the industry applications. In this paepr, a three phase PWM AC toDC boost converter that operates with unity power factor and sinusodial input currents is presented. The current control of the converter is based onthe predicted current control strategy with fixed switching frequency and the input current tracks the reference cuent within one sampling time interval. Therefore, by using this control strategy low ripples in the output voltage, low harmonics in the input current and fast dynamic responses are achieved with a small capacitance in the DC link.

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V/UHF 대역 SP3T 송수신 스위치 설계 (Design of V/UHF-Band SP3T Transmitting/Receiving Switch)

  • 이병남;박동철
    • 한국군사과학기술학회지
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    • 제11권5호
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    • pp.34-41
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    • 2008
  • This paper describes the design of SP3T PIN diode switch which has a 500W high power handling capability in $20{\sim}400MHz$ frequency range. Design factors were investigated and it was confirmed by simulation that the characteristics of insertion loss, VSWR, and isolation met design goal. Also, the capability to handle 500W high power with very fast switching speed of less than $26{\mu}s$ was confirmed and insertion loss of less than 1dB, VSWR of less than 1.4:1, and isolation of higher than 60dB were obtained by experiments.

Wide-Viewing Display Configuration of Heilix-Deformed Ferroelectric Liquid Crystals

  • Lee, Ju-Hyun;You, Doo-Hwan;Park, Jae-Hong;Lee, Sin-Doo;Yu, Chang-Jae
    • Journal of Information Display
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    • 제1권1호
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    • pp.20-24
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    • 2000
  • We propose on a novel vertical configuration (VC) for a helix-deformed ferroelectric liquid crystal (HDFLC) display that has fast response, high contrast, analog gray scale capability, and wide-viewing characteristics. In contrast to a conventional HDFLC in a planar geometry, smectic layers arrange themselves parallel to the substrates, and thus, extremely uniform alignment of molecules in large area is naturally achieved in our new configuration without additional processes such as the rubbing and/or electric field treatment. Moreover, with a proper design of electrode patterns on the same substrate, multidomain switching is easily realized without employing any complex process of alignment. Our new VC-HDFLC is expected to provide a viable technology to produce a next-generation large area LCD suitable for processing the dynamic image at a video-rate.

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TW(True Wide)-IPS for Improvement of Display Performance in large size TV application

  • Kim, J.H.;Ko, T.W.;Lee, J.H.;Choi, H.C.;Oh, C.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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    • pp.664-667
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    • 2003
  • Super In Plane Switching (S-IPS) technology is applied for large TFT-LCD panels used in TV applications. It has a lot of advantages in comparison to the alternative, VA technology. S-IPS shows excellent viewing angle properties and fast response time between intermediate gray levels. If the performance parameters which describe the actual visual performance are considered, S-IPS is much more advantageous.$^{1)}$ However, it shows relatively low contrast ratio in diagonal direction compared to viewing angle characteristic in upper/down direction in S-IPS. In order to compensate the relatively low diagonal contrast ratio, a newly designed optical film was applied and the truly wide view angle of a S-IPS TW(True Wide)-IPS) was achieved. Our newly developed 30-inch TFT-LCD panel reveals TW-IPS that is optimized for TV application

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불순물 농도에 따른 산화막 성장률의 차이를 이용한 자기 정렬된 금속게이트 MOSFET 구조 (A Self-Aligned Metal Gate MOSFET Structure Utilizing The Oxidation Rate Variation on The Impurity Concentration)

  • 고요환;최진호;김충기
    • 대한전기학회논문지
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    • 제36권7호
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    • pp.462-469
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    • 1987
  • A metal gate MOSFET with source/drain regions self-aligned to gate region is proposed. The proposed MOS transistor is fabricated by utilizing the higher oxidation rate of source/drain regions with high doping concentration when compared with channel region with moderate doping. The thick oxide on the source/drain regions reduces the gate and drain(source) overlap capacitance down to that of a self-aligned polysilicon gate device while allowing the use of a metal gate with much lower resistivity than the more commonly used polycrystalline silicon. A ring oscillator composed of 15 inverter stages has been computer simulated using SPICE. The results of the simulation show good agreement with experimental measurement confirming the fast switching speed of propesed MOSFET.

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X선 고전압 장치의 정류형태에 따른 리플 비교 (Comparison of Ripple of High Voltage X-ray Generator by Rectification type)

  • 김영표;김태곤;천민우;이호식;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.128-128
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    • 2010
  • The high-voltage X-ray generator recently used is very popular, because that can be miniaturized, increased in generating efficiency, elaborated in output control. All these features are available with high-frequency made by using an inverter, the fast switching semiconductor device. In this paper to identify the differences among types of rectification, we compared output ripple with full-wave rectification and dual-voltage rectification methods.

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전지관리장치(BMS)의 서지내성 성능향상 기법 (Surge Immunity Performance Enhancement Techniques on Battery Management System)

  • 김용성;임성정;서우현;정중일
    • 전기학회논문지
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    • 제64권1호
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    • pp.196-200
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    • 2015
  • The switching noise in the power electronics of the power conversion equipment (Power Conditioning System) for large energy storage devices are generated. Since the burst-level transient noise from being generated in the power system at a higher power change process influences the control circuit of the low voltage driver circuit. Noise may cause the malfunction of the control device even if no dielectric breakdown leads to a control circuit. To overcome this, this paper proposes the installation of an additional nano-surge protection device on the power supply DC output circuit of the battery management unit.

원격조작기의 양방향 힘제어의 구현과 실험 (Implementation and experiment of bilateral force control for a telemanipulator)

  • 천자홍;정명진
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 1991년도 한국자동제어학술회의논문집(국내학술편); KOEX, Seoul; 22-24 Oct. 1991
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    • pp.838-843
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    • 1991
  • A telemanipulator that reflects grasping force of the slave gripper to the human operator was implemented in order for manipulation to be more delicate and safe. An industrial robot gripper was used as the slave manipulator. The master manipulator was constructed to make it easy for a human operator to direct the slave and to feel the reflected gripping force. Reflected force was generated by the servomotor of the master. The force signal and position signals of the master and the slave was used to generate driving force signal. Basically position-position type control was used. Miner force feedback is added to improve the performance of the system. Implemented system was tested by colliding two fingers of the slave manipulator, and here switching was used to archive more fast and easy manipulation.

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스위칭 연결 구조를 갖는 외발형 이동 로봇들에 대한 대형 제어 알고리듬 (Formation Control Algorithm for Coupled Unicycle-Type Mobile Robots Through Switching Interconnection Topology)

  • 김홍근;심형보;백주훈
    • 제어로봇시스템학회논문지
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    • 제18권5호
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    • pp.439-444
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    • 2012
  • In this study, we address the formation control problem of coupled unicycle-type mobile robots, each of which can interact with its neighboring robots by communicating their position outputs. Each communication link between two mobile robots is assumed to be established according to the given time-varying interconnection topology that switches within a finite set of connected fixed undirected networks and has a non-vanishing dwell time. Under this setup, we propose a distributed formation control algorithm by using the dynamics extension and feedback linearization methods, and by employing a consensus algorithm for linear multi-agent systems which provides arbitrary fast convergence rate to the agreement of the multi-agent system. Finally, the proposed result is demonstrated through a computer simulation.

Technology of MRAM (Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell

  • Park, Wanjun;Song, I-Hun;Park, Sangjin;Kim, Teawan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권3호
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    • pp.197-204
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    • 2002
  • DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.