• Title/Summary/Keyword: Fabrication Process

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Study on Process Parameters of a SU-8 Resin in Two-photon Streolithography for the Fabrication of Robust Three-dimensional Microstructures (SU-8 레진을 이용한 이광자 흡수 광조형 공정에서 고강성 3 차원 마이크로 형상 제작을 위한 공정 변수 분석)

  • Son, Yong;Lim, Tae-Woo;Yi, Shin-Wook;Kong, Hong-Jin;Park, Sang-Hu;Yang, Dong-Yol
    • Journal of the Korean Society for Precision Engineering
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    • v.25 no.1
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    • pp.130-137
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    • 2008
  • Two-photon stereolithography (TPS) is recognized as a useful process for the fabrication of three-dimensional microstructures. Recently, the need for a two-photon curable resin with high strength increases as 3-D moicrostructures of high aspect ratio or large scale of several hundreds micrometers are required for applications of nano/micro devices in IT/BT. In this work, process parameters of TPS employing the SU-8 which is a representative two-photon curable resin with high strength have been studied for the precise fabrication of 3-D microstructures with high strength. The pre-baking and post-baking processes are studied and the parameter study of the SU-8 in TPS is conducted. Through this work, very small roughness of 12 nm and the minimum aspect ratio of ${\sim}1$ which provides a precise accumulation of layers could be obtained. Using the conditions studied in this work, some 3-D examples are fabricated.

A new fabrication process of vanadium oxides($VO_{x}$) thin films showing high TCR and low resistance for uncooled IR detectors

  • Han, Yong-Hee;Kang, Ho-Kwan;Moon, Sung-Uk;Oh, Myung-Hwan;Park, In-Hoon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.558-561
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    • 2001
  • Vanadium oxide ($VO_{x}$) thin films are very good candidate material for uncooked infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_{x}$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than 1000${\AA}$. This paper presents a new fabrication process of $VO_{x}$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}$(100${\AA}$)/V(80${\AA}$)/$VO_{x}$(500${\AA}$) by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than -2%/$^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

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Concrete Reinforcement Modeling with IFC for Automated Rebar Fabrication

  • LIU, Yuhan;AFZAL, Muhammad;CHENG, Jack C.P.;GAN, Vincent J.L.
    • International conference on construction engineering and project management
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    • 2020.12a
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    • pp.157-166
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    • 2020
  • Automated rebar fabrication, which requires effective information exchange between model designers and fabricators, has brought the integration and interoperability of data from different sources to the notice of both academics and industry practitioners. Industry Foundation Classes (IFC) was one of the most commonly used data formats to represent the semantic information of prefabricated components in buildings, whereas the data format utilized by rebar fabrication machine is BundesVereinigung der Bausoftware (BVBS), which is a numerical data structure exchanging reinforcement information through ASCII encoded files. Seamless transformation between IFC and BVBS empowers the automated rebar fabrication and improve the construction productivity. In order to improve data interoperability between IFC and BVBS, this study presents an IFC extension based on the attributes required by automated rebar fabrication machines with the help of Information Delivery Manual (IDM) and Model View Definition (MVD). IDM is applied to describe and display the information needed for the design, construction and operation of projects, whereas MVD is a subset of IFC schema used to describe the automated rebar fabrication workflow. Firstly, with a rich pool of vocabularies practitioners, OmniClass is used in information exchange between IFC and BVBS, providing a hierarchy classification structure for reinforcing elements. Then, using International Framework for Dictionaries (IFD), the usage of each attribute is defined in a more consistent manner to assist the data mapping process. Besides, in order to address missing information within automated fabrication process, a schematic data mapping diagram has been made to deliver IFC information from BIM models to BVBS format for better data interoperability among different software agents. A case study based on the data mapping will be presented to demonstrate the proposed IFC extension and how it could assist/facilitate the information management.

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Fabrication Process of Single Flux Quantum ALU by using Nb Trilayer (Nb Trilayer를 사용한 단자속양자 논리연산자의 제작공정)

  • Kang, J.H.;Hong, H.S.;Kim, J.Y.;Jung, K.R.;Lim, H.R.;Park, J.H.;Hahn, T.S.
    • Progress in Superconductivity
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    • v.8 no.2
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    • pp.181-185
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    • 2007
  • For more than two decades Nb trilayer ($Nb/Al_2O_3/Nb$) process has been serving as the most stable fabrication process of the Josephson junction integrated circuits. Fast development of semiconductor fabrication technology has been possible with the recent advancement of the fabrication equipments. In this work, we took an advantage of advanced fabrication equipments in developing a superconducting Arithmetic Logic Unit (ALU) by using Nb trilayers. The ALU is a core element of a computer processor that performs arithmetic and logic operations on the operands in computer instruction words. We used DC magnetron sputtering technique for metal depositions and RF sputtering technique for $SiO_2$ depositions. Various dry etching techniques were used to define the Josephson junction areas and film pattering processes. Our Nb films were stress free and showed the $T{_c}'s$ of about 9 K. To enhance the step coverage of Nb films we used reverse bias powered DC magnetron sputtering technique. The fabricated 1-bit, 2-bit, and 4-bit ALU circuits were tested at a few kilo-hertz clock frequency as well as a few tens giga-hertz clock frequency, respectively. Our 1-bit ALU operated correctly at up to 40 GHz clock frequency, and the 4-bit ALU operated at up to 5 GHz clock frequency.

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Design and Fabrication of Flexible OTFTs by using Nanocantact Printing Process (미세접촉프린팅 공정을 이용한 유연성 유기박막소자(OTFT)설계 및 제작)

  • Jo Jeong-Dai;Kim Kwang-Young;Lee Eung-Sug;Choi Byung-Oh;Esashi Masayoshi
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.506-508
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    • 2005
  • In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.

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Wire-tension Control System using Photo-interrupter Sensor and Micro-electrode Fabrication (광단속센서를 이용한 와이어장력 제어장치 및 마이크로전극 제조)

  • Kang, Myung Chang;Lee, Chang Hoon;Kim, Nam-Kyung
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.12 no.3
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    • pp.28-35
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    • 2013
  • Micro electrical discharge machining (EDM) as a non-contact machining process is very effective for micromachining with a thin electrode because of its low machining reaction force. The micro-electrode machining device has the advantage of maintaining high precision through the whole processes and uses a feeding wire in the thin electrode tool manufacturing process. This study describes the design and evaluation of a micro-electrode machining device using optical photo-interrupter. The electrode was fabricated by reverse electrical discharge machining. The performance of designed system was evaluated to measure tension force according to feed speed of wire. This system for micro electrode fabrication proves the feasibility in the micro-EDM process of the micro holes and parts for industrial applications.

Development and Sintering test of Industrial SFF system using SLS process (SLS 공정을 이용한 산업용 SFF 시스템의 개발 및 소결실험)

  • Jo, Hong-Seok;Cho, Hyun-Taek;Baek, Yung-Jong;Kim, Dong-Soo
    • Proceedings of the KSME Conference
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    • 2007.05a
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    • pp.1389-1393
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    • 2007
  • Selective Laser Sintering (SLS) is currently recognized as a leading process in the new field of solid freeform fabrication (SFF). It is used to fabricate in a short time any 3 dimensional shapes by layer-by-layer sintering of polymer, ceramic or metal powder. To develop this SFF system, it needs effective laser scanning path, temperature and z-axis control for lamination. Therefore, in this study, through the application of control algorithm for sintering process have performed, temperature evaluation for sintering process has performed and the manufacturing sample using SLS process.

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Capacity Planning and Control of Probe Process in Semiconductor Manufacturing (반도체 Probe 공정에서의 생산 능력 계획)

  • Jeong, Bong-Ju;Lee, Young-Hoon
    • IE interfaces
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    • v.10 no.1
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    • pp.15-22
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    • 1997
  • In semiconductor manufacturing, the probe process between fabrication and assembly process is constrained mostly by the equipment capacity because most products pass through the similar procedures. The probe process is usually performed in a batch mode with relatively short cycle times. The capability of the probe process can be determined by the optimal combination of the equipments and the products. A probe line usually has several types of equipment with different capacity. In this study, the probe line is modeled in terms of capacity to give the efficient planning and control procedure. For the practical usage, the hierarchical capacity planning procedure is used. First, a monthly capacity plan is made to meet the monthly production plan of each product. Secondly, the daily capacity planning is performed by considering the monthly capacity plan and the daily fabrication output. Simple heuristic algorithms for daily capacity planning are developed and some experimental results are shown.

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Forming of Compressor Piston Part of Metal Matrix Composites by Thixoforming Process (Thixoforming을 응용한 금속복합재료의 콤푸레서용 피스톤 제품의 성형)

  • 이동건;강충길
    • Transactions of Materials Processing
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    • v.10 no.3
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    • pp.223-234
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    • 2001
  • The characteristics of thixoforming process can decrease liquid segregation because of the improvement in fluidity in a globular microstructure state and utilizes flow without an air entrapment. Therefore, in order to obtain the sound parts of metal matrix composites by using thixoforming process which has co-existing solidus-liquidus phase, it is very important to design a die shape property and to obtain the fabrication conditions which affect the unifomity of the solid fraction on unfilling state and various defects throughout the fabricated parts. The die designs and fabrication conditions to obtain the good piston part are proposed for thixoforging process of metal matrix composites. When reheated metal matrix composites billets were transferred to the closed die gate, thixoforging were carried out under the various pressure(60, 80, 100MPa) with controled forging speed. The mechanical properties such as hardness and tensile strength for thixoforged parts have been investigated after T6 heat treatment.

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Fabrication Process and Characterization of High Thermal Conductivity-Low CTE SiCp/Al Metal Matrix Composites by Pressure Infiltration Casting Process (가압함침법에 의한 고열전도도-저열팽창계수 SiCp/Al 금속복합재료의 제조공정 및 특성평가)

  • 이효수;홍순형
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 1999.11a
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    • pp.83-87
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    • 1999
  • The fabrication process and thermal properties of 50~71vol% SiCp/Al metal matrix composites (MMCs) were investigated. The 50~71vol% SiCp/Al MMCs fabricated by pressure infiltration casting process showed that thermal conductivities were 118~170W/mK and coefficient of thermal expansion (CTE) were 9.5~$6.5{\times}10^{-6}/K$. Specially, the thermal conductivity and CTE of 71vol%SiCp/Al MMCs were 115~156W/mK and 6~$7{\times}10^{-6}/K$. respectively, which showed a improved themal properties than the conventional electronic packaging materials such as ceramics and metals.

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