• Title/Summary/Keyword: Facing targets magnetron sputtering (FTMS)

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The Effect of Substrate Temperature on Tribological and Electrical Properties of Sputtered Carbon Nitride Thin Film (스퍼터링 질화탄소 박막의 트라이볼로지 및 전기적 특성의 기판 온도 영향)

  • Park, Chan Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.1
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    • pp.33-38
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    • 2021
  • Using facing target magnetron sputtering (FTMS) with a graphite target source, carbon nitride thin films were deposited on silicon and glass substrates at different substrate temperatures to confirm the tribological, electrical, and structural properties of thin films. The substrate temperatures were room temperature, 150℃, and 300℃. The tribology and electrical properties of the carbon nitride thin films were measured as the substrate temperature increased, and a study on the relation between these results and structural properties was conducted. The results show that the increase in the substrate temperature during the fabrication of the carbon nitride thin films increased the hardness and elastic modulus values, the critical load value was increased, and the residual stress value was reduced. Moreover, the increase in the substrate temperature during thin-film deposition was attributed to the improvement in the electrical properties of carbon nitride thin film.

The Dependence of Target-Substrate Distance of Oxide Thin Films Fabricated by rf FTMS (rf FTMS법에 의해 제작된 산화물박막의 타겟-기판간거리 의존성)

  • Choi, C.S.;Lee, S.H.;Kim, D.S.;Lee, K.S.;Na, D.G.;Lee, D.C.
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1618-1620
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    • 1996
  • A variety of processing techniques have been reported for preparing high quality functional thin films, and one of the most successful techniques has been known to be the rf FTMS(facing targets magnetron sputtering) method. The rf FTMS has preferable advantages to reduce the resputtering effect when depositing thin films and efficiently to oxidize the grown films by oxygen radicals. The resulting optimum conditions were found to be the rf power 50 W and the substrate position of 20 mm.

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