• The Journal of Korean Academy of Prosthodontics
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• v.44 no.1
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• pp.20-28
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• 2006

Statement of problem: The titanium has advantages of a high biocompatibility, a corrosion resistence, low density, and cheep price, so it is focused as a substituted alloy But it is quite difficult to cast with the tranditional method due to the high melting point, reacivity with element at, elevated temperature. By using the CAD-CAM system for the crown construction, it is possible to reduce the errors while proceeding the wax-up, investing, and casting procedure Purpose: The purposes of this study were to measure the marginal adaptation of the casting titanium coping and machine-milled titanium coping according to the casting methods and the marginal configurations. Material and method: The marginal configurations were used chamfer shoulder, and beveled shoulder. The total 30 copings were used, and these are divided into 6 groups according to the manufacturing method and marginal configuration. The gap between margin of the model and the restoration was measured with 3-dimensional measuring microscope. Results: The following results were obtained; 1. casting gold coping demonstrated the best marginal seal, followed by casting titanium coping finally machine-milled titanium copings. 2. In casting titanium coping, chamfer demonstrated the best marginal seal, followed by shoulder and beveled shoulder. There was no significantly difference in shoulder and beveled shoulder. But all margin form has clinically acceptable 3. In machine-milled titanium copings, chamfer demonstrated the best marginal seal, followed by shoulder and beveled shoulder. Beveled shoulder show large and uneven marginal gap Conclusions: Above result revealed that marginal adaptation of the titanim coping is avail able in the clinical range, it can be used as an alternative metal and it is prefered especially in chamfer or shoulder margin during implant superstructure fabrication. But there should be more research on machine-milled titanium in order to use it in the clinics.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.362-362
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• 2010

Today, vast attention has been paid to periodic arrays of nanostructures due to their potential for applications such as memory with huge storage density. Such application requires large-scale fabrication of well ordered nano-sized structures. One of the most widely used methods for the ordered nanostructures is lithography. This top-down process, however, has the limit to reduce size. Here the promising alternative is the self-organization of ordered nano-sized structures such as large scale 2d carbon-induced reconstructions on W(110). In the present study, we report on the first well-resolved atomic resolution STM studies of the well-known R($15{\times}3$) and R($15{\times}12$) carbon induced reconstruction of the W(110). From the atomic image of R($15{\times}3$) for different values of tunneling gap resistance, we can tell there are no missing atoms in unit cells of R($15{\times}3$) and some atomic displacements are substantial from the clean W(110), even though not all the imaged position of atoms correspond to tungsten, but may include those of carbon. We are considering two cases; First case is related to lattice deformation, or top layer of W(110) is deformed in the process of relief of strain caused by random inserting of carbon atoms possibly in the interstitial position. In the second case, R($15{\times}3$) unit cell results from a coincidence lattice between clean W(110) substrate and tungsten carbide overlayer which has rectangular atomic arrangement and giving R($15{\times}3$) coincidence lattice. beta-W2C showing rectangular unit cell should be a candidate. Further, we report on new reconstructions. Unlike the well-known R($15{\times}12$) consisting of two parts, two inner structures between two "Backbone" structures. The new reconstruction, which we found for the first time, contains more parts between the "Backbone"s. Sometimes we can observe the reconstruction consists of only inner parts without "Backbone" parts. Thus, the observed reconstruction can be built by constructing of two types of "Lego"-like block. Moreover, the rectangle shape of "Backbone" transform to parallelogram-like shape over time, the so-called wavy-R($15{\times}12$). Adsorption of hydrogen can be the reason for this transformation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.22 no.1
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• pp.42-51
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• 2012

Objectives: To compare the exposure level of extremely low frequency (ELF) magnetic fields among semiconductor workers, shipyard welders and office workers. Methods: To measure the ELF magnetic field concentration, EMDEX LITE (Enertech, USA) were used and monitored for eight hours continuously. Five companies handling the electric and magnetic field (EMF) source were investigated, which the exposure groups were classified into three groups: semiconductor workers, welders, and office workers. Welder group was chosen as a high exposed group and office group as a low exposed group. Results: The arithmetic mean (${\pm}SD$) and geometric mean (GSD) of personal exposure level of semiconductor workers were 0.73 (${\pm}1.33$) ${\mu}T$, 0.43 (2.88) ${\mu}T$, respectively. The ceiling value ranged between 0.18 and 123.2 ${\mu}T$. Welders were exposed high with the arithmetic mean value of 3.46 (${\pm}\;13.46$) ${\mu}T$ and geometric mean value of 0.45 (4.70) ${\mu}T$, respectively, and ceiling value range of 75.5~129.6 ${\mu}T$. The exposure levels of office workers were low compared to other exposed groups; the arithmetic mean 0.05 (${\pm}0.13$) ${\mu}T$, geometric mean 0.03 (2.38) ${\mu}T$ and ceiling value range 0.37~3.35 ${\mu}T$. This study revealed statistically significant differences of the mean ELF magnetic field exposure doses among three groups (p < 0.01). Conclusions: The average ELF magnetic field exposure doses of semiconductor workers were much higher than those of office workers in control group, but were lower than those of welders in high exposure group.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.169-169
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• 2010

As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

• Korean Journal of Optics and Photonics
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• v.14 no.6
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• pp.669-673
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• 2003

We fabricated a buried-ridge waveguide laser diode (B-RWG LD) which has more advantages for obtaining lateral single mode operation on the same ridge width and for the planarization of the device surface, compared to the conventional RWG LD. In this LD, the difference of the lateral effective refractive index can be controlled by the thickness of the InGaAsP layer which is grown on the active and the p-InP layers. The InGaAsP multiple quantum well was grown on a n-InP substrate by the CBE. The buried ridge structure was formed by selective wet etchings, followed by liquid phase epitaxy methods. The fabricated LD with the ridge width of 7 ${\mu}{\textrm}{m}$ showed a linear increase of the optical power up to 20 ㎽ without any kinks and a saturated output power of more than 80 ㎽. By measuring the far field pattern, we demonstrate that LDs with the ridge widths of 5 ${\mu}{\textrm}{m}$ and 7 ${\mu}{\textrm}{m}$ were operated in a lateral single mode up to 2.7I$_{th}$ and 2.4I$_{th}$, respectively.ely.

• Design & Manufacturing
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• v.15 no.2
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• pp.11-16
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• 2021

Recently, three-dimensional (3D) cell culture systems, which are superior to conventional two-dimensional (2D) vascular systems that mimic the in vivo environment, are being actively studied to reproduce drug responses and cell differentiation in organisms. Conventional two-dimensional cell culture methods (scaffold-based and non-scaffold-based) have a limited cell growth rate because the culture cannot supply the culture medium as consistently as microvessels. To solve this problem, we would like to propose a 3D culture system with an environment similar to living cells by continuously supplying the culture medium to the bottom of the 3D cell support. The 3D culture system is a structure in which microvascular structures are combined under a scaffold (agar, collagen, etc.) where cells can settle and grow. First, we have manufactured molds for the formation of four types of microvessel-mimicking chips: width / height ①100 ㎛ / 100 ㎛, ②100 ㎛ / 50 ㎛, ③ 150 ㎛ / 100 ㎛, and ④ 200 ㎛ / 100 ㎛. By injection molding, four types of microfluidic chips were made with GPPS (general purpose polystyrene), and a 100㎛-thick PDMS (polydimethylsiloxane) film was attached to the top of each microfluidic chip. As a result of observing the flow of the culture medium in the microchannel, it was confirmed that when the aspect ratio (height/width) of the microchannel is 1.5 or more, the fluid flows from the inlet to the outlet without a backflow phenomenon. In addition, the culture efficiency experiments of colorectal cancer cells (SW490) were performed in a 3D culture system in which PDMS films with different pore diameters (1/25/45 ㎛) were combined on a microfluidic chip. As a result, it was found that the cell growth rate increased up to 1.3 times and the cell death rate decreased by 71% as a result of the 3D culture system having a hole membrane with a diameter of 10 ㎛ or more compared to the conventional commercial. Based on the results of this study, it is possible to expand and build various 3D cell culture systems that can maximize cell culture efficiency by cell type by adjusting the shape of the microchannel, the size of the film hole, and the flow rate of the inlet.

• Composites Research
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• v.35 no.3
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• pp.139-146
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• 2022

In this study, we study fabrication methods suitable for CNT fibers-based composite. We try to fabricate a composite material using a small amount of CNT fiber preparation of woven fabrics or stitched unidirectional fabrics consisting of CNT fiber is not achievable currently. The composite materials on the basis of CNT fibers have been mainly manufactured filament winding method due to productivity issues and difficulties in composite processes. We develop a new method to prepare CNT fibers-based composite using resin infiltrated CNT fibers-based films. Because CNT fibers have numerous nanopores inside, unnecessary resin can remain after curing and decrease the mechanical properties of the composites. To remove the excess resin, pressure should be applied during the process, but the pressure applied through VaRTM was not enough to remove the excess resin. To obtain the composite with high ratio of CNT fibers, higher pressure using hot press machine and foams next to the resin-infiltrated CNT fibers are necessary. We can obtain the composite having a mass ratio of 58.5 wt% based on the new suggested method and diluted epoxy. The specific strength of the composite reach 0.525 N/tex. This study presents a new process method that can be applied to the manufacturing of CNT fiber composite materials in the future.

• Clean Technology
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• v.28 no.4
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• pp.293-300
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• 2022

The remarkable mechanical, electrical, and thermal properties of graphene have recently sparked tremendous interest in various research fields. One of the most promising methods to produce large quantities of graphene dispersion is liquid-phase exfoliation (LPE) which utilizes ultrasonic waves or shear stresses to exfoliate bulk graphite into graphene flakes that are a few layers thick. Graphene dispersion produced via LPE can be transformed into graphene ink to further boost graphene's applications, but producing high-quality graphene more economically remains a challenge. To overcome this shortcoming, an advanced LPE process should be developed that uses relatively cheap natural graphite as a graphene source. In this study, a flow-LPE process was used to exfoliate natural graphite to produce graphene that was three times cheaper and seven times larger than synthetic graphite. The optimal exfoliation conditions in the flow-LPE process were determined in order to produce high-quality graphene flakes. In addition, the structural and electrical properties of the flakes were characterized. The electrical properties of the exfoliated graphene were investigated by carrying out an ink formulation process to prepare graphene ink suitable for inkjet printing, and fabricating a printed graphene pattern. By utilizing natural graphite, this study offers a potential protocol for graphene production, ink formulation, and printed graphene devices in a more industrial-comparable manner.