• Korean Journal of Materials Research
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• v.20 no.11
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• pp.586-591
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• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

• Journal of Korean Ophthalmic Optics Society
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• v.16 no.2
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• pp.107-115
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• 2011

Purpose: To design and fabricate the distributed auto edging machine for the development. Methods: We got the necessary data needed in design by using CAD. Based on the these data, we fabricated the trial product for the development of the distributed auto edging machine. Results: The patternless mode could be operated by receiving the eyesize data from the auto lay-outer with the RS232C transmission system and the pattern mode could be operated by setting the pattern on the left side of the machine. The distributed auto edging machine were composed with combinations of many elements; head, auto arm, pattern clamp and grinding wheels. The head part controlled the grinding of ophthalmic lens by operating the vertical and horizontal motors. The wheels part was comprised of glass mode, plastic mode, V-bevel mode and polish mode. The slide in the auto arm was equipped on the below of the patten and the slide could hold up the pattern which was rotated by fixed shaft. The pattern clamp could move the head part to the up and down or right or left way by the manual operation of optometrists. Conclusions: We could succeed in making the trial product by applying it to the development of the distributed auto edging machine which could be used as the patternless mode and pattern mode, selectively. Therefore, it was confidently expected that this product was very helpful for the optometrists to dispense the ophthalmic lens because of its cost-efficiency and convenience.

• Journal of Korean Society of Environmental Engineers
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• v.37 no.11
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• pp.649-655
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• 2015

As a novel water treatment membrane, concept of ceramic-based graphene membrane (CbGM) was suggested, and its mass transport behavior was investigated. The selectivity of CbGM was given by graphene material which is consisting of active layer, only transmitting water, but rejecting salts. Filtration-assisted assembly methods was employed as a facile method to fabricate CbGM. Surface morphology and characteristics of CbGM were analyzed by scanning electron microscopy (SEM) and contact angle. In addition, three different kinds of solutes (i.e., NaCl, $MgCl_2$, $Na_2SO_4$) were tested in batch forward osmosis system to confirm the mass transport behavior. Through surface morphology analysis and mass transport behavior, it was revealed that interlocking between graphene layers is very important, rather than thickness of laminated graphene layers, in terms of selectivity to CbGM. All the anions in each solute showed faster transport than those of cations. In addition, solutes which have high ion valence charge ratio of anion to cation ($Z^-/Z^+$) was easier to be passed through CbGM. It indirectly implied that the surface charge of CbGM appear to be positive. In addition, It showed that surface charge of CbGM has a great role on mass transport, in particular, transport of matter having charges, generally ions.

• Journal of Advanced Navigation Technology
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• v.12 no.2
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• pp.100-108
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• 2008

In this paper, the dual-ground, high-gain and broad-band internal antenna has been designed and fabricated for 4th-generation mobile communication applications. The optimized antenna was fabricated using photolithography method. The antenna consist of the patches, antenna and system ground, and a probe. The patch and ground plane were separated by air. In order to prevent the demage due to radiator swaying, the foams(${\varepsilon}_r{\fallingdotseq}1.03$) were used to fix the patches and ground. The conductor for the radiators was 0.05 [mm] thick. The measured input return loss showed less than -10 [dB] at the broadband from 3499 to 4743 [MHz]. It's measured bandwidth was 1244 [MHz]. The radiation patterns measured at 3400, 3600, 3800, 4000 and 4200 [MHz] showed Omni-directional characteristics. The gain in the E-plane and H-plane was 4.7 ~ 6.1 and 2.1 ~ 4.3 [dBi], respectively.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.380-386
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• 2006

In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.331-337
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• 2006

Cavity-type beam position monitors were developed in collaboration with KEK to use for the future accelerators such as international linear collider (ILC) or x-ray free electron laser (XFEL) in PAL. BPM components such as BPM cavity, beam tubes, waveguides and feedthroughs were assembled by brazing at the same time to reduce mechanical errors during the fabrication. There are four screwed pins around outer rim of the cavity for the tuning of cavity frequency and x-y isolation. The resonance frequency of BPM is 6.422 GHz, the inner diameter of cavity is 53.822 mm, and the range of mechanical adjusting is $+ / - 250{\mu}m$. The x-y isolation was measured better than -40 dB after tuned. Test results of signal forms, x-y isolations, sensitivities are satisfied within requirements for the KEK ATF2 beam line.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.99-101
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• 2000

The fabrication of the submicron size hole has been interesting due to the potential application of the near field optical sensor or liquid metal ion source. The 2 micron size dot array was photolithographically patterned. After formation of the V-groove shape by anisotropic KOH etching, dry oxidation at $1000^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have an etch-mask for dry etching. The reactive ion etching by the inductively coupled plasma (ICP) system was performed in order to etch ~90 nm $SiO_2$ layer at the bottom of the V-groove and to etch the Si at the bottom. The negative ion energy would enhance the anisotropic etching by the $Cl_2$ gas. After etching, the remaining thickness of the oxide on the Si(111) surface was measured to be ~130 nm by scanning electron microscopy. The etched Si aperture can be used for NSOM sensor.

• Korean Journal of Optics and Photonics
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• v.31 no.5
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• pp.213-217
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• 2020

In this study we report a wet-etching-based fabrication method for adiabatic optical-fiber tapers (OFTs), and describe their adiabaticity and HE₁₁ mode evolution at a wavelength of 1550 nm. The profile of the fabricated system satisfies the adiabaticity properties well, and the far-field pattern from the etched OFT shows that the fundamental HE₁₁ mode is maintained without a higher-order mode coupling throughout the tapers. In addition, the measured far-field pattern agrees well with the simulated result. The proposed adiabatic OFTs can be applied to a number of photonic applications, especially fiber-chip packages. Based on the fabricated adiabatic OFT structures, the optical transmission to the inversely tapered silicon waveguide shows large spatial-dimensional tolerances for 1 dB excess loss of ~60 ㎛ (silicon waveguide angle of 1°) and insertion loss of less than 0.4 dB (silicon waveguide angle of 4°), from the numerical simulation. The proposed adiabatic coupler shows the ultrabroadband coupling efficiency over the O- and C-bands.

• Nuclear Engineering and Technology
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• v.52 no.8
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• pp.1756-1763
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• 2020

The paper studies spark plasma sintering (SPS) of industrially used UO₂-based fuel containing integral fuel burnable absorber (IFBA) of neutrons Gd₂O₃. Densification dynamics of pristine UO₂ powder and the one added with 2 and 8 wt% of Gd₂O₃ under ultrasonication in liquid has been studied under SPS conditions at 1050, 1250, and 1450 ℃. Effect of sintering temperature on phase composition as well as on O/U stoichiometry has been investigated for UO₂ SPS ceramics. Sintering of uranium dioxide added with Gd₂O₃ yields solid solution (U,Gd)O₂, which is isostructural to UO₂. SEM with EDX and metallography were implemented to analyze the microstructure of the obtained UO₂ ceramics and composite UO₂-Gd₂O₃ one, particularly, open porosity, defects, and Gd₂O₃ distribution were studied. Microhardness, compressive strength and density were shown to reduce after addition of Gd₂O₃. Obtained results prove the hypothesis on formation of stable pores in the system of UO₂-Gd₂O₃ due to Kirkendall effect that reduces sintering efficiency. The paper expands fundamental knowledge on pros and cons of fuel fabrication with IFBA using SPS technology.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.1C
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• pp.102-110
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• 2004

In this paper, we propose a VLSI structure of real-time image compression and reconstruction processor using 2-D discrete wavelet transform and implement into a hardware which use minimal hardware resource using ASIC library. In the implemented hardware, Data path part consists of the DWT kernel for the wavelet transform and inverse transform, quantizer/dequantizer, the huffman encoder/huffman decoder, the adder/buffer for the inverse wavelet transform, and the interface modules for input/output. Control part consists of the programming register, the controller which decodes the instructions and generates the control signals, and the status register for indicating the internal state into the external of circuit. According to the programming condition, the designed circuit has the various selective output formats which are wavelet coefficient, quantization coefficient or index, and Huffman code in image compression mode, and Huffman decoding result, reconstructed quantization coefficient, and reconstructed wavelet coefficient in image reconstructed mode. The programming register has 16 stages and one instruction can be used for a horizontal(or vertical) filtering in a level. Since each register automatically operated in the right order, 4-level discrete wavelet transform can be executed by a programming. We synthesized the designed circuit with synthesis library of Hynix 0.35um CMOS fabrication using the synthesis tool, Synopsys and extracted the gate-level netlist. From the netlist, timing information was extracted using Vela tool. We executed the timing simulation with the extracted netlist and timing information using NC-Verilog tool. Also PNR and layout process was executed using Apollo tool. The Implemented hardware has about 50,000 gate sizes and stably operates in 80MHz clock frequency.