• 한국전산유체공학회:학술대회논문집
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• 2008.08a
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• pp.68.5-69
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• 2008

• Biomolecules & Therapeutics
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• v.2 no.4
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• pp.310-315
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• 1994

The pharmacokinetics and tissue distribution of DA-3030 (recombinant human granulocyte colony-stimulating factor, rhG-CSF, recently manufactured by Dong-A research laboratory of Dong-A Pharmaceutical Company) were compared with reported data in the literature. After intravenous(i.v.) administration of DA-3030, at dose of 5, 10 and 100 $\mu\textrm{g}$/kg to rats, some pharmacokinetic parameters, such as terminal half-lives(1.05, 1.19 and 1.83 hr, respectively) and clearance (84.0, 54.8 and 45.5 mι/hr/kg, repectively), were dose-dependent. This could be due to the saturable metabolism of DA-3030 in rats. Similar results were also reported. After subcutaneous(s.c.) and intramuscular(i.m.) administrations of DA-3030, 10 $\mu\textrm{g}$/kg to rats, the extent of bioavailability(absolute bioavailability) were incomplete; the values were 23.3 and 18.2% after s.c. and i.m. injections, respectively, due to the degradation of DA-3030 by protease. After 7-consecutive day i.v. administrations of DA-3030, 10 $\mu\textrm{g}$/kg/day, to rats, the plasma concentrations and pharmacokinetic parameters of DA-3030 were not significantly different from those in single administration. In mice and dogs at DA-3030 dose of 10 $\mu\textrm{g}$/kg, the plasma concentrations of DA-3030 were also declined rapidly with terminal half-lives of 1.31 and 1.15 hr, respectively. DA-3030 was highly concentrated in the kidney after i.v. administration of DA-3030, 10 $\mu\textrm{g}$/kg, to rats, and the results were similar to those obtained using radiolabelled rhG-CSF in the literature. Above data indicate that DA-3030 has similar properties to rhG-CSF manufactured by other companies in view of pharmacokinetics.

• Korean Journal of Crystallography
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• v.17 no.1
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• pp.24-32
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• 2006

The microwave dielectric properties of $Zn_3Nb_2O_8\;with\;V_2O_5$ addition were investigated. The addition of $V_2O_5$ enhanced the sinterability of $Zn_3Nb_2O_8$, which resulted in high density of $Zn_3Nb_2O_8$ ceramic greater than 95% of the theoretical value when sintered at $900^{\circ}C$ for 4 hours. X-ray diffraction analysis of sintered $Zn_3Nb_2O_8$ ceramic showed no second phase with $V_2O_5$ addition. Dielectric permittivity(${\varepsilon}_r$) and quality factor($Q{\times}f$) varied with both density at different sintering temperature and $V_2O_5$ addition. Dielectric permittivity, quality factor and temperature coefficient($T_{cf}$) of the two mole of $V_2O_5\;added\;Zn_3Nb_2O_8$ that was sintered at $900^{\circ}C$ were 21.4, 40,000, $-54ppm/^{\circ}C$, respectively.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.70-77
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• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

• The Korean Journal of Physiology and Pharmacology
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• v.4 no.5
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• pp.385-391
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• 2000

Using the patch-clamp technique, we investigated the alteration of 4-aminopyridine(4-AP)-sensitive, voltage-dependent $K^+$ channel (Kv) in the mesenteric arterial smooth muscle cell (MASMC) of renovascular hypertensive model, one-kidney one-clip Goldblatt hypertensive rat (GBH). To isolate $K_V$ current, internal pipette solution contained 5 mM ATP and 10 mM EGTA. Under these condition, MASMC was depolarized by 4-AP, but charybdotoxin did not affect membrane potential. Membrane potential of hypertensive cell $(-40.3{\pm}3.2\;mV)$ was reduced when compared to that of normotensive cell $(-59.5{\pm}2.8\;mV).$ Outward $K^+$ current of hypertensive cell was significantly reduced when compared to normotensive cell. At 60 mV, the outward currents were $19.10{\pm}1.91$ and $14.06{\pm}1.05$ pA/pF in normotensive cell and hypertensive cell respectively. 4-AP-sensitive $K^+$ current was also smaller in hypertensive cell $(4.28{\pm}0.38\;pA/pF)$ than in normotensive cell $(7.65{\pm}0.52\;pA/pF).$ The values of half activation voltage $(V_{1/2})$ and slope factor (k1) as well as the values of half inactivation voltage $(V_{1/2})$ and slope factor (k1) were virtually similar between GBH and NTR. These results suggest that the decrease of 4-AP-sensitive $K^+$ current contributes to a depolarization of membrane potential, which leads to development of vascular tone in GBH.

• Journal of Powder Materials
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• v.17 no.4
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• pp.289-294
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• 2010

For the aim of low-temperature co-fired ceramic microwave components, sintering behavior and microwave properties (dielectric constant ${\varepsilon}_r$, quality factor Q, and temperature coefficient of resonant frequency ${\tau}_f$) are investigated in $Bi_{18}O(Ca_{0.725}Zn_{0.275})_8Nb_{12}O_{65}$ [BCZN] ceramics with addition of $V_2O_5$. The specimens are prepared by conventional ceramic processing technique. As the main result, it is demonstrated that the additives ($V_2O_5$) show the effect of lowering of sintering temperature and improvement of microwave properties at the optimum additive content. The addition of 0.25 wt% $V_2O_5$ lowers the sintering temperature to $890^{\circ}C$ utilizing liquidphase sintering and show the microwave dielectric properties (dielectric constant ${\varepsilon}_r$ = 75, quality factor $Q{\times}f$ = 572 GHz, temperature coefficient of resonance frequency ${\tau}_f\;=\;-10\;ppm/^{\circ}C$). The estimated microwave dielectric properties with $V_2O_5$ addition (increase of ${\varepsilon}_r$, decrease of $Q{\times}f$, shift of ${\tau}_f$ to negative values) can be explained by the observed microstrucure (sintered density, abnormal grain structure) and possibly high-permittivity $Bi_{18}Zn_8Nb_{12}O_{65}$ (BZN) phase determined by X-ray diffraction.

• Journal of Korean Society for Quality Management
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• v.45 no.4
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• pp.889-902
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• 2017

Purpose: The orthogonality and trace optimal properties are desirable for constructing designs of experiments. This article focuses on the determination of the sizes of experiments for the balanced trace optimal resolution-V fractional factorial designs for 2-level factorial designs, which have near-orthogonal properties. Methods: In this paper, first we introduce the trace optimal $2^t$ fractional factorial designs for $4{\leq}t{\leq}7$, by exploiting the partially balanced array for various cases of experimental sizes. Moreover some orthogonality criteria are also suggested with which the degree of the orthogonality of the designs can be evaluated. And we appraise the orthogonal properties of the introduced designs from various aspects. Results: We evaluate the orthogonal properties for the various experimental sizes of the balanced trace optimal resolution-V fractional factorial designs of the 2-level factorials in which each factor has two levels. And the near-orthogonal 2-level balanced trace optimal resolution-V fractional factorial designs are suggested, which have adequate sizes of experiments. Conclusion: We can construct the trace optimal $2^t$ fractional factorial designs for $4{\leq}t{\leq}7$ by exploiting the results suggested in this paper, which have near-orthogonal property and appropriate experimental sizes. The suggested designs can be employed usefully especially when we intend to analyze both the main effects and two factor interactions of the 2-level factorial experiments.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.197-201
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• 2014

TEPC (Tissue Equivalent Proportional Counter) was usually used for high LET radiation dosimetry. We developed a prototype TEPC for micro-dosimetry in the range of $0.2{\sim}300 keV/{\mu}m$. And, the simulated site diameter of the TEPC is $2{\mu}m$, of similar size to a cell nucleus. For purposes of characterization the response for high LET radiation of the TEPC has been investigated under 135MeV/u Carbon ions in HIMAC (Heavy Ion Medical Accelerator). We determined the gas multiplication factor and measured the lineal energy spectrum [yd(y)] of 135 MeV/u Carbon ions. The value of the gas multiplication factor was 315 at 700 V bias voltage. As a result of the experiment, we could more understand the performance of the TEPC for high LET (Linear Energy Transfer) radiation. And the procedure of high LET radiation dosimetry using TEPC is established.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.123-129
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• 2003

Thin transparent Cu films in the thickness range of 10 ~ 40 nm are deposited by rf-magnetron sputtering on porous silicon (PS) anodized on p-type silicon in dark. Microstructural features of the Cu films are investigated using SEM, AFM and XRD techniques. The RMS roughness of the Cu films is found to be around 1.47 nm and the grain growth is columnar with a (111) preferred orientation and follows the Volmer-Weber mode. The photoluminescence studies showed that a broad luminiscence peak of PS near the blue-green region gets blue shifted (~0.05 eV) with a small reduction in intensity and therefore, Cu-related PL quenching is absent. The FTIR absorption spectra on the PS/Cu structure revealed no major change of the native PS peaks but only a reduction in the relative intensity. The I-V characteristic curves further establish the Schottky nature of the diode with an ideality factor of 2.77 and a barrier height of 0.678 eV. An electroluminiscence (EL) signal of small intensity could be detected for the above diode.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.33-38
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• 2012

An in-plane thermoelectric sensor was processed on a glass substrate by evaporation of the n-type Bi-Te and p-type Sb-Te thin films, and its sensing characteristics were evaluated. The n-type Bi-Te thins film used to fabricate the inplane sensor exhibited a Seebeck coefficient of -165 ${\mu}V$/K and a power factor of $80{\times}10^{-4}W/K^2-m$. The p-type Sb-Te thin film used to fabricate the in-plane sensor exhibited a Seebeck coefficient of 142 ${\mu}V$/K and a power factor of $51.7{\times}10^{-4}W/K^2-m$. The in-plane thermoelectric sensor consisting of 15 pairs of the n-type Bi-Te and the p-type Sb-Te evaporated thin films exhibited a sensitivity of 2.8 mV/K.