• Title/Summary/Keyword: Factor V

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Fabrication and Characteristics of Schottky Diodes using the SDB(Silicon Direct Bonded) Wafer (SDB 웨이퍼를 사용한 쇼트키아이오드의 제작 및 특성)

  • 강병로;윤석남;최영호;최연익
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.1
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    • pp.71-76
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    • 1994
  • Schottky diodes have been fabricated using the SDB wafer, and their characteristics have been investigated. For comparison, conventional planar and etched most structure were made on the same substrate. The ideality factor and barrier height of the fabricated devices are found to be 1.03 and 0.77eV, respectively. Breakdown volttge of the etched mesa Schottky diode has been increased to 180V. whereas it is 90V for the planar diode. Schottky diode with an etched mesa exhibits twice improvement in breaktown voltage.

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The numerical analysis of gas blast arcs for 800kV GCB (800kV 가스차단기의 아크특성 해석)

  • Chulkov, V.V.;Shin, Y.J.;Park, K.Y.;Song, K.D.;Choi, Y.K.
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1287-1289
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    • 1995
  • For the analysis of hot gas flow due to arc in puffer type $SF_6$ gas circuit breakers(GCBs), a program has been developed by adding function for arcing to the Fluid-in Cells(FLIC) method, which is often used for a two dimensional compressible flow problems, utilizing a simplified enthalpy flow arc model available for arcing. In this paper, the results of arc modelling for 800kV GCB are presented and compared with that of cold gas flow in the interrupters. It is shown that the nozzle clogging is the dominating factor in the pressure rise of the puffer chamber. It permits to estimate the dielectric strength of interrupters.

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Design of Voltage Controlled Oscillator with High Reliability and Low Phase Noise (고신뢰성과 저위상잡음을 갖는 전압제어 발진기의 설계 및 제작)

  • Ryu Keun-Kwan
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.3 no.1 s.4
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    • pp.13-19
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    • 2004
  • The VCO(Voltage Controlled Oscillator) with low phase noise and high reliability is implemented using nonlinear design, and its phase noise characteristics are compared with that of Lesson's equation. The microstripline coupled with dielectric resonator is realized as a high impedance inverter to improve the phase noise, and the qualify factor of resonator circuit can be transferred to active device with the enhanced the loaded quality factor. The worst case and part stress analyses are achieved to obtain the high reliability of VCO. The developed VCO has the oscillating tuning factor of 0.56MHz/V for the control voltage range of 0$\~$12V This VCO requires the DC power of 160mW. The phase noise characteristics exhibit good performances of -96.51dBc/Hz @ 10KHz and -116.3dBc/Hz @ 100KHz, respectively. And, the output power of 7.33 dBm is measured.

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Characterization of Heterogeneous Interaction Behaviour in Ternary Mixtures by Dielectric Analysis: The H-Bonded Binary Polar Mixture in Non-Polar Solvent

  • Sengwa, R.J.;Madhvi;Sankhla, Sonu;Sharma, Shobha
    • Bulletin of the Korean Chemical Society
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    • v.27 no.5
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    • pp.718-724
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    • 2006
  • The heterogeneous association behaviour of various concentration binary mixtures of mono alkyl ethers of ethylene glycol with ethyl alcohol were investigated by dielectric measurement in benzene solutions over the entire concentration range at 25 ${^{\circ}C}$. The values of static dielectric constant $\epsilon_0$ of the mixtures were measured at 1 MHz using a four terminal dielectric liquid test fixture and precision LCR meter. The high frequency limiting dielectric constant $\epsilon_\infty$ values were determined by measurement of refractive index $n_D$ ($\epsilon_\infty\;=\;n_D\;^2$). The measured values of $\epsilon_0$ and $\epsilon_\infty$ were used to evaluate the values of excess dielectric constant $\epsilon^E$, effective Kirkwood correlation factor $g^{eff}$ and corrective correlation factor $g_f$ of the binary polar mixtures to obtain qualitative and quantitative information about the H-bond complex formation. The non-linear behaviour of the observed $\epsilon_0$ values of the polar molecules and their mixtures in benzene solvent confirms the variation in the associated structures with change in polar mixture constituents concentration and also by dilution in non-polar solvents. Appearance of the maximum in $\epsilon^E$ values at different concentration of the polar mixtures suggest the formation of stable adduct complex, which depends on the molecular size of the mono alkyl ethers of ethylene glycol. Further, the observed $\epsilon^E$ < 0 also confirms the heterogeneous H-bond complex formation reduces the effective number of dipoles in these polar binary mixtures. In benzene solutions these polar molecules shows the maximum reduce in effective number of dipoles at 50 percent dilutions. But ethyl alcohol rich binary polar mixtures in benzene solvent show the maximum reduce in effective number of dipoles in benzene rich solutions.

Efface of Annealing in a Reduction Ambient on Thermoelectric Properties of the $(Bi,Sb)_{2}Te_{3}$ Thin Films Processed by Vacuum Evaporation (환원분위기 열처리가 $(Bi,Sb)_{2}Te_{3}$ 증착박막의 열전특성에 미치는 영향)

  • Kim, Min-Young;Oh, Tae-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.3
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    • pp.1-8
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    • 2008
  • Effects of annealing process in a reduction ambient on thermoelectric properties of the $(Bi,Sb)_{2}Te_3$ thin films prepared by thermal evaporation have been investigated. With annealing at $300^{\circ}C$ for 2 hrs in a reduction ambient(50% $H_2$+50% Ar), the crystallinity of the $(Bi,Sb)_{2}Te_3$ thin films were substantially improved with remarkable increase in the grain size. Seebeck coefficients of the $(Bi,Sb)_{2}Te_3$ thin films increased from$\sim90{\mu}V/K$ to $\sim180{\mu}V/K$ with annealing in the reduction ambient due to decrease in the hole concentration. Power factors of the $(Bi,Sb)_{2}Te_3$ thin films were remarkably improved for $5\sim16$ times with annealing in the reduction atmosphere. After annealing in the reduction ambient, a $(Bi,Sb)_{2}Te_3$ evaporated film exhibited a maximum power factor of $18.6\times10^{-4}W/K^{2}-m$.

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A Low Phase Noise Design of Voltage Controlled Dielectric Resonator Oscillator and Reliability Analysis (전압제어 유전체 공진 발진기의 저위상잡음 설계 및 신뢰도 분석)

  • Ryu Keun-Kwan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.9 no.2
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    • pp.408-414
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    • 2005
  • The VCDRO(Voltage Controlled Dielectric Resonate. Oscillator) with low phase noise is designed using nonlinear analysis, and its phase noise characteristics are compared with that of Lesson's equation. The microstripline coupled with dielectric resonator is realized as a high impedance inverter to improve the phase noise performance, and the quality factor of resonator circuit can be transferred to active device with the enhanced the loaded quality factor. The worst case and part stress analyses are achieved to obtain the high reliability of VCDRO and the reliability analysis is accomplished to estimate the probability of operation at the end of life. The developed VCDRO has the oscillating tuning factor of 0.56MHZ1V for the control voltage range of 0-l2V. This VCDRO requires the DC power of 136mW. The phase noise characteristics exhibit good performances of -94.18dBc/Hz (a)10KHz and -116.3dBc/Hz (a)100KHz. And, the output power over 7.33dBm is measured.

Novel Single-Stage Power Factor Correction AC/DC Converter with Low DC Link Voltage using New Magnetic Feedback Technique (새로운 마그네틱 피드백 기법을 이용하여 낮은 링크 전압을 갖는 새로운 단일 전력단 역률 개선 AC/DC 컨버터)

  • Choi E. S.;Yoon H. K.;Kim C. E.;Moon G. W.;Youn M. J.
    • Proceedings of the KIPE Conference
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    • 2004.07b
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    • pp.528-532
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    • 2004
  • Novel single-stage power factor correction AC/DC converter with low DC link voltage using new magnetic feedback technique is proposed in this paper. The Proposed converter has high power factor, tight output voltage regulation and low link capacitor voltage less than 450V for all the load range through the universal input line. This converter has also no dead-zone in the input current, which is seen in the conventional converter using the previous magnetic feedback technique. In this paper, the analysis of operations and features of the proposed converter is provided, and the experimental results of 90W-prototype shows the low harmonic distortions satisfied with EN 61000-3-2 Class D, high power factor and low link voltage less than 450V.

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Forward Current Transport Mechanism of Cu Schottky Barrier Formed on n-type Ge Wafer

  • Kim, Se Hyun;Jung, Chan Yeong;Kim, Hogyoung;Cho, Yunae;Kim, Dong-Wook
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.3
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    • pp.151-155
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    • 2015
  • We fabricated the Cu Schottky contact on an n-type Ge wafer and investigated the forward bias current-voltage (I-V) characteristics in the temperature range of 100~300 K. The zero bias barrier height and ideality factor were determined based on the thermionic emission (TE) model. The barrier height increased and the ideality factor decreased with increasing temperature. Such temperature dependence of the barrier height and the ideality factor was associated with spatially inhomogeneous Schottky barriers. A notable deviation from the theoretical Richardson constant (140.0 Acm-2K-2 for n-Ge) on the conventional Richardson plot was alleviated by using the modified Richardson plot, which yielded the Richardson constant of 392.5 Acm-2K-2. Finally, we applied the theory of space-charge-limitedcurrent (SCLC) transport to the high forward bias region to find the density of localized defect states (Nt), which was determined to be 1.46 × 1012 eV-1cm-3.

Implementation and Performance Evaluation of Digital Flickermeter Algorithm According to IEC61000-4-15 Edition 2 for Korean Distribution Power System (국내 계통 특성을 고려한 IEC61000-4-15 Edition 2 기반의 디지털 플리커 미터 알고리즘 구현 및 평가)

  • Shin, Hoon-Chul;Han, Su-Kyoung;Park, Sang-Ho;Kim, Kern-Joong;Cho, Soo-Hwan
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.7
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    • pp.1017-1024
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    • 2017
  • The International Electrotechnical Commission(IEC) 61000-4-15 is a standard proposing techniques for a flicker meter test and measurement method. The IEC61000-4-15 ed1 announced in 1997 was not include tests for accurate verification. Also it was not explained flicker meter algorithm that can be directly applied to the other power systems. But the new edition of IEC61000-4-15 ed2 prescribes a variety of tests for verify flicker meter algorithm and it explains 'correction factor' used for measuring flicker in other power systems. It can measure flicker severity in 220V system by multiplying correction factor to the measured values with the 230V algorithm. This paper compared the method of measuring flicker severity in korea power system using the correction factor and the modified weighting filter, after verifying of digital flicker meter algorithm created by using matlab based on IEC61000-4-15 ed2.

Determination of buildup factors for some human tissues using both MCNP5 and Phy-X / PSD

  • Mohammad M. Alda'ajeh;J.M. Sharaf;H.H. Saleh;Mefleh S. Hamideen
    • Nuclear Engineering and Technology
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    • v.55 no.12
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    • pp.4426-4430
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    • 2023
  • In this article, Exposure Buildup Factor(EBF) and the Energy Absorption Buildup Factor(EABF) have been determined for blood, brain, and muscle using the Monte Carlo method which is represented by MCNP5 codes and compared with geometric progression(G-P) fitting method which is represented by Phy-X/PSD online platform. The novelty of the present work is used an energy source of less than 0.1 MeV to determine buildup factors using MCNP5 and using Phy-X/PSD for some human tissues. thus, the energy range used in this case study was 0.06-3 MeV for penetration depths covered 0.5-3 MFP. Results of MCNP5 and Phy-X/PSD are validated against reference values of water that were reported at ANS-6.4.3. present results of EABFs and EBFs for the previously mentioned human tissues appeared good agreement between MCNP5 in comparison with Phy-X/PSD, whereas, the maximum average relative deviation did not exceed 2.37%. results of our article can be used in different medical applications, such as brachytherapy, radiotherapy, and diagnostics.