• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.319-319
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• 2010

Dye-sensitized solar cells (DSSCs) based on plastic substrates have attracted much attention mainly due to extensive applications such as ubiquitous powers, as well as the practical reasons such as light weight, flexibility and roll-to-roll process. However, conventional high temperature fabrication technology for glass based DSSCs, cannot be applied to flexible devices because polymer substrates cannot withstand the heat more than $150^{\circ}C$. Therefore, low temperature fabrication process, without using a polymer binder or thermal sintering, was required to fabricate necked $TiO_2$. In this presentation, we proposed polymer-inorganic composite photoelectrode, which can be fabricated at low temperature. The concept of composite electrode takes an advantage of utilizing elastic properties of polymers, such as good impact strength. As an elastic material, poly(methyl methacrylate) (PMMA) is selected because of its optical transparency and good adhesive properties. In this work, a polymer-inorganic composite electrode was constructed on FTO/glass substrate under low temperature sintering condition, from the mixture of PMMA and $TiO_2$ colloidal solution. The effect of PMMA composition on the photovoltaic property was investigated. Then, the enhanced mechanical stability of this composite electrode on ITO/PEN substrate was also demonstrated from bending test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.435-436
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• 2008

Dye-sensitized Solar Cells(DSSCs) which convert incident sun light into electricity were expected to overcome global warming and depletion of fossil fuels. And it is one of study that is lately getting into the spotlight because manufacturing method is more simple and inexpensive than existing silicon solar cells. In this respect, DSSCs are in the limelight as the next generation solar cells. DSSCs are generally composed of a dye-modified $TiO_2$ photoelectrode, a Pt counter electrode, and an electrolytes containing a redox couple$(I^-/I_3^-)$. Among these elements, pt electrode were prepared by applying electric potential to FTO substrate in the $H_2PtCl_6$ solution. In this study, we report the solar cell efficiency depending on $PtCl_4$ concentration change. $PtCl_4$ concentration was 1mM, 5mM, 10mM, and 20mM, and adhered on FTO glass substrate by sintering process. When applied each $PtCl_4$ counter electrode on DSSC, the best efficiency was found at 10mM of $PtCl_4$ concentration. The catalyst promotes the movement of electron from the counter electrode to the electrolyte the higher the molarity, the better the efficiency. However, in case of 20mM, it is estimated that over-deposited $PtCl_4$ tends to restrict the movement of electron due to its bundle formation.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.250.1-250.1
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• 2015

광학적 특성 중 광 포집 (Light trapping)을 향상시키기 위해 표면의 거칠기 및 형태를 변화시킬 수 있는 방법으로 유리 텍스쳐 방법을 적용시키는 연구가 최근에 많이 진행되고 있다. 본 연구에서 광 포집 및 전류밀도 향상을 위해 페로브스카이트 태양전지의 상부전극에 적용 하였다. 본 연구에서 FTO 기판 후면의 유리 부분을 희석된 HF 용액을 사용하여 습식화학공정을 진행 하였다. 이때 텍스쳐 시간을 조절하여 실험을 진행하였으며, 박막의 광 산란 및 포집 특성을 조절 하였습니다. 텍스쳐된 유리기판을 페로브스카이트 태양전지에 적용 하였을 때, 광 산란 및 포집 효과로 인하여 전류밀도와 효율이 증가됨을 확인하였다. 이러한 유리 텍스처 처리는 다양한 태양전지 구조에 이용될 수 있다.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.360-363
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• 2009

In order to improve the overall power conversion efficiency, it is very important to reduce the interface resistance of dye-sensitized solar cells (DSSCs). In this approach, tiny $TiO_2$ nanoparticles with the primary size of 10~20nm were synthesized and deposited between FTO glass and preformed $TiO_2$ layer by $TiOCl_2$ treatment, and also Pt catalysts were deposited on the counter electrode by both ion-sputter and thermal deposition to reduce the electrolyte-counter electrode interface resistance. The influence of these processes on the performace of DSSCs were discussed in terms of fill factor, short circuit current, and conversion efficiency.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.227-228
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• 2012

In interfaces between carbon black or Pt and FTO glass in dye-sensitized solar cell counter electrodes, a marginal resistant channel for electrons, we tried to improve the connection by modifying the sintering process. A stepwise sintering process for carbon black and Pt counter electrodes was applied and its effect on power conversion efficiency was studied. Power conversion efficiencies of built-in DSSC made by a one-step sintering process with carbon black and Pt counter electrodes were about 5.01% and 5.02%, respectively. Cells made with the stepwise sintering process were 5.96% and 6.21%, respectively, indicating an 20% improvement. Fill factor (FF) increased, and it was them main reason for the power conversion efficiency improvement. Step wise sintering increased the adhesion of the interface and reduced the film thickness and surface roughness. As a result, the resistivity of the counter electrode and EIS impedance of DSSCs decreased.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.231-231
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• 2010

GaN는 상온에서 3.4 eV의 넓은 밴드갭을 갖는 직접천이형 반도체로 우수한 전기적/광학적 특성 및 화학적 안정성으로 발광 다이오드 및 레이저 다이오드 등과 같은 광전소자 응용을 위한 소재로 많은 연구가 진행되어왔다. 특히, GaN 나노구조의 경우 낮은 결함밀도, 빠른 구동 및 고집적 특성 등을 가지기 때문에 효과적으로 소자의 광학적/전기적 특성을 향상시킬 수 있어 나노구조 성장을 위한 연구가 활발히 진행되고 있다. 최근에는 Metal organic vapor deposition (MOCVD), hot filament chemical vapor deposition (CVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE) 등 다양한 방법을 통해 성장된 GaN 나노구조가 보고되고 있다. 하지만 고가 장비 사용 및 높은 공정 온도, 복잡한 공정과정이 요구되며 크기조절, 조성비, 도핑 등과 같은 해결되어야 할 문제가 여전히 남아있다. 본 연구에서는 나노구조를 형성하기 위하여 보다 간단한 방법인 전기화학증착법을 이용하여 GaN 나노구조를 ITO 및 FTO가 증착된 전도성 glass 기판 위에 성장하였고 성장 메커니즘 및 그 특성을 분석하였다. GaN 나노구조는 gallium nitrate와 ammonium nitrate가 혼합된 전해질 용액에 Pt mesh 구조 및 전도성 glass 기판을 1cm의 거리를 유지하도록 담가두고 일정한 전압을 인가하여 성장시켰다. Pt mesh 구조 및 전도성 glass 기판은 각각 상대전극 (counter electrode) 및 작업전극 (working electrode)으로 사용되었고 전해질 용액의 농도, 인가전압, 성장시간 등의 다양한 조건을 통하여 GaN 나노구조를 성장하고 분석하였다. 성장된 GaN 나노구조 및 형태는 field emission scanning electron microscopy (FE-SEM)를 이용하여 분석하였고, energy dispersive X-ray (EDX) 분석을 통하여 정량 및 정성적 분석을 수행하였다. 그리고 성장된 GaN 나노구조의 결정성을 조사하기 위해 X-ray diffraction (XRD)을 측정 및 분석하였다. 또한, photoluminescence (PL) 분석으로부터 GaN 나노구조의 광학적 특성을 분석하였다.

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.497-501
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• 2011

The CdS thin film used as a window layer in the CdTe thin film solar cell transports photo-generated electrons to the front contact and forms a p-n junction with the CdTe layer. This is why the electrical, optical, and surface properties of the CdS thin film influence the efficiency of the CdTe thin film solar cell. When CdTe thin film solar cells are fabricated, a heat treatment is done to improve the qualities of the CdS thin films. Of the many types of heat treatments, the $CdCl_2$ heat treatment is most widely used because the grain size in CdS thin films increases and interdiffusion between the CdS and the CdTe layer is prevented by the heat treatment. To investigate the changes in the electrical, optical, and surface properties and the crystallinity of the CdS thin films due to heat treatment, CdS thin films were deposited on FTO/glass substrates by the rf magnetron sputtering technique, and then a $CdCl_2$ heat treatment was carried out. After the $CdCl_2$ heat treatment, the clustershaped grains in the CdS thin film increased in size and their boundaries became faint. XRD results show that the crystallinity improved and the crystalline size increased from 15 to 42 nm. The resistivity of the CdS single layer decreased from 3.87 to 0.26 ${\Omega}cm$, and the transmittance in the visible region increased from 64% to 74%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.330-330
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• 2009

For the high-performance Quantum dots-Light Emitting Diodes in the near-infrared and visible spectrum, adequate electro- and hole-transporting layers are required. The operation lifetimes of typical materials used in OLEDs are very limited and degraded especially by the oxygen and humid atmosphere. In this work, NiO was selected as a possible hole-transporting layer replacing the TPD film used in QD-LEDs. About 40-nm-thick NiO films have been deposited by the rf-sputtering method on various technical substrates such as FTO/glass, ITO/glass, and ITO/PEN. For the balance of charge carriers and quenching consideration, the resistivity of the deposited NiO films was investigated controlling the oxygen in the sputtering gas. NiO films were fabricated at room temperature and about 6mTorr using pure Ar, 2.5%-, 5%-, and 10%-mixed $O_2$ in Ar respectively. We also investigated the rf-power dependence on NiO films in the range of 80 ~ 200 Watts. The resistivity of the samples was varied from highly conductive to resistive state. Also discussed are the surface roughness of NiO films to provide the smooth surface for the deposition of QDs.

• Bulletin of the Korean Chemical Society
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• v.32 no.10
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• pp.3629-3633
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• 2011

The effect of a dense $TiO_2$ blocking layer prepared using the sol-gel method on the performance of dye-sensitized solar cells was studied. The blocking layer formed directly on the working electrode, separated it from the electrolyte, and prevented the back transfer of electrons from the electrode to the electrolyte. The dyesensitized solar cells were prepared with a working electrode of fluorine-doped tin oxide glass coated with a blocking layer of dense $TiO_2$, a dye-attached mesoporous $TiO_2$ film, and a nano-gel electrolyte, and a counter electrode of Pt-deposited FTO glass. The gel processing conditions and heat treatment temperature for blocking layer formation affected the morphology and performance of the cells, and their optimal values were determined. The introduction of the blocking layer increased the conversion efficiency of the cell by 7.37% for the cell without a blocking layer to 8.55% for the cell with a dense $TiO_2$ blocking layer, under standard illumination conditions. The short-circuit current density ($J_{sc}$) and open-circuit voltage ($V_{oc}$) also were increased by the addition of a dense $TiO_2$ blocking layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.511-511
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• 2007

Low-emissivity (low-e) coatings with visible transparency have attracted increased interest m reducing heat radiation loss through window panes from ecological and sustainable aspects. $TiO_2$-silver transparent thin films for low-e have good properties for UV and IR blocking as well as photocatalyst compared to that with commercial UV blocking films such as fluorine doped oxide (FTO), antimony doped tin oxide (ATO), etc. In this study, transparent $TiO_2$-silver thin films were prepared by successive ink-jet printing of commercial nano silver and $TiO_2$ sol. The $TiO_2$ sol, as ink for ink-jet printing, were synthesized by hydrothermal process in the autoclave externally pressurized with $N_2$ gas of 200 bar at $120^{\circ}C$ for 10 hrs. The synthesized $TiO_2$ sols were all formed with brookite phase and their particle size was several to 30 nm. At first nano sized silver sol was coated on glass substrate, after that $TiO_2$ sol was coated by ink-jet printing. With increasing coating thickness of $TiO_2$-silver multilayer by repeated ink-jet coating, the absorbance of UV region (under 400nm) and IR region (over 700nm) also increase reasonably, compared to that with commercial UV blocking films.